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At least 73 records · Page 4
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Exotic edge states of C 3 high-fold fermions in honeycomb lattices

A generalization of the graphene honeycomb model to the case where each site in the honeycomb lattice contains a n -fold degenerate set of eigenstates of the C 3 symmetry has been recently proposed to describe several systems, including triangulene crystals and photonic lattices. These generalized honeycomb models are defined by ( n a , n b ) , the number of C 3 eigenstates in the a and b sites of the unit cell, resulting in n a + n b bands. Thus, the (1,1) case gives the coventional honeycomb model that describes the two low-energy bands in graphene. Generalizations, such as (2,1), (2,2), and (3,3) display several nontrivial features, such as coexisting graphenelike Dirac cones with flat bands, both at zero and finite energy, as well as robust degeneracy points where a flat band and a parabolic band meet at the Γ point. Here we explore the edge states of this class of crystals, using as reference triangulene crystals, and we find several types of edge states absent in the conventional (1,1) honeycomb case, associated to the nontrivial features of the two-dimensional bands of the high-fold case. First, we find dispersive edge states associated to the finite-energy flat bands, that occur both at the armchair and zigzag termination. Second, in the case of noncentrosymmetric triangulene crystals that lead to a S = 1 Dirac band, we have a bonding-antibonding pair of dispersive edge states, localized in the same edge so that their energy splitting is reduced as their localization increases, opposite to the conventional behavior of pairs of states localized in opposite edges. Third, for the (3,3) case, that hosts a gap separating a pair of flat conduction and valence bands, we find nondispersive edge states with E = 0 in all edge terminations. Published by the American Physical Society 2024

Madail, L. (ORCID:0000000208457748)↗
DOE OSTI2025

Unusual 5f magnetism in new kagome material UV 6 Sn 6

Materials in the family R V 6 Sn 6 (R = rare earth) provide a unique platform to investigate the interplay between local moments from R layers and nonmagnetic vanadium kagome layers. Yet, the investigation of actinide members remains scarce. Here we report the synthesis of UV 6 Sn 6 single crystals through the self-flux technique. Physical property measurements reveal two uranium-driven antiferromagnetic transitions at T N 1 = 29 K and T N 2 = 24 K, a complex field-temperature phase diagram, and unusual negative domain-wall magnetoresistance. Specific heat and angle-resolved photoemission spectroscopy measurements show a moderate f -electron enhancement to the density of states at the Fermi level (EF), whereas our band structure calculations place the vanadium flat bands 0.25 eV above E F . These findings point to a materials opportunity to expand the uranium 166 family with the goal of enhancing correlations by tuning 5 f and 3 d flat bands to E F .

36 MATERIALS SCIENCE↗
DOE OSTI2025

Unconventional Fractional Phases in Multiband Vortexable Systems

We study topological flat bands with distinct features that deviate from conventional Landau level behavior. We show that even in the ideal quantum geometry limit, moiré flat band systems can exhibit physical phenomena fundamentally different from Landau levels without lattices. In particular, we find new fractional quantum Hall states emerging from multiband vortexable systems, where multiple exactly flat bands appear at the Fermi energy. While the set of bands as a whole exhibits ideal quantum geometry, individual bands separately lose vortexability, and thus making them very different from a stack of Landau levels. At certain filling fractions, we find fractional states whose Hall conductivity deviates from the filling factor. Through careful numerical and analytical studies, we rule out all known mechanisms—such as fractional quantum Hall crystals or separate filling of trivial and topological bands—as possible explanations. Leveraging the exact solvability of vortexable systems, we use analytic Bloch wave functions to uncover the origin of these new fractional states, which arises from the commensurability between the moiré unit cell and the magnetic unit cell of an emergent effective magnetic field.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

Engineering 2D Square Lattice Hubbard Models in 90° Twisted GeX/SnX (X =S, Se) Moiré Superlattices

Because of the large-period superlattices emerging in moiré two-dimensional (2D) materials, electronic states in such systems exhibit low energy flat bands that can be used to simulate strongly correlated physics in a highly tunable setup. While many investigations have thus far focused on moiré flat bands and emergent correlated electron physics in triangular, honeycomb, and quasi-one-dimensional lattices, tunable moiré realizations of square lattices subject to strong correlations remain elusive. Here, in this work, we propose a feasible scheme to construct moiré square lattice systems by twisting two or more layers of 2D materials in a rectangular lattice by 90°. We demonstrate the concept with twisted GeX/SnX (X =S, Se) moiré superlattices and calculate their electronic structures from first principles. We show that the lowest conduction flat band in these systems can be described by a square lattice Hubbard model with parameters which can be controlled by varying the choice of host materials, number of layers, and external electric fields. In particular, twisted double bilayer GeSe realizes a square lattice Hubbard model with strong frustration due to the next-nearest-neighbor hopping that could host unconventional superconductivity, in close analogy to the Hubbard model for copper-oxygen planes of cuprate high-temperature superconductors. The presented scheme uses 90° twisted 2D materials with rectangular unit cells as a promising platform for realizing the physical phenomena of square lattice Hubbard models, establishing a new route for studying its rich phase diagram of magnetism, charge order, and unconventional superconductivity in a highly tunable setting.

2-dimensional systems↗
DOE OSTI2024

Strong electron–phonon coupling in magic-angle twisted bilayer graphene

The unusual properties of superconductivity in magic-angle twisted bilayer graphene (MATBG) have sparked considerable research interest. However, despite the dedication of intensive experimental efforts and the proposal of several possible pairing mechanisms, the origin of its superconductivity remains elusive. Here, by utilizing angle-resolved photoemission spectroscopy with micrometre spatial resolution, we reveal flat-band replicas in superconducting MATBG, where MATBG is unaligned with its hexagonal boron nitride substrate. These replicas show uniform energy spacing, approximately 150 ± 15 meV apart, indicative of strong electron–boson coupling. Strikingly, these replicas are absent in non-superconducting twisted bilayer graphene (TBG) systems, either when MATBG is aligned to hexagonal boron nitride or when TBG deviates from the magic angle. Calculations suggest that the formation of these flat-band replicas in superconducting MATBG are attributed to the strong coupling between flat-band electrons and an optical phonon mode at the graphene K point, facilitated by intervalley scattering. These findings, although they do not necessarily put electron–phonon coupling as the main driving force for the superconductivity in MATBG, unravel the electronic structure inherent in superconducting MATBG, thereby providing crucial information for understanding the unusual electronic landscape from which its superconductivity is derived.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2026

Quantitative Analysis of the Semiconductor–Electrolyte Interface Using Cyclic Voltammetry Measurements

Small changes in the chemical potential at a semiconductor interface can result in dramatic changes to the space-charge layer that underpins applications in the electronic and photovoltaic industries as well as in photoelectrochemical cells for fuel production. There has hence been great interest in techniques that directly probe the space-charge layer, yet many fail at the semiconductor–electrolyte interface due to the potential drop in the electric double-layer region of the electrolyte. This article demonstrates that photovoltages, obtained from straightforward cyclic voltammetry measurements, provide an experimental and quantitative approach for characterizing the semiconductor–electrolyte interface. Key parameters accessible through this approach include the flat-band potential ( E fb ), the fraction of the total potential that drops across the space-charge layer (γ sc ) and the electric double layer, as well as the surface recombination lifetime (τ s ). Here, we report photovoltage measurements for p -type Si(111) photoelectrodes in contact with electrolytes containing redox-active species with a range of known reduction potentials that exceed the 1.1 eV bandgap. In tetrabutylammonium [NBu 4 ] + electrolyte, the flat-band potential determined for hydrogen-terminated ( p -Si–H), methyl-terminated ( p -Si–CH 3 ), and chemically oxidized ( p -Si–cSiO x ) surfaces were −0.02, −0.31, and 0.30 V vs Fc +/0 , respectively, agreeing well with expected shifts arising from surface dipole modifications. The quantitative analysis also reveals that 67% of the applied bias drops across the space-charge layer for p -Si–H, 73% for p -Si–CH 3 , and only 44% for p -Si–cSiO x . The remaining potential drop is attributed to the interfacial surface layer, which consists of a molecular dipole or oxide overlayer, and the Helmholtz layer within the electrolyte. When the larger [NBu 4 ] + electrolyte was replaced with Li + , the flat-band position showed minimal changes, but the fraction of the potential drop across the space-charge layer increased significantly, consistent with the small cation altering the structure of the electric double layer.

electrolytes↗
DOE OSTI2025

Topological triviality of flat Hamiltonians

Landau levels play a key role in theoretical models of the quantum Hall effect. Each Landau level is degenerate, flat, and topologically nontrivial. Motivated by Landau levels, we study tight-binding Hamiltonians whose energy levels are all flat. Here, we demonstrate that in two dimensions, for such Hamiltonians, the flat bands must be topologically trivial. To that end, we show that the projector onto each flat band is necessarily strictly local. Our conclusions do not need the assumption of lattice translational invariance.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

Diverse electronic topography in a distorted kagome metal LaTi 3 ⁢Bi 4

Recent reports on a family of kagome metals of the form 𝐿⁢𝑛⁢Ti 3 ⁢Bi 4 (𝐿⁢𝑛 = Lanthanide) have stoked interest due to the combination of highly anisotropic magnetism and a rich electronic structure. The electronic structure near the Fermi level is proposed to exhibit Dirac points and van Hove singularities (VHSs). Here, in this manuscript, we use angle-resolved photoemission spectroscopy measurements in combination with density functional theory calculations to investigate the electronic structure of an interesting kagome metal LaTi 3 ⁢Bi 4 . Our results reveal multiple VHSs with one VHS located in the vicinity of the Fermi level. We clearly observe two flat bands, which originate from the destructive interference of wave functions within the Ti kagome motif. These flat bands and VHSs originate from Ti 𝑑 orbitals and are very responsive to the polarization of the incident beam. We notice a significant anisotropy in the electronic structure, resulting from the breaking of sixfold rotational symmetry in this material. Our findings demonstrate this member of Ti based kagome materials as a promising platform to explore novel emerging phenomena in the wider 𝐿⁢𝑛⁢Ti 3⁢ Bi 4 (𝐿⁢𝑛 = lanthanide) family.

electronic structure↗
DOE OSTI2025

Frustrated electron hopping from the orbital configuration in a two-dimensional lattice

Electron hopping on spatially periodic lattices gives rise to intriguing electronic behaviour. For example, hopping on the geometrically frustrated two-dimensional kagome, dice and Lieb lattices yields electronic band structures with both massless Dirac-like and perfectly dispersion-less, flat bands. As materials featuring the dice and Lieb lattice structures are scarce, an alternative approach proposes to leverage atomic orbitals to realize the characteristic electron hopping of geometrically frustrated lattices. This strategy promises to expand the list of candidate materials with frustrated electron hopping, but is yet to be shown in experiments. Here, in this study, we demonstrate frustrated hopping in the van der Waals intermetallic Pd 5 AlI 2 , emerging from the arrangement of atomic orbitals in a primitive square lattice. Using angle-resolved photoemission spectroscopy and quantum oscillation measurements, we reveal that the band structure of Pd 5 AlI 2 includes linear Dirac-like bands intersected at their crossing point by a locally flat band—an essential characteristic of frustrated hopping in Lieb and dice lattices. Moreover, this compound shows exceptional chemical stability, with its unusual bulk band structure and metallicity persisting in ambient conditions down to the monolayer limit. Hence, our results showcase a way to realize electronic structures characteristic of geometrically frustrated lattices in non-frustrated systems.

36 MATERIALS SCIENCE↗
NASA NTRS2001

A Preliminary Detection of Arcminute Scale Cosmic Microwave Background Anisotropy with the BIMA Array

We have used the Berkeley-Illinois-Maryland-Association (BIMA) array outfitted with sensitive cm-wave receivers to expand our search for minute scale anisotropy of the Cosmic Microwave Background (CMB). The interferometer was placed in a compact configuration to obtain high brightness sensitivity on arcminute scales over its 6.6' FWHM field of view. The sensitivity of this experiment to flat band power peaks at a multipole of 1 = 5530 which corresponds to an angular scale of -2'. We present the analysis of a total of 470 hours of on-source integration time on eleven independent fields which were selected based on their low IR contrast and lack of bright radio sources. Applying a Bayesian analysis to the visibility data, we find CMB anisotropy flat band power Q_flat = 6.1(+2.8/-4.8) microKelvin at 68% confidence. The confidence of a nonzero signal is 76% and we find an upper limit of Q_flat < 12.4 microKelvin at 95% confidence. We have supplemented our BIMA observations with concurrent observations at 4.8 GHz with the VLA to search for and remove point sources. We find the point sources make an insignificant contribution to the observed anisotropy.

Dawson, K. S.↗
DOE OSTI2024

When van der Waals Met Kagome: A 2D Antimonide with a Vanadium-Kagome Network

2D materials showcase unconventional properties emerging from quantum confinement effects. In this work, a “soft chemical” route allows for the deintercalation of K + from the layered antimonide KV 6 Sb 6 , resulting in the discovery of a new metastable 2D-Kagome antimonide K 0.1(1) V 6 Sb 6 with a van der Waals gap of 3.2 Å. The structure of K 0.1(1) V 6 Sb 6 was determined via the synergistic techniques, including X-ray pair distribution function analysis, advanced transmission electron microscopy, and density functional theory calculations. The K 0.1(1) V 6 Sb 6 compound crystallizes in the monoclinic space group C2/m (a = 9.57(2) Å, b = 5.502(8) Å, c = 10.23(2) Å, β = 97.6(2)°, Z = 2). The [V 6 Sb 6 ] layers in K 0.1(1) V 6 Sb 6 are retained upon deintercalation and closely resemble the layers in the parent compound, yet deintercalation results in a relative shift of the adjacent [V 6 Sb 6 ] layers. The magnetic properties of the K 0.1(1) V 6 Sb 6 phase in the 2–300 K range are comparable to those of KV 6 Sb 6 and another Kagome antimonide KV 3 Sb 5 , consistent with nearly temperature-independent paramagnetism. Electronic band structure calculation suggests a nontrivial band topology with flat bands and opening of band crossing afforded by deintercalation. Transport property measurements reveal a metallic nature for K 0.1(1) V 6 Sb 6 and a low thermal conductivity of 0.6 W K –1 m –1 at 300 K. Additionally, ion exchange in KV 6 Sb 6 via a solvothermal route leads to a successful partial exchange of K + with A + (A = Na, Rb, and Cs). Here, this study highlights the tunability of the layered structure of the KV 6 Sb 6 compound, providing a rich playground for the realization of new 2D materials.

2D↗
DOE OSTI2026

Investigating the electrical transport properties and electronic structure of Zr 2 ⁢CuSb 3

The checkerboard lattice has been proposed to host topological flat bands as a result of destructive interference among its various electronic hopping terms. However, it has proven challenging to realize experimentally due to the difficulty of isolating this structure from any significant out-of-plane bonding while maintaining structural integrity. Here, in this study, single crystals of Zr 2 CuSb 3 , a potential candidate for the checkerboard lattice, were synthesized using the solution (self-flux) method, and their structure was confirmed via x-ray diffraction. Electrical-transport measurements indicate metallic behavior with electron-dominated carriers. Angle-resolved photoemission spectroscopy reveals multiple electron pockets and significant k z broadening due to its large c axis and low dispersion features in k z . Density-functional theory (DFT) calculations further disentangle the contributions from each high-symmetry plane, providing a comprehensive characterization of electronic behavior. The DFT calculations were then used to determine the orbital contributions of the bands and detect the out-of-plane bonding which prevented the flat bands from forming.

Downey, Eoghan [Univ. of Michigan, Ann Arbor, MI (↗
DOE OSTI2025

Electronic and magnetic properties of hole-doped topological kagome Fe 1−𝑥 ⁢Mn 𝑥 ⁢Sn thin films

We have investigated the electronic and magnetic structures of topological kagome Fe 1−𝑥 ⁢Mn 𝑥 ⁢Sn (0 ≤ 𝑥 ≤ 0.3) thin films via neutron diffraction, electronic transport measurements, and ab initio density functional theory (DFT) to understand the interplay between hole doping, magnetism, and the electronic structures. Temperature-dependent neutron diffraction measurements on parent FeSn reveal the Néel temperature to be 𝑇 N ∼ 355 K and the underlying A-type antiferromagnetic ordering is associated with a wave vector 𝒒 = (001/2). Upon Mn doping to 𝑥 = 0.15, 𝑇 N decreases slightly while the magnetic ordering vector remains the same. Resistivity measurements show metallic characteristics and in-plane anisotropy down to 10 K for all the investigated samples. The effects of hole doping are mapped in terms of electronic ground state calculations via DFT which show that the Dirac point is moved closer to the Fermi level (𝐸 F ) and the flat bands get pushed away from 𝐸 F upon hole doping. However, a comparison between hole-doped Fe 1−𝑥⁢ Mn 𝑥⁢ Sn and electron-doped Fe 1−𝑥 ⁢Co 𝑥 ⁢Sn indicates that the Néel temperature does not scale with the position of 𝐸 F relative to the flat band. Furthermore, our results establish the antiferromagnetic state of FeSn and Fe 1−𝑥 ⁢Mn 𝑥⁢ Sn films at room temperature, laying the groundwork for future studies of magnetism in kagome heterostructures.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Correlation effects in magic-angle twisted bilayer graphene: An auxiliary-field quantum Monte Carlo study

Magic-angle twisted bilayer graphene (MATBG) presents a fascinating platform for investigating the effects of electron interactions in topological flat bands. The Bistritzer-MacDonald (BM) model provides a simplified quantitative description of the flat bands. Introducing long-range Coulomb interactions leads to an interacting BM (IBM) Hamiltonian, a momentum-space continuum description which offers a very natural starting point for many-body studies of MATBG. Accurate and reliable many-body computations in the IBM model are challenging, however, and have been limited mostly to special fillings or smaller lattice sizes. We employ a state-of-the-art auxiliary-field quantum Monte Carlo (AFQMC) method to study the IBM model, which constrains the sign problem to enable accurate treatment of large system sizes. We determine ground-state properties and quantify errors compared to mean-field theory calculations. Our calculations identify correlated metal states and their competition with the insulating Kramers intervalley-coherent state at both half-filling and charge neutrality. Additionally, we investigate one- and three-quarter fillings, and examine the effect of many-body corrections beyond single Slater determinant solutions. We discuss the effect that details of the IBM Hamiltonian have on the results, including different forms of double-counting corrections, and the need to establish and precisely specify many-body Hamiltonians to allow more direct and quantitative comparisons with experiments in MATBG. Published by the American Physical Society 2025

Xiao, Zhi-Yu (ORCID:0000000219531579)↗
DOE OSTI2025

Mott transition and correlation effects on strictly localized states in an octagonal quasicrystal

Flat-band systems have attracted significant attention as platforms for studying strongly correlated electron physics, where the dominance of electron-electron interactions over kinetic energy gives rise to a variety of emergent phenomena. Quasicrystals are compelling systems for studying these phenomena as they host degenerate strictly localized states at zero energy due to perfect destructive interference patterns. In this study, we use the slave-rotor mean-field approach to investigate the effects of electron interactions within the Hubbard model on the Ammann-Beenker quasicrystal. The phase diagram characterizing metallic and Mott insulator regions indicates a first-order phase transition. Our analysis shows that the local coordination number affects the local quasiparticle weight, displaying varying metallicity across the sites. Furthermore, we focus on the strictly localized states that arise in the noninteracting limit. We find that interactions and deviation from particle-hole symmetry induce spectral splitting, broadening, and partial delocalization of the localized states, depending on the local environment. In particular, certain localized states with higher coordination numbers remain more robust compared to others. Finally, our results highlight the critical role of local geometry in shaping correlation effects in flat-band quasicrystals.

Mott insulators↗
NASA NTRS1976

Fixed charge in Cr-metallized MOS capacitors

It is pointed out that the reported measurements are useful in a study of interface charge distributions. Measurements of surface-state density at the SiO2 interface given information concerning the effect of the layer thickness on the flat-band interface charge. Other measurements provide data for a determination of the silicon-silica flat-band interface charge, the metal-silica interface charge, and the difference in barrier energies at the interfaces. Measurements of Fowler-Nordheim currents as a function of oxide thickness can be used for the determination of charge distribution in the area next to the metal-silica interface. The investigation shows that the silicon-silica interface is independent of thickness down to thicknesses as low as 40 A.

Lewicki, G.↗
DOE OSTI2025

Topological Mixed Valence Model for Twisted Bilayer Graphene

Song and Bernevig (SB) have recently proposed a topological heavy-fermion description of the physics of magic angle twisted bilayer graphene (MATBG), involving the hybridization of flat-band electrons with a relativistic conduction sea. Here, we explore the consequences of this model, seeking a synthesis of understanding drawn from heavy-fermion physics and MATBG experiments. Our work identifies a key discrepancy between measured and calculated on-site Coulomb interactions, implicating renormalization effects that are not contained in the current model. With these considerations in mind, we consider a SB model with a single, renormalized on-site interaction between the f electrons, containing a phenomenological heavy-fermion binding potential on the moiré A A sites. This feature allows the simplified model to capture the periodic reset of the chemical potential with filling and the observed stability of local moment behavior. We argue that a two-stage Kondo effect will develop in MATBG as a consequence of the relativistic conduction band: Kondo I occurs at high temperatures, establishing a coherent hybridization at the Γ points and a non-Fermi liquid of incoherent fermions at the moiré K points; at much lower temperatures, Kondo II leads to a Fermi liquid in the flat band. Utilizing an auxiliary-rotor approach, we formulate a mean-field treatment of MATBG that captures this physics, describing the evolution of the normal state across a full range of filling factors. By contrasting the relative timescales of phonons and valence fluctuations in bulk heavy-fermion materials with that of MATBG, we are led to propose a valley-polaron origin to the Coulomb renormalization and the heavy-fermion binding potential identified from experiment. We also discuss the possibility that the two-fluid, non-Fermi liquid physics of the relativistic Kondo lattice is responsible for the strange-metal physics observed in MATBG. Published by the American Physical Society 2025

Lau, Liam L. H. (ORCID:0000000166039088)↗
DOE OSTI2024

Quantum-metric-induced quantum Hall conductance inversion and reentrant transition in fractional Chern insulators

The quantum metric of single-particle wave functions in topological flat bands plays a crucial role in determining the stability of fractional Chern insulating (FCI) states. Here, we unravel that the quantum metric causes the many-body Chern number of the FCI states to deviate sharply from the expected value associated with partial filling of the single-particle topological flat band. Furthermore, the variation of the quantum metric in momentum space induces band dispersion through interactions, affecting the stability of the FCI states. This causes a reentrant transition into the Fermi liquid from the FCI phase as the interaction strength increases. Published by the American Physical Society 2024

Wu, Ang-Kun (ORCID:0000000270181674)↗