Fundamental studies of the metallurgical, electrical, and optical properties of gallium phosphide Quarterly progress report, Apr. 1 - Jun. 30, 1966
Studies of metallurgical, electrical, and optical properties of gallium phosphide
ELECTRIC PROPERTY↗
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Epitaxial growth of gallium arsenide with ammonium halides as transporting agents
Epitaxial growth of gallium arsenide with ammonium halides as transporting agents
CRYSTAL GROWTH↗
The nature of a moving dislocation band found when zinc is diffused into gallium arsenide
Moving dislocation band and p-n junction planarity with zinc as diffusant in gallium arsenide
ZINC↗
Application of gallium-arsenide solar cells to solar probe power systems
Gallium-arsenide solar cells applied to solar probe power systems
SPACECRAFT POWER SUPPLY↗
Single crystal gallium phosphide solar cells.
Extrinsic and intrinsic epitaxially deposited single crystal gallium phosphide solar cells, noting conversion efficiencies
SINGLE CRYSTAL↗
The vanadium-gallium system in the region of V sub 3 Ga.
Solubility range of 75 atomic percent vanadium- gallium system to determine phases in equilibrium and ascertain presence or absence of superconductivity
SUPERCONDUCTOR↗
Gallium-arsenide electro-optic modulators.
Electro-optic modulators for IR region 0.9 to 16 microns constructed by using large single crystals of high resistivity gallium arsenide
SINGLE CRYSTAL↗
Fundamental Studies of the Metallurgical, Electrical, and Optical Properties of Gallium Phosphide Quarterly Progress Report, Jul. 1 - Sep. 30, 1966
Absorption spectra of divalent iron in transition group elements and gallium phosphide
IRON↗
Fundamental studies of the metallurgical, electrical, and optical properties of gallium phosphide Quarterly progress report, Jan. 1 - Mar. 31, 1967
Photoelectrical and optical properties of gallium phosphide
PHOTOELECTRICITY↗
Fundamental studies of the metallurgical, electrical, and optical properties of gallium phosphide Quarterly progress report, 1 Apr. - 30 Jun. 1967
Photoconductivity, solubility, diffusion and electric properties of doped and undoped gallium phosphide crystals
PHOTOCONDUCTIVITY↗
Fundamental studies of the metallurgical, electrical, and optical properties of gallium phosphide Quarterly progress report, 1 Jul. - 30 Sep. 1967
Metallurgical, electrical, and optical properties of gallium phosphide
GALLIUM PHOSPHIDE↗
Gallium arsenide injection laser radar.
Range capability of gallium arsenide injection LIDAR against extended targets and corner reflectors under both negligible and high background radiation conditions
GALLIUM ARSENIDE↗
Body of Knowledge for Gallium Nitride Power Electronics
Gallium nitride (GaN), a wide bandgap (WBG) semiconductor, has emerged as a very promising material for electronic components due to the tremendous advantages it offers compared to silicon (Si), such as power capability, extreme temperature tolerance, and high frequency operation. This report serves as a body of knowledge (BOK) in reference to the development and current status of GaN technology obtained via literature and industry surveys. It provides a listing of the major manufacturers and their capabilities, as well as government, industry, and academic parties interested in the technology. The document also discusses GaN’s applications in the area of power electronics, in particular those geared for space missions. Finally, issues relevant to the reliability of GaN-based electronic parts are addressed and limitations affecting the full utilization of this technology are identified. This BOK focuses mainly on power applications for GaN, but will also briefly mention radio frequency (RF) applications for completeness.
Gallium Nitride Power Electronics↗
LET and Range Characteristics of Proton Recoil Ions in Gallium Nitride (GaN)
A better understanding of the linear energy transfer and range of proton recoil ions in gallium nitride (GaN) is provided to facilitate proper evaluation of GaN device radiation tolerance.
gallium nitride (GaN)↗
LET and Range Characteristics of Proton Recoil Ions in Gallium Nitride (GaN)
A better understanding of the linear energy transfer and the range of proton recoil ions in gallium nitride is necessary to properly evaluate GaN device radiation tolerance. By analyzing the linear energy transfer (LET) and range of recoil heavy ions in GaN we can begin to reproduce the body of knowledge that exists for Si-based devices for this upcoming technology. Although the previous data on older technology has impressive depth and breadth we must be diligent and cautious in the application of these institutional intuitions when applied to emerging technologies such as GaN. As ever increasing materials science advances emerge, a sound methodology for evaluating new technologies must be established in order to apply what we know towards the effort of ensuring radiation tolerance.
gallium nitride (GaN)↗
Gallium useful bearing lubricant in high-vaccum environment
Solid gallium is used as a lubricant on bearings made of compatible materials. Such lubricants perform well in a high vacuum and under low temperature.
Buckley, D. H.↗
Low energy proton damage effects in silicon and gallium arsenide solar cells
Proton damage effects in silicon and gallium arsenide solar cells
RADIATION EFFECT↗
Electro-optic modulator for infrared laser using gallium arsenide crystal
Gallium arsenide electro-optic modulator used for infrared lasers has a mica quarter-wave plate and two calcite polarizers to amplitude or phase modulate an infrared laser light source in the wavelength range from 1 to 3 microns. The large single crystal has uniformly high resistivities, is strain free, and comparable in quality to good optical glass.
Walsh, T. E.↗