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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 73 records · Page 4
All sourcesNASA NTRSDOE OSTI
NASA NTRS1982

Terraced-heterostructure large-optical-cavity AlGaAs diode laser - A new type of high-power CW single-mode device

A new terraced lateral wave confining structure is obtained by liquid phase epitaxy over channeled substrates misoriented perpendicular to the channels' direction. Single spatial and longitudinal mode CW operation is achieved to 50 mW from one facet, in large spot sizes (2 x 7.5 micron, 1/e squared points in intensity) and narrow beams (6 deg x 23 deg), full width half-power). At 70 C ambient temperature CW lasing is obtained to 15 mW from one facet. Weak mode confinement in an asymmetric lateral waveguides provides discrimination against high-order mode oscillation.

Botez, D.↗
NASA NTRS1983

Silicon superlattices. 2: Si-Ge heterostructures and MOS systems

Five main areas were examined: (1) the valence-and conduction-band-edge electronic structure of the thin layer ( 11 A) silicon-superlattice systems; (2) extension of thin-layer calculations to layers of thickness 11 A, where most potential experimental interest lies; (3) the electronic structure of thicker-layer (11 to 110 A) silicon superlattices; (4) preliminary calculations of impurity-scattering-limited electron mobility in the thicker-layer superlattices; and (5) production of the fine metal lines that would be required to produce on MOS superlattice.

Moriarty, J. A.↗
NASA NTRS1987

Heterostructure solar cells

The performance of gallium arsenide solar cells grown on Ge substrates is discussed. In some cases the substrate was thinned to reduce overall cell weight with good ruggedness. The conversion efficiency of 2 by 2 cm cells under AMO reached 17.1 percent with a cell thickness of 6 mils. The work described forms the basis for future cascade cell structures, where similar interconnecting problems between the top cell and the bottom cell must be solved. Applications of the GaAs/Ge solar cell in space and the expected payoffs are discussed.

Chang, K. I.↗
NASA NTRS1986

Variable angle of incidence spectroscopic ellipsometry Application to GaAs-Al(x)Ga(1-x)As multiple heterostructures

The sensitivity of spectroscopic ellipsometry data to multilayer model parameters is shown to be a strong function of the angle of incidence. A quantitative study of sensitivity versus angle of incidence is performed for a GaAs-Al(x)Ga(1-x)As-GaAs substrate structure, showing that maximum sensitivity to layer thicknesses and AlGaAs composition occurs near the wavelength-dependent principal angle. These results are verified by experimental measurements on two molecular-beam epitaxy grown samples.

Snyder, Paul G.↗
NASA NTRS1987

GaAs/AlGaAs heterostructure point-contact concentrator cells

Point-contact cells fabricated in silicon have recently achieved very high efficiencies. Applying this structure to GaAs is difficult as it requires both surface passivation of the GaAs and a film of GaAs with thickness less than 10 microns. The authors propose to overcome these difficulties by (1) using AlGaAs layers grown by OMCVD to act as front- and back-surface fields in order to confine the photogenerated minority carriers away from the surfaces, and (2) using the CLEFT technology to produce thin, separated films of this structure. It has been found that much of the necessary technologies have been developed and that the primary problem remaining to be solved is localized junction formation.

Gale, R. P.↗
NASA NTRS1991

A resistive-gate In(0.53)Ga(0.47)As/InP heterostructure CCD

The first InGaAs/InP charge-coupled device is demonstrated, exhibiting a charge transfer efficiency (CTE) of 0.98 at 13 MHz and 1 GHz. Cooling the device improves the CTE to greater than 0.99 at 13-MHz clock frequency. The 0.76-eV In(0.53)Ga(0.47)As bandgap makes this structure applicable to direct-detection short-wavelength infrared imagers.

Rossi, D. V.↗
NASA NTRS1995

Photoluminescence spectroscopy and the effective mass theory of strained (In,Ga)As/GaAs heterostructures grown on (112)B GaAs substrates

The photoluminescence characteristics of pseudomorphic In(0.19)Ga(0.81)As/GaAs quantum well structures grown on both the conventional (001) and the unconventional (112)B GaAs substrate are investigated. It is found that the emission spectra of the structures grown on the (112)B surface exhibit some spectral characteristics not observed on similar structures grown on the (001) surface. A spectral blue shift of the e yields hh1 transition with increasing optical pump intensity is observed for the quantum wells on the (112) surface. This shift is interpreted to be evidence of a strain-induced piezoelectric field. A second spectral feature located within the band gap of the In(0.19)Ga(0.81)As layer is also observed for the (112) structure; this feature is thought to be an impurity-related emission. The expected transition energies of the quantum well structures are calculated using the effective mass theory based on the 4 x 4 Luttinger valence band Hamiltonian, and related strain Hamiltonian.

Henderson, R. H.↗
NASA NTRS1994

Midfit dislocation generation mechanisms in InGaAs/GaAs heterostructures

An experimental investigation of misfit dislocation generation mechanisms at an InGaAs/GaAs heterointerface is reported. InGaAs epitaxial layers were grown by low-pressure oragnometallic vapor-phase epitaxy on patterned and unpatterned GaAs substrate having etch-pit densities (EPD) of 200, 1400, and 10,000 cm(exp -2). After epitaxial growth, the samples were annealed at temperatures between 650 and 750 C, and analyzed by optical and transmission electron microscopy. For the range of substrate EPD studied, it was found that the substrate EPD controls the onset of misfit dislocation generation for low-temperature epitaxy (less than 600 C) on unpatterned substrates. When epilayers were annealed at 750 C, the density of misfit dislocations was independent of the substrate EPD. These studies also show that the dominant misfit dislocation generation mechanism for films grown on patterned substrates is nucleation at the growth-mesa edge. The density of preexisting threading dislocations has little influence on misfit dislocation generation for films selectively deposited within 100 x 100 sq micrometer growth windows. For selective heteroepitaxy, misfit dislocation generation strongly depends on the crystallographic orientation of the growth-mesa edge.

Kui, J.↗
NASA NTRS1994

Theoretical study of the effect of an AlGaAs double heterostructure on metal-semiconductor-metal photodetector performance

The sizing and efficiency of an aircraft is largely determined by the performance of its high-lift system. Subsonic civil transports most often use deployable multi-element airfoils to achieve the maximum-lift requirements for landing, as well as the high lift-to-drag ratios for take-off. However, these systems produce very complex flow fields which are not fully understood by the scientific community. In order to compete in today's market place, aircraft manufacturers will have to design better high-lift systems. Therefore, a more thorough understanding of the flows associated with these systems is desired. Flight and wind-tunnel experiments have been conducted on NASA Langley's B737-100 research aircraft to obtain detailed full-scale flow measurements on a multi-element high-lift system at various flight conditions. As part of this effort, computational aerodynamic tools are being used to provide preliminary flow-field information for instrumentation development, and to provide additional insight during the data analysis and interpretation process. The purpose of this paper is to demonstrate the ability and usefulness of a three-dimensional low-order potentialflow solver, PMARC, by comparing computational results with data obtained from 1/8 scale wind-tunnel tests. Overall, correlation of experimental and computational data reveals that the panel method is able to predict reasonably well the pressures of the aircraft's multi-element wing at several spanwise stations. PMARC's versatility and usefulness is also demonstrated by accurately predicting inviscid threedimensional flow features for several intricate geometrical regions.

Salem, Ali F.↗
NASA NTRS1995

Measurements of Local Strain Variation in Si(1-x)Ge(x)/Si Heterostructures

The energy splitting of the conduction-band minimum of Si(1-x), Ge(x), due to strain has been directly measured by the application of ballistic-electron-emission microscope (BEEM) spectroscopy to Ag/Si(1-x), Ge(x) structures. Experimental values for this conduction-band splitting agree well with calculations. For Au/Si(1-x), Ge(x), however, heterogeneity in the strain of the Si(1-x), Ge(x) layer is introduced by deposition of the Au. This variation is attributed to species interdiffusion, which produces a rough Si(1-x)Ge(x) surface. Preliminary modeling indicates that the observed roughness is consistent with the strain variation measured by BEEM.

Bell, L. D.↗