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At least 73 records · Page 4

Solar wind double ions beams and the heliospheric current sheet

Double ion beams are often observed in the solar wind, but little work has been done in relating these beams to structures within the solar wind. Double ion beams are observed as beams of a given ion species and charge state occurring at two different energies. We use the three-dimensional ion plasma instrument on board the Ulysses spacecraft to look for evidence of such beams associated with the heliospheric current sheet. In a subset chosen independently of plasma parameters consisting of 8 of cover 47 crossings of the current sheet made during the inecliptic phase of the Ulysses mission we find that these double ion beams are always present on either side of the current sheet. The double beams are present in both the proton and helium species. The secondary beam typically has a higher helium abundance, which suggests that these beams are formed in the helium-rich corona rather than in interplanetary space. The double beams are not present in the interior of the current sheet. Neither collisions nor effects of plasma beta can account for the disappearance of the double beams inside the current sheet in all eight cases. We postulate that these beams are formed by reconnection occurring near the Sun in the boundary region between the open field lines of the coronal holes and the closed field line region of the heliospheric current sheet. Such a scenario would be consistent with previous X ray measurements which suggect that reconnection is occurring in this region.

Hammond, C. M.↗

A heavy ion beam probe system for investigation of a modified Penning discharge

An ion beam probe diagnostic system can measure time- and space-resolved profiles of plasma space potential and electron density. In combination with a computer iterative technique, the ion beam probe can determine both the space potential profile in plasmas containing strong electric fields and potentials comparable in magnitude to the energy of the probing ion beam. During ion beam probing of a modified Penning discharge, several groups of secondary ions were observed coming from the plasma with a fixed primary beam energy and momentum. The energies of these ions were within 10 percent of the values predicted by a computer-generated model of the potential profile in the plasma. The mechanical and electronic components of the system are described, with particular emphasis on those features required to probe plasma potentials comparable in magnitude to the ion beam energy.

Kambic, G. X.↗

Characterization of beam ion loss in high poloidal beta regime on EAST

A critical issue for achieving the integrated operation of steady-state long-pulse high-confinement (H-mode) plasmas on experimental advanced superconducting tokamak (EAST) is to improve beam ion population confinement during neutral beam injection (NBI). To study the characterization of beam ion loss and improve beam ion confinement, the steady-state long pulse scenario discharges were conducted on EAST (β p $\geqslant$ 2.0, β N $\geqslant$ 1.7, q 95 $\geqslant$ 6.7 and H 98y2 $\geqslant$ 1.1) with NBI heating. Based on neutron yield, the beam voltage and line-averaged electron density were adjusted from 50 kV to 60 kV and 4.4 × 10 19 m –3 to 5.0 × 10 19 m –3 , respectively. The results show that the dominant mechanisms of beam ion loss are shine-through loss, prompt loss, and stochastic ripple loss. The shine-through loss fraction is determined by initial velocity, flight time and entire beam path. The change in prompt loss fraction is caused by the change in the deposition of beam ions. The change in stochastic ripple loss fraction is caused by the change in the initial fraction of trapped-confined ions. Detailed physics shows that the prompt loss fraction during counter-Ip injections (~45%) is far larger than during co-Ip injections (~5%) due to the finite orbit width. The lost ions are mainly deposited on the lower divertor or below the midplane since the direction of magnetic drift is vertical down. The orbit types of prompt loss during counter-Ip injections are mainly trapped-lost and ctr-passing lost. To minimize the prompt loss fraction during counter-Ip injections, a reversed Ip configuration (rev-Ip) discharge #94758 was conducted. The result suggests that the beam ion wall load fraction during counter-Ip tangential injection (~3%) is far lower than that in normal Ip configuration (nor-Ip) discharge #94820. It is also found that the confinement of beam ion population in the counter-Ip injection #94758 was greatly improved when compared to #94820. Finally, this study can provide unique support for the improvement of beam ion population confinement and for the performance evaluation of the NBI system on EAST and future tokamaks.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Experimental observation of the ion-ion beam instability in a cylindrical geometry

The ion-ion beam instability is investigated in a cylindrical geometry. In the presence of a cylindrically symmetric ion beam a coherent ion-ion beam instability is observed for a well-defined range of beam velocity. This instability gives rise to cylindrical standing waves whose frequency depends upon beam velocity. The beam distribution function is measured to be a ring in velocity space. The dispersion relation appropriate for the cylindrical standing waves is solved numerically and is shown to be in good agreement with the experimentally observed instability.

Romesser, T.↗

Ion beam profiling system and related methods

An ion beam profiling system include a beam profiling element, an ion sensitive element electrically isolated from the beam profiling element, an ion source configured to emit an ion beam at the beam profiling element and the ion sensitive element, and a current measuring device coupled to the ion sensitive element. The beam profiling element includes a plate of material having two parallel major surfaces, a first slit aperture extending through the plate of material and having a first longitudinal length extending in a direction parallel to the two parallel major surfaces, and a second slit aperture extending through the plate of material and having a second longitudinal length extending in a direction parallel to the two parallel major surfaces, wherein the first longitudinal length of the first slit aperture is perpendicular to the second longitudinal length of the second slit aperture.

Taylor, Chase N.↗

High efficiency ion beam accelerator system

An ion accelerator system that successfully combines geometrical and electrostatic focusing principles is presented. This accelerator system uses thin, concave, multiple-hole, closely spaced graphite screen and focusing grids which are coupled to single slot accelerator and decelerator grids to provide high ion extraction efficiency and good focusing. Tests with the system showed a substantial improvement in ion beam current density and collimation as compared with a Pierce electrode configuration. Durability of the thin graphite screen and focusing grids has been proven, and tests are being performed to determine the minimum screen and focusing grid spacing and thickness required to extract the maximum reliable beam current density. Compared with present neutral beam injector accelerator systems, this one has more efficient ion extraction, easier grid alignment, easier fabrication, a less cumbersome design, and the capacity to be constructed in a modular fashion. Conceptual neutral beam injector designs using this modular approach have electrostatic beam deflection plates downstream of each module.

Aston, G.↗

Plasma Focused Ion Beam Milling of High-Aspect-Ratio Holes in Diamond

Plasma focused ion beam (PFIB) technology has a great potential for applications requiring rapid micro-machining of high-aspect-ratio features. Here, we use 30-keV Ar, Xe, and O 2 ion beams to study PFIB milling of high-aspect-ratio circular holes in polycrystalline diamond. Our results show that Xe and O 2 ion beams have the highest milling efficiency for low-aspect-ratio and high-aspect-ratio hole milling, respectively. Each ion beam species produces holes with its characteristic shape and wall surface morphology. In conclusion, based on these results, we demonstrate a “hybrid” hole milled in a two-step process with Xe and O 2 ion beams with the geometry and wall morphology attractive for the attachment of a fuel fill tube to the inertial confinement fusion capsule.

ICF targets↗

Homogeneous alignment of nematic liquid crystals by ion beam etched surfaces

A wide range of ion beam etch parameters capable of producing uniform homogeneous alignment of nematic liquid crystals on SiO2 films are discussed. The alignment surfaces were generated by obliquely incident (angles of 5 to 25 deg) argon ions with energies in the range of 0.5 to 2.0 KeV, ion current densities of 0.1 to 0.6 mA sq cm and etch times of 1 to 9 min. A smaller range of ion beam parameters (2.0 KeV, 0.2 mA sq cm, 5 to 10 deg and 1 to 5 min.) were also investigated with ZrO2 films and found suitable for homogeneous alignment. Extinction ratios were very high (1000), twist angles were small ( or = 3 deg) and tilt-bias angles very small ( or = 1 deg). Preliminary scanning electron microscopy results indicate a parallel oriented surface structure on the ion beam etched surfaces which may determine alignment.

Wintucky, E. G.↗

Nonpropulsive applications of ion beams

This paper describes the results of an investigation of the nonpropulsive applications of electric propulsion technology. Eight centimeter ion beam sources utilizing xenon and argon have been developed that operate over a wide range of beam energies and currents. Three types of processes have been studied - sputter deposition, ion beam machining, and ion beam surface texturing. The broad range of source operating conditions allows optimum sputter deposition of various materials. An ion beam source has also been used to ion mill laser reflection holograms using photoresist patterns on silicon. Ion beam texturing has been tried with many materials and has a multitude of potential applications.

Hudson, W. R.↗

Ion beam thruster shield

An ion thruster beam shield is provided that comprises a cylindrical housing that extends downstream from the ion thruster and a plurality of annular vanes which are spaced along the length of the housing, and extend inwardly from the interior wall of the housing. The shield intercepts and stops all charge exchange and beam ions, neutral propellant, and sputter products formed due to the interaction of beam and shield emanating from the ion thruster outside of a fixed conical angle from the thruster axis. Further, the shield prevents the sputter products formed during the operation of the engine from escaping the interior volume of the shield.

Power, J. L.↗

Ion-beam radiation-induced Eshelby transformations: The mean and variance in hydrostatic and shear residual stresses

Ion beam plays a pivotal role in ion implantations and the fabrication of nanostructures. However, there lacks a quantitative model to describe the residual stresses associated with the ion-beam radiation. Radiation-induced residual stress/transformation strain have been mostly recognized in the hydrostatic sub strain space. Here, in this study, we use molecular dynamics (MD) simulations to show that the response of a material to irradiation is generally anisotropic that depends on the ion-beam direction, and should be described using tensorial quantities. We demonstrate that accelerator-based ion beam irradiation, combined with the intrinsic lattice anisotropy and externally induced anisotropy (such as anisotropic mechanical loadings), causes radiation-actuated shear transformation strains in addition to hydrostatic expansion. We map out these complex correlations for several materials. Radiation-induced defects are shown to be responsible for residual shear stresses in the manner of Eshelby inclusion transformation. We propose such tensorial response model should be considered for accurate nanoscale fabrication using ion-beam irradiation.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Ion beam probing of electrostatic fields

The determination of a cylindrically symmetric, time-independent electrostatic potential V in a magnetic field B with the same symmetry by measurements of the deflection of a primary beam of ions is analyzed and substantiated by examples. Special attention is given to the requirements on canonical angular momentum and total energy set by an arbitrary, nonmonotone V, to scaling laws obtained by normalization, and to the analogy with ionospheric sounding. The inversion procedure with the Abel analysis of an equivalent problem with a one-dimensional fictitious potential is used in a numerical experiment with application to the NASA Lewis Modified Penning Discharge. The determination of V from a study of secondary beams of ions with increased charge produced by hot plasma electrons is also analyzed, both from a general point of view and with application to the NASA Lewis SUMMA experiment. Simple formulas and geometrical constructions are given for the minimum energy necessary to reach the axis, the whole plasma, and any point in the magnetic field. The common, simplifying assumption that V is a small perturbation is critically and constructively analyzed; an iteration scheme for successively correcting the orbits and points of ionization for the electrostatic potential is suggested.

Persson, H.↗

Plasma effects of active ion beam injections in the ionosphere at rocket altitudes

Data from ARCS rocket ion beam injection experiments are primarily discussed. There are three results from this series of active experiments that are of particular interest in space plasma physics. These are the transverse acceleration of ambient ions in the large beam volume, the scattering of beam ions near the release payload, and the possible acceleration of electrons very close to the plasma generator which produce intense high frequency waves. The ability of 100 ma ion beam injections into the upper E and F regions of the ionosphere to produce these phenomena appear to be related solely to the process by which the plasma release payload and the ion beam are neutralized. Since the electrons in the plasma release do not convect with the plasma ions, the neutralization of both the payload and beam must be accomplished by large field-aligned currents (milliamperes/square meter) which are very unstable to wave growth of various modes.

Arnoldy, R. L.↗

Single-beam ion source enhanced growth of transparent conductive thin films

A single-beam ion source was developed and used in combination with magnetron sputtering to modulate the film microstructure. The ion source emits a single beam of ions that interact with the deposited film and simultaneously enhances the magnetron discharge. The magnetron voltage can be adjusted over a wide range, from approximately 240 to 130 V, as the voltage of the ion source varies from 0 to 150 V, while the magnetron current increases accordingly. The low-voltage high-current magnetron discharge enables a 'soft sputtering mode', which is beneficial for thin-film growth. Indium tin oxide (ITO) thin films were deposited at room temperature using a combined single-beam ion source and magnetron sputtering. Furthermore, the ion beam resulted in the formation of polycrystalline ITO thin films with significantly reduced resistivity and surface roughness. Single-beam ion-source-enhanced magnetron sputtering has many potential applications in which low-temperature growth of thin films is required, such as coatings for organic solar cells.

36 MATERIALS SCIENCE↗

Trochoidal analysis of scattered electrons in a merged electron-ion beam geometry

The method and apparatus of this invention provides a plurality of measurements indicative of the absolute cross section for excitation of an ion beam. The ion beam is merged for excitation by specific energies of electrons in an electron beam. Both beams are merged in an evacuated enclosure having a longitudinal magnetic field and a crossed uniform electric field. The ions and electrons interact over a known merged longitudinal length in a merged beam area. After collision, the electron and ion beams are demerged. Forward and backward-scattered electrons are collected and position-detected by a pair of microchannel plate arrays located at opposite ends of said longitudinal beam-merging area. A series of electron and ion primary current measurements are taken at full ion and electron beam strength. Measurements are also taken at greatly reduced beam strength to obtain a beam overlap profile.

Ara Chutjian↗

Spacecraft ion beam noise effects

An estimate of the antenna noise temperature and the uplink signal-to-noise ratio has been made for Bremsstrahlung radiation emitted by a spacecraft ion beam; a worst-case situation in which the spacecraft antenna is located in the exit plane of the ion beam and directed at varying angles into the ion beam is assumed. Numerical results of the antenna noise temperature versus antenna pointing angle are given for a typical set of ion beam and antenna pattern parameters. The uplink signal-to-noise ratio due to the ion beam noise alone is given in terms of a critical range in AU at which a typical ranging transmission is received with S/N = 0 db. The effects of the ion beam divergence angle and antenna distance on the ion beam are also presented. Results of the study show typical increases in the antenna noise temperature of about 0.2 K and critical ranges of the order of 3-5 AU. An ion engine thus generally introduces an undetectable level of noise into a spacecraft receiver.

Anenberg, G. L.↗

Homogeneous alignment of nematic liquid crystals by ion beam etched surfaces

A wide range of the ion beam etch parameters are capable of producing uniform homogeneous alignment of nematic liquid crystals on SiO2 films. The alignment surfaces were generated by obliquely incident argon ions; a smaller range of ion beam parameters was also investigated with ZrO2 films and found suitable for homogeneous alignment. Extinction ratios were very high, and twist and tilt-bias angles were very small. The SEM results indicate a parallel oriented surface structure on the ion beam etched surfaces which may determine alignment.

Wintucky, E. G.↗

Ion beam sputter etching

An ion beam etching process which forms extremely high aspect ratio surface microstructures using thin sputter masks is utilized in the fabrication of integrated circuits. A carbon rich sputter mask together with unmasked portions of a substrate is bombarded with inert gas ions while simultaneous carbon deposition occurs. The arrival of the carbon deposit is adjusted to enable the sputter mask to have a near zero or even slightly positive increase in thickness with time while the unmasked portions have a high net sputter etch rate.

Banks, Bruce A.↗