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At least 73 records · Page 4

Dielectric breakdown studies of Teflon perfluoroalkoxy at high temperature

Teflon perfluoroalkoxy (PFA) was evaluated for use as a dielectric material in high-temperature high-voltage capacitors for space applications. The properties that were characterized included the dc dielectric strength at temperatures up to 250 C and the permittivity and dielectric loss as a function of frequency, temperature and voltage. To understand the breakdown mechanism taking place at high temperatures, the pre-breakdown discharge and conduction currents, and the dependence of dielectric strength on thickness of the film were determined. Confocal laser microscopy was performed to diagnose for microimperfections within the film structure. The results obtained show a significant decrease in the dielectric strength and an increase in dielectric loss with an increase in temperature, suggesting that impulse thermal breakdown could be a responsible mechanism in PFA film at temperatures above 150 C.

Suthar, J. L.↗

Temperature Dependence of the Microwave Dielectric Behavior of Selected Materials

A very sensitive thermal bath is designed to study the effect of temperature on the microwave dielectric response of a sample of nickel oxide and cobalt oxide. The sample under study is placed in a microwave resonant cavity in the TE(sub 011) mode. The perturbations of the electric field are recorded in terms of the frequency shifts and the width changes of the microwave resonant signal as seen on the oscilloscope. The real and imaginary parts of the dielectric constant are calculated by using the values of the frequency shifts and width changes in the Slater's perturbation equations. The dielectric behavior of nickel oxide and cobalt oxide and also their mixture is studied at a microwave frequency of 9.2 GHz as a function of temperature. A computer program is written to analyze the dielectric constant values at different temperatures. The resonant cavity seems to be very sensitive in studying the dielectric relaxation mechanism in these materials. The dielectric behavior is also analyzed using Debye's equations, and relaxation times for these materials are calculated at microwave frequencies.

Dahiya, Jai N.↗

Preparation and Dielectric Measurements of the Rare Earth Green Phases R2BaCuO(5-x) (R = Y, Sm, Gd, Dy, Ho, Er, Yb)

It has been demonstrated that R2BaCuO(5-x) (R = Y, Sm, Gd, Dy, Ho, Er, Yb) does not undergo significant densification unless the sintering temperatures are near the incongruent melting point or the sintering times are long. Good quality powders of Y2BaCuO(5-x) have been synthesized by using oxide raw materials or precursors such as acetates and nitrates. The acetates- and the nitrates-derived yttrium green phase resulted in finer particle sizes, acceptable dielectric properties and lower melting temperatures than those processed via oxide raw materials. The hot pressing technique has been employed to produce a dense R2BaCuO(5-x) (R=Y,Gd) substrate with satisfactory dielectric properties. Reactivity to reducing conditions, i.e. graphite die, limited the optimization of the properties. A high sensitivity to the annealing atmosphere has been demonstrated in Y2BaCuO,.,,. Oxygen treatment at 950 OC has been shown to improve the dielectric properties while treatment in nitrogen, at the same temperature, degraded desirable properties. A high sensitivity to the annealing atmosphere has been demonstrated in Y2BaCuO(5-x). Oxygen treatment at 950 C has been shown to improve the dielectric properties while treatment in nitrogen, at the same temperature, degraded desirable properties. The dielectric constants of the rare earth green phases R2BaCuO(5-x) were found to be low. Relaxation peaks were detected at low temperatures (T less than 150 K) and at high temperatures (150 less than T greater than 420 K). The dielectric losses and conductivities at 77 K were measured to be in the range of 10(exp -4) and 10(exp -12) (Omega-cm)(exp -1), respectively. Many parameters were found to exhibit dependencies on the rare earth cation sizes.

Gonzalez-Titman, Carlos↗

L-band Dielectric Constant Measurements of Seawater (Oral presentation and SMOS Poster)

This paper describes a resonant cavity technique for the measurement of the dielectric constant of seawater as a function of its salinity. Accurate relationships between salinity and dielectric constant (which determines emissivity) are needed for sensor systems such as SMOS and Aquarius that will monitor salinity from space in the near future. The purpose of the new measurements is to establish the dependence of the dielectric constant of seawater on salinity in contemporary units (e.g. psu) and to take advantage of modern instrumentation to increase the accuracy of these measurements. The measurement device is a brass cylindrical cavity 16cm in diameter and 7cm in height. The seawater is introduced into the cavity through a slender glass tube having an inner diameter of 0.1 mm. By assuming that this small amount of seawater slightly perturbs the internal fields in the cavity, perturbation theory can be employed. A simple formula results relating the real part of the dielectric constant to the change in resonant frequency of the cavity. In a similar manner, the imaginary part of the dielectric constant is related to the change in the cavity s Q. The expected accuracy of the cavity technique is better than 1% for the real part and 1 to 2% for the imaginary part. Presently, measurements of methanol have been made and agree with precision measurements in the literature to within 1% in both real and imaginary parts. Measurements have been made of the dielectric constant of seawater samples from Ocean Scientific in the United Kingdom with salinities of 10, 30, 35 and 38 psu. All measurements were made at room temperature. Plans to make measurements at a range of temperatures and salinities will be discussed.

Lang, Roger H.↗

Dielectric constant of liquid alkanes and hydrocarbon mixtures

The complex dielectric constants of n-alkanes with two to seven carbon atoms have been measured. The measurements were conducted using a slotted-line technique at 1.2 GHz and at atmospheric pressure. The temperature was varied from the melting point to the boiling point of the respective alkanes. The real part of the dielectric constant was found to decrease with increasing temperature and correlate with the change in the molar volume. An upper limit to all the loss tangents was established at 0.001. The complex dielectric constants of a few mixtures of liquid alkanes were also measured at room temperature. For a pentane-octane mixture the real part of the dielectric constant could be explained by the Clausius-Mosotti theory. For the mixtures of n-hexane-ethylacetate and n-hexane-acetone the real part of the dielectric constants could be explained by the Onsager theory extended to mixtures. The dielectric constant of the n-hexane-acetone mixture displayed deviations from the Onsager theory at the highest fractions of acetone. The dipole moments of ethylacetate and acetone were determined for dilute mixtures using the Onsager theory and were found to be in agreement with their accepted gas-phase values. The loss tangents of the mixtures exhibited a linear relationship with the volume fraction for low concentrations of the polar liquids.

NASA Program Exobiology↗

Preparation Process and Dielectric Properties of Ba(0.5)Sr(0.5)TiO3-P(VDF-CTFE) Nanocomposites

Ceramic-polymer 0-3 nanocomposites, in which nanosized Ba(0.5)Sr(0.5)TiO3 (BST) powders were used as ceramic filler and P(VDF-CTFE) 88/12 mol% [poly(vinylidene fluoridechlorotrifluoroethylene)] copolymer was used as matrix, were studied over a concentration range from 0 to 50 vol.% of BST powders. It is found that the solution cast composites are porous and a hot-press process can eliminate the porosity, which results in a dense composite film. Two different configurations used in the hot-press process are studied. Although there is no clear difference in the uniformity and microstructure of the composites prepared using these two configurations, the composite prepared using one configuration exhibit a higher dielectric constant with a lower loss. For the composite with 40 vol. BST, a dielectric constant of 70 with a loss of 0.07 at 1 kHz is obtained at room temperature. The composites exhibit a lower dielectric loss than the polymer matrix at high frequency. However, at low frequency, the composites exhibit a higher loss than the polymer matrix due to a low frequency relaxation process that appears in the composites. It is believed that this relaxation process is related to the interfacial layer formed between BST particle and the polymer matrix. The temperature dependence of the dielectric property of the composites was studied. It is found that the dielectric constant of these composites is almost independent of the temperature over a temperature range from 20 to 120 C. Key words: A. Polymer-matrix composites (PMCs); B. Electrical Properties; E. Casting; E. Heat treatment; Dielectric properties.

Zhang, Lin↗

Evaluation of Dielectric-Barrier-Discharge Actuator Substrate Materials

A key, enabling element of a dielectric barrier discharge (DBD) actuator is the dielectric substrate material. While various investigators have studied the performance of different homogeneous materials, most often in the context of related DBD experiments, fundamental studies focused solely on the dielectric materials have received less attention. The purpose of this study was to conduct an experimental assessment of the body-force-generating performance of a wide range of dielectric materials in search of opportunities to improve DBD actuator performance. Materials studied included commonly available plastics and glasses as well as a custom-fabricated polyimide aerogel. Diagnostics included static induced thrust, electrical circuit parameters for 2D surface discharges and 1D volume discharges, and dielectric material properties. Lumped-parameter circuit simulations for the 1D case were conducted showing good correspondence to experimental data provided that stray capacitances are included. The effect of atmospheric humidity on DBD performance was studied showing a large influence on thrust. The main conclusion is that for homogeneous, dielectric materials at forcing voltages less than that required for streamer formation, the material chemical composition appears to have no effect on body force generation when actuator impedance is properly accounted for.

Wilkinson, Stephen P.↗

Influence of the Dielectric Constant on the Ionic Current Rectification of Bipolar Nanopores

In this paper, we investigate how the dielectric constant, ϵ, of an electrolyte solvent influences the current rectification characteristics of bipolar nanopores. It is well recognized that bipolar nanopores with two oppositely charged regions rectify current when exposed to an alternating electric potential difference. Here, we consider dilute electrolytes with NaCl only and with a mixture of NaCl and charged nanoparticles. These systems are studied using two levels of description, all-atom explicit water molecular dynamics (MD) simulations and coarse-grained implicit solvent MD simulations. The charge density and electric potential profiles and current-voltage relationship predicted by the implicit solvent simulations with ϵ = 11.3 show good agreement with the predictions from the explicit water simulations. Under nonequilibrium conditions, the predictions of the implicit solvent simulations with a dielectric constant closer to the one of bulk water are significantly different from the predictions obtained with the explicit water model. Further, these findings are closely aligned with experimental data on the dielectric constant of water when confined to nanometric spaces, which suggests that ϵ decreases significantly compared to its value in the bulk. Moreover, the largest electric current rectification is observed in systems containing nanoparticles when ϵ = 78.8. Using enhanced sampling, we have shown that this larger rectification arises from the presence of a significantly deeper minimum in the free energy of the system with a larger ϵ, and when a negative voltage bias is applied. Since implicit solvent models and mean-field continuum theories are often used to design Janus membranes based on bipolar nanopores, this work highlights the importance of properly accounting for the effects of confinement on the dielectric constant of the electrolyte solvent. The results presented here indicate that the dielectric constant in implicit solvent simulations may be used as an adjustable parameter to approximately account for the effects of nanometric confinement on aqueous electrolyte solvents.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Why Dissolving Salt in Water Decreases Its Dielectric Permittivity

The dielectric permittivity of salt water decreases on dissolving more salt. For nearly a century, this phenomenon has been explained by invoking saturation in the dielectric response of the solvent water molecules. Herein, we employ an advanced deep neural network (DNN), built using data from density functional theory, to study the dielectric permittivity of sodium chloride solutions. Notably, the decrease in the dielectric permittivity as a function of concentration, computed using the DNN approach, agrees well with experiments. Detailed analysis of the computations reveals that the dominant effect, caused by the intrusion of ionic hydration shells into the solvent hydrogen-bond network, is the disruption of dipolar correlations among water molecules. Accordingly, the observed decrease in the dielectric permittivity is mostly due to increasing suppression of the collective response of solvent waters.

74 ATOMIC AND MOLECULAR PHYSICS↗

Low-loss Si-based Dielectrics for High Frequency Components of Superconducting Detectors

Silicon-based dielectric is crucial for many superconducting devices, including high-frequency transmission lines, filters, and resonators. Defects and contaminants in the amorphous dielectric and at the interfaces between the dielectric and metal layers can cause microwave losses and degrade device performance. Optimization of the dielectric fabrication, device structure, and surface morphology can help mitigate this problem. We present the fabrication of silicon oxide and nitride thin film dielectrics. We then characterized them using Scanning Electron Microscopy, Atomic Force Microscopy, and spectrophotometry techniques. The samples were synthesized using various deposition methods, including Plasma-Enhanced Chemical Vapor Deposition and magnetron sputtering. The film's morphology and structure were modified by adjusting the deposition pressure and gas flow. The resulting films were used in superconducting resonant systems consisting of planar inductors and capacitors. Measurements of the resonator properties, including their quality factor, were performed.

low-loss dielectrics↗

Effect of the filler morphology on the crystallization behavior and dielectric properties of the polyvinylidene fluoride‐based composite

Abstract Ceramic/polymer composites can be chemically stable, mechanically strong, and flexible, which make them candidates for electric devices, such as pressure or temperature sensors, energy storage or harvesting devices, actuators, and so forth. Depending on the application, various electrical properties are of importance. Polymers usually have low dielectric permittivity, but increased dielectric permittivity can be achieved by the addition of the ceramic fillers with high dielectric constant. With the aim to enhance dielectric properties of the composite without loss of flexibility, 5 wt% of BaTiO 3 ‐Fe 2 O 3 powder was added into a polyvinylidene fluoride matrix. The powder was prepared by different synthesis conditions to produce core/shell structures. The effect of the phase composition and morphology of the BaTiO 3 ‐Fe 2 O 3 core/shell filler on the structure and lattice dynamics of the polymer composites was investigated. Based on the results of the thermal analysis, various parameters of ceramic/polymer composites were determined. Differences in the phase composition and morphology of the filler have an influence on the formation of various polyvinylidene fluoride allomorphs and the degree of crystallinity. Furthermore, the dielectric performances of pure polyvinylidene fluoride and the polymer/ceramic composites were measured.

Polymer Science↗

On the use of dielectric elements in axion searches with microwave resonant cavities

This study explores the primary effects of dielectric materials in a resonant cavity-based search for axion dark matter. While dielectrics prove beneficial in numerous cases, their incorporation may lead to less-than-optimal performance, especially for the lowest TM mode. Additionally, the stronger confinement of the electric field inside the dielectrics can exacerbate mode mixings, in particular for higher-order modes. Case studies have been carried out using a combination of analytical solutions and numerical simulations. The findings indicate dielectric cavities employing the TM 010 mode experience a significant reduction in sensitivity when compared to a similar search conducted in a cavity at equivalent frequency using no dielectrics.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Exploring dielectric properties in atomistic models of amorphous boron nitride

Abstract We report a theoretical study of dielectric properties of models of amorphous Boron Nitride, using interatomic potentials generated by machine learning. We first perform first-principles simulations on small (about 100 atoms in the periodic cell) sample sizes to explore the emergence of mid-gap states and its correlation with structural features. Next, by using a simplified tight-binding electronic model, we analyse the dielectric functions for complex three dimensional models (containing about 10.000 atoms) embedding varying concentrations of sp 1 , sp 2 and sp 3 bonds between B and N atoms. Within the limits of these methodologies, the resulting value of the zero-frequency dielectric constant is shown to be influenced by the population density of such mid-gap states and their localization characteristics. We observe nontrivial correlations between the structure-induced electronic fluctuations and the resulting dielectric constant values. Our findings are however just a first step in the quest of accessing fully accurate dielectric properties of as-grown amorphous BN of relevance for interconnect technologies and beyond.

Materials Science↗

Acceptor-Induced Bulk Dielectric Loss in Superconducting Circuits on Silicon

The performance of superconducting quantum circuits is primarily limited by dielectric loss due to interactions with two-level systems (TLSs). State-of-the-art circuits with engineered material interfaces are approaching a limit where dielectric loss from bulk substrates plays an important role. However, a microscopic understanding of dielectric loss in crystalline substrates is still lacking. In this work, we show that boron acceptors in silicon constitute a TLS bath that leads to an energy dissipation channel for superconducting circuits. We discuss how the electronic structure of boron acceptors leads to an effective TLS response in silicon. We sweep the boron concentration in silicon and demonstrate the bulk dielectric loss limit from boron acceptors. We show that boron-induced dielectric loss can be reduced in a magnetic field due to the spin-orbit structure of boron. This work provides the first detailed microscopic description of a TLS bath for superconducting circuits and demonstrates the need for ultrahigh-purity substrates for next-generation superconducting quantum processors.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

A Reconfigurable Planar Capacitor Sensor for Thru the Jacket Dielectric Constant Measurement of Cable Insulation

Planar capacitor sensors have been proposed to measure the aging-related dielectric constant variation of the jacket or insulation materials of cables. Although capacitor sensors have been used to monitor the aging of cable insulation by removing the jacket, through the jacket measurement of cable insulation dielectric constant variation is difficult because once the sensor is placed on the jacket it would either measure the aging of the jacket or that of the jacket and insulation together. A reconfigurable sensor along with innovative cable-specific models could be used to determine the jacket and insulation aging using the same sensor. For the proposed novel reconfigurable sensor, the electric field penetration depth is changed by activating and deactivating PIN diode switches. In one instance, the sensor measures the dielectric constant variation of the jacket, while in the next, it measures the dielectric constant variation of both the jacket and the insulation. Here, by leveraging previously developed capacitance estimation models from large-scale finite element simulations for a specific cable, these two sets of measurement data are used to evaluate the aging-related dielectric constant variation of the insulation. Experimental data from aged cable specimens are presented to demonstrate the operation of the sensor.

47 OTHER INSTRUMENTATION↗

Control of second-harmonic generation in all-dielectric intersubband metasurfaces by controlling the polarity of χ (2)

All-dielectric metasurfaces have recently led to a paradigm shift in nonlinear optics as they allow for circumventing the phase matching constraints of bulk crystals and offer high nonlinear conversion efficiencies when normalized by the light-matter interaction volume. Unlike bulk crystals, in all-dielectric metasurfaces nonlinear conversion efficiencies primarily rely on the material nonlinearity, field enhancements, and the modal overlaps, therefore most efforts to date have only focused on utilizing these degrees of freedom. In this work, we demonstrate that for second-harmonic generation in all-dielectric metasurfaces, an additional degree of freedom is the control of the polarity of the nonlinear susceptibility. We demonstrate that semiconductor heterostructures that support resonant nonlinearities based on quantum-engineered intersubband transitions provide this new degree of freedom. We can flip and control the polarity of the nonlinear susceptibility of the dielectric medium along the growth direction and couple it to the Mie-type photonic modes. Here we demonstrate that engineering the χ (2) polarity in the meta-atom enables the control of the second-harmonic radiation pattern and conversion efficiency. Our results therefore open a new direction for engineering and optimizing second-harmonic generation using all-dielectric intersubband nonlinear metasurfaces.

42 ENGINEERING↗

Laboratory measurement of the complex dielectric constant of soils

The dielectric constant of a material is an extremely important parameter when considering passive radiometric remote sensing applications. This is because the emitted energy measured by a microwave radiometer is dependent on the dielectric constant of the surface being scanned. Two techniques of measuring dielectric constants are described. The first method involves a dielectric located in air. The second method uses basically the same theoretical approach, but the dielectric under consideration is located inside a section of waveguide.

Wiebe, M. L.↗

Dielectric spectra of Apollo 15 and 16 lunar solid samples

Description of the dielectric constants, losses, and ac-conductivities of lunar samples 15065,27, 15459,62, 15555,88, 15415,57, 60015,29, 60315,34, 61016,34, and 62235,17 as measured over a range of frequencies from 100 Hz to 10 MHz and temperatures from 77 to 473 K by two-terminal capacitance substitution methods. The dielectric spectra of lunar gabbroic basalts are typified by the dielectric behavior of samples 15065 and 15555, showing complex relaxation processes which are both frequency- and temperature-dependent. Such feldspar-rich crystalline lunar basalts like samples 15459, 62235, and 60015 showed essentially the same dielectric relaxation mechanisms which are also a function of both frequency and temperature with a very broad relaxation frequency distribution. Highly-brecciated lunar sample, 60315, exhibits rather an unusual dielectric behavior which is dependent upon on field-strength.

Chung, D. H.↗