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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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The effects of proton displacement damage on light-emitting diodes and laser diodes are discussed, comparing the radiation sensitivity of current technology devices with older devices for which data exists in the literature.
Electron diode characteristics including effect of collisions calculated by Monte Carlo method
The effect of diode laser characteristics on the overall performance capabilities of coherent communication systems is discussed. In particular, attention is given to optical performance issues for diode lasers in coherent systems, measurements of key performance parameters, and optical requirements for coherent single-channel and multichannel communication systems. The discussion also covers limitations imposed by diode laser optical performance on multichannel system capabilities and implications for future developments.
Cs plasma thermionic diode, using Penning effect for ionization rate increase via Hg or Cd seeding
Cobalt 60 gamma radiation effect on MOS diodes fabricated on silicon substrates, noting surface state and oxide charge densities
Low voltage arc and breakdown effects in xenon filled thermionic diodes
Design handbook for steady state radiation effects on semiconductor diodes
A tunable diode laser absorption spectrometer with resolution of about 0.0001/cm was used to record air-broadened spectra of CC12F2 in two regions near 922.8/cm and 921.7/cm. In the 922.8/cm region the structure shows good intensity contrast at pressures corresponding to upper atmospheric pressures. The absorption features have a spacing of 0.014/cm, which is sufficiently wide to retain spectral structure at pressures as high as 48 torr or altitudes as low as 19 km. The apparent broadening is 2 MHz/torr. The single-line broadening coefficient for CC12F2 can be estimated to be 8 + or - 2 MHz/torr FWHM. In the 921.7/cm region the high-resolution structure is discernible up to 24 torr, but the intensity contrast is not sufficiently strong to be of use in analysis of stratospheric spectra.
Abstract Although the effect of resonant tunneling in metal-double-insulator-metal (MI 2 M) diodes has been predicted for over two decades, no experimental demonstrations have been reported at the low voltages needed for energy harvesting rectenna applications. Using quantum-well engineering, we demonstrate the effects of resonant tunneling in a Ni/NiO/Al 2 O 3 /Cr/Au MI 2 M structures and achieve the usually mutually exclusive desired characteristics of low resistance ( $${R}_{0}^{DC} \sim$$ R 0 D C ~ 13 kΩ for 0.035 μm 2 ) and high responsivity ( β 0 = 0.5 A W −1 ) simultaneously. By varying the thickness of insulators to modify the depth and width of the MI 2 M quantum well, we show that resonant quasi-bound states can be reached at near zero-bias, where diodes self-bias when driven by antennas illuminated at 30 THz. We present an improvement in energy conversion efficiency by more than a factor of 100 over the current state-of-the-art, offering the possibility of engineering efficient energy harvesting rectennas.
A user oriented computer program for analyzing microwave and millimeter wave mixers with a single Schottky barrier diode of known I-V and C-V characteristics is described. The program first performs a nonlinear analysis to determine the diode conductance and capacitance waveforms produced by the local oscillator. A small signal linear analysis is then used to find the conversion loss, port impedances, and input noise temperature of the mixer. Thermal noise from the series resistance of the diode and shot noise from the periodically pumped current in the diode conductance are considered. The effects of the series inductance and diode capacitance on the performance of some simple mixer circuits using a conventional Schottky diode, a Schottky diode in which there is no capacitance variation, and a Mott diode are studied. It is shown that the parametric effects of the voltage dependent capacitance of a conventional Schottky diode may be either detrimental or beneficial depending on the diode and circuit parameters.
We have observed enhanced bistability (hysteresis) in the current-voltage characteristics of gamma irradiated resonant tunneling diodes. This bistability occurs in the negative differential conductance region for voltages larger than 1.1 V. We discuss possible mechanisms for the observed phenomena and also discuss the measurements sensitivity to the external circuit.
Increasing the effective Schottky-barrier height of epitaxial CoSi2/Si(111) diodes by the use of thin, highly doped Si layers in close proximity to the metal-semiconductor interface has been studied. Intrinsic Si, Si doped by coevaporation of Ga, and epitaxial CoSi2 layers have all been grown in the same molecular-beam epitaxy system. Current-voltage and photoresponse characterization yield barrier heights ranging from 0.61 eV for a sample with no p(+) layer to 0.89 eV for a sample with a 20-nm-thick p(+) layer. These results are compared to theoretical values based on a one-dimensional solution of Poisson's equation under the depletion approximation.
Description of certain effects related to the width of the intrinsic region produced in a silicon p-i-n diode by lithium ion drifting. It is found that for wider intrinsic regions at large forward biases there is a larger ohmic drop across the region and a correspondingly smaller current. Moreover, the recovery time decreases with increasing intrinsic region width. Conversely, the decay phase time increases with increasing intrinsic region width and with increasing current levels.
Consistent field Monte Carlo method calculation for collision effect on electron-ion diode characteristics and for hard sphere electron- neutral collision effect for monoenergetic- thermionic emission
Report describes effects of power and temperature overstress on Motorola and Siemens diodes. Failure was predominantly due to melted metal on die connections. Other failures are described.
Report describes effects of power and temperature overstress on Semtech and Micro Semiconductor diodes. Semtech devices failed with excessive reverse bias leakage due to external paint. Micro Semiconductor diodes had reverse bias leakage failure due to damaged silicon.
Light fields with spatially varying backgrounds can modulate cosmic preheating, and imprint the nonlinear effects of preheating dynamics at tiny scales on large scale fluctuations. This provides us a unique probe into the preheating era which we dub the “cosmic microscope”. We identify a distinctive effect of preheating on scalar perturbations that turns the Gaussian primordial fluctuations of a light scalar field into square waves, like a diode. The effect manifests itself as local non-Gaussianity. We present a model, “modulated partial preheating”, where this nonlinear effect is consistent with current observations and can be reached by near future cosmic probes.