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Architecture for Hard Disk Drives
Magnetic data storage has made rapid progress in terms of areal density over the past few decades. Current products have areal density levels that exceed 10(12) bits per square inch, about 1000 times greater than areal densities of the mid-1990s. Five component technologies have become hard-disk-drive industry standards over the past two decades: read heads based on giant magnetoresistance or tunneling magnetoresistance, perpendicular write heads, perpendicular recording media, heaters, and contact detection sensors. At the recording system level, shingled magnetic recording has been implemented by all disk-drive companies, but it has not become a new standard due to the additional penalty in access time (or latency). Here, interlaced magnetic recording and blocked magnetic recording are introduced and compared with conventional and shingled magnetic recording.
High-resolution single-shot spectral monitoring of hard x-ray free-electron laser radiation
We have developed an on-line spectrometer for hard x-ray free-electron laser (XFEL) radiation based on a nanostructured diamond diffraction grating and a bent crystal analyzer. Our method provides high spectral resolution, interferes negligibly with the XFEL beam, and can withstand the intense hard x-ray pulses at high repetition rates of >100 Hz. The spectrometer is capable of providing shot-to-shot spectral information for the normalization of data obtained in scientific experiments and optimization of the accelerator operation parameters. We have demonstrated these capabilities of the setup at the Linac Coherent Light Source, in self-amplified spontaneous emission mode at full energy of >1 mJ with a 120 Hz repetition rate, obtaining a resolving power of Ε/δΕ > 3 × 10 4 . In conclusion, the device was also used to monitor the effects of pulse duration down to 8 fs by analysis of the spectral spike width.
Infrared Emission from Kilonovae: The Case of the Nearby Short Hard Burst GRB 160821B
In this paper, we present constraints on Ks-band emission from one of the nearest short hard gamma-ray bursts, GRB 160821B, at z = 0.16, at three epochs. We detect a red relativistic afterglow from the jetted emission in the first epoch but do not detect any excess kilonova emission in the second two epochs. We compare upper limits obtained with Keck I/MOSFIRE to multi-dimensional radiative transfer models of kilonovae, that employ composition-dependent nuclear heating and LTE opacities of heavy elements. We discuss eight models that combine toroidal dynamical ejecta and two types of wind and one model with dynamical ejecta only. We also discuss simple, empirical scaling laws of predicted emission as a function of ejecta mass and ejecta velocity. Our limits for GRB 160821B constrain the ejecta mass to be lower than 0.03 M ⊙ for velocities greater than 0.1 c. At the distance sensitivity range of advanced LIGO, similar ground-based observations would be sufficiently sensitive to the full range of predicted model emission including models with only dynamical ejecta. Finally, the color evolution of these models shows that I–K color spans 7–16 mag, which suggests that even relatively shallow infrared searches for kilonovae could be as constraining as optical searches.
The Effect of Antiphase Boundary Tubes on the Hardness of FeAl
The high work hardening rate unique to ordered intermetallic alloys has long been attributed to antiphase boundary (APB) tubes. In this work, APB tubes are introduced in Fe–40 at. pct Al and Fe–43 at. pct Al by cold-rolling and then removed by annealing. The presence and absence of APB tubes is verified with magnetic measurements. When APB tubes are annealed out the hardness does not change, thus indicating that APB tubes do not contribute to strengthening.
Hard x-ray photoelectron spectroscopy study of As and Ga out-diffusion in In{sub 0.53}Ga{sub 0.47}As/Al{sub 2}O{sub 3} film systems
Hard x-ray photoelectron spectroscopy (HAXPES) was performed on In{sub 0.53}Ga{sub 0.47}As/Al{sub 2}O{sub 3} gate stacks as deposited and annealed at 400 Degree-Sign C, 500 Degree-Sign C, and 700 Degree-Sign C to test for out-diffusion of substrate elements. Ga and As core-level intensities increase with increasing anneal temperature, while the In intensity decreases. HAXPES was performed at two different beam energies to vary the surface sensitivity; results demonstrate Ga and As out-diffuse into the Al{sub 2}O{sub 3} film. Analysis suggests the presence of an interlayer containing Ga and As oxides, which thickens with increasing anneal temperature. Further diffusion, especially of Ga, into the Al{sub 2}O{sub 3} film is also observed with increasing anneal temperature.
A combined hard x-ray photoelectron spectroscopy and electrical characterisation study of metal/SiO{sub 2}/Si(100) metal-oxide-semiconductor structures
Combined hard x-ray photoelectron spectroscopy (HAXPES) and electrical characterisation measurements on identical Si based metal-oxide-semiconductor structures have been performed. The results obtained indicate that surface potential changes at the Si/SiO{sub 2} interface due to the presence of a thin Al or Ni gate layer can be detected with HAXPES. Changes in the Si/SiO{sub 2} band bending at zero gate voltage and the flat band voltage for the case of Al and Ni gate layers derived from the silicon core levels shifts observed in the HAXPES spectra are in agreement with values derived from capacitance-voltage measurements.
A combined capacitance-voltage and hard x-ray photoelectron spectroscopy characterisation of metal/Al{sub 2}O{sub 3}/In{sub 0.53}Ga{sub 0.47}As capacitor structures
Capacitance-Voltage (C-V) characterization and hard x-ray photoelectron spectroscopy (HAXPES) measurements have been used to study metal/Al{sub 2}O{sub 3}/In{sub 0.53}Ga{sub 0.47}As capacitor structures with high (Ni) and low (Al) work function metals. The HAXPES measurements observe a band bending occurring prior to metal deposition, which is attributed to a combination of fixed oxide charges and interface states of donor-type. Following metal deposition, the Fermi level positions at the Al{sub 2}O{sub 3}/In{sub 0.53}Ga{sub 0.47}As interface move towards the expected direction as observed from HAXPES measurements. The In{sub 0.53}Ga{sub 0.47}As surface Fermi level positions determined from both the C-V analysis at zero gate bias and HAXPES measurements are in reasonable agreement. The results are consistent with the presence of electrically active interface states at the Al{sub 2}O{sub 3}/In{sub 0.53}Ga{sub 0.47}As interface and suggest an interface state density increasing towards the In{sub 0.53}Ga{sub 0.47}As valence band edge.
Electronic structure of C and N co-doped TiO{sub 2}: A combined hard x-ray photoemission spectroscopy and density functional theory study
We have studied the electronic structure of C and N co-doped TiO{sub 2} using hard x-ray photoelectron spectroscopy and first-principles density functional theory calculations. Our results reveal overlap of the 2p states of O, N, and C in the system which shifts the valence band maximum towards the Fermi level. Combined with optical data we show that co-doping is an effective route for band gap reduction in TiO{sub 2}. Comparison of the measured valence band with theoretical photoemission density of states reveals the possibility of C on Ti and N on O site.
Accurate determination of the valence band edge in hard x-ray photoemission spectra using GW theory
We introduce a new method for determining accurate values of the valence-band maximum in x-ray photoemission spectra. Specifically, we align the sharpest peak in the valence-band region of the experimental spectrum with the corresponding feature of a theoretical valence-band density of states curve from ab initio GW theory calculations. This method is particularly useful for soft and hard x-ray photoemission studies of materials with a mixture of valence-band characters, where strong matrix element effects can render standard methods for extracting the valence-band maximum unreliable. We apply our method to hydrogen-terminated boron-doped diamond, which is a promising substrate material for novel solar cell devices. By carrying out photoemission experiments with variable light polarizations, we verify the accuracy of our analysis and the general validity of the method.
HARD X-RAY AND MICROWAVE EMISSIONS FROM SOLAR FLARES WITH HARD SPECTRAL INDICES
We analyze 10 flare events that radiate intense hard X-ray (HXR) emission with significant photons over 300 keV to verify that the electrons that have a common origin of acceleration mechanism and energy power-law distribution with solar flares emit HXRs and microwaves. Most of these events have the following characteristics. HXRs emanate from the footpoints of flare loops, while microwaves emanate from the tops of flare loops. The time profiles of the microwave emission show delays of peak with respect to those of the corresponding HXR emission. The spectral indices of microwave emissions show gradual hardening in all events, while the spectral indices of the corresponding HXR emissions are roughly constant in most of the events, though rather rapid hardening is simultaneously observed in some for both indices during the onset time and the peak time. These characteristics suggest that the microwave emission emanates from the trapped electrons. Then, taking into account the role of the trapping of electrons for the microwave emission, we compare the observed microwave spectra with the model spectra calculated by a gyrosynchrotron code. As a result, we successfully reproduce the eight microwave spectra. From this result, we conclude that the electrons that have a common acceleration and a common energy distribution with solar flares emit both HXR and microwave emissions in the eight events, though microwave emission is contributed to by electrons with much higher energy than HXR emission.
Electron energy partition in the ‘above-the-looptop’ solar hard X-ray sources
The presentation begins by considering the non-thermal fraction of electron energies (R ε ) in 'above-the-looptop' (ALT). Several spectral models area considered: isothermal model, power-law, and the newly derived kappa distribution. Technically, all 3 non-thermal models can fit the data. In the discussion of flare scenario, energy partition, energization mechanism, and collisionality are considered. It is concluded that the kappa distribution works (R ε ≲ 50%), magnetic reconnection scenario works, and Coulomb collisions may reduce the non-thermal fraction of electron energies.
Fabrication of hard x-ray zone plates with high aspect ratio using metal-assisted chemical etching
Fresnel zone plates are widely used as nanofocusing optics for x-ray microscopy, where the spatial resolution is set by the width of the finest rings while the efficiency is set by their thickness. This leads to the requirement for high aspect ratio nanofabrication. Metal-assisted chemical etching and atomic layer deposition has already been used to produce high aspect ratio zone plate structures on un-thinned silicon wafers. We demonstrate here a substantial improvement on the achieved aspect ratio up to a value of 500:1, by producing 16 nm wide platinum zones with thicknesses up to 8 µm. At the same time, the silicon substrate was thinned to 15 µm as required for a practically useful optic. First tests have shown 4.8% diffraction efficiency using 20 keV X rays. This x-ray focusing efficiency is higher than most Fresnel zone plates for this photon energy and near what has been achieved with multilayer-coated Kirkpatrick-Baez mirrors, and multilayer Laue lenses. Hard x-ray zone plates offer the advantages of easy alignment, energy tunability, and one can make many zone plates in a batch on a single silicon chip.
NuSTAR and XMM-Newton Observations of the Hard X-Ray Spectrum of Centaurus A
Abstract Not Provided
Multiwavelength Study of Quiescent States of Mrk 421 with Unprecedented Hard X-Ray Coverage Provided by NuSTAR in 2013
Abstract Not Provided