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At least 73 records · Page 4

The gallium anomaly

In order to test the end-to-end operations of gallium solar neutrino experiments, intense electron-capture sources were fabricated to measure the responses of the radiochemical SAGE and GALLEX/GNO detectors to known fluxes of low-energy neutrinos. Such tests were viewed at the time as a cross-check, given the many tests of 71 Ge recovery and counting that had been routinely performed, with excellent results. However, the four 51 Cr and 37 Ar source experiments yielded rates below expectations, a result commonly known as the Ga anomaly. As the intensity of the electron-capture sources can be measured to high precision, the neutrino lines they produce are fixed by known atomic and nuclear rates, and the neutrino absorption cross section on 71 Ga is tightly constrained by the lifetime of 71 Ge, no simple explanation for the anomaly has been found. To check these calibration experiments, a dedicated experiment BEST was performed, utilizing a neutrino source of unprecedented intensity and a detector optimized to increase statistics while providing some information on counting rate as a function of distance from the source. The results BEST obtained are consistent with the earlier solar neutrino calibration experiments, and when combined with those measurements, yield a Ga anomaly with a significance of approximately 4𝜎, under conservative assumptions. But BEST found no evidence of distance dependence and thus no explicit indication of new physics. In this review we describe the extensive campaigns carried out by SAGE, GALLEX/GNO, and BEST to demonstrate the reliability and precision of their experimental procedures, including 71 Ge recovery, counting, and analysis. We also describe efforts to define uncertainties in the neutrino capture cross section, which now include estimates of effects at the ≲ 0.5% level such as radiative corrections and weak magnetism. With the results from BEST, an anomaly remains even if one retains only the transition to the 71 Ge ground state, whose strength is fixed by the known lifetime of 71 Ge. We then consider the new-physics solution most commonly suggested to resolve the Ga anomaly, oscillations into a sterile fourth neutrino, 𝜈 𝑒 → 𝜈 𝑠 . We find such a solution generates substantial tension with several null experiments, owing to the large mixing angle required. While this does not exclude such solutions – the sterile sector might include multiple neutrinos as well as new interactions – it shows the need for more experimental constraints, if we are to make progress in resolving the Ga and other low-energy neutrino anomalies. We conclude by consider the role future low-energy electron-capture sources could play in this effort.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗

Engineering new limits to magnetostriction through metastability in iron-gallium alloys

Magnetostrictive materials transduce magnetic and mechanical energies and when combined with piezoelectric elements, evoke magnetoelectric transduction for high-sensitivity magnetic field sensors and energy-efficient beyond-CMOS technologies. The dearth of ductile, rare-earth-free materials with high magnetostrictive coefficients motivates the discovery of superior materials. Fe 1- x Ga x alloys are amongst the highest performing rare-earth-free magnetostrictive materials; however, magnetostriction becomes sharply suppressed beyond x = 19% due to the formation of a parasitic ordered intermetallic phase. Here, we harness epitaxy to extend the stability of the BCC Fe 1- x Ga x alloy to gallium compositions as high as x = 30% and in so doing dramatically boost the magnetostriction by as much as 10x relative to the bulk and 2x larger than canonical rare-earth based magnetostrictors. A Fe 1- x Ga x - [Pb(Mg 1/3 Nb 2/3 )O 3 ] 0.7 -[PbTiO 3 ] 0.3 (PMN-PT) composite magnetoelectric shows robust 90° electrical switching of magnetic anisotropy and a converse magnetoelectric coefficient of 2.0 × 10 -5 s m -1 . When optimally scaled, this high coefficient implies stable switching at ~80 aJ per bit.

36 MATERIALS SCIENCE↗

Gallium phosphide optical metasurfaces for visible light applications

There are few materials that are broadly used for fabricating optical metasurfaces for visible light applications. Gallium phosphide (GaP) is a material that, due to its optical properties, has the potential to become a primary choice but due to the difficulties in fabrication, GaP thin films deposited on transparent substrates have never been exploited. In this article we report the design, fabrication, and characterization of three different amorphous GaP metasurfaces obtained through sputtering. Although the material properties can be further optimized, our results show the potential of this material for visible applications making it a viable alternative in the material selection for optical metasurfaces.

36 MATERIALS SCIENCE↗

Tungsten oxide-coated copper gallium selenide sustains long-term solar hydrogen evolution

This work demonstrates that ultrathin (4 nm) tungsten oxide (WO 3 ) coatings on copper gallium selenide (CuGa 3 Se 5 ) photocathodes have the potential for long-term solar hydrogen evolution. We describe how with a combination of a robust 1.84 eV CuGa 3 Se 5 absorber layer, a WO 3 protective coating, and a Pt catalyst, we obtain a new durability milestone for any non-silicon photoelectrochemical hydrogen-producing device by passing 21,490 C cm -2 of charge across six weeks of continuously-illuminated chronoamperometric testing under applied bias.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Aliovalent gallium dopants remove Ti 3+ defects and improve photocatalytic and photoelectrochemical water oxidation properties of LaTiO 2 N

LaTiO 2 N is a promising semiconductor for the water splitting reaction due to its 2.1 eV band gap and stability against corrosion. However, its solar energy conversion is limited by Ti 3+ recombination defects introduced during ammonolysis. Here we show for the first time that Ti 3+ defects in LaTiO 2 N can be suppressed with incorporation of 2, 5, and 10% aliovalent gallium (Ga 3+ ) dopants during synthesis via the layered La 2 Ti 2 O 7 intermediate. Electron paramagnetic resonance (EPR) spectroscopy on the solid powders confirms a reduction in the Ti 3+ donor density from 2.97 × 10 17 cm −3 for the non-doped material to ∼6.24 × 10 16 cm −3 for 5% Ga-doped LaTiO 2 N. The remaining Ti 3+ defects are concentrated near the LaTiO 2 N surface, according to X-ray photoelectron spectroscopy. The defect reduction shifts the optical absorption edge from 2.02 to 2.09 eV and eliminates a broad absorption band at 1050 nm from the optical absorption spectra. It also removes a 1.0–1.7 eV sub-band gap photovoltage signal from surface photovoltage spectra. This suggests that empty Ti 3+ d-orbitals are located 1.0–1.7 eV above the LaTiO 2 N valence band edge. Removing these recombination states with increasing Ga 3+ content enhances the photoconversion efficiency of LaTiO 2 N during water oxidation. The optimized 2 wt% CoO x -loaded 5% Ga-doped LaTi O2 N material has a 16% AQE (400 nm) for O 2 production from aqueous silver nitrate solution and a ∼2.1 mA cm −2 water oxidation photocurrent at 1.23 V under 100 mW cm −2 Xe arc lamp illumination. The water oxidation photocurrent is stable during a 50 min test, and the Faraday efficiency for O 2 generation is 97%, confirming short-term corrosion stability of LaTiO 2 N. Altogether, these results provide a better understanding of the distribution, concentration, and impact of Ti 3+ defects on the optical, photovoltage, and photoelectrochemical properties of LaTiO 2 N. In combination with other defect control strategies, aliovalent Ga 3+ doping can help bring the solar energy conversion efficiency of LaTiO 2 N closer to the theoretical limit.

Wang, Li [University of California, Davis, CA (Uni↗

Surface photovoltage spectroscopy observes junctions and carrier separation in gallium nitride nanowire arrays for overall water-splitting

Gallium nitride (GaN) nanowire arrays on silicon are able to drive the overall water-splitting reaction with up to 3.3% solar-to-hydrogen efficiency. Photochemical charge separation is key to the operation of these devices, but details are difficult to observe experimentally because of the number of components and interfaces. Here, we use surface photovoltage spectroscopy to study charge transfer in i-, n-, and p-GaN nanowire arrays on n+ -Si wafers in the presence and absence of Rh/Cr 2 O 3 co-catalysts. The effect of the space charge layer and sub-bandgap defects on majority and minority carrier transport can be clearly observed, and estimates of the built-in potential of the junctions can be made. Transient illumination of the p-GaN/n + -Si junction generates up to -1.4 V surface photovoltage by carrier separation along the GaN nanowire axis. This process is central to the overall water-splitting function of the n + -Si/p-GaN/Rh/Cr 2 O 3 nanowire array. Overall, these results improve our understanding of photochemical charge transfer and separation in group III–V semiconductor nanostructures for the conversion of solar energy into fuels.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Neutron radiation hardness of aluminum gallium nitride UV LEDs at various wavelengths

Radiation hard diagnostics are critical to the success of nuclear fusion at National Ignition Facility, Z, ITER, and prolonged space explorations. We have first demonstrated the exceptional proton radiation hardness of initial GaN devices and qualified their space flight and deployment for missions such as the Laser Interferometer Space Antenna and International Space Station. We have further conducted neutron radiation hardness experiments at Los Alamos Neutron Science Center by opening a new high fluence beam station. During 2014–2016, we irradiated multiple Aluminum Gallium Nitride (AlGaN) LEDs with a maximum fluence of 2.4 × 1013 neutrons/cm2 in 3 years and generated 54 161 current–voltage (I–V) scan traces. Our data processing program analyzes each and all I–V traces. In addition, we retrieved local temperature records to analyze and remove temperature effects in the outdoor environment. The I–V curve families of AlGaN UV LEDs with emitting wavelengths of 265, 275, and 310 nm were compared. The I–V curves of 265 nm AlGaN UV LEDs have the smallest deviations from the average value, while the I–V curves for 310 nm AlGaN LEDs showed the largest deviations from the average value. We have reached another important recommendation for the optimal use of multiple AlGaN optoelectronic devices or imaging arrays for inertially confined fusion diagnostics: Shorter wavelength devices at 265 nm exhibit more consistent radiation hardness performance than the 310 nm devices. Higher aluminum content LEDs or AlxGa1–xN devices with higher mole fraction x for generating shorter wavelengths have better radiation hardness for fusion diagnostics.

Sun, K. -X. (ORCID:0000000224659235)↗

Gallium vacancy formation in oxygen annealed β-Ga 2 O 3

Here, the formation and character of gallium vacancies (V Ga ) and their complexes in near surface and bulk regions of single crystal β-Ga 2 O 3 were explored using unintentionally doped single crystals grown by the Czochralski method. As-grown and O 2 annealed (up to 1550 °C) samples were investigated using positron annihilation spectroscopy (PAS) to study the top 0.05–6 μm, and also current–voltage measurements and infrared (IR) spectroscopy, with hydrogenated samples to probe V Ga , to study the bulk. After annealing in O 2 > 1000 °C, the β-Ga 2 O 3 resistivity begins increasing, up to ~10 9 Ω cm for 1550 °C treatment, with the top 0.5 mm being many orders of magnitude more resistive. PAS measurements of the top 6 μm (S values) and very near surface 200 nm (diffusion length, L) indicate differential behavior as a function of peak annealing temperature. At least four temperature regimes of behavior are described. V Ga are present in the bulk after growth, but considerable changes occur upon annealing at a temperature ≈1000 °C, where L and S decrease simultaneously, suggesting an increasing defect concentration (L) but a decreasing defect volume (S). Annealing at a temperature ≈1400 °C increases S again, showing an increasing volume concentration of V Ga , with IR absorption showing a large signature of V Ga -2H, indicative of increased V Ga formation that was not present when annealing at a temperature ≈1000 °C. These results suggest that defect changes from annealing in oxygen are depth dependent, and that V Ga configuration may not be the same near the oxygen-exposed surface of the sample and in the bulk.

74 ATOMIC AND MOLECULAR PHYSICS↗

Design considerations for gallium arsenide pulse compression photoconductive switch

In this paper, we present the physics and design-space exploration of a novel pulse compression photoconductive switch (PCPS) using semi-insulating gallium arsenide (GaAs) operating in the negative differential mobility (NDM) regime of electron transport. We systematically quantify the relationship between the PCPS performance and various design options, including contact separation, laser energy and placement, and trap dynamics. Specifically, we report the full-width at half-maximum and the peak output current generated by the PCPS as a function of applied electrical and optical bias. We discuss the optimal spacing between the electrodes and the distance of the laser spot to the anode to achieve higher electron confinement and superior radio-frequency (RF) metrics. Reducing the laser energy is important to prevent the appearance of secondary peaks due to diffusive transport, but there exists a trade-off between the bandwidth and the maximum current of the PCPS. We also compare the PCPS response with and without trap dynamics and find that the electrostatic screening from the trap-induced space charge is time-independent when the trapping time constant is set larger than the recombination lifetime. Overall, trap dynamics are detrimental to performance, unless the compensation doping scheme to achieve semi-insulating GaAs is carefully selected. Results presented in this paper can be used by experimentalists to fine-tune the PCPS design parameters to meet the specifications of various RF applications. Moreover, our results will provide a strong theoretical basis to the measurements of PCPS devices using GaAs and other NDM materials under investigation.

42 ENGINEERING↗

Evaluation of silicon and indium gallium arsenide photodiodes as direct timing detectors for pulsed x-ray systems

Benchtop pulsed x-ray systems are commonly used to record dynamic material data on the order of nanoseconds, but pulse timing is often difficult to accurately determine. This study demonstrates that commercially available photodiodes can be used effectively for direct x-ray pulse detection without the need for visible light scintillators. X-ray pulses from four commercially available flash x-ray systems were quantified using one silicon and two indium gallium arsenide (InGaAs) photodiodes. The measured InGaAs pulse durations were strongly dependent on radiation dose in the non-linear operating regime, so the photodiodes were shielded to operate below the 2.5 V non-linear regime threshold. The average pulse duration and pulse arrival time jitter of the photodiodes for each x-ray source were within several nanoseconds with the exception of two sets of measurements that were affected by low instrument sensitivity and electrical noise. These results show that InGaAs photodiodes can be used as effective and repeatable stand-alone timing diagnostics for x-ray pulses as short as 20 ns or less.

47 OTHER INSTRUMENTATION↗

Measurement of spin-polarized photoemission from wurtzite and zinc blende gallium nitride photocathodes

Spin-polarized photoemission from wurtzite and zinc blende gallium nitride (GaN) photocathodes has been observed and measured. The p-doped GaN photocathodes were epitaxially grown and activated to negative electron affinity with a cesium monolayer deposited on their surfaces. A field-retarding Mott polarimeter was used to measure the spin polarization of electrons photoemitted from the top of the valence band. A spectral scan with a tunable optical parametric amplifier constructed to provide low-bandwidth light revealed peak spin polarizations of 17% and 29% in the wurtzite and zinc blende photocathodes, respectively. Zinc blende GaN results are analyzed with a spin polarization model accounting for experimental parameters used in the measurements, while possible mechanisms influencing the obtained spin polarization values of wurtzite GaN are discussed.

Physics↗

Gallium oxide (Ga2O3) as a radiation detector distinguishing neutrons and gammas

Gallium oxide (Ga2O3) is a promising ultrawide bandgap semiconductor for radiation detection with the potential of integrating electronic and scintillation functions within a single crystal device. This study establishes the scintillation response of β-Ga2O3 gamma irradiation from yttrium-88 (88Y). Then, californium-252 (252Cf) is used as a spontaneous fission source of mixed neutron and gamma radiation field to measure scintillation signals. Pulse shape discrimination and constant fraction discrimination techniques were used to separate neutron and gamma interaction events. Further investigation indicates that the prompt temporal responses of β-Ga2O3 for gammas and neutrons may enable discrimination of the two by prompt pulse fitting methods, focused around the initial peak. For gamma irradiation, we observed a rise time (τr) of 2.1 ns, decay time (τd) of 9.5 ns, and a full width at half maximum (FWHM) of 6.2 ns. For neutrons, it showed a τr of 2.3 ns, a τd of 12.1 ns, 9.4 ns FWHM, and reduced peak intensity. A diamond detector exhibited a more symmetrical τr and τd for both gamma and neutron signals and therefore is less effective at discriminating between the two by this method. This draws attention to β-Ga2O3’s ability to distinguish neutron and gamma particles. These findings showcase Ga2O3’s potential as a next-generation semiconductor for applications in nuclear safety and medical imaging, where precise discrimination between neutron and gamma interactions is essential.

Valdes, D. J. (ORCID:0000000304373720)↗

Photon Activation Analysis in Gallium, Nickel, and Vanadium

Here this research explored the development of the photonuclear production method of 67 Cu from 71 Ga as well as 47 Sc from 51 V. Both products serve as high-demand research medical radioisotopes. Furthermore, an understanding of these reactions is significant to fundamental nuclear physics and astrophysics. Bremsstrahlung flux was induced by an electron linac and a 1-mm tungsten radiator. Irradiation of gallium oxide powder, 98.78% pure 71 Ga, and a natural vanadium foil at 30.9 MeV and 100 W for 1 h produced 64.4 ± 0.4 Bq/W·s·kg of 67 Cu and 164 ± 3.1 Bq/W·s·kg of 47 Sc. A secondary irradiation with 99.6% pure 71 Ga and natural vanadium at 31.5 MeV and 100 W for 1.1 h produced 79.8 ± 0.9 Bq/W·s·kg of 67 Cu and 136 ± 7.2 Bq/W·s·kg of 47 Sc. The photoinduced activation is promising; however, further research into optimal geometry and power is required to maximize specific activity. Natural nickel was also irradiated to serve as a benchmark comparison. Effective cross sections for each reaction were inferred.

47Sc↗

Gallium-doped zinc oxide: nonlinear reflection and transmission measurements and modeling in the ENZ region

Abstract Strong nonlinear materials have been sought after for decades for applications in telecommunications, sensing, and quantum optics. Gallium-doped zinc oxide is a II–VI transparent conducting oxide that shows promising nonlinearities similar to indium tin oxide and aluminum-doped zinc oxide for the telecommunications band. Here we explore its nonlinearities in the epsilon near zero (ENZ) region and show n 2,eff values on the order of 4.5 × 10 −3 cm 2 GW −1 for IR pumping on 200–300 nm thin films. Measuring nonlinear changes in transmission and reflection with a white light source probe in the near-IR while exciting in the near-IR provides data in both time and wavelength. Three films varying in thickness, optical loss, and ENZ crossover wavelength are numerically modeled and compared to experimental data showing agreement for both dispersion and temporal relaxation. In addition, we discuss optimal excitation and probing wavelengths occur around ENZ for thick films but are red-shifted for thin films where our model provides an additional degree of freedom to explore. Obtaining accurate nonlinear measurements is a difficult and time-consuming task where our method in this paper provides experimental and modeled data to the community for an ENZ material of interest.

Ball, Adam (ORCID:0000000318167813)↗

β -delayed neutron emissions from N > 50 gallium isotopes

β-delayed γ-neutron spectroscopy has been performed on the decay of A = 84 to 87 gallium isotopes at the RI-beam Factory at the RIKEN Nishina Center using a high-efficiency array of 3 He neutron counters (BRIKEN). β-2n-γ events were measured in the decays of all of the four isotopes for the first time, which is direct evidence for populating the excited states of two-neutron daughter nuclei. Detailed decay schemes with the γ branching ratios were obtained for these isotopes, and the neutron emission probabilities (P xn ) were updated from the previous study. Hauser-Feshbach statistical model calculations were performed to understand the experimental branching ratios. We found that the P 1n and P 2n values are sensitive to the nuclear level densities of 1n daughter nuclei and showed that the statistical model reproduced the P 2n /P 1n ratio better when experimental levels plus shell-model level densities fit by the Gilbert-Cameron formula were used as the level-density input. We also showed the neutron and γ branching ratios are sensitive to the ground-state spin of the parent nucleus. Our statistical model analysis suggested J ≤ 3 for the unknown ground-state spin of the odd-odd nucleus 86 Ga, from the I γ (4 + → 2 + )/I γ (2 + → 0 + ) ratio of 84 Ga and the P 2n /P 1n ratio. In conclusion, these results show the necessity of detailed understanding of the decay scheme, including data from neutron spectroscopy, in addition to γ measurements of the multineutron emitters.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Transition from wall modes to multimodality in liquid gallium magnetoconvection

Coupled laboratory-numerical experiments of Rayleigh-Bénard convection in liquid gallium subject to a vertical magnetic field are presented. The experiments are carried out in two cylindrical containers with diameter-to-height aspect ratio Γ = 1.0 and 2.0 at varying thermal forcing (Rayleigh numbers 10 5 ≲ Ra ≲ 10 8 ) and magnetic field strength (Chandrasekhar numbers 0 ≲ Ch ≲ 3 × 10 5 ). Laboratory measurements and numerical simulations confirm that magnetoconvection in our finite cylindrical tanks onsets via nondrifting wall-attached modes, in good agreement with asymptotic predictions for a semi-infinite domain. With increasing supercriticality, the experimental and numerical thermal measurements and the numerical velocity data reveal transitions between wall mode states with different azimuthal mode numbers and between wall-dominated convection to wall and interior multimodality. These transitions are also reflected in the heat transfer data, which combined with previous studies connect onset to supercritical turbulent behaviors in liquid metal magnetoconvection over a large parameter space. The gross heat transfer behaviors between magnetoconvection and rotating convection in liquid metals are compared and discussed.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Electro-Optical Stability in Gallium Magnesium Zinc Oxide Layers for CdTe Solar Cells

In CdTe solar cells, the emitter electron density, bandgap, and band alignment can be tuned by adjusting alloy composition and stoichiometry in gallium magnesium zinc oxide (GMZO) layers, thereby allowing for critical front interface engineering. For example, computational modeling indicates efficiency can change from 7% to 25% by adjusting these buffer properties even with fixed CdSeTe and CdTe material properties. However, the GMZO as-deposited electro-optical properties can shift during subsequent CdTe deposition, CdCl 2 annealing, and solar cell operation. Here, we examine these changes by sputtering GMZO films on glass, and measuring the electron density before and after post-deposition treatments over a range of temperatures and different ambients. We then compare GMZO to SnO 2 and MZO. The addition of Ga to MgZnO is found to have profound effects on both the electron density and electro-optical stability that should be advantageous for CdTe solar cells.

41 EE - Solar Energy Technologies Office (EE-4S)↗