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At least 73 records · Page 4
All sourcesNASA NTRSDOE OSTI
NASA NTRS1976

The critical currents in superconducting tin films

The nonlinear current-voltage curves exhibited by tin films in the flux flow state have made studies of the amount of heating present in the sample necessary. The samples in this work consisted of an evaporated tin film on one side of a 2 mm thick crystal quartz substrate and a carbon film of the same configuration as the tin film on the back of the substrate. The carbon film was used as a thermometer to measure the temperature rise of the tin film above the bath temperature. The heating results indicate negligible effects in the samples. Temperature ratios as small as 0.80 for the tin samples have been investigated and the current-voltage characteristics are still nonlinear, indicating that the source of the nonlinearity is not Joule heating in the samples.

Payne, J. E.↗
NASA NTRS1976

Spatially non-uniform response of Al/x/Ga/1-x/As-GaAs heteroface cells

The presence of localized regions of poor current-voltage characteristic in heteroface solar cells made by liquid phase epitaxy of Al(x)Ga(1-x)As on GaAs was demonstrated by the formation of mesa diodes with better characteristics than the parent cell, and by direct observation with a flying spot scanner. The latter was also correlated with the characteristics of subsequently etched mesas. Visible features on the cells were found to be harmless or actually regions of enhanced collection in some cases, and responsible for cell performance degradation in others.

Sekela, A. M.↗
NASA NTRS1976

High altitude calibration of thirty-three silicon and gallium arsenide solar cells on a sounding rocket

Twenty-nine n/p silicon and four p/n gallium arsenide solar cells were calibrated on board a high-altitude sounding rocket which provided a stable platform outside the earth's atmosphere. Approximately 75 characteristic current-voltage curves were obtained for each of thirty-two of the cells; the calibration accuracy for both current and voltage was 0.1%. For comparison, the short circuit current, open circuit voltage, and maximum power of the solar cells were also measured under solar simulators (air mass = 0) and on the ground (air mass = 1.2).

Thomas, N. L.↗
NASA NTRS1978

A Schottky-barrier solar cell on sliced polycrystalline GaAs

Antireflecting-metal-oxide-semiconductor (AMOS) technology has been applied to sliced wafers of polycrystalline GaAs having grain sizes of about 100 microns. Simulated AM1 sunlight efficiencies up to 14% were obtained, and studies using the scanning electron microscope showed that grain boundaries have a minimal effect on short-circuit current density. However, current-voltage characteristics show some influence on open-circuit voltage.

Yeh, Y. C. M.↗
NASA NTRS1979

The potential of np GaAs solar cells for high efficiency concentrator applications

This communication considers the design of the front grid contact of np GaAs solar cells for high efficiency concentrator applications. This design involves shadowing, contact resistance, and active layer sheet resistance losses, and at high concentrations, the power loss due to voltage drop on the resistance of the grid fingers should be considered. Analysis of the performance can be calculated as a function of junction depth and surface recombination velocity. The junction depth can be optimized by considering its effect on the collection efficiency of the dark current-voltage characteristics or the open circuit voltage, and on the series resistance loss or the fill factor for material parameters. The choice of the material parameters, calculation of the short circuit current, the selection of the n layer thickness, and the cell maximum power and efficiency are discussed. It is concluded that optimized multi-grid structures should allow the use of 10 by 10 sq cm cells with good efficiencies at high concentration ratios, and efficiencies of 22 to 25% should be obtainable from large area cells at concentrations of 40 AM1.

Flat, A.↗
NASA NTRS1978

Electrodynamic tether

Areas of scientific investigation which are suitable for study with an Electrodynamic Tether are considered and recommendations for an evolutionary development program which ties together many of the studies are presented. The essential component of an Electrodynamic Tether System is an insulated, conducting tether. A voltage monitor and a current controller then provide a means of performing the majority of the measurements and experiments involved in the scientific investigations. The scientific areas of study which were identified include: potential difference measurements between widely spaced (10-100 km) regions in the ionosphere; plasma disturbance generation and propagation; wave injection studies in the VLF to ULF (micropulsation) region; and the current-voltage characteristic of a spherical satellite.

Williamson, P. R.↗
NASA NTRS1980

A base-metal conductor system for silicon solar cells

Solder, copper, and silver are evaluated as conductor layer metals for silicon solar cell metallization on the basis of metal price stability and reliability under operating conditions. Due to its properties and cost, copper becomes an attractive candidate for the conductor layer. It is shown that nickel operates as an excellent diffusion barrier between copper and silicon while simultaneously serving as an electrical contact and mechanical contact to silicon. The nickel-copper system may be applied to the silicon by plating techniques utilizing a variety of plating bath compositions. Solar cells having excellent current-voltage characteristics are fabricated to demonstrate the nickel-copper metallization system.

Coleman, M. G.↗
NASA NTRS1981

Variable N-type negative resistance in an injection-gated double-injection diode

Double-injection (DI) switching devices consist of p+ and n+ contacts (for hole and electron injection, respectively), separated by a near intrinsic semiconductor region containing deep traps. Under proper conditions, these devices exhibit S-type differential negative resistance (DNR) similar to silicon-controlled rectifiers. With the added influence of a p+ gate appropriately placed between the anode (p+) and cathode (n+), the current-voltage characteristic of the device has been manipulated for the first time to exhibit a variable N-type DNR. The anode current and the anode-to-cathode voltage levels at which this N-type DNR is observed can be varied by changing the gate-to-cathode bias. In essence, the classical S-type DI diode can be electronically transformed into an N-type diode. A first-order phenomenological model is proposed for the N-type DNR.

Kapoor, A. K.↗
NASA NTRS1982

A simplified solar cell array modelling program

As part of the energy conversion/self sufficiency efforts of DSN engineering, it was necessary to have a simplified computer model of a solar photovoltaic (PV) system. This article describes the analysis and simplifications employed in the development of a PV cell array computer model. The analysis of the incident solar radiation, steady state cell temperature and the current-voltage characteristics of a cell array are discussed. A sample cell array was modelled and the results are presented.

Hughes, R. D.↗
NASA NTRS1982

Effect of thickness on silicon solar cell efficiency

A computer-aided-design study on the dependence of the efficiency peak of a back-surface field solar cell on the concentrations of the recombination and dopant impurities is presented. The illuminated current-voltage characteristics of more than 100 cell designs are obtained using the transmission line circuit model to numerically solve the Shockley equations. Using an AM 1 efficiency of 17% as a target value, it is shown that the efficiency versus thickness dependence has a broad maximum which varies by less than 1% over more than a three-to-one range of cell thicknesses from 30 to 100 microns. An optically reflecting back surface will give only a slight improvement of AM 1 efficiency, about 0.7%, in this thickness range. Attention is given to the dependence of the efficiency on patchiness across the back-surface field low-high junction in thin cells.

Sah, C.-T.↗
NASA NTRS1982

User handbook for block IV silicon solar cell modules

The essential electrical and mechanical characteristics of block 4 photovoltaic solar cell modules are described. Such module characteristics as power output, nominal operating voltage, current-voltage characteristics, nominal operating cell temperature, and dimensions are tabulated. The limits of the environmental and other stress tests to which the modules are subjected are briefly described.

Smokler, M. I.↗
NASA NTRS1978

Preliminary results on the conversion of laser energy into electricity

A preliminary experiment was performed to investigate conversion of 10.6 micron laser energy to electrical energy via a laser-sustained argon plasma. Short-circuit currents of 0.7 A were measured between a thoriated-tungsten emitter and collector electrodes immersed in the laser-sustained argon plasma. Open-circuit voltages of about 1.5 V were inferred from the current-voltage load characteristics. The dominant mechanism of laser energy conversion is uncertain at this time. Much higher output powers appear possible.

Thompson, R. W.↗
NASA NTRS1982

Numerical simulation of a conducting disk partially covered by an insulator interacting with a plasma

A numerical simulation has been made of the 'pinhole effect' which produces the characteristic 'S-shaped' current-voltage curve. A disk-shaped conducting probe immersed in a plasma is modeled using a particle-in-cell (PIC) code. A probe partially covered by a very thin insulating layer is considered, as well as a probe mounted on an insulating disk. The simulation uses a cylindrical particle mover and allows for a variable number of particles in the system. The simulation space grid uses three different mesh sizes, the coarsest being away from the probe and the finest near the probe, in order to accurately calculate the trajectories of the simulation particles contributing the current to the probe and to the surface charge density on the dielectric. The calculation of the electrostatic potential is done self-consistently using successive over-relaxation (SOR). Backscattering and secondary electron emission are included for the case of positive probe voltage.

Chaky, R. C.↗
NASA NTRS1971

Proximity effect between superconducting and normal metals

Electrical characteristics of thin films of tin vapor deposited on gold substrates are described. Favorable characteristics of these films include: (1) shiny and smooth finishes; (2) higher Josephson critical currents; (3) smaller electronic mean paths; and (4) consistent current-voltage curve shapes. One unfavorable characteristic is a much steeper increase of the Josephson critical current with decreasing temperature. The functional variation of the Josephson current with the control current is described. Two functional forms have been observed and a brief description as to possible mechanisms for this behavior have been included.

Meissner, H.↗
NASA NTRS1970

Constant current load matches impedances of electronic components

Constant current load with negative resistance characteristics actively compensates for impedance variations in circuit components. Through a current-voltage balancing operation the internal impedance of the diodes is maintained at a constant value. This constant current load circuit can be used in simple telemetry systems.

Alexander, R. M.↗
NASA NTRS1972

Weakly superconducting, thin-film structures as radiation detectors.

Measurements were taken with weakly superconducting quantum structures of the Notarys-Mercereau type, representing a thin superconductor film with a short region that is weakened in the sense that its transition temperature is lower than in the remaining portion of the film. The structure acts as a superconducting relaxation oscillator in which the supercurrent increases with time until the critical current of the weakened section is attained, at which moment the supercurrent decays and the cycle repeats. Under applied radiation, a series of constant-voltage steps appears in the current-voltage curve, and the size of the steps varies periodically with the amplitude of applied radiation. Measurements of the response characteristics were made in the frequency range of 10 to 450 MHz.

Kirschman, R. K.↗
NASA NTRS1980

Experimental and theoretical investigations of the quality factor for N/+/P silicon solar cells

Many N(+)P silicon solar cells made with silicon from different growth techniques have current-voltage relations of the form: I = I(0) (exp(qV/AkT) - 1), where the quality factor A is nonintegral, is greater than 1, and shows a temperature dependence. The dark forward characteristics of such cells have been measured over a range of temperatures and the behavior of the factor A derived from them. Lack of agreement with previous models has led to the development of a new model, in which N(+) conduction electrons tunnel to deep levels near that side, these levels being due to junction contamination by impurities. Electron recombination then occurs with holes thermally assisted into the junction from the P side. This mechanism involves increased I(0) values over those for diffusion diode processes and thus reduces the cell power conversion efficiency.

Garlick, G. F. J.↗