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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 73 records · Page 4
All sourcesNASA NTRSDOE OSTI
NASA NTRS1973

Analysis and synthesis of distributed-lumped-active networks by digital computer

The use of digital computational techniques in the analysis and synthesis of DLA (distributed lumped active) networks is considered. This class of networks consists of three distinct types of elements, namely, distributed elements (modeled by partial differential equations), lumped elements (modeled by algebraic relations and ordinary differential equations), and active elements (modeled by algebraic relations). Such a characterization is applicable to a broad class of circuits, especially including those usually referred to as linear integrated circuits, since the fabrication techniques for such circuits readily produce elements which may be modeled as distributed, as well as the more conventional lumped and active ones.

Source record↗
NASA NTRS2001

Plasma Reactor Modeling and Validation Experiments

Plasma processing is a key processing stop in integrated circuit manufacturing. Low pressure, high density plum reactors are widely used for etching and deposition. Inductively coupled plasma (ICP) source has become popular recently in many processing applications. In order to accelerate equipment and process design, an understanding of the physics and chemistry, particularly, plasma power coupling, plasma and processing uniformity and mechanism is important. This understanding is facilitated by comprehensive modeling and simulation as well as plasma diagnostics to provide the necessary data for model validation which are addressed in this presentation. We have developed a complete code for simulating an ICP reactor and the model consists of transport of electrons, ions, and neutrals, Poisson's equation, and Maxwell's equation along with gas flow and energy equations. Results will be presented for chlorine and fluorocarbon plasmas and compared with data from Langmuir probe, mass spectrometry and FTIR.

Meyyappan, M.↗
NASA NTRS1999

Novel Three-Dimensional Vertical Interconnect Technology for Microwave and RF Applications

In this paper, novel 3D interconnects suitable for applications in microwave and RF integrated circuit technology have been presented. The interconnect fabrication process and design details are presented. In addition, measured and numerically modeled results of the performance of the interconnects have been shown. The results indicate that the proposed technology has tremendous potential applications in integrated circuit technology. C,

Goverdhanam, Kavita↗
NASA NTRS1987

The coupled dynamics of fluids and spacecraft in low gravity and low gravity fluid measurement

The very large mass fraction of liquids stored on broad current and future generation spacecraft has made critical the technologies of describing the fluid-spacecraft dynamics and measuring or gauging the fluid. Combined efforts in these areas are described, and preliminary results are presented. The coupled dynamics of fluids and spacecraft in low gravity study is characterizing the parametric behavior of fluid-spacecraft systems in which interaction between the fluid and spacecraft dynamics is encountered. Particular emphasis is given to the importance of nonlinear fluid free surface phenomena to the coupled dynamics. An experimental apparatus has been developed for demonstrating a coupled fluid-spacecraft system. In these experiments, slosh force signals are fed back to a model tank actuator through a tunable analog second order integration circuit. In this manner, the tank motion is coupled to the resulting slosh force. Results are being obtained in 1-g and in low-g (on the NASA KC-135) using dynamic systems nondimensionally identical except for the Bond numbers.

Hansman, R. John↗
NASA NTRS1996

Computational Modeling of Ultrafast Pulse Propagation in Nonlinear Optical Materials

There is an emerging technology of photonic (or optoelectronic) integrated circuits (PICs or OEICs). In PICs, optical and electronic components are grown together on the same chip. rib build such devices and subsystems, one needs to model the entire chip. Accurate computer modeling of electromagnetic wave propagation in semiconductors is necessary for the successful development of PICs. More specifically, these computer codes would enable the modeling of such devices, including their subsystems, such as semiconductor lasers and semiconductor amplifiers in which there is femtosecond pulse propagation. Here, the computer simulations are made by solving the full vector, nonlinear, Maxwell's equations, coupled with the semiconductor Bloch equations, without any approximations. The carrier is retained in the description of the optical pulse, (i.e. the envelope approximation is not made in the Maxwell's equations), and the rotating wave approximation is not made in the Bloch equations. These coupled equations are solved to simulate the propagation of femtosecond optical pulses in semiconductor materials. The simulations describe the dynamics of the optical pulses, as well as the interband and intraband.

Goorjian, Peter M.↗
NASA NTRS2009

A Mathematical Model of a Simple Amplifier Using a Ferroelectric Transistor

This paper presents a mathematical model characterizing the behavior of a simple amplifier using a FeFET. The model is based on empirical data and incorporates several variables that affect the output, including frequency, load resistance, and gate-to-source voltage. Since the amplifier is the basis of many circuit configurations, a mathematical model that describes the behavior of a FeFET-based amplifier will help in the integration of FeFETs into many other circuits.

Sayyah, Rana↗
NASA NTRS1987

A technique for evaluating the application of the pin-level stuck-at fault model to VLSI circuits

Accurate fault models are required to conduct the experiments defined in validation methodologies for highly reliable fault-tolerant computers (e.g., computers with a probability of failure of 10 to the -9 for a 10-hour mission). Described is a technique by which a researcher can evaluate the capability of the pin-level stuck-at fault model to simulate true error behavior symptoms in very large scale integrated (VLSI) digital circuits. The technique is based on a statistical comparison of the error behavior resulting from faults applied at the pin-level of and internal to a VLSI circuit. As an example of an application of the technique, the error behavior of a microprocessor simulation subjected to internal stuck-at faults is compared with the error behavior which results from pin-level stuck-at faults. The error behavior is characterized by the time between errors and the duration of errors. Based on this example data, the pin-level stuck-at fault model is found to deliver less than ideal performance. However, with respect to the class of faults which cause a system crash, the pin-level, stuck-at fault model is found to provide a good modeling capability.

Palumbo, Daniel L.↗
NASA NTRS1973

Variable Time Base Integrator Circuit for Buffet Signal Measurements

A measurement circuit to obtain buffet data from wind tunnel models wherein a signal proportional to the average RMS value of buffet data is produced for subsequent recording. Feedback means are employed to suppress the D.C. portion of signals developed by the strain gages during dynamic testing. Automatic recording of gain settings of amplifiers employed in the circuit is also provided.

Batts, Colossie N.↗
NASA NTRS1995

Flexible Multiplexed Surface Temperature Sensor

Unitary array of sensors measures temperatures at points distributed over designated area on surface. Useful in measuring surface temperatures of aerodynamic models and thermally controlled objects. Made of combination of integrated-circuit microchips and film circuitry. Temperature-sensing chips scanned at speeds approaching 10 kHz. Operating range minus 40 degrees C to 120 degrees C. Flexibility of array conforms to curved surfaces. Multiplexer eliminates numerous monitoring cables. Control of acquisition and recording of data effected by connecting array to microcomputers via suitable interface circuitry.

Daryabeigi, Kamran↗
NASA NTRS2001

Traveling-Wave Tube Amplifier Model to Predict High-Order Modulation Intersymbol Interference

Demands for increased data rates in satellite communications necessitate higher order modulation schemes, larger system bandwidth, and minimum distortion of the modulated signal as it is passed through the traveling wave tube amplifier (TWTA). One type of distortion that the TWTA contributes to is intersymbol interference (ISI), and this becomes particularly disruptive with wide-band, complex modulation schemes. It is suspected that in addition to the dispersion of the TWT, frequency dependent reflections due to mismatches within the TWT are a significant contributor to ISI. To experimentally investigate the effect of these mismatches within the physical TWT on ISI would be prohibitively expensive, as it would require manufacturing numerous amplifiers in addition to the acquisition of the required digital hardware. In an attempt to develop a more accurate model to correlate IS1 with the TWTA and the operational signal, a fully three-dimensional (3D), time-dependent, TWT interaction model has been developed using the electromagnetic particle-in-cell (PIC) code MAFIA (solution of Maxwell's equations by the Finite-Integration-Algorithm). The model includes a user defined slow-wave circuit with a spatially tapered region of loss to implement a sever, and spatially varied geometry (such as helical pitch) to implement a phase velocity taper. The model also includes user defined input/output coupling and an electron beam contained by solenoidal, electrostatic, or periodic permanent magnet (PPM) focusing allowing standard or novel TWTs to be investigated. This model comprehensively takes into account the effects of frequency dependent nonlinear distortions (MAM and AMPM); gain ripple due to frequency dependent reflections at the input/output coupling, severs, and mismatches from dynamic pitch variations; drive induced oscillations; harmonic generation; intermodulation products; and backward waves.

Kory, Carol L.↗
NASA NTRS2002

Simulation Model of A Ferroelectric Field Effect Transistor

An electronic simulation model has been developed of a ferroelectric field effect transistor (FFET). This model can be used in standard electrical circuit simulation programs to simulate the main characteristics of the FFET. The model uses a previously developed algorithm that incorporates partial polarization as a basis for the design. The model has the main characteristics of the FFET, which are the current hysterisis with different gate voltages and decay of the drain current when the gate voltage is off. The drain current has values matching actual FFET's, which were measured experimentally. The input and output resistance in the model is similar to that of the FFET. The model is valid for all frequencies below RF levels. A variety of different ferroelectric material characteristics can be modeled. The model can be used to design circuits using FFET'S with standard electrical simulation packages. The circuit can be used in designing non-volatile memory circuits and logic circuits and is compatible with all SPICE based circuit analysis programs. The model is a drop in library that integrates seamlessly into a SPICE simulation. A comparison is made between the model and experimental data measured from an actual FFET.

MacLeod, Todd C.↗
NASA NTRS1990

Calculating Second-Order Effects in MOSFET's

Collection of mathematical models includes second-order effects in n-channel, enhancement-mode, metal-oxide-semiconductor field-effect transistors (MOSFET's). When dimensions of circuit elements relatively large, effects neglected safely. However, as very-large-scale integration of microelectronic circuits leads to MOSFET's shorter or narrower than 2 micrometer, effects become significant in design and operation. Such computer programs as widely-used "Simulation Program With Integrated Circuit Emphasis, Version 2" (SPICE 2) include many of these effects. In second-order models of n-channel, enhancement-mode MOSFET, first-order gate-depletion region diminished by triangular-cross-section deletions on end and augmented by circular-wedge-cross-section bulges on sides.

Benumof, Reuben↗
NASA NTRS1999

The Biolink Implantable Telemetry System

Most biotelemetry applications deal with the moderated data rates of biological signals. Few people have studied the problem of transcutaneous data transmission at the rates required by NASA's Life Sciences-Advanced BioTelemetry System (LS-ABTS). Implanted telemetry eliminate the problems associated with wire breaking the skin, and permits experiments with awake and unrestrained subjects. Our goal is to build a low-power 174-216MHz Radio Frequency (RF) transmitter suitable for short range biosensor and implantable use. The BioLink Implantable Telemetry System (BITS) is composed of three major units: an Analog Data Module (ADM), a Telemetry Transmitter Module (TTM), and a Command Receiver Module (CRM). BioLink incorporates novel low-power techniques to implement a monolithic digital RF transmitter operating at 100kbps, using quadrature phase shift keying (QPSK) modulation in the 174-216MHz ISM band. As the ADM will be specific for each application, we focused on solving the problems associated with a monolithic implementation of the TTM and CRM, and this is the emphasis of this report. A system architecture based on a Frequency-Locked Loop (FLL) Frequency Synthesizer is presented, and a novel differential frequency that eliminates the need for a frequency divider is also shown. A self sizing phase modulation scheme suitable for low power implementation was also developed. A full system-level simulation of the FLL was performed and loop filter parameters were determined. The implantable antenna has been designed, simulated and constructed. An implant package compatible with the ABTS requirements is also being proposed. Extensive work performed at 200MHz in 0.5um complementary metal oxide semiconductors (CMOS) showed the feasibility of integrating the RF transmitter circuits in a single chip. The Hajimiri phase noise model was used to optimize the Voltage Controlled Oscillator (VCO) for minimum power consumption. Two test chips were fabricated in a 0.5pm, 3V CMOS process. Measured phase noise for a 1.5mW, 200MHz ring oscillator VCO is -80dBc/Hz at 100KHZ offset, showing good agreement with the theory. We also propose a novel superregenerative receiver architecture for implementing the command receiver. The superregenerative receiver's simplicity, low cost, and low power consumption has made it the receiver of choice for short-distance data communications, remote control and home automation. We present the design of a superregenerative AM receiver implemented in a 0.5um CMOS technology that operates at 433.92MHz and dissipates only 300uW. Further work entails detailed transistor-level design of the FLL and superregenerative receiver and a monolithic implementation of an implantable transceiver in 0.5um CMOS technology.

Betancourt-Zamora, Rafael J.↗
NASA NTRS2001

Accurate Time-Dependent Traveling-Wave Tube Model Developed for Computational Bit-Error-Rate Testing

The phenomenal growth of the satellite communications industry has created a large demand for traveling-wave tubes (TWT's) operating with unprecedented specifications requiring the design and production of many novel devices in record time. To achieve this, the TWT industry heavily relies on computational modeling. However, the TWT industry's computational modeling capabilities need to be improved because there are often discrepancies between measured TWT data and that predicted by conventional two-dimensional helical TWT interaction codes. This limits the analysis and design of novel devices or TWT's with parameters differing from what is conventionally manufactured. In addition, the inaccuracy of current computational tools limits achievable TWT performance because optimized designs require highly accurate models. To address these concerns, a fully three-dimensional, time-dependent, helical TWT interaction model was developed using the electromagnetic particle-in-cell code MAFIA (Solution of MAxwell's equations by the Finite-Integration-Algorithm). The model includes a short section of helical slow-wave circuit with excitation fed by radiofrequency input/output couplers, and an electron beam contained by periodic permanent magnet focusing. A cutaway view of several turns of the three-dimensional helical slow-wave circuit with input/output couplers is shown. This has been shown to be more accurate than conventionally used two-dimensional models. The growth of the communications industry has also imposed a demand for increased data rates for the transmission of large volumes of data. To achieve increased data rates, complex modulation and multiple access techniques are employed requiring minimum distortion of the signal as it is passed through the TWT. Thus, intersymbol interference (ISI) becomes a major consideration, as well as suspected causes such as reflections within the TWT. To experimentally investigate effects of the physical TWT on ISI would be prohibitively expensive, as it would require manufacturing numerous amplifiers, in addition to acquiring the required digital hardware. As an alternative, the time-domain TWT interaction model developed here provides the capability to establish a computational test bench where ISI or bit error rate can be simulated as a function of TWT operating parameters and component geometries. Intermodulation products, harmonic generation, and backward waves can also be monitored with the model for similar correlations. The advancements in computational capabilities and corresponding potential improvements in TWT performance may prove to be the enabling technologies for realizing unprecedented data rates for near real time transmission of the increasingly larger volumes of data demanded by planned commercial and Government satellite communications applications. This work is in support of the Cross Enterprise Technology Development Program in Headquarters' Advanced Technology & Mission Studies Division and the Air Force Office of Scientific Research Small Business Technology Transfer programs.

Kory, Carol L.↗
NASA NTRS1972

Optimization in the design of a 12 gigahertz low cost ground receiving system for broadcast satellites. Volume 1: System design, performance, and cost analysis

The technical and economical feasibility of using the 12 GHz band for broadcasting from satellites were examined. Among the assigned frequency bands for broadcast satellites, the 12 GHz band system offers the most channels. It also has the least interference on and from the terrestrial communication links. The system design and analysis are carried out on the basis of a decision analysis model. Technical difficulties in achieving low-cost 12 GHz ground receivers are solved by making use of a die cast aluminum packaging, a hybrid integrated circuit mixer, a cavity stabilized Gunn oscillator and other state-of-the-art microwave technologies for the receiver front-end. A working model was designed and tested, which used frequency modulation. A final design for the 2.6 GHz system ground receiver is also presented. The cost of the ground-terminal was analyzed and minimized for a given figure-of-merit (a ratio of receiving antenna gain to receiver system noise temperature). The results were used to analyze the performance and cost of the whole satellite system.

Ohkubo, K.↗
NASA NTRS1986

Modeling and analysis of cascade solar cells

A brief review is given of the present status of the development of cascade solar cells. It is known that photovoltaic efficiencies can be improved through this development. The designs and calculations of the multijunction cells, however, are quite complicated. The main goal is to find a method which is a compromise between accuracy and simplicity for modeling a cascade solar cell. Three approaches are presently under way, among them (1) equivalent circuit approach, (2) numerical approach, and (3) analytical approach. Here, the first and the second approaches are discussed. The equivalent circuit approach using SPICE (Simulation Program, Integrated Circuit Emphasis) to the cascade cells and the cascade-cell array is highlighted. The methods of extracting parameters for modeling are discussed.

Ho, F. D.↗
NASA NTRS2011

Modeling from Local to Subsystem Level Effects in Analog and Digital Circuits Due to Space Induced Single Event Transients

Single Event Transients in analog and digital electronics from space generated high energetic nuclear particles can disrupt either temporarily and sometimes permanently the functionality and performance of electronics in space vehicles. This work first provides some insights into the modeling of SET in electronic circuits that can be used in SPICE-like simulators. The work is then directed to present methodologies, one of which was developed by this author, for the assessment of SET at different levels of integration in electronics, from the circuit level to the subsystem level.

State Transistion Model.↗
NASA NTRS1985

1985 Annual Conference on Nuclear and Space Radiation Effects, 22nd, Monterey, CA, July 22-24, 1985, Proceedings

Basic mechanisms of radiation effects in structures and materials are discussed, taking into account the time dependence of interface state production, process dependent build-up of interface states in irradiated N-channel MOSFETs, bias annealing of radiation and bias induced positive charges in n- and p-type MOS capacitors, hole removal in thin-gate MOSFETs by tunneling, and activation energies of oxide charge recovery in SOS or SOI structures after an ionizing pulse. Other topics investigated are related to radiation effects in devices, radiation effects in integrated circuits, spacecraft charging and space radiation effects, single-event phenomena, hardness assurance and radiation sources, SGEMP/IEMP phenomena, EMP phenomena, and dosimetry and energy-dependent effects. Attention is given to a model of the plasma wake generated by a large object, gate charge collection and induced drain current in GaAs FETs, simulation of charge collection in a multilayer device, and time dependent dose enhancement effects on integrated circuit transient response mechanisms.

Jones, C. W.↗