What Determines the fcc-bcc Structural Transformation in Shock Compressed Noble Metals?
Abstract not provided
Sharma, Surinder M.↗
SEARCH · Engineering Papers
Results for “lattice defect”
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.
Interface pinning causes the hysteresis of the hydride transformation in binary metal hydrides
Hydriding and dehydriding transitions in bulk and nanocrystalline binary metal hydrides were studied using the Pd-H model system by measuring pressure-composition isotherms with in situ x-ray diffractometry. Nanocrystalline Pd showed a smaller pressure hysteresis, solvus hysteresis, and hysteresis in lattice parameter, compared to bulk Pd. The time-dependence of pressure equilibration was measured after dosing with aliquots of hydrogen, giving equilibration times that were much faster in the single-phase regions than in the two-phase plateaus. In the broad two-phase plateaus, the pressure relaxations were exponential functions of time. An explanation of hysteresis is developed that is based on a dissipative potential barrier that impedes the motion of the interface due to interactions between lattice defects and the two-phase interface. The exponential pressure relaxations and hysteresis are consistent for this mechanism. For a simple model of the pinning potential, the potential barrier maximum is an order of magnitude less than typical grain boundary energies. These pinning effects are substantially different in the nanocrystalline Pd, suggesting differences in the hydriding mechanism.
36 MATERIALS SCIENCE↗
Charge-trap analysis in a SENSEI skipper-CCD: Understanding low-energy backgrounds in rare-event searches
Skipper charge-coupled devices (CCDs) are ultralow-threshold detectors capable of detecting energy deposits in silicon at the electronvolt scale. Skipper CCDs are increasingly used in rare-event searches, including experiments such as SENSEI, DAMIC-M, Oscura, and CONNIE, where one of the major challenges is mitigating low-energy backgrounds. In this work, we present results on trap characterization in a silicon skipper-CCD produced in the same fabrication run as the SENSEI experiment at SNOLAB. Lattice defects contribute to backgrounds in rare-event searches through single-electron charge trapping. To investigate this, we use the charge-pumping technique at different temperatures to identify dipoles produced by traps in the CCD channel. We fully characterize a fraction of these traps and use this information to extrapolate their contribution to the single-electron background in SENSEI. We find that this subpopulation of traps does not contribute significantly, but more work is needed to assess the impact of the traps that cannot be characterized.
Brusco, Agustin↗
Giant Polarization in Nanodielectrics
The relative permittivity of a material is a scaling factor for capacitors and the devices based upon them; the larger the relative permittivity, the greater the degree of miniaturization, or potential for energy storage. Materials with a relative permittivity than that of silicon nitride (approximately 7) are referred to as high-dielectric constant materials. Values of about 100 are typical in titanium dioxide rutile. Values of about 10,000 are observed in barium titanate in the region of the ferroelectric transition, which while impressive, is not very useful due to the strong temperature dependence. The observation of a relative permittivity of over 100,000 in the calcium copper titanate material sparked considerable interest because it showed little temperature dependence between 100 and 600 K over most of the radio-frequency range. Further investigation revealed that this material appears to be naturally nanotextured and that the colossal permittivity was likely due to the surface and/or internal barrier layer capacitance effect, although the issue is not settled. Unfortunately, the dielectric losses in this class materials are relatively high. A new strategy to achieve high dielectric permittivity with low loss involves using localized lattice defect states through ambipolar co-doping; these intrinsic defect complexes give rise to strong dipoles that are responsible for a relative permittivity of 10,000 with exceptionally low dielectric losses over most of the radio frequency range and excellent thermal stability.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Characterization of Nb films with varying RRR values at low temperatures [Poster]
Superconducting properties of Nb in microwave fields vary significantly with lattice defects and impurity content, where sub-at.% impurity level can reduce or increase microwave surface resistance by an order of magnitude. In this study, we studied the microwave properties of Nb films, deposited by different PVD techniques, at low microwave fields correlating microwave properties at dilution fridge temperatures with material properties characterized with surface science techniques. We are studying the microwave properties of Nb films, deposited by different PVD techniques, at low microwave fields and low temperatures. The first Nb film, deposited onto an elliptical niobium cavity by HiPIMS technique at CERN, was tested at low temperatures. The first results show that film performance was similar to that of the bulk niobium cavities.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Achieving high-ZT in Te/Se-based thermoelectric materials via volume-constrained shear-induced plastic deformation
This study investigated the correlation between severe plastic deformation and microstructural evolution, along with the corresponding response in the thermoelectric performance. Specifically, severe plastic deformation introduced into intrinsically brittle thermoelectric materials like Bi 2 Te 3 - x Se x leads to microstructural changes ranging from nano- to micro- scales, including phase transformation, phase segregation, and stacking faults. The resultant residual strain and lattice defects in the Bi 2 Te 3-x Se x materials led to engineering of electronic bands, which increases the effective mass of electrons while controlling their concentration, thereby enhancing the power factor.
36 MATERIALS SCIENCE↗
Medium-Range Order Resists Deformation in Metallic Liquids and Glasses
In crystals, lattice defects, such as dislocations, control mechanical deformation. Similarly, it is widely believed that even in glasses and liquids some kinds of defects, strongly disordered regions, play a major role in deformation. To identify defects researchers focused on the nature of the short-range order (SRO) in the nearest neighbor cage of atoms. However, recent results by experiment, simulation and theory raise serious questions about this assumption. They suggest that the atomic medium-range order (MRO) provides resistance against flow at the atomic level. Because the MRO is a bulk property, it implies that defects play only a limited role. This new insight is supported by the density wave theory which shows that the MRO is driven by a top-down global force, rather than being a consequence of the SRO in the bottom-up manner, and the MRO provides stiffness to resist deformation. We briefly summarize the density wave theory, show that the MRO is related to ductility of metallic glasses, and discuss the implications on the role of the MRO in the atomic-level mechanism of deformation.
36 MATERIALS SCIENCE↗
Giant polarization in nanodielectrics
The relative permittivity of a material is a scaling factor for capacitors and the devices based upon them; the larger the relative permittivity, the greater the degree of miniaturization, or potential for energy storage. Materials with a relative permittivity than that of silicon nitride (approximately 7) are referred to as high-dielectric constant materials. Values of about 100 are typical in titanium dioxide rutile. Values of about 10,000 are observed in barium titanate in the region of the ferroelectric transition, which while impressive, is not very useful due to the strong temperature dependence. The observation of a relative permittivity of over 100,000 in the calcium copper titanate material sparked considerable interest because it showed little temperature dependence between 100 and 600 K over most of the radio-frequency range. Further investigation revealed that this material appears to be naturally nanotextured and that the colossal permittivity was likely due to the surface and/or internal barrier layer capacitance effect, although the issue is not settled. Unfortunately, the dielectric losses in this class materials are relatively high. A new strategy to achieve high dielectric permittivity with low loss involves using localized lattice defect states through ambipolar co-doping; these intrinsic defect complexes give rise to strong dipoles that are responsible for a relative permittivity of 10,000 with exceptionally low dielectric losses over most of the radio frequency range and excellent thermal stability.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Progress in High-Dielectric Constant Materials
The relative permittivity of a material is a scaling factor for capacitors and the devices based upon them; the larger the relative permittivity, the greater the degree of miniaturization, or potential for energy storage. Materials with a relative permittivity than that of silicon nitride (approximately 7) are referred to as high-dielectric constant materials. Values of about 100 are typical in titanium dioxide rutile. Values of about 10,000 are observed in barium titanate in the region of the ferroelectric transition, which while impressive, is not very useful due to the strong temperature dependence. The observation of a relative permittivity of over 100,000 in the calcium copper titanate material sparked considerable interest because it showed little temperature dependence between 100 and 600 K over most of the radio-frequency range. Further investigation revealed that this material appears to be naturally nanotextured and that the colossal permittivity was likely due to the surface and/or internal barrier layer capacitance effect, although the issue is not settled. Unfortunately, the dielectric losses in this class materials are relatively high. A new strategy to achieve high dielectric permittivity with low loss involves using localized lattice defect states through ambipolar co-doping; these intrinsic defect complexes give rise to strong dipoles that are responsible for a relative permittivity of 10,000 with exceptionally low dielectric losses over most of the radio frequency range and excellent thermal stability.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Charge Trap Analysis in a SENSEI Skipper-CCD: Understanding Low-Energy Backgrounds in Rare-Event Searches
Skipper Charge-Coupled Devices (Skipper-CCDs) are ultra-low-threshold detectors capable of detecting energy deposits in silicon at the eV scale. Increasingly used in rare-event searches, one of the major challenges in these experiments is mitigating low-energy backgrounds. In this work, we present results on trap characterization in a silicon Skipper-CCD produced in the same fabrication run as the SENSEI experiment at SNOLAB. Lattice defects contribute to backgrounds in rare-event searches through single-electron charge trapping. To investigate this, we employ the charge-pumping technique at different temperatures to identify dipoles produced by traps in the CCD channel. We fully characterize a fraction of these traps and use this information to extrapolate their contribution to the single-electron background in SENSEI. We find that this subpopulation of traps does not contribute significantly but more work is needed to assess the impact of the traps that can not be characterized.
Brusco, Agustin [Buenos Aires U.]↗
Dynamic Scaling Analysis of Accelerated Irradiation Testing on Additive Manufacturing Materials by Positron Annihilation
The timely applications of Additive Manufacturing (AM) materials in nuclear environments require accelerated irradiation tests, mainly ion irradiation to enable rapid prototyping. Low dose ion irradiation would cause sub-nanostructure changes by generation of lattice defects, vacancies, vacancy clusters and voids and void swelling caused by cellular dislocations. Positron Annihilation Lifetime (PAL), a novel technology, sensitive towards sub-nanostructure morphology with high accuracy (about 10-7 vacancy per atom), supported by Transition Electron Microscope (TEM) would be applied to identify the type and total size of the defects. The subsequent PAL measurements and TEM surface studies would be followed by PAL analysis that includes sophisticated trapping model. The PAS results would become an input to dynamic scaling analysis (that predicts radiation effects from low dose studies for high dose effects), which incorporate mean-field theory model. The final effect is an in-depth understanding of the microstructure evolution of AM materials under ion irradiation which can be extrapolated to the studies of neutron irradiation, since ion-irradiation takes less time and do not cause the irradiation hazard. The working hypothesis is that PAL technology, that have excellent sensitivity to low-defect concentration would help to identify ion-induced material damage on the atomic and nano-scale level, which then could be extrapolated to understand the neutron damage better.
accelerated irradiation testing↗
Impact of metal diffusion, lattice distortions, native defects, and ambient on dielectric breakdown in Ni–Ga 2 O 3 Schottky diodes
Ga 2 O 3 unipolar devices are of high interest due to their ~8 MV/cm predicted breakdown fields, which have not yet been achieved due to premature device failure. Pre- and post-failure defect analysis of Ni–Ga 2 O 3 Schottky diodes in ultrahigh vacuum (UHV) and air were performed using depth-resolved cathodoluminescence, high angle annular dark field scanning transmission electron microscopy, and energy dispersive x-ray analysis to understand the physical mechanisms that precede premature breakdown. The breakdown voltage in UHV was dramatically reduced by nearly 40% compared with the breakdown in air. This reduction in the breakdown voltage correlated with post-breakdown differences in Ni distribution, indicating that the coordination and bonding of Ni contribute strongly to electrical behavior in Ni–Ga 2 O 3 Schottky diodes. Breakdown studies in UHV revealed that Ni diffuses away more from the metal–semiconductor interface than with air breakdown, where Ni localizes more near the interface, indicative of the preferential formation of a Ni oxide under O-poor conditions. These measurements also identified the formation of divacancy-interstitial complexes and their characteristic luminescence signature ~150 nm from the interface, the densities of which correlated with breakdown fields. These findings show that electric-field-induced degradation occurs via the rearrangement of native point defects, which act as an additional precursor to device failure. Macroscopically, they show the impact of both vacuum conditions and metal reactivity on Ga 2 O 3 device fabrication.
36 MATERIALS SCIENCE↗
Characterization of Partial Charge Collection Induced by Neutron Damage in High-Purity Germanium Detectors
This paper investigates the correlation of damage induced by neutron interactions and degradation in the spectra of HPGe detectors. As neutrons kinetically interact with germanium crystals, they create interstitial and vacancy defects within the lattice. These defects then interfere with the charge migration of electron-hole pairs and reduce resolution in the observed energy spectrum. The partial charge collection produces observable spectral changes by increasing the peak width and reducing resolution (full width half maximum). A detailed characterization using various check sources was performed before and after iterations of neutron exposure in order to observe the effects of the neutron damage. An additional set of measurements was performed along with characterizations to show the detector’s response at discrete locations on the HPGe crystal. This was done to observe how the spectrum changes when the gamma rays are isolated to regions of various thicknesses of germanium. In order to impart damage, the detector was placed inside a californium shuffler with the face of the detector against the guide tube for the 252 Cf source. For irradiation of the HPGe, the source was then positioned in front of the face of the detector using the stepper motor of the shuffler. The neutron exposure time intervals were recorded and increased based on the initial damage observed. An MCNP simulation was performed to estimate the amount of interactions that occurred in the germanium crystal to ensure enough damage had occurred. Studying the effects that neutron damage imparts on a bullet-type HPGe detector can help provide necessary data to estimate total neutron exposure limits, reduce the likelihood of decisions made on suspect data, and aid in diagnostics of a damaged detector.
36 MATERIALS SCIENCE↗
Lattice realizations of topological defects in the critical (1+1)-d three-state Potts model
Topological/perfectly-transmissive defects play a fundamental role in the analysis of the symmetries of two dimensional conformal field theories (CFTs). In the present work, spin chain regularizations for these defects are proposed and analyzed in the case of the three-state Potts CFT. In particular, lattice versions for all the primitive defects are presented, with the remaining defects obtained from the fusion of the primitive ones. The defects are obtained by introducing modified interactions around two given sites of an otherwise homogeneous spin chain with periodic boundary condition. The various primitive defects are topological on the lattice except for one, which is topological only in the scaling limit. The lattice models are analyzed using a combination of exact diagonalization and density matrix renormalization group techniques. Low-lying energy spectra for different defect Hamiltonians as well as entanglement entropy of blocks located symmetrically around the defects are computed. The latter provides a convenient way to compute the g-function which characterizes various defects. Finally, the eigenvalues of the line operators in the “crossed channel” and fusion of different defect lines are also analyzed. The results are all in agreement with expectations from conformal field theory.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Suppressed Lone Pair Electrons Explain Unconventional Rise of Lattice Thermal Conductivity in Defective Crystalline Solids
Manipulating thermal properties of materials can be interpreted as the control of how vibrations of atoms (known as phonons) scatter in a crystal lattice. Compared to a perfect crystal, crystalline solids with defects are expected to have shorter phonon mean free paths caused by point defect scattering, leading to lower lattice thermal conductivities than those without defects. While this is true in many cases, alloying can increase the phonon mean free path in the Cd-doped AgSnSbSe 3 system to increase the lattice thermal conductivity from 0.65 to 1.05 W m –1 K –1 by replacing 18% of the Sb sites with Cd. It is found that the presence of lone pair electrons leads to the off-centering of cations from the centrosymmetric position of a cubic lattice. X-ray pair distribution function analysis reveals that this structural distortion is relieved when the electronic configuration of the dopant element cannot produce lone pair electrons. Furthermore, a decrease in the Grüneisen parameter with doping is experimentally confirmed, establishing a relationship between the stereochemical activity of lone pair electrons and the lattice anharmonicity. The observed “harmonic” behavior with doping suggests that lone pair electrons must be preserved to effectively suppress phonon transport in these systems.
36 MATERIALS SCIENCE↗
Non-destructive simulation of node defects in additively manufactured lattice structures
Additive Manufacturing (AM), commonly referred to as 3D printing, offers the ability to not only fabricate geometrically complex lattice structures but parts in which lattice topologies in-fill volumes bounded by complex surface geometries. However, current AM processes produce defects on the strut and node elements which make up the lattice structure. This creates an inherent difference between the as-designed and as-fabricated geometries, which negatively affects predictions (via numerical simulation) of the lattice’s mechanical performance. Although experimental and numerical analysis of an AM lattice’s bulk structure, unit cell and struts have been performed, there exists almost no research data on the mechanical response of the individual as-manufactured lattice node elements. Here we propose a methodology that, for the first time, allows non-destructive quantification of the mechanical response of node elements within an as-manufactured lattice structure. A custom-developed tool is used to extract and classify each individual node geometry from micro-computed tomography scans of an AM fabricated lattice. Voxel-based finite element meshes are generated for numerical simulation and the mechanical response distribution is compared to that of the idealised computer-aided design model. The method demonstrates compatibility with Uncertainty Quantification methods that provide opportunities for efficient prediction of a population of nodal responses from sampled data. Overall, the non-destructive and automated nature of the node extraction and response evaluation is promising for its application in qualification and certification of additively manufactured lattice structures.
36 MATERIALS SCIENCE↗
Contrasting SnTe–NaSbTe 2 and SnTe–NaBiTe 2 Thermoelectric Alloys: High Performance Facilitated by Increased Cation Vacancies and Lattice Softening
Defect chemistry is critical to designing high performance thermoelectric materials. In SnTe, the naturally large density of cation vacancies results in excessive hole doping and frustrates the ability to control the thermoelectric properties. Yet, recent work also associates the vacancies with suppressed sound velocities and low lattice thermal conductivity, underscoring the need to understand the interplay between alloying, vacancies, and the transport properties of SnTe. Here, we report solid solutions of SnTe with NaSbTe 2 and NaBiTe 2 (NaSn m SbTe m +2 and NaSn m BiTe m +2 , respectively) and focus on the impact of the ternary alloys on the cation vacancies and thermoelectric properties. We find introduction of NaSbTe 2 , but not NaBiTe 2 , into SnTe nearly doubles the natural concentration of Sn vacancies. Furthermore, DFT calculations suggest that both NaSbTe 2 and NaBiTe 2 facilitate valence band convergence and simultaneously narrow the band gap. These effects improve the power factors but also make the alloys more prone to detrimental bipolar diffusion. Indeed, the performance of NaSn m BiTe m +2 is limited by strong bipolar transport and only exhibits modest maximum ZTs ≈ 0.85 at 900 K. In NaSn m SbTe m +2 however, the doubled vacancy concentration raises the charge carrier density and suppresses bipolar diffusion, resulting in superior power factors than those of the Bi-containing analogues. Lastly, NaSbTe 2 incorporation lowers the sound velocity of SnTe to give glasslike lattice thermal conductivities. Facilitated by the favorable impacts of band convergence, vacancy-augmented hole concentration, and lattice softening, NaSn m SbTe m +2 reaches high ZT ≈ 1.2 at 800–900 K and a competitive average ZT avg of 0.7 over 300–873 K. The difference in ZT between two chemically similar compounds underscores the importance of intrinsic defects in engineering high-performance thermoelectrics.
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
Synchrotron CT imaging of lattice structures with engineered defects
Understanding mechanical failure, crack propagation, and compressive behavior at the micrometer scale is essential for tailoring material properties for structural performance in cellular materials. Typically, modeling of traditional polymer foam materials is clouded by the lack of control in material morphology and its inherent stochastic structure. Additive manufacturing with sub-micrometer resolution provides a direct path for experimenters to specifically tailor structures needed by modelers to explicitly probe mechanical performance. Using laboratory-based 3D X-ray computed tomographic imaging (CT), the examination of deformation and damage provides a critical path to understand how these soft materials behave. Additionally, synchrotron CT yields realistic information at higher strain rates to directly validate the robustness of our finite element modeling. For this study, nanolithographic printing was employed to generate a series of engineered lattices with increasing levels of defects through the random removal of ligaments. These structures were mechanically tested and imaged with laboratory-based microCT. Additionally, synchrotron experiments were conducted in which the structures were imaged in 3D at 14 Hz during compression at a 0.4 s –1 strain rate. These 3D images show the changes in the structure as the ligaments bend, buckle and fracture in real time. This technique provides a robust framework for developing our methodologies and future exploration of engineered structures.
36 MATERIALS SCIENCE↗