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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 73 records · Page 4
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Dial It Down: The Effect of Strongly Interacting Adsorbates on the BiAg 2 Rashba Surface State

Organic semiconductors interfaced with spin–orbit coupled materials offer a rich playground for fundamental studies of controlling spin dynamics in spintronic devices. The adsorbate–surface interactions at such interfaces play a key role in determining the valence electronic and spin structure and consequently, the device physics as well. Here we show that strong adsorbate–surface alloy interaction leads to weakening of the electronic coupling between the surface alloy atoms and quenches the spin–orbit coupled surface state, demonstrated for the case of the strong organic electron acceptor 2,7-dinitropyrene-4,5,9,10-tetrone (NO 2 –PyT, C 16 H 4 N 2 O 8 ) on the Rashba spin–orbit coupled surface alloy BiAg 2 /Ag(111). Furthermore, our findings demonstrate an important challenge associated with using molecular adsorbates to tailor the spin texture in BiAg 2 /Ag(111), and our work provides guidelines to consider while designing interfacial systems to engineer the spin texture in Rashba surface alloys.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Photophysics in emerging photovoltaics

Emerging photovoltaic technologies continue to march forward with power conversion efficiencies of lead halide perovskite solar cells (PSCs) nearing 26%, perovskite-Si tandems now exceeding the single junction detailed balance limit of 33%, and organic solar cells (OSCs) showing efficiencies nearing 20%. Yet, some of the photophysics underpinning PSCs and OSCs remain unresolved. A better understanding will enable more efficient and photostable solar cells and optoelectronic devices in the future. Here, this special issue collects the latest cutting-edge research in the photophysics of PSCs and OSCs, contributed by experts on spectroscopy, theory, device physics, and materials science.

14 SOLAR ENERGY↗
DOE OSTI2025

THz cyclotron resonance of a 2D hole gas in a GaN/AlN heterostructure

The recent discovery of highly conducting two-dimensional hole gases (2DHGs) in GaN/AlN heterojunctions has opened the door to efficient complementary GaN electronics, a long-standing challenge in wide-bandgap semiconductor device physics. Electrical transport studies and simulations indicate that both heavy- and light-hole valence bands are occupied in these 2DHGs, but direct experimental characterization of the fundamental parameters of the mobile holes remains at an early stage. Here, we use time-domain terahertz spectroscopy and pulsed magnetic fields up to 31 T to directly measure cyclotron resonance of the mobile 2D holes in these GaN-based 2DHGs at low temperature (8 K), revealing key material properties including effective masses, densities, scattering times, and mobilities.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Backscatter-Immune Injection-Locked Brillouin Laser in Silicon

As self-sustained oscillators, lasers possess the unusual ability to spontaneously synchronize. These nonlinear dynamics are the basis for a simple yet powerful stabilization technique known as injection locking, in which a laser’s frequency and phase can be controlled by an injected signal. Because of its inherent simplicity and favorable noise characteristics, injection locking has become a workhorse for coherent amplification and high-fidelity signal synthesis in applications ranging from precision atomic spectroscopy to distributed sensing. Within integrated photonics, however, these injection-locking dynamics remain relatively untapped—despite significant potential for technological and scientific impact. In this work, we demonstrate injection locking in a silicon photonic Brillouin laser. Injection locking of this monolithic device is remarkably robust, allowing us to tune the laser emission by a significant fraction of the Brillouin gain bandwidth. Harnessing these dynamics, we demonstrate amplification of small signals by more than 23 dB. Moreover, we demonstrate that the injection-locking dynamics of this system are inherently nonreciprocal, yielding unidirectional control and backscatter immunity in an all-silicon system. This device physics opens the door to strategies for phase-noise reduction, low-noise amplification, and backscatter immunity in silicon photonics.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Sensor-Assisted Fault Mitigation in Quantum Computation

We propose a method for assisting fault mitigation in quantum computation through the use of sensors, co-located near physical qubits. Specifically, we consider using transition edge sensors co-located on silicon substrates hosting superconducting qubits to monitor for energy injection from ionizing radiation that has been demonstrated to increase decoherence in transmon qubits. We generalize from these two physical device concepts and explore the potential advantages of co-located sensors to assist fault mitigation in quantum computation. In the simplest scheme, co-located sensors beneficially assist rejection of calculations potentially affected by environmental disturbances. Investigating the potential computational advantage further required development of an extension to the standard formulation of quantum error correction. In a specific case the standard three-qubit, bit flip quantum correction code, we show that given a 20% overall error probability per qubit, approximately 90% of repeated calculation attempts are correctable. However, when sensor-detectable errors account for 45% of overall error probability, the use of colocated sensors uniquely associated with independent qubits, boosts the fraction of correct final-state calculations to 96% at the cost of rejecting 7% of repeated calculation attempts.

Orrell, John L.↗
DOE OSTI2022

Coherently coupled quantum oscillators for quantum reservoir computing

Here, we analyze the properties of a quantum system composed of two coherently coupled quantum oscillators and show through simulations that it fulfills the two properties required for reservoir computing: non-linearity and fading memory. We first show that the basis states of this system apply a set of nonlinear transformations on the input signals and thus can implement neurons. We then show that the system exhibits a fading memory that can be controlled by its dissipation rates. Finally we show that a strong coupling between the oscillators is important in order to ensure complex dynamics and to populate a number of basis state neurons that is exponential in the number of physical devices.

Dudas, Julien↗
DOE OSTI2024

Web Based Beamline Control System (Bluesky Web) v0.1.0

Bluesky Web is a web based interface that provides beam line controls to the end user. It allows users to issue commands to various physical devices at a beam line end station like motors and cameras. It utilizes an open source Python library (Bluesky) as the controller. It uses Bluesky to also allow for running "plans" or a sequence of device operations that can be used when running an experiment. This program is different from other controls technologies because it is intended to be open source and can be accessed from a web browser, as opposed to other paid software that is run as a stand-alone application on a computer.

De Leon, Seij↗
DOE OSTI2024

Laboratory Upgrade Point Absorber (LUPA) CAD Files

The Laboratory Upgrade Point Absorber (LUPA) is an open-source wave energy converter designed and tested by Oregon State University. The computer-aided design (CAD) files are provided here in two forms: the original SOLIDWORKS (2021) model as "LUPA SOLIDWORKS.zip" and as a STEP file "LUPA-A1000.step". The bill of materials is provided as an Excel file with assemblies (LUPA-Axxx), part numbers (LUPA-Axxx-Pyyy), part descriptions, manufacturers, and manufacturer part numbers. This comprehensive CAD model represents LUPA as it was deployed in Fall 2022 testing at the O.H. Hinsdale Wave Research Laboratory. The mass properties including mass, center of gravity, and moments of inertia have been overridden for some parts and assemblies to match the physical device properties as determined from experiments. This appears as "overridden by user" when viewing mass properties in SOLIDWORKS. The LUPA-A1000.SLDASM file from the LUPA SOLIDWORKS.zip folder is the topmost assembly, open this file to see the entire model as one assembly. See "PMEC Page", "OpenEI Wiki Page", and the "Signature Project Page" resources below for more information on LUPA.

16 TIDAL AND WAVE POWER↗
DOE OSTI2020

Impact of undoped substrates on high performance silicon solar cells

Today's highest-efficiency silicon solar cells typically operate near the threshold between low-level and high-level injection. It is not well understood if pushing further into a regime in which the cell operating point is solidly in high-level injection at all times of the day has further benefits for the solar cell performance. From a reliability perspective, cells fabricated on lower doped silicon have a larger breakdown voltage. This advantage can affect the design of modules allowing higher voltages and a relaxation of the number of bypass diodes needed. In this project, we present a comprehensive assessment, both experimental and using simulation, of how bulk resistivity, light intensity, and operation temperature impact the performance of the silicon solar cell. This work incorporates a comprehensive device physics analysis assisted by numerical simulation. The source code is now available under General Public License (GPL3), and to further leverage the findings of this project and outreach people outside of the scientific community, we are working with www.pveducation.org (which receives >1 million visitors a year) to create interactive content using our simulation results. The simulation results indicate that high bulk resistivity wafers (>>10 Ωcm) require bulk Shockley-Read-Hall (SRH) lifetimes in the millisecond range to outperform wafers with standard bulk resistivities (<10 Ωcm). Additionally, above bulk resistivities of 10 Ωcm (the exact value depends on the bulk characteristics of the wafer), the cell efficiency is weakly dependent on the bulk resistivity. As a result, ingot manufactures may have an opportunity to further reduce wafer cost by growing higher resistivity ingots that are more tolerant to resistivity variations. This project is particularly relevant today, as solar cell architectures with improved surface passivation and milliseconds lifetimes wafers are commercially available, leveraging potential benefits of using higher bulk resistivities. Outside of interdigitated back contact (IBC) cell, reported studies on high resistivity silicon (>100 Ωcm) are very limited. To the best of our knowledge, this project provides for the first-time experimental insight on solar cells fabricated on wafers with bulk resistivities up to several thousand Ωcm, delivering a comprehensive vision of their performance under real-world temperature and light intensity operation conditions. We manufactured and characterized solar cells with bulk resistivities in the range of 1 Ωcm to >15k Ωcm. Under standard testing conditions (STC), we measured solar cells efficiencies over 20% over the entire range of bulk resistivities, using our baseline cell processing. To evaluate the cell performance in real-world operation conditions, the solar cells were measured at different temperatures (25-80°C) and at different light intensities (0.1-1 suns). The measurements show that the bulk resistivity does not impact the solar cell response to temperature and light intensity. Similar thermal coefficients (TC) were measured for standard and high bulk resistivities, and they are comparable with the TC values reported in the literature for standard bulk resistivities <10 Ωcm. After light soaking, the solar cell didn’t show signs of light-induced degradation (LID). This result was expected since n-type float zone (FZ) wafers were used in this work, i.e. low traces of boron and low concentration of oxygen (oxygen is typically found in the seed end of Czochralski (CZ) ingots). We measured for high bulk resistivities (>10 Ωcm) extremely high breakdown voltages (>1000V). In conclusion, the insight provided by this project can positively impact the levelized cost of energy (LCOE) of the photovoltaic systems through its effect on cell and ingot manufacturing yield, silicon cell power output, and module reliability.

14 SOLAR ENERGY↗
DOE OSTI2021

Scalable/Secure Cooperative Algorithms and Framework for Extremely-high Penetration Solar Integration (SolarExPert) (Final Technical Report)

This SolarExPert project has developed a Sustainable Grid Platform (SGP) with scalable architecture of distributed control and optimization. The SGP consists of the following major functions: 1) an advanced grid architecture with hierarchical and distributed communication and control, combined with the OpenFMB standard and implemented on the Multi-Agent OpenDSS (MA-OpenDSS) platform; 2) an online distributed stochastic optimal power flow; 3) an online distributed system state estimation algorithm; 4) the distributed Volt/VAR optimization and frequency control algorithms; 5) the distributed distribution system restoration strategy. The developed SGP together with advanced functions are tested in 1 million (1M)-node distribution system on the MA-OpenDSS platform. Furthermore, the models and algorithms are tested in 100,000-node system HiL simulation, and also in P-HiL implementation with 100 physical devices. The developed functions haven been validated and tested on the selected actual distribution feeder with the data collected from the field of Maui Meadows in Hawaii. The distributed PV hosting capacities with cooperative Volt/VAR and Volt/VAR/Watt control are estimated and compared to provide recommendations for customers and the utility company.

14 SOLAR ENERGY↗
DOE OSTI2022

A New Low-Temperature Approach for Efficient and Low-Cost Group V Doping in CdTe Thin Film Solar Cells (Final Technical Report)

The goal of this project is to develop a highly efficient low-temperature ex-situ Group V diffusion doping approach in the CdCl 2 treated polycrystalline CdTe film using the group V chlorides (i.e., PCl 3 , AsCl 3 , SbCl 3 , and BiCl 3 ) as dopants source. For the first time, our innovative doping strategies through the low-temperature ex-situ Group V doping process in polycrystalline CdSeTe successfully demonstrated a promising power conversion efficiency of ~19% compared to the Cu-doped counterparts. Our newly developed low-temperature ex-situ group V doping allows dedicated control of group V diffusion amount, generates a desirable depth profile, and is completely compatible with commercial CdTe module manufacturing. We built the partnership with the largest CdTe solar module manufacturing in the US, e.g., First Solar, Inc to further develop these low-temperature diffusion doped CdSeTe solar cells. Our technology was granted US Patent No. US11257977B2. In this project, we systematically investigate and characterize the new ex-situ group V doping mechanisms, defect chemistry, microstructure, and device physics in CdTe solar cells by combining experimental and theoretical means to pave the way to achieve lower cost toward $\$$0.02/kWh and higher power conversion efficiency (PCE) toward 25% in polycrystalline CdTe solar technology. This project will benefit the public by providing more affordable solar electricity and provide an effective way to address climate change.

14 SOLAR ENERGY↗
DOE OSTI2023

Virtualizing Industrial Control Networks for Cyber Resilience Experiments

Industrial control systems (ICS) networks are undergoing constant shifts to accommodate new security measures. It is challenging to test varying network configurations and security tools with physical systems as they typically include large, expensive equipment. Not only this, but researchers often do not have access to this type of equipment for development of new security tools and techniques. As a solution to these issues, this work presents a set of tools for utilizing GNS3 and Docker as a virtual ICS network. Additionally, the virtual network can be attached to physical devices including network switches, hardware simulations, and intelligent electronic devices (IEDs). Two case studies showcase a relatively complex automatically generated network and an attack on a simple ICS network with an example mitigation.

42 ENGINEERING↗
DOE OSTI2026

Degradation Mode Identification by Photocarrier Lifetime Spectroscopy on Devices and Test Structures

In this presentation, I examine the basic concepts of the device physics that can be used to distinguish various degradation and recovery modes on a cell level. The known degradation modes (bulk LeTID and LID, UVID, etc.) are due to defects and impurities that cause the photocarrier recombination according to Shockley-Reed-Hall (SRH) statistics. The SRH recombination rate strongly depends on the balance of electron and hole capture rates into the defects, which in turn, are governed by their local concentrations. The strongest recombination takes place at approximately equal concentrations of electrons and holes, while at low injection conditions (when one type of carrier dominates) the SRH recombination is suppressed. For cell degradation modes that affect the passivated interface (UVID, H-induced TOPCon contact degradation) the defects are at the interface under low-injection conditions due to either high local doping or the adjacent built-in charge in the dielectric. This mode is characterized by changes in the "diode prefactor" J01 slope in the inverse lifetime-injection level curve. In contrast, bulk degradation (LeTID, LID) affects bulk lifetime, with J01 slope unchanged. Carrier lifetime - injection level plots therefore serve as clear indicators of different degradation modes and are shown by experimental examples.

14 SOLAR ENERGY↗
NASA NTRS1972

Activities of Western Research Application Center

Operations of the regional dissemination center for NASA technology collection and information transfer are reported. Activities include customized searches for engineering and scientific applications in industry and technology transfers to businesses engaged in manufacturing high energy physics devices, subsurface instruments, batteries, medical instrumentation, and hydraulic equipment.

Source record↗
NASA NTRS1983

Advanced 3-V semiconductor technology assessment

Against a background of an extensive survey of the present state of the art in the field of III-V semiconductors for operation at microwave frequencies (or gigabit rate speeds), likely requirements of future space communications systems are identified, competing technologies and physical device limitations are discussed, and difficulties in implementing emerging technologies are projected. On the basis of these analyses, specific research and development programs required for the development of future systems components are recommended.

Nowogrodzki, M.↗
NASA NTRS1985

Efficient implementation of real-time programs under the VAX/VMS operating system

Techniques for writing efficient real-time programs under the VAX/VMS oprating system are presented. Basic operations are presented for executing at real-time priority and for avoiding needlless processing delays. A highly efficient technique for accessing physical devices by mapping to the input/output space and accessing the device registrs directly is described. To illustrate the application of the technique, examples are included of different uses of the technique on three devices in the Langley Avionics Integration Research Lab (AIRLAB): the KW11-K dual programmable real-time clock, the Parallel Communications Link (PCL11-B) communication system, and the Datacom Synchronization Network. Timing data are included to demonstrate the performance improvements realized with these applications of the technique.

Johnson, S. C.↗
NASA NTRS1987

A study of charged particles/radiation damage to VLSI device materials

Future spacecraft systems such as the manned space station will be subjected to low-dose long term radiation particles. Most electronic systems are affected by such particles. There is therefore a great need to understand device physics and failure mechanisms affected by radiation and to design circuits that would be less susceptible to radiation. Using 2 MeV electron radiation and bias temperature aging, it was found that MOS capacitors that were prepositively biased have lower flatband voltage shift and lesser increase in density of surface state charge than those that were not prepositively biased. In addition, it was shown that there is continued recovery of flatband voltage and density of state charge in irradiated capacitors during both room temperature anneal and 137 degree anneal. When nMOS transistors were subjected to 1 MeV proton radiation, charge pumping and current versus voltage measurements indicated that transconductance degradation, threshold voltage shifts and changes in interface states density may be the primary cause of nMOS transistor failure after radiation. Simulation studies using SPICE were performed on CMOS SRAM cells of various transistor sizes. It is shown that transistor sizing affects the noise margins of CMOS SRAM cells, and that as the beta ratio of the transistors of the CMOS SRAM cell decreases, the effective noise margin of the SRAM cell increases. Some suggestions were made in connection with the design of CMOS SRAMS that are hardened against single event upsets.

Okyere, John G.↗
NASA NTRS1987

Current distribution in a three-dimensional IC analyzed by a perturbation method. Part 1: A simple steady state theory

The steady state current distribution in a three dimensional integrated circuit is presented. A device physics approach, based on a perturbation method rather than an equivalent lumped circuit approach, is used. The perturbation method allows the various currents to be expressed in terms of elementary solutions which are solutions to very simple boundary value problems. A Simple Steady State Theory is the subtitle because the most obvious limitation of the present version of the analysis is that all depletion region boundary surfaces are treated as equipotential surfaces. This may be an adequate approximation in some applications but it is an obvious weakness in the theory when applied to latched states. Examples that illustrate the use of these analytical methods are not given because they will be presented in detail in the future.

Edmonds, Larry D.↗