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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 73 records · Page 4
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Pool boiling heat transfer evaluation of next-generation dielectric fluid: Opteon™ 2P50

The growing use of artificial intelligence has led to heavy thermal loads and high heat dissipation rates in data centers. Conventional air-cooled technologies are not able to fulfill these requirements. To overcome these challenges, two-phase immersion cooling (2PIC) has emerged as one of the leading technologies for high power-density chips. 2PIC increases the heat dissipation rate and efficiency of the system while reducing the footprint of the cooling equipment. A fluid with adequate dielectric properties, a suitable normal boiling temperature to maintain chip temperatures, and good material compatibility, is desired for 2PIC system. In this study, the pool boiling heat transfer of a new developmental dielectric fluid, Opteon™ 2P50, was experimentally investigated. The heat transfer coefficients at various heat fluxes (20–150 kW/m 2 ) and the critical heat flux were measured using a smooth aluminum surface. Compared with HFE-7100, Opteon™ 2P50 shows higher heat transfer coefficient (up to 59% higher) and a slightly lower value of critical heat flux (around 5.9% lower). The modified Cooper correlation with the optimized leading constant resulted in reliable prediction accuracy with a 5.3% mean absolute error percentage. Overall, these results indicate that the new dielectric fluid provides similar thermal performance to some legacy fluids.

2P50↗
DOE OSTI2022

Nonlinear dielectric relaxation of polar liquids

Molecular dynamics of two water models, SPC/E and TIP3P, at a number of temperatures are used to test the Kivelson-Madden equation connecting single-particle and collective dielectric relaxation times through the Kirkwood factor. The relation is confirmed by simulations and used to estimate the nonlinear effect of the electric field on the dielectric relaxation time. We show that the main effect of the field comes through slowing down of the single-particle rotational dynamics and the relative contribution of the field-induced alteration of the Kirkwood factor is insignificant for water. Theories of nonlinear dielectric relaxation need to mostly account for the effect of the field on rotations of a single dipole in a polar liquid.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

2-Aminoanthracene Crystallization in Its Compatible Polystyrene Block: RAFT Synthesis and Enhanced Charge Retention in Pentacene Transistor Gate Dielectrics

We synthesized polystyrene-block-polyanthrylaminomethylstyrene (PS-b-PAAS) via RAFT reaction and side chain modification where the PAAS block is 50%. By blending 2-aminoanthracene (2AA) with PS-b-PAAS, the co-aggregation behavior of the PAAS block and 2AA within the thin film was observed by optical microscopy (OM) and x-ray diffraction. At 5 and 10 wt% of 2AA within the thin film, OM results showed a clear morphological difference between PS matrix and PS-b-PAAS matrix. Differences in the 2AA excited state lifetime in these matrices were also established using transient absorption spectroscopy (TAS). Blends were used as gate dielectrics in pentacene transistors. We compared characteristic voltage (Vc, an indicator of threshold voltage) before and after charging of PS-b-PAAS blended with unsubstituted PS and both polymers individually blended with 2AA. For blended PS-b-PAAS and PS, as the concentration of PS-b-PAAS increases, the decreased Vc especially with negative charging of the pentacene indicated a larger concentration of charge carriers induced by the dielectric film. The charging experiments also revealed that the unique structure formed by the 2AA/PS-b-PAAS blend significantly affected the charge storage capability of the organic field-effect transistors (OFET). Furthermore, this work demonstrates the novel co-aggregation structure in the dielectrics, and furthermore its impact on charge storage capability in pentacene OFETs.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Controlled Dielectric Breakdown to Form Pinhole Passivating Contacts

This contribution explores an alternate route to forming pinhole-based poly-Si/dielectric/c-Si passivating contacts. The method utilizes controlled dielectric breakdown or electroforming to produce nanoscale pinholes in a thick (non-tunnelling) dielectric which, when annealed, allows dopant atoms to pass from doped poly-Si through the pinholes and into the c-Si wafer, forming conductive pathways. We show that the pinholes lose passivation after electroforming but can be repassivated with a forming gas anneal. N-type contacts show contact resistivities of ~20 mOhm-cm2, but p-type contacts are ~100 mOhm-cm2. Devices show a distinct kink in the J-V curve indicative of a barrier to transport. The method can be expanded to optimized dielectric passivation stacks (not just thin, single layers) and can be formed in parallel over the faces of the wafer in selected areas (pinholes only under the grid lines).

CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SU↗
DOE OSTI2024

Electric fields near undulating dielectric membranes

Dielectric interfaces are crucial to the behavior of charged membranes, from graphene to synthetic and biological lipid bilayers. Understanding electrolyte behavior near these interfaces remains a challenge, especially in the case of rough dielectric surfaces. A lack of analytical solutions consigns this problem to numerical treatments. Here, we report an analytic method for determining electrostatic potentials near curved dielectric membranes in a two-dimensional periodic “slab” geometry using a periodic summation of Green’s functions. This method is amenable to simulating arbitrary groups of charges near surfaces with two-dimensional deformations. We concentrate on one-dimensional undulations. We show that increasing membrane undulation increases the asymmetry of interfacial charge distributions due to preferential ionic repulsion from troughs. In the limit of thick membranes, we recover results mimicking those for electrolytes near a single interface. Our work demonstrates that rough surfaces generate charge patterns in electrolytes of charged molecules or mixed-valence ions.

Chemistry↗
DOE OSTI2024

Probing electronic and dielectric properties of ultrathin Ga 2 O 3 /Al 2 O 3 atomic layer stacks made with in vacuo atomic layer deposition

Ultrathin (1–4 nm) films of wide-bandgap semiconductors are important to many applications in microelectronics, and the film properties can be sensitively affected by defects especially at the substrate/film interface. Motivated by this, an in vacuo atomic layer deposition (ALD) was developed for the synthesis of ultrathin films of Ga 2 O 3 /Al 2 O 3 atomic layer stacks (ALSs) on Al electrodes. It is found that the Ga 2 O 3 /Al 2 O 3 ALS can form an interface with the Al electrode with negligible interfacial defects under the optimal ALD condition whether the starting atomic layer is Ga 2 O 3 or Al 2 O 3 . Such an interface is the key to achieving an optimal and tunable electronic structure and dielectric properties in Ga 2 O 3 /Al 2 O 3 ALS ultrathin films. In situ scanning tunneling spectroscopy confirms that the electronic structure of Ga 2 O 3 /Al 2 O 3 ALS can have tunable bandgaps (E g ) between ~2.0 eV for 100% Ga 2 O 3 and ~3.4 eV for 100% Al 2 O 3 . With variable ratios of Ga:Al, the measured E g exhibits significant non-linearity, agreeing with the density functional theory simulation, and tunable carrier concentration. Furthermore, the dielectric constant of ultrathin Ga 2 O 3 /Al 2 O 3 ALS capacitors is tunable through the variation in the ratio of the constituent Ga 2 O 3 and Al 2 O 3 atomic layer numbers from 9.83 for 100% Ga 2 O 3 to 8.28 for 100% Al 2 O 3 . The high ε leads to excellent effective oxide thickness ~1.7–2.1 nm for the ultrathin Ga 2 O 3 /Al 2 O 3 ALS, which is comparable to that of high-K dielectric materials.

36 MATERIALS SCIENCE↗
DOE OSTI2023

End block dynamics in unentangled polymers by dielectric spectroscopy

Dielectric spectroscopy measures the dynamics of polymer melts over a broad frequency range. Developing a theory for the spectral shape can extend the analysis of dielectric spectra beyond determining relaxation times from the peak maxima and adds physical meaning to shape parameters determined with empirical fit functions. Toward this goal, we use the experimental results on unentangled poly(isoprene), and unentangled poly(butylene oxide), polymer melts, to test whether the concept of end blocks could be one reason for the Rouse model deviating from experimental data. These end blocks have been suggested by simulations and neutron spin echo spectroscopy and are a consequence of the monomeric friction coefficient depending on the position of the bead in the chain. The concept of an end block is an approximation which partitions the chain in a middle and two end blocks to avoid overparameterization by a continuous position dependent change of the friction parameter. Analysis of dielectric spectra shows that the deviations of the calculated from the experimental normal mode cannot be related to the end block relaxation. However, the results do not contradict an end block hiding below the segmental relaxation peak. Finally, it seems that the results are compatible with an end block being the specific part of the sub-Rouse chain interpretation close to the chain ends.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Computational prediction of dielectric breakdown strength of a transformer paper in oil with uncertainty quantification

The determination of the dielectric breakdown strengths of microstructurally heterogeneous materials has been a primarily experimental endeavor. We report the development of a microstructure-level model for computationally predicting the breakdown strength and analyzing the interactions between electromagnetic pulses (EMP) and the constituents in a composite of cellulose-based paper and mineral oil found in electrical transformers. The model allows explicit simulation of the material breakdown process by tracking the transition of dielectric constituents from non-conductive to conductive states. The focus is on the electric fields induced in the materials and the overall conditions for dielectric breakdown (defined as the onset of avalanche) caused by the electric field induced in the composite. Responses to three distinct pulse shapes, i.e., Steep Front (SF), Lightning (L), and AC with spectra spanning 60–9 × 105 Hz are considered. It is found that the breakdown strength of the material is significantly affected by microstructure heterogeneities, the spatial variations of the constituent properties, and the pulse shapes. A probabilistic characterization of the breakdown strength is computationally obtained and compared with experimental measurements. Although one particular material is analyzed, the model and approach are applicable to other heterogeneous materials as well.

breakdowns↗
DOE OSTI2023

The Role of Optical Phonon Confinement in the Infrared Dielectric Response of III–V Superlattices

Polar dielectrics are key materials of interest for infrared (IR) nanophotonic applications due to their ability to host phonon-polaritons that allow for low-loss, subdiffractional control of light. The properties of phonon-polaritons are limited by the characteristics of optical phonons, which are nominally fixed for most “bulk” materials. Superlattices composed of alternating atomically thin materials offer control over crystal anisotropy through changes in composition, optical phonon confinement, and the emergence of new modes. In particular, the modified optical phonons in superlattices offer the potential for so-called crystalline hybrids whose IR properties cannot be described as a simple mixture of the bulk constituents. To date, however, studies have primarily focused on identifying the presence of new or modified optical phonon modes rather than assessing their impact on the IR response. Here, this study focuses on assessing the impact of confined optical phonon modes on the hybrid IR dielectric function in superlattices of GaSb and AlSb. Using a combination of first principles theory, Raman, FTIR, and spectroscopic ellipsometry, the hybrid dielectric function is found to track the confinement of optical phonons, leading to optical phonon spectral shifts of up to 20 cm -1 . These results provide an alternative pathway toward designer IR optical materials.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Imaging Photonic Resonances within an All‐Dielectric Metasurface via Photoelectron Emission Microscopy

Dielectric metasurfaces, through volume‐type photonic resonances, enable precise control of light‐matter interactions for applications including imaging, holography, and sensing. The application space of dielectric metasurfaces has extended from infrared to visible wavelengths by incorporating high refractive index materials, such as titanium dioxide (TiO 2 ). Understanding the fundamental and fabrication limits for these applications requires metrology with nanoscale resolution, sensitivity to electromagnetic fields within the meta‐atom volume, and far‐field excitation. In this work, photoelectron emission microscopy (PEEM) is used to image field distributions of photonic resonances in a TiO 2 metasurface excited with far‐field, visible‐wavelength illumination. The local volumetric field variations within the meta‐atoms are analyzed as a function of illumination angle and polarization by comparing photoelectron images to finite‐difference time‐domain simulations. This study determines the inelastic mean free path of very low‐energy (<1 eV) photoelectrons to be 35 ± 10 nm, which is comparable to the meta‐atom height thereby highlighting PEEM sensitivity to resonances within the volume. Additionally, the simulations reveal high sensitivity of PEEM images to an in‐plane component of the illumination k ‐vector. These results demonstrate that photoelectron imaging with subwavelength resolution offers unique advantages for examining light‐matter interactions in volume‐type (as opposed to surface) photonic modes within dielectric nanophotonic structures.

electron inelastic mean free path↗
DOE OSTI2023

Highly Flexible Dielectric Films from Solution Processable Covalent Organic Frameworks**

Abstract Covalent organic frameworks (COFs) are known to be a promising class of materials for a wide range of applications, yet their poor solution processability limits their utility in many areas. Here we report a pore engineering method using hydrophilic side chains to improve the processability of hydrazone and β‐ketoenamine‐linked COFs and the production of flexible, crystalline films. Mechanical measurements of the free‐standing COF films of COF‐PEO‐3 (hydrazone‐linked) and TFP‐PEO‐3 (β‐ketoenamine‐linked), revealed a Young's modulus of 391.7 MPa and 1034.7 MPa, respectively. The solubility and excellent mechanical properties enabled the use of these COFs in dielectric devices. Specifically, the TFP‐PEO‐3 film‐based dielectric capacitors display simultaneously high dielectric constant and breakdown strength, resulting in a discharged energy density of 11.22 J cm −3 . This work offers a general approach for producing solution processable COFs and mechanically flexible COF‐based films, which hold great potential for use in energy storage and flexible electronics applications.

Senarathna, Milinda C.↗
DOE OSTI2024

Dielectric and magnetic properties of microwave-absorbing FeAl x O y catalysts fabricated via solution combustion synthesis

Iron-based alumina (FeAl x O y ) nanocomposites are microwave-absorbers and catalysts, which makes them promising for emerging microwave-assisted thermocatalytic technologies. Solution combustion synthesis (SCS) has been used to synthesize FeAl x O y powders, and prior work has demonstrated that adjusting SCS parameters significantly changes phase composition and specific surface area of the products. However, it is unclear how synthesis parameters affect their microwave-absorbing properties, which are essential for optimizing microwave-assisted technologies. To address this challenge, in the present work, twelve different FeAl x O y products were synthesized at different combinations of the SCS parameters such as two fuels (citric acid and glycine), two heating modes (hotplate and muffle furnace), and three Fe:Al molar ratios (2:1, 1:1, 1:2). Dielectric and magnetic properties of the products were characterized using a network analyzer and a vibrating sample magnetometer. Based on the measured permittivity and permeability, penetration depth and reflection loss were calculated as a function of frequency and bed thickness. The products were heated by microwaves at 2.45 GHz and then examined with X-ray diffraction (XRD) analysis. For all products, the magnetic saturation was lower than for bulk iron oxides because of the small crystallite size and aluminum substitution. The use of glycine induced high dielectric losses and enabled fast microwave-heating rates compared to citric acid. Higher Fe:Al ratio also led to higher dielectric and magnetic losses. With glycine fuel, SCS in a furnace induced larger penetration depth and lower microwave absorption than SCS on a hotplate. The minimization of reflected power was more sensitive to the thickness of the product bed than to the frequency of the electromagnetic field. Post-heating XRD analysis revealed different phase transformations in the FeAl x O y powders depending on the SCS parameters. As a result, an FeAl x O y material, synthesized via incipient wetness impregnation, lacked magnetic losses and did not heat well as compared to the SCS products.

Combustion synthesis↗
DOE OSTI2023

Ultrathin quasi-2D amorphous carbon dielectric prepared from solution precursor for nanoelectronics

Abstract Materials keeping thickness in atomic scale but extending primarily in lateral dimensions offer properties attractive for many emerging applications. However, compared to crystalline counterparts, synthesis of atomically thin films in the highly disordered amorphous form, which avoids nonuniformity and defects associated with grain boundaries, is challenging due to their metastable nature. Here we present a scalable and solution-based strategy to prepare large-area, freestanding quasi-2D amorphous carbon nanomembranes with predominant sp 2 bonding and thickness down to 1–2 atomic layers, from coal-derived carbon dots as precursors. These atomically thin amorphous carbon films are mechanically strong with modulus of 400 ± 100 GPa and demonstrate robust dielectric properties with high dielectric strength above 20 MV cm −1 and low leakage current density below 10 −4 A cm −2 through a scaled thickness of three-atomic layers. They can be implemented as solution-deposited ultrathin gate dielectrics in transistors or ion-transport media in memristors, enabling exceptional device performance and spatiotemporal uniformity.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2025

Dielectric constant engineering of nonfullerene acceptors enables a record fill factor of 83.58% and a high efficiency of 20.80% in organic solar cells

Organic solar cells (OSCs) have achieved power conversion efficiencies (PCEs) surpassing 20%, but their development remains hindered by the inherently low dielectric constant (εr) of organic semiconductors, which limits charge transport and contributes to serious recombination losses. Herein, we present a comprehensive strategy to overcome the challenge by engineering the dielectric properties of nonfullerene acceptors (NFAs). Two Y-series NFAs of BTP-N3F and BTP-C3F have been synthesized featuring trifluoromethyl (CF 3 ) end-capped alkyl side chains. This molecular design significantly enhances the dipole moment and ε r (up to ∼5.9) when compared to the reference acceptor Y6 (∼3), reducing the exciton binding energy (E b ) and improving charge transport. Furthermore, the incorporation of a high-εr polymer additive, poly(pentafluorostyrene) (PPFS), synergistically improves the active layer morphology and dielectric properties, enabling efficient charge extraction and reduced recombination losses. Devices based on the optimized D18-Cl/BTP-C3F system have achieved a record-high fill factor (FF) of 83.58% and an impressive PCE of 20.80%, setting a new benchmark for OSCs. Finally, our results underscore the pivotal role of ε r in enhancing device performance and establish a versatile pathway for advancing OSC efficiency and stability through molecular and morphological optimization.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Non-local dielectric effects in nanoscience

Here, the physical properties of charges and excitations in nanoscale materials are influenced both by the dielectric properties of the material itself and the surrounding environment. This non-local dielectric effect was first discussed in the context of molecules in solvents over a century ago. In this perspective, we discuss non-local dielectric effects in zero-dimensional, one-dimensional, and two-dimensional nanoscale systems.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2024

Reduced trap state density in AlGaN/GaN HEMTs with low-temperature CVD-grown BN gate dielectric

In this Letter, low-temperature (400 °C) chemical vapor deposition-grown boron nitride (BN) was investigated as the gate dielectric for AlGaN/GaN metal–insulator–semiconductor high electron mobility transistors (MISHEMTs) on a Si substrate. Comprehensive characterizations using x-ray photoelectron spectroscopy, reflection electron energy loss spectroscopy, atomic force microscope, high-resolution transmission electron microscopy, and time-of-flight secondary ion mass spectrometry were conducted to analyze the deposited BN dielectric. Compared with conventional Schottky-gate HEMTs, the MISHEMTs exhibited significantly enhanced performance with 3 orders of magnitude lower reverse gate leakage current, a lower off-state current of 1 × 10−7 mA/mm, a higher on/off current ratio of 108, and lower on-resistance of 5.40 Ω mm. The frequency-dependent conductance measurement was performed to analyze the BN/HEMT interface, unveiling a low interface trap state density (Dit) on the order of 5 × 1011–6 × 1011 cm−2 eV−1. This work shows the effectiveness of low-temperature BN dielectrics and their potential for advancing GaN MISHEMTs toward high-performance power and RF electronics applications.

Physics↗
DOE OSTI2026

Dielectric properties of neutron and proton irradiated polymeric nanocomposite insulation for superconducting magnets of fusion power plants

Studies on radiation-resistant electrical insulation for superconducting magnets of nuclear fusion power plants are discussed. Metal oxide nanoparticle-incorporated organic polymer composite (MONAP) insulation films were manufactured and studied for their dielectric breakdown strength after exposure to neutrons and proton radiation at varying levels. Samples with up to 5 wt% of nanoparticles (NPs) of SiO 2 , MgO, and ZrO 2 were studied. The samples were exposed to radiation of up to 2 × 10 16 neutrons/cm 2 and 200 Mrad of protons. The addition of the nanoparticles improved the radiation resistance of the MONAP, and the performance depended on the type of NPs and the radiation exposure. Dielectric breakdown measurements at 77 K showed little degradation. Enhancement of dielectric strength was observed in some instances.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Toward improved PVDF-BaTiO 3 composite dielectrics: mechanical activation of the filler versus filler content

Abstract Barium titanate (BT) perovskite particles were surface modified by means of mechanical treatment and used as inorganic component in polyvinylidene fluoride (PVDF) based composites. The changes in electrical properties of the composite films with increasing in filler content were followed by dielectric spectroscopy, breakdown strength andD-Emeasurements. A comparison of the properties of the composites prepared with untreated and mechanically activated particles revealed that there is a significant difference in their performances at low filler concentrations (<20 wt%). Introduction of the surface modified ceramic particles into PVDF matrix led to an increase of the dielectric constant without affecting significantly the electrical breakdown strength. In contrast, when as received BT particles were used a filler, both dielectric constants and breakdown strengths of the composite films were lower than the corresponding values observed for the pure PVDF. At higher concentrations, however, the influence of pre-treatment of the filler on the effective electrical properties becomes less significant. The obtained results were discussed in terms of the pronounced crystallization of polarβandγcrystal phases of PVDF in the presence of surface modified BT fillers, which is confirmed by Raman spectroscopy.

Physics↗