Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “implantation”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 73 records · Page 4
All sourcesNASA NTRSDOE OSTI
NASA NTRS1994

Friction and Wear Properties of As-deposited and Carbon Ion-implanted Diamond Films

Recent work on the friction and wear properties of as-deposited and carbon ion-implanted diamond films was reviewed. Diamond films were produced by the microwave plasma chemical vapor deposition (CVD) technique. Diamond films with various grain sizes and surface roughnesses were implanted with carbon ions at 60 ke V ion energy, resulting in a dose of 1.2310(exp 17) carbon ions/cm(exp 2). Various analytical techniques, including Raman spectroscopy, proton recoil analysis, Rutherford backscattering, transmission and scanning electron microscopy, x-ray photoelectron spectroscopy, and x-ray diffraction, were utilized to characterize the diamond films. Sliding friction experiments were conducted with a polished natural diamond pin in contact with diamond films in the three environments: humid air (40 percent relative humidity), dry nitrogen (less than 1 percent relative humidity), and ultrahigh vacuum (10(exp -7) Pa). The CVD diamond films indeed have friction and were properties similar to those of natural diamond in the three environments. The as-deposited, fine-grain diamond films can be effectively used as self-lubricating, wear-resistant coatings that have low coefficients of friction (0.02 to 0.04) and low wear rates (10(exp -7) to 10(exp -8)mm(exp 3)/N-m) in both humid air and dry nitrogen. However, they have high coefficients of friction (1.5 to 1.7) and a high wear rate (10(exp -4)mm(exp 3/N-m) in ultrahigh vacuum. The carbon ion implanation produced a thin surficial layer (less than 0.1 micron thick) of amorphous, nondiamond carbon on the diamond films. In humid air and dry nitrogen, the ion-implanted, fine- and coarse-grain diamond films have a low coefficient of friction (around 0.1) and a low wear rate (10(exp -7)mm(exp 3/N-m). Even in ultrahigh vacuum, the presence of the nondiamond carbon layer reduced the coefficient of friction of fine-grain diamond films to 0.1 or lower and the wear rate to 10(exp -6)mm(exp 3)/N-m. Thus, the carbon ion-implanted, fine-grain diamond films can be effectively used as wear-resistant, self-lubricating coatings not only in air and dry nitrogen, but also in ultrahigh vacuum. The wear mechanism of diamond films is that of small fragments chipping off the surface. The size of wear particles is related to the extent of wear rates.

Miyoshi, Kazuhisa↗
NASA NTRS1995

Hip Implant Modified To Increase Probability Of Retention

Modification in design of hip implant proposed to increase likelihood of retention of implant in femur after hip-repair surgery. Decreases likelihood of patient distress and expense associated with repetition of surgery after failed implant procedure. Intended to provide more favorable flow of cement used to bind implant in proximal extreme end of femur, reducing structural flaws causing early failure of implant/femur joint.

Canabal, Francisco, III↗
NASA NTRS1997

The Optical Properties of Ion Implanted Silica

We will present our investigation on the change in the optical properties of silica, 'suprasil', after keV through MeV implantation of copper, tin, silver and gold and after annealing. Suprasil-1, name brand of silica glass produced by Hereaus Amerisil, which is chemically pure with well known optical properties. Both linear nonlinear optical properties of the implanted silica were investigated before and after thermal annealing. All implants, except for Sn, showed strong optical absorption bands in agreement with Mie's theory. We have also used Z-scan to measure the strength of the third order nonlinear optical properties of the produced thin films, which is composed of the host material and the metallic nanoclusters. For implants with a measurable optical absorption band we used Doyle's theory and the full width half maximum of the absorption band to calculate the predicted size of the formed nanoclusters at various heat treatment temperatures. These results are compared with those obtained from direct observation using transmission electron microscopic techniques.

Smith, Cydale C.↗
NASA NTRS1997

Third Order Optical Nonlinearity of Colloidal Metal Nanoclusters Formed by MeV Ion Implantation

We report the results of characterization of nonlinear refractive index of the composite material produced by MeV Ag ion implantation of LiNbO(sub 3) crystal (z-cut). The material after implantation exhibited a linear optical absorption spectrum with the surface plasmon peak near 430 nm attributed to the colloidal silver nanoclusters. Heat treatment of the material at 500 deg C caused a shift of the absorption peak to 550 nm. The nonlinear refractive index of the sample after heat treatment was measured in the region of the absorption peak with the Z-scan technique using a tunable picosecond laser source (4.5 ps pulse width).The experimental data were compared against the reference sample made of MeV Cu implanted silica with the absorption peak in the same region. The nonlinear index of the Ag implanted LiNbO(sub 3) sample produced at five times less fluence is on average two times greater than that of the reference.

Sarkisov, S. S.↗
NASA NTRS2001

Palladium Implanted Silicon Carbide for Hydrogen Sensing

Silicon carbide is intended for use in fabrication of high-temperature, efficient hydrogen sensors. Traditionally, when a palladium coating is applied on the exposed surface of SiC, the chemical reaction between palladium and hydrogen produces a detectable change in the surface chemical potential. We have produced both a palladium coated SiC as well as a palladium, ion implanted SiC sensor. The palladium implantation was done at 500 C into the Si face of 6H, N-type SiC at various energies, and at various fluences. Then, we measured the hydrogen sensitivity response of each fabricated sensor by exposing them to hydrogen while monitoring the current flow across the p-n junction(s), with respect to time. The sensitivity of each sensor was measured at temperatures between 27 and 300 C. The response of the SiC sensors produced by Pd implantation has revealed a completely different behaviour than the SiC sensors produced by Pd deposition. In the Pd-deposited SiC sensors as well as in the ones reported in the literature, the current rises in the presence of hydrogen at room temperature as well as at elevated temperatures. In the case of Pd-implanted SiC sensors, the current decreases in the presence of hydrogen whenever the temperature is raised above 100 C. We will present the details and conclusions from the results obtained during this meeting.

Muntele, C. I.↗
NASA NTRS1991

Implanted 3He, 4He, and Xe in further studies of diamonds from Western Australia

In measurements of the noble gases in additional samples of diamonds from the Argyle and Ellendale lamproites in Western Australia we have failed to encounter any neon-rich stones such as showed solar-like isotopic compositions in earlier work. No neon was detected above the relatively high blank levels in our glass apparatus. White and brown diamonds showed no differences in noble gas content, nor did samples segregated by the color of long-wave UF fluorescence. The rare gas patterns in the 1.2 Ga Argyle pipe are largely consistent with implanted 3He, 4He, and fissiogenic Xe from U/Th in the matrix rock in which the diamonds have been stored for so long. These implanted species are absent in diamonds from the much younger (approximately 20 Ma) Ellendale pipe. We give implantation formulae for several models of inhomogeneously distributed U/Th. Differences in 3He content between pipe and alluvial Argyle samples are consistent with expected cosmogenic production in the latter. An expanded data base for helium and carbon isotopic data on the same samples supports a negative [4He]-delta 13C correlation seen earlier in work from our group, but if the Argyle samples, which contain light carbon, are corrected for implanted 4He, the correlation is considerably weakened. We no longer see an earlier 3He/4He-delta 13C correlation.

NASA Discipline Number 52-10↗
NASA NTRS2005

Implanted Silicon Resistor Layers for Efficient Terahertz Absorption

Broadband absorption structures are an essential component of large format bolometer arrays for imaging GHz and THz radiation. We have measured electrical and optical properties of implanted silicon resistor layers designed to be suitable for these absorbers. Implanted resistors offer a low-film-stress, buried absorber that is robust to longterm aging, temperature, and subsequent metals processing. Such an absorber layer is readily integrated with superconducting integrated circuits and standard micromachining as demonstrated by the SCUBA II array built by ROE/NIST (1). We present a complete characterization of these layers, demonstrating frequency regimes in which different recipes will be suitable for absorbers. Single layer thin film coatings have been demonstrated as effective absorbers at certain wavelengths including semimetal (2,3), thin metal (4), and patterned metal films (5,6). Astronomical instrument examples include the SHARC II instrument is imaging the submillimeter band using passivated Bi semimetal films and the HAWC instrument for SOFIA, which employs ultrathin metal films to span 1-3 THz. Patterned metal films on spiderweb bolometers have also been proposed for broadband detection. In each case, the absorber structure matches the impedance of free space for optimal absorption in the detector configuration (typically 157 Ohms per square for high absorption with a single or 377 Ohms per square in a resonant cavity or quarter wave backshort). Resonant structures with -20% bandwidth coupled to bolometers are also under development; stacks of such structures may take advantage of instruments imaging over a wide band. Each technique may enable effective absorbers in imagers. However, thin films tend to age, degrade or change during further processing, can be difficult to reproduce, and often exhibit an intrinsic granularity that creates complicated frequency dependence at THz frequencies. Thick metal films are more robust but the requirement for patterning can limit their absorption at THz frequencies and their heat capacity can be high. patterned absorber structures that offer low heat capacity, absence of aging, and uniform, predictable behavior at THz frequencies. We have correlated DC electrical and THz optical measurements of a series of implanted layers and studied their frequency dependence of optical absorption from .3 to 10 THz at cryogenic temperatures. We have modeled the optical response to determine the suitability of the implanted silicon resistor as a function of resistance in the range 10 Ohms/sq to 300 Ohms/sq.

Chervenak, J. A.↗
DOE OSTI2025

Effect of thermal oxidation on helium implanted pure iron

The impact of thermal oxidation on Helium (He) implanted pure iron (Fe) was investigated to experimentally evaluate how thermal oxidation influences the diffusion and distribution of He within the material. In case of the sample with the lowest dose (2 × 10 17 ions/cm 2 ), the thinnest oxide layer was observed compared to the non-implanted pure Fe. It is due to He nano bubbles implanted in the material, which hinder the diffusion of Fe ions necessary for forming the oxide layer. For the medium dose sample (5 × 10 17 ions/cm 2 ), the oxide layer was slightly thicker than that of the lowest dose, however it had more porous structure due to the numerous nano He bubbles. In addition, a large bubble region around 150–200 nm depth was generated. Here, the highest dose sample (1 × 10 18 ions/cm 2 ) was observed that the escape of He was accelerated by the large amount of nano He bubbles from within the metal, forming a porous Fe matrix on the top surface and an oxide layer that is very porous but thicker than those of lower doses.

He implantation↗
DOE OSTI2025

Stress engineering for crack and dendrite prevention in solid electrolytes via ion implantation

Solid-state batteries represent a promising technology that offers safer and more densely packed energy storage. A primary cause of failure in solid-state cells is the penetration of metal dendrites through the solid electrolyte. Here, we report that fluorine-ion implantation can enhance the mechanical resistance of solid electrolyte Li 6.5 La 3 Zr 1.5 Ta 0.5 O 12 to dendrite propagation by inducing residual compressive stress in the subsurface of the electrolyte. Ion implantation modifies subsurface residual stress and also alters the electrolyte’s surface, resulting in multifunctional enhancement. The combined chemical and mechanical effects of ion implantation enable reversible lithium metal stripping and plating at elevated current densities while enhancing air stability and mitigating the formation of a harmful carbonate layer at the surface. This study provides new insights into a scalable dendrite-suppression strategy for designing solid-state batteries suitable for cycling at room temperature and low stack pressures.

25 ENERGY STORAGE↗
DOE OSTI2025

Tuning Chiral Anomaly Signature in a Dirac Semimetal via Fast-Ion Implantation

Cd 3 As 2 is a Dirac semimetal that hosts a chiral anomaly, functioning as a platform to realize energy applications. We use fast-ion implantation to enhance the negative longitudinal magnetoresistance (NLMR)─signature of a chiral anomaly─in Nb-doped Cd 3 As 2 thin films. High-energy ion implantation is used to investigate semiconductors and nuclear materials but is rarely employed to study topological materials. We use electrical transport and transmission electron microscopy to characterize the NLMR and crystallinity of Nb-doped Cd 3 As 2 . We find surface-doped thin films display a maximum NLMR around B = 7 T and bulk-doped thin films display a maximum over B = 9 T─all while maintaining crystallinity. This is more than a 100% relative enhancement of the maximum NLMR compared to pristine Cd 3 As 2 . As a result, our work demonstrates the potential of high-energy ion implantation as a practical route to explore chiralitronic properties in topological semimetals.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS2024

RF Characterization of a Photocurable PEDOT:PSS:PEGDA Conductive Biomaterial for 3D-Printing Implantable Antennas

In this work, we demonstrate photocurable PEDOT:PSS:PEGDA biomaterial as a promising candidate for intracorporeal 3D printing. Intracorporeal 3D printing offers a less invasive method which offer flexibility to tailor the form factor of printed structures. Previous work has demonstrated the feasibility of a robotic probe to 3D-print biological tissues intracorporeally via a minor incision. This same probe could also 3D-print implantable antennas as long as a suitable conductive material is identified in terms of conductivity, biocompatibility, and ability to cure at room/body temperature for safety purposes. We assess the frequency-dependent conductivity of this biomaterial and explore the Radio-Frequency (RF) performance of resulting antennas operating in free-space and inside tissue-emulating phantoms. Results show that PEDOT:PSS biomaterial with 21% and 30% PEGDA content exhibit a conductivity of ~10 4 S/m up to 5 GHz, suitable for wireless implants. Comparing the two, 21% PEGDA content exhibits poorer curing abilities, while 30% PEGDA exhibits slightly lower conductivity. Measurements for 2.4 GHz free-space dipoles conducted in an anechoic chamber reveal only ~0.8 dB and ~1 dB lower gain for PEDOT:PSS:21%PEGDA and PEDOT:PSS:30%PEGDA biomaterial, respectively, as compared to their copper counterpart. For a 5 mm-deep implanted patch antenna, these two biomaterials exhibit 3.05 dB and 3.84 dB higher transmission loss than copper, respectively. If deemed necessary, this performance degradation can be overcome by increasing the overall antenna size since the printing process is now minimally invasive and miniaturization requirements can be relaxed.

3D-printing↗
NASA NTRS1969

Carbon offers advantages as implant material in human body

Because of such characteristics as high strength and long-term biocompatability, aerospace carbonaceous materials may be used as surgical implants to correct pathological conditions in the body resulting from disease or injury. Examples of possible medical uses include bone replacement, implantation splints and circulatory bypass implants.

Benson, J.↗
NASA NTRS1971

Measurement of lattice damage caused by ion-implantation doping of semiconductors.

Discussion of two new techniques used to measure the lattice damage produced in GaAs by the implantation of 60 keV cadmium ions. In the first method, optical reflection spectra of the ion-implanted samples were measured in the wavelength range from 2000 to 4600 A. The decrease in reflectivity resulting from ion-implantation was used to determine the relative amount of lattice damage as a function of ion dose. The second technique employed the scanning electron microscope. Patterns very similar in appearance to Kikuchi electron diffraction patterns are obtained when the secondary and/or backscattered electron intensity is displayed as a function of the angle of incidence of the electron beam on a single crystal surface. The results of measurements made by both methods are compared with each other and with data obtained by the method of measuring lattice damage by Rutherford scattering of 1 MeV helium ions.

Hunsperger, R. G.↗
NASA NTRS1972

Use of implantable telemetry systems for study of cardiovascular phenomena.

Preliminary observations of cardiovascular function have been made in four chimpanzees using multichannel implantable units. Measurements of right- and left-sided pressures were periodically made in these animals over a four-month period, including continuous observations for selected 24-hour periods. Pressures recorded with animals in an awake, unanesthetized, unrestrained state were much lower than pressures reported for restrained animals in similar situations. Diurnal variations of pressure tended to occur, but were not as clear-cut as those reported to occur for humans. The ability to implant a transmitter chronically and receive useful multichannel information in the chimpanzee encourages the future use of such implant devices as part of the control system for an artificial heart or directly for use in man.

Sandler, H.↗
NASA NTRS1974

GaAs transistors formed by Be or Mg ion implantation

N-p-n transistor structures have been formed in GaAs by implanting n-type substrates with Be ions to form base regions and then implanting them with 20-keV Si ions to form emitters. P-type layers have been produced in GaAs by implantation of either Mg or Be ions, with substrate at room temperature, followed by annealing at higher temperatures.

Hunsperger, R. G.↗
NASA NTRS1972

The electrical properties of 60 keV zinc ions implanted into semi-insulating gallium arsenide

The electrical behavior of zinc ions implanted into chromium-doped semiinsulating gallium arsenide was investigated by measurements of the sheet resistivity and Hall effect. Room temperature implantations were performed using fluence values from 10 to the 12th to 10 to the 15th power/sq cm at 60 keV. The samples were annealed for 30 minutes in a nitrogen atmosphere up to 800 C in steps of 200 C and the effect of this annealing on the Hall effect and sheet resistivity was studied at room temperature using the Van der Pauw technique. The temperature dependence of sheet resistivity and mobility was measured from liquid nitrogen temperature to room temperature. Finally, a measurement of the implanted profile was obtained using a layer removal technique combined with the Hall effect and sheet resistivity measurements.

Littlejohn, M. A.↗
NASA NTRS1973

Nuclear microprobe analysis of solar proton implantation profiles in lunar rock surfaces

Discussion of the results of hydrogen (proton) depth profile concentration analyses conducted on selected Apollo 16 rocks. A modeling of solar particle implantation profiles in lunar rocks is shown to trace the evolvement of these profiles under the combined influence of diffusion of atomic particles implanted in the rock, and rock surface erosion. It is also demonstrated that such diffusion may have a significant effect on the shape of the implantation profiles in certain rock materials.

Stauber, M. C.↗