A pH-responsive supramolecular polymer gel as an enteric elastomer for use in gastric devices
Abstract not provided
Zhang, Shiyi↗
SEARCH · Engineering Papers
Results for “devices”
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Device fabrication, characterization, and thermal neutron detection response of LiZnP and LiZnAs semiconductor devices
Nowotny-Juza compounds continue to be explored as candidates for solid-state neutron detectors. Such a device would have greater efficiency, in a compact form, than present day gas-filled 3 He and 10 BF 3 detectors. The 6 Li(n,t) 4 He reaction yields a total Q-value of 4.78 MeV, larger than 10 B, an energy easily identified above background radiations. Hence, devices fabricated from semiconductor compounds having either natural Li (nominally 7.5% 6 Li) or enriched 6 Li (usually 95% 6 Li) as constituent atoms may provide a material for compact high efficiency neutron detectors. Starting material was synthesized by preparing equimolar portions of Li, Zn, and As sealed under vacuum (10 -6 Torr) in quartz ampoules lined with boron nitride and subsequently reacted in a compounding furnace [1]. The raw synthesized material indicated the presence high impurity levels (material and electrical property characterizations). A static vacuum sublimation in quartz was performed to help purify the synthesized material [2], [3]. Bulk crystalline samples were grown from the purified material [4], [5]. Samples were cut using a diamond wire saw, and processed into devices. Bulk resistivity was determined from I–V curve measurements, ranging from 10 6 –10 11 Ω cm. Devices were characterized for sensitivity to 5.48 MeV alpha particles, 337 nm laser light, and neutron sensitivity in a thermal neutron diffracted beam at the Kansas State University TRIGA Mark II nuclear reactor. Thermal neutron reaction product charge induction was measured with a LiZnP device, and the reaction product spectral response was observed.
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
Advanced Functional Materials ZnO@ZIF-8 Heterostructures for Neuromorphic Synaptic Devices
Metal-Organic Frameworks have shown great promise for memristive synaptic devices because of their adaptable electrical properties and inherent porosity, which help in efficient ion transport and storage of functional molecules. However, the limited conductivity and sensitivity to moisture associated with most MOF materials hinder their use in electronic applications. In this study, MOFs derived from metabolites have been synthesized, using ZnO as a self-sacrificial metallic source to grow Zeolitic Imidazolate Framework-8 (ZIF-8), forming ZnO@ZIF-8 heteronanostructures for neuromorphic applications. These hybrids ZnO@ZIF-8 act as promising candidates for advanced electronic applications. Through systematic investigations, including a comparison of ZnO@ZIF-8 bilayer devices with ZnO single-layer counterparts, a significant discovery emerged. The bilayer synaptic devices outperformed their single layer counterparts in electrical characteristics, as evidenced by Current-Voltage curve analysis and Long-Term Potentiation/Long Term Depression (LTP/LTD) measurements. Additionally, the ZnO layer thickness (10, 30, 50 nm) has been emphasized and the effects of annealing at 300°C in a vacuum were carefully studied for Neuromorphic Synaptic Devices. Remarkably, the 10 nm ZnO layer exhibited the lowest set voltage and a consistent On/Off ratio. This work marks a significant advancement in understanding bilayer synaptic devices, highlighting the crucial role of ZIF-8 in shaping the future of neuromorphic systems
Kolleboyina, Jayaramulu↗
Morphological design strategies to tailor out-of-plane charge transport in conjugated polymer systems for device applications
The transport of charge carriers throughout an active conjugated polymer (CP) host, characterized by a heterogeneous morphology of locally varying degrees of order and disorder, profoundly influences the performance of CP-based electronic devices.
Wenderott, J. K.↗
High temperature thermoreflectance imaging and transient Harman characterization of thermoelectric energy conversion devices
Explore the source record for details and available documents.
bio-inspired↗
Multiplexed charge-locking device for large arrays of quantum devices
We present a method of forming and controlling large arrays of gate-defined quantum devices. The method uses an on-chip, multiplexed charge-locking system and helps to overcome the restraints imposed by the number of wires available in cryostat measurement systems. The device architecture that we describe here utilises a multiplexer-type scheme to lock charge onto gate electrodes. The design allows access to and control of gates whose total number exceeds that of the available electrical contacts and enables the formation, modulation and measurement of large arrays of quantum devices. We fabricate such devices on n-type GaAs/AlGaAs substrates and investigate the stability of the charge locked on to the gates. Proof-of-concept is shown by measurement of the Coulomb blockade peaks of a single quantum dot formed by a floating gate in the device. The floating gate is seen to drift by approximately one Coulomb oscillation per hour.
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
Blockchain-Enabled Secure Device-to-Device Communication in Software-Defined Networking
The Internet of Things (IoT) continues to increase the demand for seamless communication among IoT devices. The rapid growth of IoT devices has led to an exponential increase in device-to-device (D2D) communication within the Software-Defined Networking (SDN), though it enables a flexible archi-tecture for managing network resources. However, traditional security models face challenges (e.g., Security, privacy, and trust) in addressing the dynamic and decentralized nature of these communications. Despite of these challenges, this paper proposes a novel approach that leverages blockchain technology to enhance the security, privacy, and trustworthiness of D2D communication within an SDN environment. The proposed approach integrates blockchain nodes in sDN components to establish a decentralized ledger for transparent and verifiable records. Smart contracts enforce authentication rules to ensure that only authenticated devices can access the network and engage in transactions securely. It also automates the security policies to ensure temper resistance execution using the cryptographic mechanism for data integrity and authentic communication. The Implementation of the proposed algorithms validates the resilience of the proposed approach against cyberattacks. Overall, the proposed approach enables efficient and secure D2D communication for resilient SDN infrastructure in IoT ecosystems.
Das, Debashis↗
Understanding the Interplay Between CdSe Thickness and Cu Doping Temperature in CdSe/CdTe Devices
Not provided.
Energy & Fuels↗
Will Stochastic Devices Play Nice With Others in Neuromorphic Hardware?: There’s More to a Probabilistic System Than Noisy Devices
Achieving brain-like efficiency in computing requires a co-design between the development of neural algorithms, brain-inspired circuit design, and careful consideration of how to use emerging devices. The recognition that leveraging device-level noise as a source of controlled stochasticity represents an exciting prospect of achieving brain-like capabilities in probabilistic neural algorithms, but the reality of integrating stochastic devices with deterministic devices in an already-challenging neuromorphic circuit design process is formidable. Here, we explore how the brain combines different signaling modalities into its neural circuits as well as consider the implications of more tightly integrated stochastic, analog, and digital circuits. Further, by acknowledging that a fully CMOS implementation is the appropriate baseline, we conclude that if mixing modalities is going to be successful for neuromorphic computing, it will be critical that device choices consider strengths and limitations at the overall circuit level.
42 ENGINEERING↗
Development of a Host-Based Intrusion Detection and Control Device for Industrial Field Control Devices
Industrial control systems contain a multitude of devices deployed into the field to observe and control a physical process. Currently, most of these devices lack common host-based cybersecurity features, which can lead them to be seen as vulnerable targets. The Cymbiote device was developed to address this problem by examining multiple streams of data to determine what might indicate a potential threat, and to evaluate and execute appropriate response actions. This paper discusses the evolution of the Cymbiote device in response to evaluation and testing done on real-world hardware. Experimental results are discussed, as are the new developments that have been made to the device in response to the findings. In addition, we describe future research directions for this approach along with the experimental setup changes in response to the requirements for statistical rigor.
Rice, Theora R.↗
Cooling device featuring thermoelectric and diamond materials for temperature control of heat-dissipating devices
A cooling device for lowering the temperature of a heat-dissipating device. The cooling device includes a heat-conducting substrate (composed, e.g., of diamond or another high thermal conductivity material) disposed in thermal contact with the heat-dissipating device. During operation, heat flows from the heat-dissipating device into the heat-conducting substrate, where it is spread out over a relatively large area. A thermoelectric cooling material (e.g., a Bi.sub.2 Te.sub.3 -based film or other thermoelectric material) is placed in thermal contact with the heat-conducting substrate. Application of electrical power to the thermoelectric material drives the thermoelectric material to pump heat into a second heat-conducting substrate which, in turn, is attached to a heat sink.
Vandersande, Ian W.↗
Initiation devices, initiation systems including initiation devices and related methods
Initiation devices may include at least one substrate, an initiation element positioned on a first side of the at least one substrate, and a spark gap electrically coupled to the initiation element and positioned on a second side of the at least one substrate. Initiation devices may include a plurality of substrates where at least one substrate of the plurality of substrates is electrically connected to at least one adjacent substrate of the plurality of substrates with at least one via extending through the at least one substrate. Initiation systems may include such initiation devices. Methods of igniting energetic materials include passing a current through a spark gap formed on at least one substrate of the initiation device, passing the current through at least one via formed through the at least one substrate, and passing the current through an explosive bridge wire of the initiation device.
42 ENGINEERING↗
High voltage semiconductor devices and methods of making the devices
Metal-oxide-semiconductor field-effect transistor (MOSFET) devices are described which have a p-type region between the p-type well regions of the device. The p-type region can be either floating or connected to the p-type well regions by additional p-type regions. MOSFET devices are also described which have one or more p-type regions connecting the p-type well regions of the device. The p-type well regions can be arranged in a various geometric arrangements including square, diamond and hexagonal. Methods of making the devices are also described.
36 MATERIALS SCIENCE↗
Device and method for detecting presence of a wireless communication device
A device and method for detecting presence of a wireless communication device having an antenna with intrinsic characteristics includes a transmitter, a receiver, a memory element, and a processing element. The transmitter may send a first signal to the antenna of the wireless communication device. The receiver may receive a second signal from the antenna of the wireless communication device, the second signal being a first portion of the first signal that is reflected by the antenna based on intrinsic characteristics of the antenna. The memory element may store intrinsic characteristic information for the antenna. The processing element may determine presence of the wireless communication device by analyzing the second signal against the intrinsic characteristic information stored in the memory element.
Allnutt, Daniel↗
Photostability of Ambient-Processed, Conjugated Polymer Electrochromic Devices Encapsulated by Bioderived Barrier Films
Polymer-based electrochromic devices (ECDs) are a promising technology for enabling low-voltage, disposable displays, yet are currently limited by photo-oxidative bleaching of the active materials. Here, renewable barrier films composed of cellulose and chitin are presented as an alternative to poly(ethylene terephthalate) (PET) for encapsulating ECDs. To assess barrier film effectiveness, lateral ECDs composed of poly(3,4-propylenedioxythiophene-(CH 2 OEtHx) 2 ) (P(ProDOT)) active layers were constructed and encapsulated with a multilayer barrier consisting of chitin nanofibers and cellulose nanocrystals spray cast onto a cellulose acetate substrate (oxygen transmission rate (OTR) = 29 cm 3 m –2 day –1 ), a commercially available PET film (OTR = 8.5 cm 3 m –2 day –1 ), and a high-performance PET-Al 2 O 3 multilayer barrier film (OTR < 1 cm 3 m –2 day –1 ). The photodegradation of the P(ProDOT) active layer was determined by measuring the evolution of the colorimetric contrast (ΔE*) and switching speeds as a function of light exposure (100 mW cm –2 , AM 1.5 G light). Photodegradation was found to proceed at a similar rate for all encapsulated devices (roughly 10 times more slowly than unencapsulated devices), highlighting the opportunity for replacing petroleum packaging with bioderived barrier films. Analysis of the switching kinetics, the shifts in optical absorbance, and evidence of chemical degradation indicate that both photochemical breakdown of the electrolyte and cross-linking of the P(ProDOT) active material are key drivers for loss of device performance when oxygen flux to the active material is limited. Furthermore, pathways toward better understanding photodegradation are then proposed with sustainability in mind for future ECD design.
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
Investigations of the Impact of Biodiesel Metal Contaminants on Emissions Control Devices
Biodiesel is a renewable fuel with the potential to displace a portion of petroleum use. However, as with any alternative fuel, in order to be a viable choice it must be compatible with the emissions control devices. The finished biodiesel product can contain up to 5 ppm Na+K and 5 ppm Ca+Mg, and these metal impurities can lead to durability issues with the devices used to control emissions in diesel vehicles. Significant work has been performed to understand how the presence of these metals impacts each individual component of diesel emissions control systems, and this chapter summarizes the findings of these research efforts.
30 DIRECT ENERGY CONVERSION↗
Photothermal alternative to device fabrication using atomic precision advanced manufacturing techniques
The attachment of dopant precursor molecules to depassivated areas of hydrogen-terminated silicon templated with a scanning tunneling microscope (STM) has been used to create electronic devices with sub-nanometer precision, typically for quantum physics demonstrations, and to dope silicon past the solid-solubility limit, with potential applications in microelectronics and plasmonics. However, this process, which we call atomic precision advanced manufacturing (APAM), currently lacks the throughput required to develop sophisticated applications because there is no proven scalable hydrogen lithography pathway. Here, we demonstrate and characterize an APAM device workflow where STM lithography has been replaced with photolithography. An ultraviolet laser is shown to locally heat silicon controllably above the temperature required for hydrogen depassivation. STM images indicate a narrow range of laser energy density where hydrogen has been depassivated, and the surface remains well-ordered. A model for photothermal heating of silicon predicts a local temperature which is consistent with atomic-scale STM images of the photo-patterned regions. Finally, a simple device made by exposing photo-depassivated silicon to phosphine is found to have a carrier density and mobility similar to that produced by similar devices patterned by STM.
42 ENGINEERING↗