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At least 73 records · Page 4

GaAs-Si photon-activated switch.

Light activated low level switch consisting of electroluminescent GaAs p-n diode and double emitter silicon transistor

SWITCHING ELEMENT

Unusually Strong Near‐Infrared Photoluminescence of Highly Transparent Bulk InSe Flakes

Abstract Bulk γ‐InSe has a direct bandgap of 1.24 eV, which corresponds to near infrared wavelengths ( λ = 1.0 µm) useful in optoelectronic applications from biometric detectors to silicon photonics. However, its potential for optoelectronic applications is largely untapped due in part to the lack of quantitative studies of its optical properties. Here, the unusually low absorptance and high photoluminescence quantum efficiency of single‐crystalline InSe flakes with thickness in the hundreds of nanometers are studied. InSe emits brightly at room temperature from its direct bandgap with a peak photoluminescence quantum yield (PLQY) of 20%, despite displaying indirect bandgap like low absorption coefficient due to the symmetry of its crystal structure. By performing pump‐dependent PLQY measurements, the radiative and nonradiative recombination coefficients are extracted, including the Shockley‐Read‐Hall and Auger coefficients. Finally, a proof‐of‐concept alternating current electroluminescent device at low temperature is demonstrated to show the promise of InSe in optoelectronic technology such as highly transparent, bright NIR light sources.

Geng, Jamie

UV-Induced Degradation and Associated Metastability in TOPCon Photovoltaic Modules: Understanding Kinetics and Cell Variance

Tunnel oxide passivated contact (TOPCon) silicon photovoltaic (PV) modules are dominating the PV market, but they may be susceptible to degradation under ultraviolet (UV)-containing light. Quantifying the impacts of UV-induced degradation (UVID) is complicated by an associated metastability causing further degradation under dark storage and rapid recovery under sunlight. Here, we study modules that have -2.3% to -3.2% nonrecoverable UVID loss after 60 kWh/m2 dose of 340 nm light and additional recoverable loss under dark storage. We use in situ electroluminescence (EL) imaging to characterize the post-UVID metastability at the module level. The cell-by-cell dark degradation and recovery kinetics span a wide range from +6% to -70% changes in EL intensity after 520 h of dark storage, which returns to +- 4% of the initial post-UVID EL intensity after illumination. The kinetics follow double exponential rates with dark storage degradation time constants of 345 and 45 h, and UV light recovery time constants of 5 min and 36 s. We propose that this is consistent with prior reports of kinetics for light-soaking metastability in Al2O3 passivation. Finally, we further show that cells having high UVID also have injection-dependent effective carrier lifetimes and significant intra-cell variance, suggesting possible origins of processing inconsistency.

14 SOLAR ENERGY

Evidence of Polarization‐Type Potential‐Induced Degradation (PID‐p) in the Field and Investigation of the Recovery Mechanism on Bifacial p ‐PERC Modules

This study investigates the polarization-type potential-induced degradation (PID-p) of bifacial glass/glass p-type passivated emitter rear contact (p-PERC) modules in the field and their recovery behavior. Modules were installed with three mounting configurations providing different albedo conditions. System voltage (–600, –1500, and +1500 V) was applied to the cell circuits, with respect to the grounded module frames. No degradation was observed for positively biased modules, but PID-p was identified on the rear side when cells are negatively biased, with maximum power dropping during the first days and stabilizing at values up to 8% loss. Electroluminescence images revealed a variation of the cells' PID-p susceptibility within a module. Three parameters were shown to impact the degradation rate: rear albedo light, voltage, and wetness conditions. Degraded modules were recovered either by (1) a positive bias (+1500 V), (2) outdoor illumination with the front side facing sun, (3) outdoor illumination with the rear side facing sun, or (4) dark storage. A recovery pattern was identified with I–V parameters decreasing to a local minimum before increasing to full recovery. The proposed mechanism is based on the band bending at the rear p-type Si/AlO x/SiN x interface, going from inversion to depletion and accumulation states. Full recovery was achieved in 2–7 h for the modules recovered with the rear side facing sun, four to eight nights for the modules positively biased at night, and 10–20 days for the modules with the front side facing sun. Dark storage showed slower recovery rates as I–V parameters were not improving even after 1 month. Here, the recovery rates were correlated with the net Coulombs transferred during the preceding PID stress: When more Coulombs are transferred during the degradation, the extent of degradation is greater, leading to slower recovery rates.

14 SOLAR ENERGY

Radon-induced backgrounds in the NEXT-100 experiment

The NEXT-100 detector at the LSC aims at the first competitive search for the 0νββ decay using a high-pressure $^{136}$Xe electroluminescent time projection chamber. The first low-background run of NEXT-100 at 3.95 bar has been devoted to the measurement of the radon-induced backgrounds impacting this search. The contributions from both the internal and external airborne radon have been evaluated. The internal $^{222}$Rn activity is found to be (0.95±0.04(stat)±0.09(sys)) Bq/m$^{3}$, while no traces of $^{220}$Rn have been observed. Most of the $^{222}$Rn progeny plate-out on the surface of the cathode of the detector, leading to a rate of Rn-induced $^{214}$Bi of (0.97±0.05(stat)±0.10(sys)) Hz for visible energies above 400 keV. The corresponding background index in the 0νββ region of interest is evaluated as (7.3±1.5(stat)±0.8(sys))×10$^{−4}$ counts/(keV·kg·yr) after selection of the fully contained events. This background index is reduced to ∼4×10$^{−5}$ counts/(keV·kg·yr) by applying a topological selection requiring only one double-electron-like track in the events. This value is one order of magnitude below the total radiogenic background expectation in NEXT-100. By analyzing the correlation of the airborne radon activity and the measured rate of events in NEXT-100, it is concluded that the detector operates in a virtually radon-free environment thanks to the radon abatement system of the LSC.[graphic not available: see fulltext]

Cortes-Parra, C. [Valencia U., IFIC] (ORCID:000000

Explainable artificial intelligence relates perovskite luminescence images to current-voltage metrics

As the demand for low-cost, high-efficiency solar energy technologies grows, metal halide perovskite (MHP) solar cells have emerged as a promising candidate for next-generation photovoltaics due to their high power conversion efficiencies. However, their poor durability and issues with manufacturing consistency remain significant barriers to commercialization. In this work, we develop deep learning models to support materials characterization and provide insight into features and processes influencing performance. The models are trained using transfer learning of a pretrained model to predict relevant current-voltage (IV) metrics based on different combinations of input electroluminescence (EL) and photoluminescence (PL) images of MHP devices. We examine which image types are most informative in accurately predicting different IV metrics. Additionally, we use explainable artificial intelligence (XAI) techniques to provide insights into specific spatial features in the devices that drive differences in performance. We find that stabilized luminescence images (e.g. those collected after biasing the devices for at least 1 min) are better for predicting metrics of open-circuit voltage (by PL) and short-circuit current (by PL with EL), but that predicting fill factor and overall power output may use the time-evolution of EL images. Based on attribution masks generated by integrated gradients for each device performance metric, we further suggest different loss mechanisms associated with categories of large and small spatial defects. Overall, this case study highlights the potential applicability of XAI methodology for streamlining MHP device analysis and accelerating detailed understanding of the relationships between spatial defects and impacts on performance.

14 SOLAR ENERGY

A unified large language model–based framework for heterogeneous PV image diagnosis

With advances in imaging technologies, modern photovoltaic (PV) systems generate large volumes of heterogeneous image data, including visible, electroluminescence (EL), and infrared (IR) images. Existing PV image analysis models, particularly deep learning approaches, are typically task-specific and lack cross-modality generalization. To address this limitation, this paper proposes an open-source large language model (LLM)–based unified framework for heterogeneous PV image diagnostics. Through task-aware diagnostic prompting, the framework enables analysis of visible, EL, and IR images within a single pipeline, supporting both zero-shot and few-shot inference and binary and multiclass classification. It is compatible with state-of-the-art multimodal LLMs, including ChatGPT, Gemini, Claude, Qwen, and CLIP. The framework is evaluated on PV module condition classification (clean, soiling, snow, hail, and bird droppings) using visible images, cell crack detection using EL images, and hotspot detection using IR images. GPT-5.1 in few-shot mode achieves the best performance, with classification accuracy exceeding 97.3%. Open-source models such as Qwen and CLIP also deliver competitive results on visible images (around 90% accuracy), though their performance is more limited on EL and IR modalities. On the full ELPV dataset, the framework achieves 83.5% zero-shot accuracy, within 2.8% of the supervised CNN baseline, confirming scalability to larger benchmarks. Practical aspects such as reproducibility, response latency, and confidence estimation are systematically analyzed. The framework operates across PV image modalities without modality- or task-specific training, making it well suited as a rapid pre-screening tool to support downstream detailed diagnostics. A benchmark dataset of diverse labeled PV images is also released.

Li, Baojie

Control of Excitonic Energy Transfer in RGB Quantum Dot:Polymer Composites for Tunable White Emission

Tint-controlled white light is crucial for both illumination systems and display applications. Here, in this study, we demonstrate solution-processed quantum-dot light-emitting diodes (QD-LEDs) featuring a red–green–blue (RGB) QD–poly(methyl methacrylate) (PMMA) composite emissive layer (EML) for tunable white electroluminescence (EL). In this composite EML, PMMA functions as a dispersion matrix that modulates the interdot spacing (d), thereby controlling Förster resonance energy transfer (FRET) between QDs. By adjustment of the PMMA content, the balance of R, G, and B emissions is controlled, enabling systematic and continuous tuning of the EL color from greenish to reddish white at a fixed RGB ratio and constant driving bias. Time-resolved photoluminescence measurements confirm that the variation in the exciton lifetime with the PMMA fraction is the primary factor for tuning the EL color. Notably, nearly pure white EL with CIE coordinates close to (0.33, 0.33) is achieved using a diluted PMMA matrix without significant degradation of the electrical properties. Our results demonstrate d as an independent design parameter for decoupling color tuning from RGB composition and electrical operation, providing a versatile design framework for high-quality white- or tint-controlled QD-LEDs toward advanced solid-state lighting and display technologies.

36 MATERIALS SCIENCE

Light-Matter Interaction in Ultrastable Tunneling Nanogaps

Light emission and detection through tunnel junctions have emerged as a promising platform for studying nanoscale light–matter interactions, including electroluminescence and photoassisted transport. However, controlling these interactions in the tunneling regime has been challenging due to complex underlying mechanisms that remain poorly understood. A major obstacle is the difficulty in forming stable junctions that can function reliably over extended periods. In this study, we fabricate ultrastable tunneling junctions consisting of epitaxial indium–tin-oxide, epitaxial lutetium oxide, and gold. With their stable and consistent tunneling currents, we investigate photon-assisted transport phenomena using simple direct-current detection. Our results demonstrate that optical rectification is the primary contributor to the laser-induced current, alongside thermal effects and hot-electron currents. Furthermore, owing to their epitaxial nature and high breakdown threshold, this ultrastable platform holds promise for future real-world applications, including nanoscale light sources and multifunctional photodetectors.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH

Emissive Colloidal GaAs Quantum Dots

Colloidal quantum dots offer tunable optical properties for optoelectronic applications, but the synthesis of high-quality III–V quantum dots (QDs) other than indium pnictides, and particularly GaAs, has remained elusive due to synthetic challenges. Colloidal GaAs QDs have been reported very recently and have shown only weak band-edge photoluminescence. Here, we demonstrate a large-scale synthesis of colloidal GaAs QDs in molten salts, followed by a high-temperature surface treatment with K 2 S, which removes native oxide and enables uniform zinc chalcogenide shell growth on GaAs. These QDs demonstrate bright band-edge photoluminescence and electroluminescence in QD LED devices. Low-temperature spectroscopy reveals a well-resolved exciton fine structure with distinct bright-state splitting and temperature-independent decay dynamics from 4 to 100 K. These results establish a practical pathway for the preparation of high-quality colloidal GaAs QDs from molten salts with potential applications in quantum technologies and optoelectronics.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH

Predicting the single-site and multi-site event discrimination power of dual-phase time projection chambers

Dual-phase xenon time projection chambers (TPCs) are widely used in searches for rare dark matter and neutrino interactions, in part because of their excellent position reconstruction capability in 3D. Despite their millimeter-scale resolution along the charge drift axis, xenon TPCs face challenges in resolving single-site (SS) and multi-site (MS) interactions in the transverse plane. In this paper, we build a generic TPC model with an idealized signal readout, and use Fisher Information (FI) to predict its theoretical capability of differentiating SS and MS events using the electroluminescence signal. We also demonstrate via simulation that, when only statistical photon noise is present, the theoretical limits can be approached with conventional reconstruction algorithms like maximum likelihood estimation, and with a convolutional neural network classifier. The implications of this study on future TPC experiments will be discussed.

Physics

Characterization of Field-Exposed Photovoltaic Modules Featuring Signs of Contact Degradation

Here, this work investigates several photovoltaic (PV) modules that have shown signs of metal contact corrosion due to field exposure in a hot and humid climate. This includes two multicrystalline silicon aluminum back surface field systems with 10 and 14 years of exposure and one monocrystalline silicon passivated emitter and rear cell system with four years of exposure. A comprehensive, multiscale characterization process is used to evaluate these PV modules in great detail. Current–voltage (I−V), Suns-V OC measurements, electroluminescence imaging, infrared imaging, and ultraviolet fluorescence imaging were performed, and locations of interest were cored and analyzed using cross-sectional scanning electron microscopy (SEM). A rigorous, quantitative analysis procedure for the cross-sectional SEM images is proposed and implemented. Careful characterization does reveal that some of these PV modules do indeed exhibit the same classic signs of acetic-acid-based corrosion of the glass frit that is present at the silver/silicon interface, which have been observed previously in PV modules exposed to damp heat in an environmental chamber.

14 SOLAR ENERGY

Diagnosis of PV Cell Antireflective Coating Degradation Resulting From Hot-Humid High-Voltage Potential Aging

Corrosion of the antireflective coating on a photovoltaic cell ("ARc corrosion") has previously been observed in studies using hot-humid test conditions with external high-voltage (HV) bias. This study primarily focuses on known vulnerable legacy aluminum back surface field cells in mini-modules (MiMos) put through comparative stepped stress tests. Each cell type had MiMos at +1500 V, -1500 V, or unbiased ("Voc") potential, which were sequentially subjected to test conditions of 60 degrees C/60% relative humidity (RH) for 96 h, as in International Electrotechnical Commission Technical Specification 62804-1; 70 degrees C/70% RH for 200 h; and 85 degrees C/85% RH for 200 h. Characterizations at each step included visual camera and electroluminescence (EL) imaging, colorimetry, and current-voltage curve tracing. Final characterizations included: Suns-Voc, spatial mapping of external quantum efficiency, high-resolution photoluminescence, EL, and dark lock-in thermography imaging. Forensics were performed on extracted cores, including scanning electron microscopy (SEM) with energy-dispersive X-ray spectroscopy (EDS), X-ray photoelectron spectroscopy, and scanning Auger microscopy (SAM). Forensics were also conducted on MiMos from previous studies that underwent stepped HV aging and separate outdoor aged full-sized modules. ARc corrosion was specifically seen for the glass/encapsulant/cell side of the +1500 V (HV+) stressed MiMos and modules. Appearance, color, and reflectance were the most distinguishing characteristics relative to glass corrosion, gridline corrosion and delamination, and other concurrent degradation modes. SEM/EDS and SAM identified the conversion of silicon nitride to hydrated silica, hydrous silica, or hydrated amorphous silica, which preferentially occurred at the edges and tips of the pyramidal textured cell surface.

14 SOLAR ENERGY

A New UV Spot Test for Quality Control

Here, we present a fast, low-cost ultraviolet (UV) spot test to screen photovoltaic modules for UV-induced degradation (UVID). The measurement is based on a fiber-coupled arc lamp that delivers a highly accelerated local UV dose-approximately five years of equivalent field exposure in less than a day. Spot-exposed areas are evaluated using electroluminescence imaging. We test a “known bad” product, which was observed to experience UVID in the field, and a “known good” product which did not exhibit UVID in the field. Results indicate that the method may be useful as a quick and relatively inexpensive quality control screening tool for customers and manufacturers.

14 SOLAR ENERGY

Extended Accelerated Stress Testing of Lamination-Free Edge-Sealed Photovoltaic Minimodules

Lamination-free minimodules are constructed with silicon solar cells between glass sheets and an edge seal of polyisobutylene and silicone. These samples are stressed using a repeated sequential testing sequence including ultraviolet-containing simulated solar spectrum light exposure at elevated temperature, damp heat, humidity freeze, and thermal cycling adapted from the International Electrotechnical Commission (IEC) TS 63209-2:2022. The minimodule performance throughout the stressing is characterized by flash testing and electroluminescence imaging. Results are compared to conventional laminated minimodules using the same type of solar cells. The lamination-free minimodules experience up to 8% power loss compared to roughly 3% for the laminated versions. However, those losses, dominated by current and fill factor, are caused by glass soiling and busbar ribbon separation on the cells. When glass is replaced and the stressed cells are contacted with probes bypassing the delaminated ribbons, the initial performance is recovered, and overall losses of the lamination-free samples become negligible.

14 SOLAR ENERGY

Different Damp-Heat-Induced Series Resistance Degradation Behaviors in Fielded Crystalline Silicon Photovoltaic Modules Due to Difference in Bill of Materials

This case study investigates mono-crystalline silicon modules from underperforming portions of a utility-scale photovoltaic power plant. Field-collected I-V curves and electroluminescence imaging suggested that increased series resistance was a primary factor driving module degradation. Selected modules were removed from the field for further analysis, including incremental damp heat accelerated testing, which confirmed a progression in series resistance degradation. Two distinct cell degradation behaviors became apparent during the investigation. Cross-sectional scanning electron microscopy (with elemental analysis) and scanning spreading resistance microscopy identified key differences between the two degradation mechanisms, primarily grid finger width and contact resistance. Additionally, the study highlights the reliability implications of retest requirements in International Electrotechnical Commission 61215 for material changes and how they may have mitigated the degradation observed at this site.

14 SOLAR ENERGY

Diagnosis of PV Cell Passivation Degradation Resulting from Hot-Humid, High Voltage Potential Aging

Corrosion of the antireflective coating on the cell ("AR c corrosion") was previously observed in studies using hot-humid test conditions with external high voltage (HV) bias. Because AR c corrosion is not well understood, mini-modules (MiMos) were examined in a comparative experiment using PERC and PERT as well as legacy Al-BSF cells. For separate MiMos with the cell circuit electrical at +1500 V, -1500 V, or unbiased "V oc", test conditions in the comparative study included 60degrees C/60% RH for 96 h, as in IEC TS 62804-1; 70degrees C/70%RH for 200 h; and 85degrees C/85% RH for 200 h. Characterizations at each read point included: camera and electroluminescence (EL) imaging, colorimetry, and I-V curve tracing. Characterizations at the final read point included: SunsVoc; spatially mapping external quantum efficiency (EQE); high resolution: photoluminescence (PL), EL, and dark lock-in thermographic (DLIT) imaging. Forensics were performed on extracted cores, including scanning electron microscopy (SEM) with energy-dispersive X-ray spectroscopy (EDS) and scanning Auger microscopy (SAM). Forensics were also conducted on MiMos (stepped HV aging) and full-sized modules (outdoor aging) from previous studies. AR c corrosion was specifically observed for the glass/encapsulant/cell side of +1500 V (HV+) stressed MiMos, where appearance, color, and reflectance were the characteristics most distinguished relative to simultaneously occurring degradation modes. SEM/EDS and SAM identified conversion of silicon nitride to silicon oxide or hydrous silica, preferentially occurring at the edges and tips of the pyramidal textured cell surface.

aging