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At least 73 records · Page 4

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DOE OSTI2023

Cool carriers: triplet diffusion dominates upconversion yield

Perovskites have gained popularity both as the active material in photovoltaics and as bulk triplet sensitizers for solid-state triplet–triplet annihilation upconversion (TTA-UC). Prior to widespread implementation into commercial photovoltaics, an in-depth understanding of the environmental influences on device performance is required. To this point, the temperature-dependent structure–function properties of TTA-UC within methylammonium formamidinium lead triiodide (MAFA)/rubrene UC devices are explored. A strong temperature dependence of the underlying UC dynamics is observed, where the maximum UC efficiency is achieved at 170 K, reflecting the competition between triplet diffusion length, diffusion rate, and triplet–triplet encounter events. Furthermore, a combination of spectroscopic and structural methods and theoretical modelling illustrates that despite the significantly increased carrier lifetime of the perovskite at low temperatures, the TTA-UC dynamics are not governed by the underlying sensitizer properties but rather limited by the underlying triplet diffusion.

Sullivan, Colette M.↗

NASA NTRS1974

Surface photovoltage method extended to silicon solar cell junction

The conventional surface photovoltage (SPV) method is extended to the measurement of the minority carrier diffusion length in diffused semiconductor junctions of the type used in a silicon solar cell. The minority carrier diffusion values obtained by the SPV method agree well with those obtained by the X-ray method. Agreement within experimental error is also obtained between the minority carrier diffusion lengths in solar cell diffusion junctions and in the same materials with n-regions removed by etching, when the SPV method was used in the measurements.

Wang, E. Y.↗

DOE OSTI2022

Creating Functional Oxynitride–Silicon Interfaces and SrNbO 2 N Thin Films for Photoelectrochemical Applications

Photoelectrochemical performance dependence upon absorption length, carrier diffusion length, and surface area of an oxynitride photoabsorber is investigated. How best to fabricate optical-quality thin films of bandgap-tunable oxynitrides is also discussed. We targeted the stoichiometric compound SrNbO 2 N as an optimal wide-bandgap photoabsorber (1.9 eV) for use with silicon (1.1 eV) in a tandem structure photoelectrochemical cell. Preparation of perovskite oxynitrides at high-temperature as isolated powders is often straightforward, but it is difficult to integrate them as thin films in tandem junction devices with low-temperature materials. Here we develop the first method to prepare optical-quality SrNbO 2 N thin-films of tunable thickness and roughness on single-crystal silicon substrate. This achievement required an interfacial layer of ultra-thin TaN to be used as a barrier to reduce the inter-diffusion of silicon and oxygen during oxynitride syn-thesis. We produced a variety of SrNbO 2 N film thicknesses (20-440 nm) on n + -Si(100) surfaces. Roughness factor (0.14-21) scaled with thickness. The intrinsic photoelectrochemical activity of these devices was evaluated using a low-barrier sacrificial electron donor. Photocurrent density and photovoltage revealed a significant (and non-linear) dependence on film thickness and roughness. Furthermore, absorption length, carrier diffusion length, and surface area were each found to play key roles. Balancing these is required for optimally performing devices.

08 HYDROGEN↗

DOE OSTI2021

Does inhomogeneous big bang nucleosynthesis produce an inhomogeneous element distribution today?

Inhomogeneous big bang nucleosynthesis (BBN) produces a spatially inhomogeneous distribution of element abundances at $T \sim 10^9$ K , but subsequent element diffusion will tend to erase these inhomogeneities. In this work, we calculate the cosmological comoving diffusion length for the BBN elements. This diffusion length is limited by atomic scattering and is therefore dominated by diffusion when the atoms are neutral, between the redshifts of recombination and reionization. We find that the comoving diffusion length today is $d_{\text{com}} ≈ 70$ pc for all of the elements of interest except 7 Li , for which $d_{\text{com}}$ is an order of magnitude smaller because 7 Li remains ionized throughout the relevant epoch. This comoving diffusion length corresponds to a substellar baryonic mass scale and is roughly equal to the horizon scale at BBN. These results lend support to the possibility that inhomogeneities on scales larger than the horizon at BBN could lead to a spatially inhomogeneous distribution of elements today, while purely subhorizon fluctuations at BBN can result only in a homogeneous element distribution at present.

79 ASTRONOMY AND ASTROPHYSICS↗

NASA NTRS1971

Damage and recovery characteristics of lithium-containing solar cells.

Damage and recovery characteristics were measured on lithium-containing solar cells irradiated by 1-MeV electrons. Empirical expressions for cell recovery time, diffusion-length damage coefficient immediately after irradiation, and diffusion-length damage coefficient after recovery were derived using results of short-circuit current, diffusion-length, and reverse-bias capacitance measurements. The damage coefficients were expressed in terms of a single lithium density parameter, the lithium gradient. A fluence dependence was also established, this dependence being the same for both the immediate-post-irradiation and post-recovery cases. Cell recovery rates were found to increase linearly with lithium gradient.

Faith, T. J.↗

NASA NTRS1972

Junction characteristics of silicon solar cells. Part 1: Nonilluminated case

Precise values of the reverse saturation currents in silicon solar cells and magnitudes of the diffusion and recombination components have been obtained. The recombination current as well as leakage current due to shunting are shown to be nonuniform across the cell. The diffusion lengths calculated from the diffusion current components agree well with diffusion lengths measured independently in similar material. Models are given demonstrating the effect of recombination and shunting currents on the dark current-voltage characteristics of solar cells.

Stirn, R. J.↗

NASA NTRS1978

Effect of design changes on aerodynamic and acoustic performance of translating-centerbody sonic inlets

An experimental investigation was conducted to determine the effect of design changes on the aerodynamic and acoustic performance of translating centerbody sonic inlets. Scale model inlets were tested in the Lewis Research Center's V/STOL wind tunnel. The effects of centerbody position, entry lip contraction ratio, diffuser length, and diffuser area ratio on inlet total pressure recovery, distortion, and noise suppression were investigated at static conditions and at forward velocity and angle of attack. With the centerbody in the takeoff position (retracted), good aerodynamic and acoustic performance was attained at static conditions and at forward velocity. At 0 deg incidence angle with a sound pressure level reduction of 20 dB, the total pressure recovery was 0.986. Pressure recovery at 50 deg was 0.981. With the centerbody in the approach position (extended), diffuser flow separation occurred at an incidence angle of approximately 20 deg. However, good performance was attained at lower angles. With the centerbody in the takeoff position the ability of the inlet to tolerate high incidence angles was improved by increasing the lip contraction ratio. However, at static conditions with the centerbody in the approach position, an optimum lip contraction ratio appears to exist, with both thinner and thicker lips yielding reduced performance.

Miller, B. A.↗

NASA NTRS1979

Some tests on small-scale rectangular throat ejector

A small scale rectangular throat ejector with plane slot nozzles and a fixed throat area was tested to determine the effects of diffuser sidewall length, diffuser area ratio, and sidewall nozzle position on thrust and mass augmentation. The thrust augmentation ratio varied from approximately 0.9 to 1.1. Although the ejector did not have good thrust augmentation performance, the effects of the parameters studied are believed to indicate probable trends in thrust augmenting ejectors.

Dean, W. N., Jr.↗

NASA NTRS1978

Response of defects to illumination in silicon solar cells

The enhancement of diffusion length with intensity was examined using spectral response measurements in solar cells based on Silso silicon and EFG silicon ribbon. Local diffusion length variations at defect sites were investigated as a function of illumination level using a scanning electron microscope operated in the electron beam induced current mode. An increase of diffusion length was observed at defect sites as the intensity level was increased. The diffusion length improvements are explained on the basis of saturation of minority carrier traps in these materials. The trap distribution in Silso silicon is shown to be peaked near (Ec - 0.7)eV. EFG silicon ribbon shows a broad, Gaussian distribution of traps located near (Ec - 0.5)eV.

Hari Rao, C. V.↗

DOE OSTI2025

Probing exciton diffusion dynamics in photosynthetic supercomplexes via exciton–exciton annihilation

Photosynthesis converts solar energy into chemical energy through coordinated energy transfer between light-harvesting complexes and reaction centers (RCs). Understanding exciton motion, particularly the exciton diffusion length, is essential for optimizing energy efficiency in photosystems. In this work, we combine intensity-cycling transient absorption spectroscopy with kinetic Monte Carlo (kMC) simulation to investigate exciton motion in the C2S2 photosystem II supercomplex of spinach. Using exciton–exciton annihilation, revealed in the fifth-order response, we experimentally estimate an exciton diffusion length of 10.9 nm based on a 3D normal diffusion model, suggesting the ability of excitons to traverse the supercomplex. However, kMC simulations reveal that exciton motion is sub-diffusive because of spatial constraints and the strong RC traps. An anomalous diffusion model analysis of the experimental data yields a diffusion length of 9.7 nm, while the simulated diffusion length is 7.4 nm. The variable exciton residence time across subunits, partly influenced by their connectivity to the trap, indicates inhomogeneous annihilation probability and suggests how plants balance efficient light harvesting with photoprotection. We also explore the influence of specific assumptions in the annihilation simulation, which are challenging to access in more complex environments, such as the thylakoid membrane. Our study provides a framework for studying exciton dynamics using exciton–exciton annihilation, which can be extended to understand the light-harvesting efficiencies of larger, more complex photosynthetic assemblies.

Zhang, Kunyan (ORCID:000000026830409X)↗

NASA NTRS1981

Determination of lifetimes and recombination currents in p-n junction solar cells, diodes, and transistors

New methods are presented and illustrated that enable the accurate determination of the diffusion length of minority carriers in the narrow regions of a solar cell or a diode. Other methods now available are inaccurate for the desired case in which the width of the region is less than the diffusion length. Once the diffusion length is determined by the new methods, this result can be combined with measured dark I-V characteristics and with small-signal admittance characteristics to enable determination of the recombination currents in each quasi-neutral region of the cell - for example, in the emitter, low-doped base, and high-doped base regions of the BSF (back-surface-field) cell. This approach leads to values for the effective surface recombination velocity of the high-low junction forming the back-surface field of BSF cells or the high-low emitter junction of HLE cells. These methods are also applicable for measuring the minority-carrier lifetime in thin epitaxial layers grown on substrates with opposite conductivity type.

Neugroschel, A.↗

NASA NTRS1982

Reduction of solar cell efficiency by edge defects across the back-surface-field junction - A developed perimeter model

Material imperfections, impurity clusters and fabrication defects across the back-surface-field junction can degrade the performance of high-efficiency solar cells. The degradation from defects appearing on the circumference of a solar cell is analyzed using a two-region developed perimeter device model. The width of the defective perimeter region is characterized by the range or the distance-of-influence of the defective edge and this width is about two diffusion lengths. The defective edge is characterized by a surface recombination velocity. Family of theoretical curves and numerical examples are presented to show that significant reduction of open-circuit voltage can occur in high-efficiency cells which are thin compared with the diffusion length. In one example, the degradation is decreased from 135 mV to 75 mV when the cell size is increased from 10 to 100 times the diffusion length in a thin cell whose thickness is 1% of the diffusion length.

Sah, C. T.↗

DOE OSTI2021

Improvement of Front-Junction GaInP by Point-Defect Injection and Annealing

Traditional front junction GaInP solar cells are radiation tolerant and can have good diffusion length, but have limited voltage and thus efficiency. Here, we investigate the impact of annealing on GaInP device performance. First, Zn-doped GaInP/AlGaInP double heterojunction structures are studied in order to investigate the impact of annealing in a simple structure. While standard anneals lower diffusion length and lifetime, annealing after injecting point-defects improves material quality, presumably by eliminating sources of non-radiative recombination. Atomic ordering is reduced by the anneal, which raises the device bandgap and requires consideration. These results can be used to improve front junction device performance while controlling the bandgap. Then, GaInP front-junction devices are created using anneals with and without point-defect injection. Voc and EQE trends follow the diffusion length and lifetime trends from the DH structures. Baseline devices have Woc of 0.484 V, raising to 0.504 V after a high temperature anneal. However, injecting point defects prior to the anneal results in a front junction device with Woc of 0.405 V and a diffusion length greater than 8 micrometers. Optimized front-junction GaInP devices with an ARC have ~20% efficiency without a rear reflector.

anneal↗

DOE OSTI2021

Improvement of Front-Junction GaInP by Point-Defect Injection and Annealing: Preprint

anneal↗

NASA NTRS1986

Simulations of high Mach number perpendicular shocks with resistive electrons

A simulation code which models the ions as microparticles and the electrons as a resistive massless fluid is employed to study the structure of high Mach number perpendicular shocks. It is found that stable stationary shock solutions can be obtained for Alfven Mach numbers (M sub A) between 5 and 60 for upstream plasmas where the ratio of the plasma pressure to the magnetic pressure is 1, providing that the upstream resistive diffusion length is much smaller than the ion inertial length. For much larger resistive diffusion lengths, the magnetic field overshoot is damped, and the imbalance in the electron momentum equation results in a periodic fluctuation of the fraction of reflected ions. In the limit of M sub A of less than 10, the magnetic overshoot and the fraction of reflected ions increase with increasing M sub A, while at higher Mach numbers the fraction of reflected ions peaks at about 40 percent and the magnetic field overshoot increases at a much slower rate. Electron inertial effects are also considered.

Quest, K. B.↗

DOE OSTI2020

Long-Range Exciton Diffusion in Two-Dimensional Assemblies of Cesium Lead Bromide Perovskite Nanocrystals

Förster resonant energy transfer (FRET)-mediated exciton diffusion through artificial nanoscale building block assemblies could be used as an optoelectronic design element to transport energy. However, so far, nanocrystal (NC) systems supported only diffusion lengths of 30 nm, which are too small to be useful in devices. In this work, we demonstrate a FRET-mediated exciton diffusion length of 200 nm with 0.5 cm 2 /s diffusivity through an ordered, two-dimensional assembly of cesium lead bromide perovskite nanocrystals (CsPbBr 3 PNCs). Exciton diffusion was directly measured via steady-state and time-resolved photoluminescence (PL) microscopy, with physical modeling providing deeper insight into the transport process. This exceptionally efficient exciton transport is facilitated by PNCs' high PL quantum yield, large absorption cross section, and high polarizability, together with minimal energetic and geometric disorder of the assembly. This FRET-mediated exciton diffusion length matches perovskites' optical absorption depth, thus enabling the design of device architectures with improved performances and providing insight into the high conversion efficiencies of PNC-based optoelectronic devices.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

NASA NTRS1981

Projected performance of III-V epitaxial multijunction solar cells in space

The monolithic epitaxial multijunction stack, to be fabricated from III-V quaternary alloys, has been analyzed for use in space with a detailed computer model. AlGaInAs and AlGaAsSb three-junction cells, each having an AlAsSb window, were modeled as functions of temperature, concentration, minority carrier diffusion length, etc., as were AlGaAs/GaAs and AlGaAsSb/InP two-junction cells. Cell efficiencies for one expected operating point in space (50 suns, 125 C) were around 20% for the two-junction cells and around 23-24% for the three-junction cells, using projected minority carrier diffusion lengths of 1.5 microns. Longer diffusion lengths in the III-V alloys (approaching those of GaAs) would allow the three-junction cells to reach 30% efficiency, if such conditions as 100 suns, 50 C can be achieved. The major technological challenges facing the high-efficiency multijunction cell are summarized and discussed in light of the modeling results.

Maloney, T. J.↗

DOE OSTI2022

All-perovskite tandem solar cells with improved grain surface passivation

All-perovskite tandem solar cells hold the promise of surpassing the efficiency limits of single-junction solar cells; however, until now, the best-performing all-perovskite tandem solar cells have exhibited lower certified efficiency than have single-junction perovskite solar cells. A thick mixed Pb–Sn narrow-bandgap subcell is needed to achieve high photocurrent density in tandem solar cells, yet this is challenging owing to the short carrier diffusion length within Pb–Sn perovskites. Here we develop ammonium-cation-passivated Pb–Sn perovskites with long diffusion lengths, enabling subcells that have an absorber thickness of approximately 1.2 μm. Molecular dynamics simulations indicate that widely used phenethylammonium cations are only partially adsorbed on the surface defective sites at perovskite crystallization temperatures. The passivator adsorption is predicted to be enhanced using 4-trifluoromethyl-phenylammonium (CF3-PA), which exhibits a stronger perovskite surface-passivator interaction than does phenethylammonium. By adding a small amount of CF3-PA into the precursor solution, we increase the carrier diffusion length within Pb–Sn perovskites twofold, to over 5 μm, and increase the efficiency of Pb–Sn perovskite solar cells to over 22%. Here, we report a certified efficiency of 26.4% in all-perovskite tandem solar cells, which exceeds that of the best-performing single-junction perovskite solar cells. Encapsulated tandem devices retain more than 90% of their initial performance after 600 h of operation at the maximum power point under 1 Sun illumination in ambient conditions.

14 SOLAR ENERGY↗