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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 73 records · Page 4
All sourcesNASA NTRSDOE OSTI
DOE OSTI2012

Gain comparison in polar and nonpolar/ semipolar gallium-nitride-based laser diodes

Experimental gain spectra at continuous-wave (CW) operation of laser diodes (LDs) fabricated from c-plane, nonpolar and semipolar GaN-based materials emitting in violet, blue and green spectral regions are presented. Gain spectra were obtained using the Hakki–Paoli method at high resolution. The ability of the setup to resolve the sharp Fabry–Perot longitudinal peaks of the lasers at all injection currents allowed us to accurately measure the current density to reach transparency on the devices characterized in this work, and determine both total losses and differential modal gain curves up to threshold. We present a comparison of transparency current density and modal gain for nonpolar and c-plane LDs in violet and blue regions. The main parameters for the analysis are the internal electric fields (for c-plane lasers), hole effective masses and valence band splittings. In a preliminary analysis, we investigated the gain spectrum of semipolar green LDs and observed a significantly lower total linewidth (homogeneous plus inhomogeneous) than reported elsewhere, which seems to indicate that inhomogeneous broadening is not the main issue governing the evolution toward high performance green LDs.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Performance and breakdown characteristics of irradiated vertical power GaN P-i-N diodes

Electrical performance and defect characterization of vertical GaN P-i-N diodes before and after irradiation with 2.5 MeV protons and neutrons is investigated. Devices exhibit increase in specific on-resistance following irradiation with protons and neutrons, indicating displacement damage introduces defects into the p-GaN and n- drift regions of the device that impact on-state device performance. The breakdown voltage of these devices, initially above 1700 V, is observed to decrease only slightly for particle fluence <; 10 13 cm -2 . Furthermore, the unipolar figure of merit for power devices indicates that while the on-resistance and breakdown voltage degrade with irradiation, vertical GaN P-i-Ns remain superior to the performance of the best available, unirradiated silicon devices and on-par with unirradiated modern SiC-based power devices.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
NASA NTRS1977

JAN transistor and diode characterization test program, JANTX diode 1N5623

A statistical summary of the electrical characterization of diodes and transistors is presented. Each parameter is presented with test conditions, mean, standard deviation, lowest reading, 10% point (where 10% of all readings are equal to or less than the indicated reading), 90% point (where 90% of all readings are equal to or less than indicated reading) and the highest reading.

Takeda, H.↗