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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 73 records · Page 4
All sourcesNASA NTRSDOE OSTI
DOE OSTI2026

Binary pseudo-random array standard for extreme ultraviolet lithography tool characterization

Extreme ultraviolet (EUV) imaging tools play a crucial role in EUV lithography. Achieving high accuracy in EUV metrology is essential for advanced semiconductor manufacturing. A thorough characterization of the instrumentation in use is required. Binary pseudo-random arrays (BPRAs) are an established standard for calibrating and characterizing optical instruments in the frequency domain. Here, we expand the BPRA standard to applications in EUV imaging. To extend the technology to the EUV spectral range, a high-resolution BPRA target with the smallest feature size of 40 nm is developed. The EUV BPRA target establishes an in situ and portable calibration and alignment standard for EUV imaging. The target is patterned by means of electron-beam lithography, using a nickel absorber with a thickness of 39 nm. The substrate is a 4″ silicon wafer with a molybdenum/silicon multilayer coating. To demonstrate the efficacy of the target and develop the instrument calibration protocol, the target is imaged on the Sharp Hyper-NA Actinic Reticle Review Project EUV mask microscope. Power spectral density (PSD) data are presented. The characteristics of the imaging system are imprinted on the PSD. The modulation transfer function is extracted from the PSD data. A partially coherent imaging model is used as a reference to the experimental results.

BPRA↗
DOE OSTI2025

Laser system design and critical technologies for the NSF OPAL project

The three-year NSF OPAL project is completing the preliminary design of a 2 x 25-PW all-optical parametric chirped-pulse amplification (OPCPA) system capable of delivering 500-J, 20-fs pulses. The design includes two Alpha beamlines that can be co-timed and pointed into two experimental areas for high-intensity research in several configurations. Additionally, a more flexible 2-PW Beta beam can be used in place of one Alpha beam to allow a wider range of focusing geometries and synchronized electron-beam generation for diverse experimental applications. Here, building on the development of the mid-scale MTW-OPAL prototype system, the NSF OPAL project also focuses on advancing essential technologies, such as large-grating fabrication techniques and actively-cooled disk amplifiers.

42 ENGINEERING↗
DOE OSTI2026

Understanding spectral dependance of laser-induced damage precursors in dielectric materials (Full report_23-ERD-006)

The performance of high-energy laser systems is constrained by laser-induced damage in dielectric coatings, particularly those containing hafnium oxide (HfO 2 ). While thresholds at fundamental Nd harmonics are well studied, the spectral dependence of damage initiation—especially under dual-wavelength irradiation—remains poorly characterized. This project provides the first systematic investigation of wavelength-dependent laser damage in hafnia coatings, focusing on nanoscale precursors such as craze lines, nanobubbles, stoichiometric variations, nodules, and controlled crystallization. Coatings were fabricated via ion beam sputtering and electron-beam deposition and characterized using spectrophotometry, ellipsometry, AFM, GI-XRD, RBS, PCI absorption, and fs/ns laser damage testing. Results show that craze lines, benign under infrared light, strongly initiate damage under UV due to wavelength-selective field intensification. Substituting xenon for argon suppresses nanobubbles and improves UV thresholds by up to 32%. Oxygen modulation reveals that fully oxidized films maximize UV resistance, though at the cost of porosity and stress in multilayers. HfO 2 –SiO 2 composites resist crystallization and defects while achieving ppm-level absorption and elevated thresholds, whereas full crystallization of HfO 2 enhances LIDT by reducing defects and improving thermal transport. Collectively, these findings link photon energy, defect states, and bandgap collapse, providing a predictive framework for wavelength-dependent laser damage. The outcomes directly inform the design of durable, multi-wavelength coatings for facilities such as NIF, MEC, HAPLS, and DPAL, advancing the readiness of next-generation optics.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Probing Dynamic Phase Changes in Electrochemical Systems with Cryogenic and in Situ Analytical Electron Microscopy (Final Technical Report)

In this project, we focus on the advancement of our newly developed, unique in situ and cryogenic analytical electron microscopy (AEM) techniques and the development of additional high-end capabilities to quantitatively elucidate the mechanisms of resistive state changes in solid-state electrochemical materials for non-volatile, neuromorphic memory. The objectives of the proposed research are (1) to characterize and elucidate the mechanisms by which electronic state changes occur in various solid-state devices to build guiding principles for electrochemically activated smart materials; (2) to advance our understanding of such mechanisms by coupling cryogenic and in situ techniques to control kinetics of the observed mechanisms while mitigating probe-induced damage; and (3) to utilize additional advanced techniques including electron-beam induced current and quantum mechanical simulations in order to identify the underlying fundamental science of such processes, including roles of defect formation and its effect on phase nucleation, as well as dynamics of these processes in the electrochemical systems at the nanometer scale.

25 ENERGY STORAGE↗
DOE OSTI2026

A New Route Toward Atomically Flat and Defect-Free Ge/SiGe Planar Heterostructures

Germanium-based planar heterostructures are emerging as versatile platforms for realizing quantum devices. In particular, planar Ge/SiGe quantum wells (QWs) host hole states with exceptionally high mobility and strong, electrically tunable spin–orbit interactions, enabling full electrical control of quantum information. A key requirement for these systems is the growth of microscopic, defect-free, atomically flat Ge QW heterostructures on relaxed or reverse-graded SiGe buffer layers, as well as on commercial Ge substrates. While several physical deposition techniques have demonstrated high-quality planar Ge/SiGe QWs, a major challenge remains: minimizing defect density typically requires high growth temperatures, which are incompatible with standard CMOS process flows. Here, we present a convenient low-temperature process for realizing high-quality planar SiGe/Ge heterostructures using a combination of thermal and electron-beam evaporation. We systematically map the effects of ex-situ and in-situ substrate preparation protocols, growth temperature, and post-deposition annealing conditions, and correlate these parameters with surface roughness and defect density. We find that in-situ oxide desorption conditions and post-annealing parameters have the most pronounced impact on improving surface quality. Under optimized conditions, we achieve atomically smooth surfaces with root-mean-square roughness σrms​ ≤ 10 Å and negligible defect density. Interestingly, thermally evaporated Ge layers exhibit oriented triangular crystallites that elongate upon post-annealing in the presence of high Ge vapor pressure. These results demonstrate that this simple, low-temperature deposition approach is a viable and effective route for achieving high-quality Ge QW heterostructures, with strong potential for scalable quantum computing and sensing applications.

Tripathi, Malvika [Fermilab] (ORCID:00000001989251↗
DOE OSTI2026

A New Route Toward Atomically Flat and Defect-Free Ge/SiGe Planar Heterostructures

Germanium-based planar heterostructures are emerging as versatile platforms for realizing quantum devices. In particular, planar Ge/SiGe quantum wells (QWs) host hole states with exceptionally high mobility and strong, electrically tunable spin–orbit interactions, enabling full electrical control of quantum information. A key requirement for these systems is the growth of microscopic, defect-free, atomically flat Ge QW heterostructures on relaxed or reverse-graded SiGe buffer layers, as well as on commercial Ge substrates. While several physical deposition techniques have demonstrated high-quality planar Ge/SiGe QWs, a major challenge remains: minimizing defect density typically requires high growth temperatures, which are incompatible with standard CMOS process flows. Here, we present a convenient low-temperature process for realizing high-quality planar SiGe/Ge heterostructures using a combination of thermal and electron-beam evaporation. We systematically map the effects of ex-situ and in-situ substrate preparation protocols, growth temperature, and post-deposition annealing conditions, and correlate these parameters with surface roughness and defect density. We find that in-situ oxide desorption conditions and post-annealing parameters have the most pronounced impact on improving surface quality. Under optimized conditions, we achieve atomically smooth surfaces with root-mean-square roughness σrms​ ≤ 10 Å and negligible defect density. Interestingly, thermally evaporated Ge layers exhibit oriented triangular crystallites that elongate upon post-annealing in the presence of high Ge vapor pressure. These results demonstrate that this simple, low-temperature deposition approach is a viable and effective route for achieving high-quality Ge QW heterostructures, with strong potential for scalable quantum computing and sensing applications.

Tripathi, Malvika [Fermilab] (ORCID:00000001989251↗
DOE OSTI2025

Microstructure and 77K mechanical properties of electron beam welded Cu101- Inconel 625 joints

In developing large-scale next-generation superconducting radio frequency (SRF) linear accelerators using superconducting films on Cu, the design and development of dissimilar welding and joining metals, such as Cu to Inconel, stainless steel, and Nb, are essential. In this talk, we present the development of procedures for electron-beam welding of Cu¿Inconel 625 and evaluation of the microstructure and 77K mechanical properties of the weld and base material in the welded condition and heat treatments in the 750°C ¿950°C heat treatment range. The results will be presented in the context of developing joining techniques for low-temperature applications where high conductivity and strength, vacuum hygiene, and magnetic properties of the material need consideration. The methods presented here are being deployed to thin film SRF Cu cavities at Jefferson Lab. Acknowledgment: This material is based upon work supported by the U.S. Department of Energy, Office of Science, Office of Nuclear

Khanal, Bashu↗
DOE OSTI2025

High-Speed and Hysteresis-Free Near-Infrared Optical Hydrogen Sensor Based on Ti/Pd Bilayer Thin Films

Palladium (Pd) and titanium (Ti) exhibit opposite dielectric responses upon hydrogenation, with stronger effects observed in the near-infrared (NIR) region. Leveraging this contrast, we investigated Ti/Pd bilayer thin films as a platform for NIR hydrogen sensing—particularly at telecommunication-relevant wavelengths, where such devices have remained largely unexplored. Ti/Pd bilayers coated with Teflon AF (TAF) and fabricated via sequential electron-beam and thermal evaporation were characterized using optical transmission measurements under repeated hydrogenation cycles. The Ti (5 nm)/Pd (x = 2.5 nm)/TAF (30 nm) architecture showed a 2.7-fold enhancement in the hydrogen-induced optical contrast at 1550 nm compared to Pd/TAF reference films, attributed to the hydrogen ion exchange between the Ti and Pd layers. The optimized structure, with a Pd thickness of x = 1.9 nm, exhibited hysteresis-free sensing behavior, a rapid response time (t90 < 0.35 s at 4% H2), and a detection limit below 10 ppm. It also demonstrated excellent selectivity with negligible cross-sensitivity to CO2, CH4, and CO, as well as high durability, showing less than 6% signal degradation over 135 hydrogenation cycles. These findings establish a scalable, room-temperature NIR hydrogen sensing platform with strong potential for deployment in automotive, environmental, and industrial applications.

Chemistry↗
NASA NTRS1971

Development of integral covers on solar cells

The electron-beam technique for evaporating a dielectric material onto solar cells is investigated. A process has been developed which will provide a highly transparent, low stress, 2 mil thick cover capable of withstanding conventional space type qualification tests including humidity, thermal shock, and thermal cycling. The covers have demonstrated the ability to withstand 10 to the 15th power 1 MeV electrons and UV irradiation with minor darkening. Investigation of the cell AR coating has produced a space qualifiable titanium oxide coating which will give an additional 6% current output over similar silicon oxide coated cells when covered by glass.

Stella, P.↗
NASA NTRS1972

Spin test of turbine rotor

Experimental data are presented for the tangential and radial stresses in the disks of the 36,000 horsepower, 4000 rpm turbine for the M-1 engine oxidizer turbopump. The two-stage Curtis turbine is a special light-weight design utilizing thin conical disks with hollow sheet metal blades attached by electron-beam welding techniques. The turbine was fabricated from Inconel 718, a nickel-chromium alloy. The stresses were obtained by strain-gage measurements using a slip-ring assembly to transmit the electrical signals. Measurements were made at different rotative speeds and different thermal loads. In addition to presenting test data, the report describes test equipment, design of associated hardware, test procedures, instrumentation, and tests for the selection and calibration of strain gages.

Vavra, M. H.↗
NASA NTRS1971

Annealing effects in plated-wire memory elements. I - Interdiffusion of copper and Permalloy.

Results of investigations using X-ray diffraction and electron-beam microprobe techniques have shown that copper and Permalloy platings interdiffuse at low temperatures when plated-wire memory elements are annealed for times as short as 50 hr. Measurable interdiffusion between Permalloy platings and gold substrates does not occur in similar conditions. Both magnetic and compositional changes during aging are found to occur by a thermally activated process with activation energies around 38 kcal/mol. It is shown, however, that copper-diffusion and magnetic-dispersion changes during aging are merely concurrent processes, neither being the other's cause.

Knudson, C. I.↗
NASA NTRS1972

The precision-processing subsystem for the Earth Resources Technology Satellite.

Description of the precision processor, a subsystem in the image-processing system for the Earth Resources Technology Satellite (ERTS). This processor is a special-purpose image-measurement and printing system, designed to process user-selected bulk images to produce 1:1,000,000-scale film outputs and digital image data, presented in a Universal-Transverse-Mercator (UTM) projection. The system will remove geometric and radiometric errors introduced by the ERTS multispectral sensors and by the bulk-processor electron-beam recorder. The geometric transformations required for each input scene are determined by resection computations based on reseau measurements and image comparisons with a special ground-control base contained within the system; the images are then printed and digitized by electronic image-transfer techniques.

Chapelle, W. E.↗
NASA NTRS1972

The oscillator strengths of the SO /A 3Pi/-/X 3Sigma-/ band systems.

The oscillator strengths for these SO transition band systems are calculated using RKR Franck-Condon factors and the radiative lifetime previously derived from electron-beam phase-shift measurements by Smith (1971). The SO transition concerned is of considerable astrophysical importance in the search for SO in the interstellar medium by means of space-based telescopes with monochromators since the transition probability is concentrated, as shown, in relatively few transitions from the ground state.

Smith, W. H.↗
NASA NTRS1972

New space processing experiments for the Skylab missions.

The M512 Materials Processing Facility, which is the main item of equipment for the Skylab space manufacturing experiments is described. It is basically an electron-beam welding apparatus, consisting of a battery power supply, a 20-kV electron beam source, and a spherical 40-cm-diam vacuum chamber. It will be used to perform the M551 Metals Melting Experiment, the M552 Exothermic Brazing Experiment, the M553 Sphere Forming Experiment, the M554 Composite Casting Experiment, the M555 Gallium Arsenide Crystal Growth Experiment, the M561 Whisker-Reinforced Composites Experiment, the M562 Indium Antimonide Crystal Growth, Experiment, the M563 Mixed III-V Crystal Growth Experiment, the M564 Alkali Halide Eutectics Experiment, the M565 Silver Grids Melted in Space Experiment, and the M566 Copper-Aluminum Eutectic Experiment. Three apparatus systems designed to broaden the technical scope of the experiments and to gain experience with new experimental techniques are described. These are an electrophoretic separator, an electromagnetic levitation system, and a versatile electric furnace with an electronic control system.

Bredt, J. H.↗
NASA NTRS1972

Coherent Optical Processing of Phased Array Radar Data

Interfacing a coherent optical processor, which utilizes an electron-beam addressed, potassium dideuterium phosphate (KDP) crystal modulator, with a linear phased array is studied. An abbreviated development of typical radar signals from a linear array is included. A plan for formating the spatial modulator with linear array signals is presented. The theoretical expectations which include target angle and Doppler are derived. A simulated set of M signals which are typical of a linear array of M elements was devised. This set of signals was used to modulate the wave front of collimated laser light via the KDP crystal according to the format presented.

Rogers, J. W.↗
NASA NTRS1972

Integrally covered silicon solar cells.

The electron-beam technique for evaporating dielectric materials onto solar cells has been examined and developed. Titanium oxide cell antireflection coatings have been obtained which compare to silicon monoxide in environmental capabilities and which provide 3 to 4% improvement over SiO for glass covered cells. Evaporation processes have been obtained which provide a 50 to 100 micromil thick transparent (0.5 to 1.0% absorption per mil), low stressed integral cover capable of surviving space type qualification testing. Irradiation with 10 to the 15th power 1-MeV electrons shows 2% darkening, and long term UV irradiation incurs approximately 1.3% cover darkening for 50 micromil thick covers.

Stella, P. M.↗