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We present destructive single-event effects characterization of a variety of silicon Schottky diodes from different manufacturers. We also discuss suitable derating guidelines.
Light close to and within the near infrared range has documented benefits for promoting wound healing in human and animal studies. Our preliminary results using light-emitting diodes (LEDs) in this range have also demonstrated two-to five-fold increases in growth-phase-specific DNA synthesis in normal fibroblasts, muscle cells, osteoblasts, and mucosal epithelial cells in tissue cultures. However, the mechanisms of action of such light on cells are poorly understood. We hypothesized that the therapeutic effects of such light result from the stimulation of cellular events associated with increases in cytochrome oxidase activity. As a first step in testing our hypothesis, we subjected primary neuronal cultures to impulse blockade by tetrodotoxin (TTX), a voltage-dependent sodium channel blocker, and applied LED light at 670 nm to determine if it could partially or fully reverse the reduction of cytochrome oxidase activity by TTX. The wavelength and parameters were previously tested to be beneficial for wound healing.
Miniature Stirling-cycle cooler effective in continously cooling PbSnTe tunable diode laser to stable operating temperature near 80 K. Simplifies laboratory diode-laser spectroscopy and instruments for use aboard aircraft and balloons.
New submount technology is essential for the development of conductively cooled high power diode laser. The simulation and experimental results indicate that thermal conductivity of submount for high power laser-diode must be at least 600 W/m/k or higher for stable operation. We have simulated several theoretical thermal model based on new submount designs and characterized high power diode lasers to determine temperature effects on the performances of laser diodes. The characterization system measures the beam power, output beam profile, temperature distribution, and spectroscopic property of high power diode laser. The characterization system is composed of four main parts: an infrared imaging camera, a CCD camera, a monochromator, and a power meter. Thermal characteristics of two commercial-grade CW 20-W diode laser bars with open heat-sink type were determined with respect to the line shift of emission spectra and beam power stability. The center wavelength of laser emission has a tendency to shift toward longer wavelength as the driving current and heat sink temperature are increased. The increase of heat sink temperature decreases the output power of the laser bar too. Such results lay the guidelines for the design of new submount for high power laser-diodes.
The reliability of switching diode JANTX1N5614 was tested. The effect of power/temperature step stress on the diode was determined. Control sample units were maintained for verification of the electrical parametric testing. Results are reported.
Collision effect on electron diode current-voltage characteristics for region between two plane electrodes
Point-kernel computation and experimental measurements of gamma heating effects during thermionic diode irradiation
Scanning electron microscope applications in study of current multiplication, avalanche breakdown, and thermal runaway - Nonthermal effects in Read diodes
Computer program for calculating large signal nonlinear transient effects in avalanche diode
We consider the self-beating of incoherent light from an extended source at a wideband photomixer. The intermediate frequency mean squared current is found to be proportional to the product of the direct detected source power and the power within the IF bandpass about the optical frequency and within the heterodyne field of view. Thus the ratio of the heterodyne signal to self-beating power is proportional to the ratio of local oscillator power to direct detected power. This ratio is usually large for systems employing efficient local oscillators that generate shot-noise-limited operation. In less efficient systems, such as those employing tunable diode lasers, the effects of self-mixing may be significant.
From I-V measurements on Single Barrier Varactors (SBV) at different temperatures we concluded that thermionic emission across the barrier of the actual device is mainly due to transport through the X band. The same structure was also modeled with a one-dimensional drift-diffusion model, including a 'boundary condition' for thermionic emission across the heterojunction interface. By including thermionic field emission through the top of the triangular barrier of a biased diode and the effect of a non-abrupt interface at the heterojunction, we obtained good agreement between the modeled and measured I-V characteristics.
A 650 Mbps laser communications testbed under construction for the development of flight qualifiable hardware suitable for near-term operation on geosynchronous-to-geosynchronous crosslink missions is presented. The program's primary purpose is to develop and optimize laser communications unique subsystems. Requirements for the testbed experiments are to optimize the acquisition processes, to fully simulate the long range (up to 21,000 km) and the fine tracking characteristics of two narrow-beam laser communications terminals, and to fully test communications performance which will include average and burst bit error rates, effects of laser diode coalignment, degradation due to internal and external stray light, and the impact of drifts in the optical components.
New wide bandgap semiconductor materials are being developed to meet the diverse high temperature, -power, and -frequency demands of the aerospace industry. Two of the most promising emerging materials are silicon carbide (SiC) for high-temperature and high power applications and gallium nitride (GaN) for high-frequency and optical (blue-light-emitting diodes and lasers) applications. This past year Glenn scientists implemented a NASA-patented crystal growth process for producing arrays of device-size mesas whose tops are atomically flat (i.e., step-free). It is expected that these mesas can be used for fabricating SiC and GaN devices with major improvements in performance and lifetime. The promising new SiC and GaN devices are fabricated in thin-crystal films (known as epi films) that are grown on commercial single-crystal SiC wafers. At this time, no commercial GaN wafers exist. Crystal defects, known as screw defects and micropipes, that are present in the commercial SiC wafers propagate into the epi films and degrade the performance and lifetime of subsequently fabricated devices. The new technology isolates the screw defects in a small percentage of small device-size mesas on the surface of commercial SiC wafers. This enables atomically flat surfaces to be grown on the remaining defect-free mesas. We believe that the atomically flat mesas can also be used to grow GaN epi films with a much lower defect density than in the GaN epi films currently being grown. Much improved devices are expected from these improved low-defect epi films. Surface-sensitive SiC devices such as Schottky diodes and field effect transistors should benefit from atomically flat substrates. Also, we believe that the atomically flat SiC surface will be an ideal surface on which to fabricate nanoscale sensors and devices. The process for achieving atomically flat surfaces is illustrated. The surface steps present on the "as-received" commercial SiC wafer is also illustrated. because of the small tilt angle between the crystal "basal" plane and the polished wafer surface. These steps are used in normal SiC epi film growth in a process known as stepflow growth to produce material for device fabrication. In the new process, the first step is to etch an array of mesas on the SiC wafer top surface. Then, epi film growth is carried out in the step flow fashion until all steps have grown themselves out of existence on each defect-free mesa. If the size of the mesas is sufficiently small (about 0.1 by 0.1 mm), then only a small percentage of the mesas will contain an undesired screw defect. Mesas with screw defects supply steps during the growth process, allowing a rough surface with unwanted hillocks to form on the mesa. The improvement in SiC epi surface morphology achievable with the new technology is shown. An atomic force microscope image of a typical SiC commercial epilayer surface is also shown. A similar image of an SiC atomically flat epi surface grown in a Glenn laboratory is given. With the current screw defect density of commercial wafers (about 5000 defects/cm2), the yield of atomically free 0.1 by 0.l mm mesas is expected to be about 90 percent. This is large enough for many types of electronic and optical devices. The implementation of this new technology was recently published in Applied Physics Letters. This work was initially carried out in-house under a Director's Discretionary Fund project and is currently being further developed under the Information Technology Base Program.
A new solar-cell structure utilizes a single, ultra-wide well of either gallium arsenide (GaAs) or indium-gallium-phosphide (InGaP) in the depletion region of a wide bandgap matrix, instead of the usual multiple quantum well layers. These InGaP barrier layers are effective at reducing diode dark current, and photogenerated carrier escape is maximized by the proper design of the electric field and barrier profile. With the new material, open-circuit voltage enhancements of 40 and 100 mV (versus PIN control systems) are possible without any degradation in short-circuit current. Basic tenets of quantum-well and quantum- dot solar cells are utilized, but instead of using multiple thin layers, a single wide well works better. InGaP is used as a barrier material, which increases open current, while simultaneously lowering dark current, reducing both hole diffusion from the base, and space charge recombination within the depletion region. Both the built-in field and the barrier profile are tailored to enhance thermionic emissions, which maximizes the photocurrent at forward bias, with a demonstrated voltage increase. An InGaP heterojunction barrier solar cell consists of a single, ultra-wide GaAs, aluminum-gallium-arsenide (AlGaAs), or lower-energy-gap InGaP absorber well placed within the depletion region of an otherwise wide bandgap PIN diode. Photogenerated electron collection is unencumbered in this structure. InGaAs wells can be added to the thick GaAs absorber layer to capture lower-energy photons.
Line-mixing effects have been observed in the infrared Q branch of the (11/1/0,03/1/0)I-00/0/0 band of CO2 at 2076/cm. A tunable diode laser spectrometer was used to record spectra of CO2 broadened by N2 and O2 at total pressures ranging from 100 to 720 torr. The observed absorption coefficients are up to 65 percent lower than those calculated using an isolated Lorentzian line approximation. A simple energy gap scaling law is used to determine the off-diagonal relaxation matrix elements from the known pressure-broadening coefficients. The spectra calculated using these matrix elements reproduces the observed absorption coefficients to within several percent.
The efficiency of thermionic energy converters is improved by internal distribution of tiny sorted cesium diodes driven by the thermal gradient between the primary emitter and the collector. The tiny, sorted diode distribution comprises protrusions of the emitter material from the main emitter face which contact the main collector face thermally but not electrically. The main collector ends of the protrusions are separated from the main collector by a thin layer of insulation, such as aluminum oxide. The shorted tiny diode distribution augments cesium ionization through internal thermal effects only within the main diode. No electrical inputs are required. This ionization enhancement by the distribution of the tiny shorted diodes not only reduces the plasma voltage drop but also increases the power output and efficiency of the overall thermionic energy converter.
Heavy ion-, focused X ray-, and pulsed laser induced single event effects in an epitaxial silicon diode were simulated using Sentaurus Technology Computer Aided Design (TCAD). The variation of the potential with time in simulation agrees with previous experimental data, which suggests that the different radiation sources result in different amounts of potential modulation. The charge generation spatial profile strongly affects the potential modulation. The longitudinal range and starting location of generated charge most strongly impacts the amount of potential modulation, while the radial width has a slight effect, and the temporal duration of charge injection has negligible impact on potential modulation
The effect of power/temperature step stress when applied to the switching diode JANTX1N5554 manufactured by Semtech and Micro Semiconductor was evaluated. A total of 48 samples from each manufacturer were submitted to the process outlined. In addition, two control sample units were maintained for verification of the electrical parametric testing.