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Low voltage dc to dc converter regulator with minimum external magnetic field disturbance - choke cell assembly and magnetic disturbance mapping of choke cell and coaxial converter
Low-voltage, high current dc-ac converter from magnetoresistor, superconductor, Hall effect, or thin-film devices
Engineering developments for low voltage dc to dc converter-regulator with minimum external magnetic field disturbance
Increased penetration of Distributed Energy Resources and microgrids have fundamentally changed the operation al characteristics of Low Voltage (LV) network systems. Current LV network protection philosophy and practice are due for a significant re vamp to keep up with changing operating conditions. This workshop invites four of the major LV network users in the US to discuss the challenges they face today and the new technologies they have been experimenting with in light of this workshop discussion, use cases for further hardware-in-the-loop testing efforts are proposed to evaluate new LV network protection solutions.
This paper proposes a novel design for grid-tied 3-ph Photovoltaic (PV) inverter to improve its low-voltage ride through (LVRT) response while significantly increasing its voltampere reactive (VAR) support during voltage sags. The literature available on LVRT for PV inverters can be grouped in solutions that dissipate the excess energy and those that temporary stores this energy. This paper proposes a third solution; oversizing inverter hardware components to safely transferring all the energy excess back to while maintaining the semiconductor under the maximum temperature limits. The advantages of the proposed approach are: 1) Improved LVRT capabilities and stable dc-link voltage control at MPP during sags. 2) Increased VAR support during voltage sags. 3) Increased use of renewable energy as all active power is injected back to the grid during voltage sags. Finally, the proposed solution is more cost effective compared with solutions that incorporate energy storage because only a few inverter components are required to be oversized. This paper also presents a detailed power loss analysis, which determined that that oversizing the power semiconductors has minimal impact in the inverter losses while significatively reducing the diode and IGBT conduction losses during both normal operation and grid fault conditions.
In this work, we describe a method to control the insulator–metal transition at the LaAlO 3 /SrTiO 3 interface using ultra-low-voltage electron beam lithography. Compared to previous reports that utilize conductive atomic force microscope (c-AFM) lithography, this approach can provide comparable resolution (~10 nm) at write speeds (10 mm/s) that are up to 10 000× faster than c-AFM. The writing technique is nondestructive, and the conductive state is reversible via prolonged exposure to air. Transport properties of representative devices are measured at milli-Kelvin temperatures, where superconducting behavior is observed. We also demonstrate the ability to create conducting devices on graphene/LaAlO 3 /SrTiO 3 heterostructures. The underlying mechanism is believed to be closely related to the same mechanism regulating c-AFM-based methods.
Strain-mediated magnetoelectric (ME) coupling in ferroelectric (FE)/ferromagnetic (FM) heterostructures offers a unique opportunity for both fundamental scientific research and low-power multifunctional devices. Relaxor-FEs, such as (1-x)Pb(Mg 1/3 Nb 2/3 )O 3 -(x)PbTiO 3 (PMN-xPT), are ideal FE layer candidates because of their giant piezoelectricity. However, thin films of PMN-PT suffer from substrate clamping, which substantially reduces piezoelectric in-plane strains. Here, we demonstrate low-voltage ME coupling in an all-thin-film heterostructure that uses the anisotropic strains induced by the (011) orientation of PMN-PT. We completely remove PMN-PT films from their substrate and couple with FM Ni overlayers to create membrane PMN-PT/Ni heterostructures showing 90° Ni magnetization rotation with 3 V PMN-PT bias, much less than the bulk PMN-PT ~100-V requirement. Scanning transmission electron microscopy and phase-field simulations clarify the membrane response. These results provide a crucial step toward understanding the microstructural behavior of PMN-PT thin films for use in piezo-driven ME heterostructures.
Taking advantage of technological developments in wafer-scale processing over the past two decades, such as deep etching, 3-D chip stacking, and double-sided lithography, we have designed and fabricated the key elements of an ultracompact 1.5cm (exp 3)plasma spectrometer that requires only low-voltage power supplies, has no microchannel plates, and has a high aperture area to instrument volume ratio. The initial design of the instrument targets the measurement of charged particles in the 3-20keV range with a highly directional field of view and a 100 duty cycle; i.e., the entire energy range Is continuously measured. In addition to reducing mass, size, and voltage requirements, the new design will affect the manufacturing process of plasma spectrometers, enabling large quantities of identical instruments to be manufactured at low individual unit cost. Such a plasma spectrometer is ideal for heliophysics plasma investigations, particularly for small satellite and multispacecraft missions. Two key elements of the instrument have been fabricated: the collimator and the energy analyzer. An initial collimator transparency of 20 with 3deg x 3deg angular resolution was achieved. The targeted 40 collimator transparency appears readily achievable. The targeted energy analyzer scaling factor of 1875 was achieved; i.e.20 keV electrons were selected for only a 10.7V bias voltage in the energy analyzer.
Spectrographic method determines individual stainless steel components in molten bismuth-42 w/o tin eutectic to determine the solubility of Type 304 stainless steels. It utilizes the high sensitivity and precision of the spark-ignited, low-voltage ac-arc excitation of samples rendered homogeneous by dissolution.
Tunnel junction devices grown monolithically by metal organic chemical vapor deposition were optimized for minimization of the tunnel junction voltage drop. Here, two device structures were studied: an all-GaN homojunction tunnel junction and a graded InGaN heterojunction-based tunnel junction. This work reports a record-low voltage drop in the graded-InGaN heterojunction based tunnel junction device structure achieving a de-embedded tunnel junction voltage drop of 0.17 V at 100 A/cm 2 . The experimental data were compared with a theoretical model developed through technology computer-aided design (TCAD) simulations that offer a physics-based approach to understanding the key components of the design space, which lead to a more efficient tunnel junction.
Accurate evaluations of diffusion lengths for heavily to moderately doped III-V semiconductors and/or radiation damaged solar cells have been made possible by using experimental and numerical techniques. The techniques employed were electron beam induced current and low voltage electron microscopy.
Perovskite solar cells (PSCs) rapidly degrade under reverse bias, a condition that may occur during partial shading. Here, in this study, we use electrical measurements, electron microscopy, and optical and thermal imaging to investigate abrupt breakdown and hotspotting under low reverse potentials (<|-2| V). We show that microscopic pinholes in the perovskite layer cause rapid, destructive breakdown under reverse bias despite minimally reducing power conversion efficiencies. Measurements on miniature (200-micrometer diameter) PSCs and perovskite-free transport-layer diodes indicate that abrupt, low-voltage breakdown occurs in nanoscale to micrometer-scale defects and that metal migration and filamentation are unlikely causes. Reverse-bias stability substantially improves when pinholes in the perovskite and transport layers are eliminated. Atomic layer deposition of tin oxide prevents abrupt breakdown by ensuring physical separation between electrodes-not by blocking metal ion migration. Perovskite researchers should adopt cleaner, more uniform deposition techniques to enable robust PSCs for further research and commercial applications.
Being key components of the building envelope, glazing products with tunable optical properties are in great demand because of their potential for boosting energy efficiency and privacy features while enabling the main function of allowing natural light indoors. However, windows and skylights with electric switching of haze and transparency are rare and often require high voltages or electric currents, as well as not fully meet the stringent technical requirements for glazing applications. Here, by introducing a predesigned gel material we describe an approach dubbed “Haze-Switch” that involves low-voltage tuning of the haze coefficient in a broad range of 2–90% while maintaining high visible-range optical transmittance. The approach is based on a nanocellulose fiber gel network infiltrated by a nematic liquid crystal, which can be switched between polydomain and monodomain spatial patterns of optical axis via a dielectric coupling between the nematic domains and the applied external electric field. By utilizing a nanocellulose network of nanofibers ~10 nm in diameter we achieve <10 V dielectric switching and <2% haze in the clear state, as needed for applications in window products. Finally, we characterize physical properties relevant to window and smart glass technologies, like the color rendering index, haze coefficient, and switching times, demonstrating that our material and envisaged products can meet the stringent requirements of the glass industry, including applications such as privacy windows, skylights, sunroofs, and daylighting.
Abstract Ferroelectrics are being increasingly called upon for electronic devices in extreme environments. Device performance and energy efficiency is highly correlated to clock frequency, operational voltage, and resistive loss. To increase performance it is common to engineer ferroelectric domain structure with highly‐correlated electrical and elastic coupling that elicit fast and efficient collective switching. Designing domain structures with advantageous properties is difficult because the mechanisms involved in collective switching are poorly understood and difficult to investigate. Collective switching is a hierarchical process where the nano‐ and mesoscale responses control the macroscopic properties. Using chemical solution synthesis, epitaxially nearly‐relaxed (100) BaTiO 3 films are synthesized. Thermal strain induces a strongly‐correlated domain structure with alternating domains of polarization along the [010] and [001] in‐plane axes and 90° domain walls along the [011] or [01] directions. Simultaneous capacitance–voltage measurements and band‐excitation piezoresponse force microscopy revealed strong collective switching behavior. Using a deep convolutional autoencoder, hierarchical switching is automatically tracked and the switching pathway is identified. The collective switching velocities are calculated to be ≈500 cm s −1 at 5 V (7 kV cm −1 ), orders‐of‐magnitude faster than expected. These combinations of properties are promising for high‐speed tunable dielectrics and low‐voltage ferroelectric memories and logic.
Titanium-based anode materials have achieved much progress with the wide studies in lithium-ion batteries. However, these known materials usually possess high discharge voltage platforms and limited energy densities. In this work, a titanium-based oxide of Na 2 TiGeO 5 with layered structure, two-dimensional lamellar frame and exposed highly active (001) facet, exhibiting good electrochemical performance in terms of high capacity (410 mAh g –1 with a current density of 50 mA g –1 ), excellent rate capability and cycling stability with no obvious capacity attenuation after 4000 cycles, is reported. The appropriate discharge voltage plateau at around 0.2 V endows the Na 2 TiGeO 5 anode material high security compared with graphite and high energy density compared with spinel Li 4 Ti 5 O 12 . Combining the electrochemical tests and the density functional theory calculations, the Li + storage mechanism of Na 2 TiGeO 5 is elucidated and the conversion reaction process is revealed. More importantly, this study provides a way to develop low-voltage and high-capacity titanium-based anode materials for efficient energy storage.
This study presents an interface method (IM) to interconnect real-time simulators (RTSs) without amplifiers for different intelligent electronic devices (IEDs), such as protective relays, smart meters, and other devices. It is a significant topic for the power systems protection community because there are many protection devices with different requirements. These protection devices have pinouts that measure bus voltages/currents and breaker pole states and generate trip/close pulse signals. Most of the emulation test beds with RTSs and HIL need amplifiers to connect IEDs from different product manufacturers because the low-voltage interface levels are not available in some instruction manuals. Additionally, commercial amplifiers have cutoff frequency limitations and have an excessive cost when several IEDs are wired onto test beds. Then, the validation of protection and control systems with RTSs and IEDs in the loop from different vendors without amplifiers results in an unfeasible alternative. In this paper, the IM was based on using an interface box, power source, and RTS to identify IED inputs/outputs. Here, the sequence to recognize IED pinouts and calculate the current/voltage scaling factors is described. The IM was validated satisfactorily with RTS and a protection device (with unknown pinouts) in the loop.
NASA's Langley Research Center and Johnson Space Center are developing a solid freeform fabrication system utilizing an electron beam energy source and wire feedstock. This system will serve as a testbed for exploring the influence of gravitational acceleration on the deposition process and will be a simplified prototype for future systems that may be deployed during long-duration space missions for assembly, fabrication, and production of structural and mechanical replacement components. Critical attributes for this system are compactness, minimal mass, efficiency in use of feedstock material, energy use efficiency, and safety. The use of a low-voltage (less than 15kV) electron beam energy source will reduce radiation so that massive shielding is not required to protect adjacent personnel. Feedstock efficiency will be optimized by use of wire, and energy use efficiency will be achieved by use of the electron beam energy source. This system will be evaluated in a microgravity environment using the NASA KC-135A aircraft.
Given the high density (approx. 10(exp 4)/sq cm) of elementary screw dislocations (Burgers vector = lc with no hollow core) in commercial SiC wafers and epilayers, all appreciable current (greater than 1 A) SiC power devices will likely contain elementary screw dislocations for the foreseeable future. It is therefore important to ascertain the electrical impact of these defects, particularly in high-field vertical power device topologies where SiC is expected to enable large performance improvements in solid-state high-power systems. This paper compares the DC-measured reverse-breakdown characteristics of low-voltage (less than 250 V) small-area (less than 5 x 10(exp -4) sq cm) 4H-SiC p(+)n diodes with and without elementary screw dislocations. Compared to screw dislocation-free devices, diodes containing elementary screw dislocations exhibited higher pre-breakdown reverse leakage currents, softer reverse breakdown I-V knees, and highly localized microplasmic breakdown current filaments. The observed localized 4H-SiC breakdown parallels microplasmic breakdowns observed in silicon and other semiconductors, in which space-charge effects limit current conduction through the local microplasma as reverse bias is increased.