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Defect engineering in wide-bandgap perovskites for efficient perovskite–silicon tandem solar cells
Wide-bandgap (WBG) mixed-halide perovskites show promise of realizing efficient tandem solar cells but at present suffer from large open-circuit voltage loss and the mechanism is still unclear. Here we show that WBG perovskites with iodide–bromide compositions have an increased concentration of deep traps induced by iodide interstitials, which limits performance of WBG perovskite cells. We employ tribromide ions to suppress the iodide interstitial formation and thus reduce charge recombination in bladed WBG perovskite films of Cs 0.1 FA 0.2 MA 0.7 Pb(I 0.85 Br 0.15 )3. The 1-µm-thick opaque WBG perovskite solar cells have an efficiency of 21.9%, a small open-circuit voltage deficit of 0.40 V and a large fill factor of 83%. The efficiency of the best-performing monolithic perovskite–silicon tandem cell using this perovskite reaches 28.6%. Furthermore, the tribromide addition also suppresses light-induced phase segregation in WBG perovskites and thus enhance device stability. Encapsulated tandem cells maintain 93% of their initial efficiency after operation for 550 h.
Atomic-scale intercalation and defect engineering for enhanced magnetism and optoelectronic properties in atomically thin GeS
Not Available
Perovskite Na-ion conductors developed from analogous Li 3 x La 2/3− x TiO 3 (LLTO): chemo-mechanical and defect engineering
New Na-ion conductors Na 0.5 La 0.5 ZrO 3 and Na 0.25 La 0.25 Ba 0.5 ZrO 3 with expanded lattices were developed based on perovskite LLTO, successfully increasing the conductivities vs. unexpanded (Na,La)TiO 3 by up to ∼50×.
Robust nanoporous NiMn oxide electrocatalysts for the oxygen evolution reaction through defect engineering
Excellent catalytic performance of oxygen vacancy enriched, nano-porous Mn 3 O 4 /Ni/NiMnO 3 architecture.
Precision Defect Engineering in 2D Materials via Automated STEM Atomic Fabrication
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Using engineered defects to explore 3D feedback processes in current-driven metal.
Abstract not provided.
Engineering Defects in AlGaN for Advanced Information Processing.
Abstract not provided.
Understanding Electrothermal Instability Growth by Comparing Z-Pinches with Engineered Defects to 3D-MHD Simulations.
Abstract not provided.
Using engineered defects to understand the seed for instabilities in current-driven metal.
Abstract not provided.
Engineering Electrical Transport by Implantation‐Induced Defects in CrN Films Without Affecting Thermal Conductivity
The transport properties of CrN thin films deposited on sapphire have been tailored through structural modifications induced by cumulative argon implantation. As-grown samples experience the typical structural transition in CrN films from orthorhombic at low temperature to cubic above the Néel temperature (≈280 K) and exhibit a metallic-like conduction in both phases. With increasing implantation dose, the conduction mode shifts to a semiconductor-like behavior in both phases, albeit at different damage levels. Analysis of the results suggests that hopping conduction becomes dominant beyond a given damage threshold. The results highlight a promising correlation between defect engineering and conduction mechanisms, offering valuable insights into the versatile electrical properties of CrN films. These implantation-induced defects scatter carriers, leading to a decrease in their mobility. As the implantation dose increases, the defect landscape evolves, modifying the density of states. However, up to a dose of 0.050 dpa, no significant influence on phonon scattering is observed. This approach demonstrates that ion implantation enables precise tuning of CrN's electrical properties without affecting thermal conductivity, offering valuable insights into defect engineering in transition metal nitrides and underscoring its potential for transport properties decorrelation.
Laser-Assisted Synthesis of Monolayer 2D MoSe 2 Crystals with Tunable Vacancy Concentrations: Implications for Gas and Biosensing
We report tuning the structural and electronic properties of atomically thin two-dimensional (2D) materials via defect and vacancy engineering is the key to enabling their potential use in various applications, including electronics, energy, and sensing devices. Vacancies are, for instance, becoming highly promising for the enhanced interaction of gases and biomolecules with 2D materials in energy and sensing applications. However, the deterministic generation of desirable vacancies with tunable concentrations remains a challenge in 2D materials due to the limitations in the current growth methods, such as the complex reaction chemistries and gas flow dynamics. Therefore, engineering defects and vacancies in 2D materials have been mainly limited to destructive top-down processes such as heating, ion bombardments, and laser postprocessing. Here, we introduce a single-step bottom-up synthesis approach for the growth of monolayer MoSe 2 crystals with tunable vacancy concentrations. This method utilizes the spatiotemporal properties and adjustable power densities of the lasers to control the vaporization dynamics of the stoichiometric MoSe 2 powders. Such a mechanism in the vaporization allows us to grow tunable stoichiometry monolayer MoSe 2–x crystals on the substrates. The localized and time-controlled (250 ms to 2 s) vaporization of the MoSe 2 powder by a CO 2 laser enables the formation of monolayer crystals with controlled vacancy concentrations ranging from ~1 to 20%. The effects of laser power, laser irradiation time, and background pressure on the tuning range and subsequent properties of the crystals are investigated and quantified using Raman and photoluminescence spectroscopy, scanning transmission electron microscopy (STEM), and time-correlated single-photon counting (TCSPC). This bottom-up synthesis is a promising approach that allows the deterministic vacancy tuning for future electronics and, in particular, gas and biosensing applications without the need for further postprocessing and potential structural disruption of the crystals.
Enhanced Exciton-to-Trion Conversion by Proton Irradiation of Atomically Thin WS 2
Defect engineering of van der Waals semiconductors has been demonstrated as an effective approach to manipulate the structural and functional characteristics toward dynamic device controls, yet correlations between physical properties with defect evolution remain underexplored. Here, using proton irradiation, we observe an enhanced exciton-to-trion conversion of the atomically thin WS 2 . The altered excitonic states are closely correlated with nanopore induced atomic displacement, W nanoclusters, and zigzag edge terminations, verified by scanning transmission electron microscopy, photoluminescence, and Raman spectroscopy. Density functional theory calculation suggests that nanopores facilitate formation of in-gap states that act as sinks for free electrons to couple with excitons. The ion energy loss simulation predicts a dominating electron ionization effect upon proton irradiation, providing further evidence on band perturbations and nanopore formation without destroying the overall crystallinity. This study provides a route in tuning the excitonic properties of van der Waals semiconductors using an irradiation-based defect engineering approach.
Dislocation-Assisted Quasi-Two-Dimensional Semiconducting Nanochannels Embedded in Perovskite Thin Films
Defect engineering in perovskite thin films has attracted extensive attention recently due to the films’ atomic-scale modification, allowing for remarkable flexibility to design novel nanostructures for next generation nanodevices. However, the defect-assisted three-dimensional nanostructures in thin film matrices usually has large misfit strain and thus causes unstable thin film structures. In contrast, defect-assisted one- or two-dimensional nanostructures embedded in thin films can sustain large misfit strains without relaxation, which make them suitable for defect engineering in perovskite thin films. Here, we reported the fabrication and characterization of edge-type misfit dislocation-assisted two-dimensional BiMnO x nanochannels embedded in SrTiO 3 /La 0.7 Sr 0.3 MnO 3 /TbScO 3 perovskite thin films. The nanochannels are epitaxially grown from the surrounding films without noticeable misfit strain. Diode-like current rectification was spatially observed at nanochannels due to the formation of Schottky junctions between BiMnO x nanochannels and conducting La 0.7 Sr 0.3 MnO 3 thin films. Such atomically scaled heterostructures constitute more flexible ultimate functional units for nanoscale electronic devices.
Manipulating ferroelectric behaviors via electron-beam induced crystalline defects
Ferroelectric nanoplates are attractive for applications in nanoelectronic devices. Defect engineering has been an effective way to control and manipulate ferroelectric properties in nanoscale devices. Defects can act as pinning centers for ferroelectric domain wall motion, altering the switching properties and domain dynamics of ferroelectrics. However, there is a lack of detailed investigation on the interactions between defects and domain walls in ferroelectric nanoplates due to the limitation of previous characterization techniques, which impedes the development of defect engineering in ferroelectric nanodevices. In this study, we applied in situ biasing transmission electron microscopy to explore how dislocation loops, which were judiciously introduced into barium titanate nanoplates via electron beam irradiation, affect the motion of ferroelectric domain walls. The results show that the motion was dramatically suppressed by these localized defects, because of the local strain fields induced by the defects. Additionally, the pinning effect can be further enhanced by multiple domain walls embedded with defect arrays. These results indicate the possibility of manipulating domain switching in ferroelectric nanoplates via the electron beam.
Advances and perspectives of hard carbon anode modulated by defect/hetero elemental engineering for sodium ion batteries
Sodium-ion batteries (SIBs) serve as a promising complement to lithium-ion batteries for large-scale energy storage, leveraging the abundance of sodium resources and notable safety advantages. The key advancement in SIB industrialization hinges on identifying a cost-effective and high-performance anode material, similar to the graphite anode in lithium-ion batteries. Hard carbon emerges as prime anode materials for SIBs, boasting high specific capacity, low sodium storage potential, and wide availability. However, practical applications of hard carbon encounters challenges such as low initial Coulombic efficiency (ICE), inadequate long-term cycling stability, and poor rate performance. Recent research has focused on the optimization of hard carbon electrodes through functional design. In this comprehensive review, we have meticulously examined the progress in enhancing sodium storage performance through microstructural modulation within hard carbon, encompassing four pivotal aspects: heteroatom doping, incorporation of oxygen functional groups, surface coating, and intrinsic defect engineering. Progress in implementing these strategies is scrutinized, while the merits and challenges of each defect engineering approach are discussed. In conclusion, this review also looks into forthcoming opportunities and challenges in the practical application process of hard carbon electrodes in SIBs.
Interface magnetism in vanadium-doped MoS 2 /graphene heterostructures
Magnetism in two-dimensional materials is of great importance in discovering new physical phenomena and developing new devices at the nanoscale. In this paper, first-principles simulations are used to calculate the electronic and magnetic properties of heterostructures composed of graphene and MoS 2 considering the influence of point defects and vanadium doping. It is found that the concentration of the dopants and the types of defects can result in induced magnetic moments leading to ferromagnetically polarized systems with sharp interfaces. This provides a framework for interpreting the experimental observations of enhanced ferromagnetism in both MoS 2 /graphene and V-doped MoS 2 /graphene heterostructures. The computed electronic and spin polarizations give a microscopic understanding of the origin of ferromagnetism in these systems and illustrate how doping and defect engineering can lead to targeted property tunability. Our work has demonstrated that through defects engineering, ferromagnetism can be achieved in V-doped MoS2/graphene heterostructures, providing a potential way to induce magnetization in other TMDC/graphene materials and opening new opportunities for their applications in nano-spintronics.
The study of local overheating and plasma formation on stainless steel z-pinch targets
Plasma formation from intensely ohmically heated conductors is known to be highly non-uniform, as local overheating can be driven by micron-scale imperfections. Detailed understanding of plasma formation is required to predict the performance of magnetically driven physics targets and magnetically-insulated transmission lines (MITLs). Previous LDRD-supported work (projects 178661 and 200269) developed the electrothermal instability (ETI) platform, on the Mykonos facility, to gather high-resolution images of the self-emission from the non-uniform ohmic heating of z-pinch rods. Experiments studying highly inhomogeneous alloyed aluminum captured complex heating topography. To enable detailed comparison with magnetohydrodynamic (MHD) simulation, 99.999% pure aluminum rods in a z-pinch configuration were diamond-turned to ~10nm surface roughness and then further machined to include well-characterized micron-scale "engineered" defects (ED) on the rod's surface (T.J. Awe, et al., Phys. Plasmas 28, 072104 (2021)). In this project, the engineered defect hardware and diagnostic platform were used to study ETI evolution and non-uniform plasma formation from stainless steel targets. The experimental objective was to clearly determine what, if any, role manufacturing, preparation, or alloy differences have in encouraging nonuniform heating and plasma formation from high-current density stainless steel. Data may identify improvements that may be implemented in the fabrication/preparation of electrodes used on the Z machine. Preliminary data shows that difference in manufacturer has no observed effect on ETI evolution, stainless alloy 304L heated more uniformly than alloy 310 at similar current densities, and that stainless steel undergoes the same evolutionary ETI stages as ultra-pure aluminum, with increased emission tied to areas of elevated surface roughness.