Light microprobe investigation of Cu2S-CdS heterojunctions
Minority carrier diffusion lengths on sides of copper sulfide-cadmium sulfide heterojunctions measured by light microprobes
Bube, R. H.↗
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Performance potential of high-frequency heterojunction transistors
GaAs-Ge heterojunction transistors with microwave planar geometry, calculating performance for comparison with Ge homojunction transistor
Feucht, D. L.↗
Heterojunction solar cell calculations
Collection efficiency and spectral response calculations for semiconductor heterojunction solar cells
Milnes, A. G.↗
Photovoltaic properties of Cu2S-CdS heterojunctions
Heat treatment and photovoltaic properties of copper disulfide-cadmium sulfide heterojunctions, measuring I-V characteristics, capacitance and spectral response
Bube, R. H.↗
Study of semiconductor heterojunctions of ZnSe, GaAs and Ge
Experimentals characteristics of semiconductor heterojunction pairs ZnS/GaP and ZnSe/GaP
Milnes, A. G.↗
Heterojunctions involving II-VI compound semiconductors
Heterojunctions with II-VI compound semiconductors, evaluating electro-optical performance
Milnes, A. G.↗
Thermally restorable optical degradation effects in heat-treated Cu2S-CdS crystal heterojunctions.
We have shown that heat treatment alone does not produce appreciable degradation of the short-circuit current in Cu2S-CdS single-crystal photovoltaic heterojunctions. The degradation, which has been commonly observed, is the result of optically induced effects in the heat-treated cell, subsequent to the heat treatment. These optically induced effects can be correlated with photochemical changes induced in single crystals of CdS:Cd:Cu in which the density of Cu acceptors exceeds the density of excess-Cd donors. Major conclusions about the mechanism of the photovoltaic effect and heat-treatment processes can be drawn.
Kanev, S. K.↗
Photocapacitance effects at a Cu2S-CdS heterojunction.
The influence of trapped charge on the photovoltaic properties of an efficient Cu2S-CdS single-crystal heterojunction has been studied by a photocapacitance technique. For the nonheat-treated cell, a persistent increment in capacitance as high as 70% of the dark capacitance remained after illumination of the junction by band-gap light at 100 K. The additional capacitance is due to holes trapped in deep levels in the CdS depletion region near the interface. The trapped holes enhanced the 100 K photocurrent spectrum uniformly by a factor of 3 before heat treatment. After a 200 C heat treatment in air, the maximum trapped charge at 100 K enhanced the photocurrent by two orders of magnitude. The results are interpreted in terms of the tunneling through a conduction band spike of electrons photoexcited in the Cu2S.
Lindquist, P. F.↗
Heat treatment effects in Cu2S-CdS heterojunction photovoltaic cells
The dependence of the short-circuit current on photon energy, temperature, and the state of optical degradation (or enhancement) is determined in a study of the photovoltaic properties of Cu2S-CdS single-crystal heterojunctions. A coherent formulation is proposed for the relationship between enhancement and optical degradation and for their effects on the transport of a short-circuit photoexcited current and dark forward-bias current in a photovoltaic cell. Optical degradation in a Cu2S-CdS cell is shown to be identical to the optical degradation of lifetime in a homogeneous CdS:Cd:Cu crystal.
Fahrenbruch, A. L.↗
Heterojunction III-V alloy photodetectors for high-sensitivity 1.06-micrometers optical receivers
It is pointed out that currently promising technical developments related to the Nd-YAG laser technology at 1.06 micrometers cannot be implemented because of the absence of a suitable detector. Such a detector could possibly be provided in connection with new advances related to the development of the heterojunction III-V alloy photodiode. Details of detector requirements for the considered applications are discussed along with approaches to satisfy these requirements by an appropriate detector design.
Eden, R. C.↗
Efficient photovoltaic heterojunctions of indium tin oxides on silicon
Heterojunction diodes of indium tin oxide films sputtered on to p-silicon using ion-beam techniques display significant photovoltaic effects when exposed to sunlight. Galvanomagnetic and optical measurements confirm that the oxide films are highly degenerate transparent semiconductors. At a tin oxide concentration of 10%, an open-circuit voltage of 0.51 V was observed along with a short-circuit current of 32 mA/sq cm, a fill factor of 0.70, and a conversion efficiency of 12%. As the concentration was raised to 70%, the voltage remained steady, the current fell to 27 mA/sq cm, and the fill factor fell to 0.60
Dubow, J. B.↗
Visible GaAs/0.7/P/0.3/ CW heterojunction lasers
The paper reports the first low-threshold red-light-emitting heterojunction laser diodes consisting of lattice-matched Ga(As,P)/(In,Ga)P heteroepitaxial layers. A room-temperature threshold current of 3400 A/sq cm was obtained at a wavelength of about 7000 A; this value is substantially lower than those achieved at this wavelength with (Al,Ga)As lasers. For the first time, continuous-wave laser operation at temperatures as high as 10 C has been obtained for GaAs(1-x)P(x).
Kressel, H.↗
A computer analysis of heterojunction and graded composition solar cells
The development and application of a variable composition solar cell computer analysis program is discussed. The basic device equations are derived and results of the computer analysis of several Al(x)Ga(1-x)As and GaAs(1-x)P(x) solar cell structures are presented along with a discussion of the effects of interface states and various composition and doping profiles on maximum solar cell efficiency. Interface states are found to be responsible for a severe reduction in the efficiency of GaAs(1-x)P(x) cells, but do not significantly affect the behavior of Al(x)Ga(1-x)As cells. The depth of the p-n junction below the wide bandgap window layer is a critical factor in determining the loss of minority carriers to interface recombination at the heterojunction.
Sutherland, J. E.↗
Auger profiling of 'abrupt' LPE Al/x/Ga/1-x/As-GaAs heterojunctions
Auger analysis in conjunction with ion milling was used to study depth profiles of 'abrupt' Al/x/Ga/1-x/As-GaAs heterojunctions grown by liquid-phase epitaxial (LPE) techniques. Results are presented on samples with x = 0.43, 0.60, and 0.85. The interface widths obtained are listed in a table together with the growth conditions and the layer thicknesses. The values for the layer thicknesses are in the range from 125 to 950 A. It is found that for thin layers the interface widths do not differ greatly from the average value of 110A.
Garner, C. M.↗
Accelerated step-temperature aging of Al/x/Ga/1-x/As heterojunction laser diodes
Double-heterojunction A2(0.3)Ga(0.7)As/Al(0.08)Ga(0.92)As lasers (oxide-striped and Al2O3 facet coated) were subjected to step-temperature aging from 60 to 100 C. The change in threshold current and spontaneous output was monitored at 22 C. The average time required for a 20% pulsed threshold current increase ranges from about 500 h, when operating at 100 C, to about 5000 h at a 70 C ambience. At 22 C, the extrapolated time is about 1 million h. The time needed for a 50% spontaneous emission reduction is of the same order of magnitude. The resulting activation energies are approximately 0.95 eV for laser degradation and approximately 1.1 eV for the spontaneous output decrease
Kressel, H.↗
Red-emitting Ga/As,P///In,Ga/P heterojunction lasers
The paper describes in detail the properties of vapor-grown double-heterojunction lasers of Ga(As,P)/(In,Ga)P with room-temperature threshold current densities as low as 3400 A/sq cm at 7000 A and 6600 A/sq cm at 6800 A. These thresholds are three to eight times smaller than those of (Al,Ga)As lasers in this wavelength range due to the shorter-wavelength direct-indirect transition in Ga(As,P). The optical and electrical characteristics of the Ga(As,P)/(In,Ga)P lasers are found to be similar to those of (Al,Ga)As, with fundamental transverse-mode operation to 70 C, and spontaneous carrier lifetimes between 5 and 8 nsec typically observed at low current densities.
Kressel, H.↗
Germanium-on-InP heterojunction-structure LED
Ge-on-InP heterojunction structure LED has been developed where in Ge film is evaporated onto commercially available InP substrate. Forward bias of device is approximately 1 volt, and it emits light in 9.800 angstrom region. Technique permits easy and inexpensive fabrication of LED for application at this wavelength.
Hawrylo, F. Z.↗
A theoretical study of heterojunction and graded band gap type solar cells
The work performed concentrated on including multisun effects, high temperature effects, and electron irradiation effects into the computer analysis program for heterojunction and graded bandgap solar cells. These objectives were accomplished and the program is now available for such calculations.
Chiang, J. P. C.↗