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Results for “current-voltage characteristic”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 73 records · Page 4
All sourcesNASA NTRSDOE OSTI
NASA NTRS1976

Spatially non-uniform response of Al/x/Ga/1-x/As-GaAs heteroface cells

The presence of localized regions of poor current-voltage characteristic in heteroface solar cells made by liquid phase epitaxy of Al(x)Ga(1-x)As on GaAs was demonstrated by the formation of mesa diodes with better characteristics than the parent cell, and by direct observation with a flying spot scanner. The latter was also correlated with the characteristics of subsequently etched mesas. Visible features on the cells were found to be harmless or actually regions of enhanced collection in some cases, and responsible for cell performance degradation in others.

Sekela, A. M.↗
NASA NTRS1976

High altitude calibration of thirty-three silicon and gallium arsenide solar cells on a sounding rocket

Twenty-nine n/p silicon and four p/n gallium arsenide solar cells were calibrated on board a high-altitude sounding rocket which provided a stable platform outside the earth's atmosphere. Approximately 75 characteristic current-voltage curves were obtained for each of thirty-two of the cells; the calibration accuracy for both current and voltage was 0.1%. For comparison, the short circuit current, open circuit voltage, and maximum power of the solar cells were also measured under solar simulators (air mass = 0) and on the ground (air mass = 1.2).

Thomas, N. L.↗
NASA NTRS1978

A Schottky-barrier solar cell on sliced polycrystalline GaAs

Antireflecting-metal-oxide-semiconductor (AMOS) technology has been applied to sliced wafers of polycrystalline GaAs having grain sizes of about 100 microns. Simulated AM1 sunlight efficiencies up to 14% were obtained, and studies using the scanning electron microscope showed that grain boundaries have a minimal effect on short-circuit current density. However, current-voltage characteristics show some influence on open-circuit voltage.

Yeh, Y. C. M.↗
NASA NTRS1979

The potential of np GaAs solar cells for high efficiency concentrator applications

This communication considers the design of the front grid contact of np GaAs solar cells for high efficiency concentrator applications. This design involves shadowing, contact resistance, and active layer sheet resistance losses, and at high concentrations, the power loss due to voltage drop on the resistance of the grid fingers should be considered. Analysis of the performance can be calculated as a function of junction depth and surface recombination velocity. The junction depth can be optimized by considering its effect on the collection efficiency of the dark current-voltage characteristics or the open circuit voltage, and on the series resistance loss or the fill factor for material parameters. The choice of the material parameters, calculation of the short circuit current, the selection of the n layer thickness, and the cell maximum power and efficiency are discussed. It is concluded that optimized multi-grid structures should allow the use of 10 by 10 sq cm cells with good efficiencies at high concentration ratios, and efficiencies of 22 to 25% should be obtainable from large area cells at concentrations of 40 AM1.

Flat, A.↗
NASA NTRS1978

Electrodynamic tether

Areas of scientific investigation which are suitable for study with an Electrodynamic Tether are considered and recommendations for an evolutionary development program which ties together many of the studies are presented. The essential component of an Electrodynamic Tether System is an insulated, conducting tether. A voltage monitor and a current controller then provide a means of performing the majority of the measurements and experiments involved in the scientific investigations. The scientific areas of study which were identified include: potential difference measurements between widely spaced (10-100 km) regions in the ionosphere; plasma disturbance generation and propagation; wave injection studies in the VLF to ULF (micropulsation) region; and the current-voltage characteristic of a spherical satellite.

Williamson, P. R.↗
DOE OSTI2025

InAs sidewall tunnel diodes enabled by surface states

Negative differential resistance (NDR), where the device current decreases with increasing bias voltage, is a representative phenomenon where quantum mechanics induces counterintuitive physical behavior and offers promising applications such as high-frequency oscillators, amplifiers, and multilevel logic circuits. While the NDR behavior has been extensively studied in various materials and devices, the role of surface properties in NDR, particularly in InAs-based diodes, remains underexplored. In this work, we report the observation of NDR in vertically structured InAs p + n diodes that exhibit a peak-valley current ratio of ∼6, which is suitably high for applications. Circumference-normalized current–voltage characterization revealed that the NDR originates from band-to-band tunneling between the valence band of p + -InAs and the conduction band of an n + -InAs surface, where the n + surface is due to surface states on otherwise n − -InAs. In addition, by comparing devices with various surface passivation methods (without intentional passivation, benzocyclobutene polymer, and silicon nitride), we found that the surface termination significantly affects the NDR characteristics. We present an equivalent circuit model to explain the observed device behavior. These findings offer insights into surface-enabled NDR phenomena and present new knobs for engineering NDR devices.

Circuit theorems↗
DOE OSTI2026

Outdoor Deployment Data for a Four-Terminal GaAs//Si Tandem Solar Mini-Module

This dataset contains the complete outdoor measurement and analysis data for a mechanically stacked, four-terminal (4T) gallium arsenide (GaAs)//silicon (Si) tandem solar mini-module deployed from October 2019 to January 2021 at the Solar Radiation Research Laboratory (SRRL) in Golden, Colorado, USA. The data support a performance modeling and degradation analysis framework for tandem photovoltaic devices, as described in the accompanying publication. The dataset includes: (1) current–voltage (J–V) characteristics of each sub-cell measured approximately every five minutes, with extracted performance parameters; (2) spectral irradiance from an EKO MS-710 WISER spectroradiometer, along with derived spectral mismatch ratios (SMR) and average photon energy (APE); (3) one-minute resolution meteorological data from the co-located SRRL weather station and GPS-derived precipitable water vapor (PWV); (4) pre-deployment laboratory characterization (external quantum efficiency, J–V curves, standard test conditions parameters); (5) outdoor-extracted temperature and PWV correction coefficients; and (6) PVcircuit equivalent-circuit simulation outputs used for model validation. Degradation rates of −4.1 ± 0.2 %/year (GaAs) and −2.5 ± 0.9 %/year (Si) were determined using a filtering and normalization methodology adapted for fixed-tilt tandem modules. All data are provided in open, portable formats (Apache Parquet, CSV, JSON) to enable full reproducibility of the published analysis.

14 SOLAR ENERGY↗
DOE OSTI2024

Voltage-induced magnetic domain evolution in a phase-change material

Applying voltage to metal–insulator transition (MIT) materials allows electrical actuation of the local electronic phase state. In MIT systems that have the electronic order coupled with the magnetic order, voltage switching of the electronic phase state can also enable the electrical manipulation of magnetic properties. In this work, we utilized x-ray magnetic circular dichroism photoemission electron microscopy (XMCD-PEEM) to investigate the control of magnetic domain configurations in ferromagnetic MIT electrical switches. For applied voltages above a threshold value, the XMCD-PEEM images show that the magnetic domains separate into two distinct regions: one with a high contrast (white/black), indicating well-defined micrometer-scale magnetic domains with a component of their magnetization aligned parallel/antiparallel to the x-ray helicity, and the other with different shades of intermediate contrast (gray). Significant changes in magnetic domain configurations upon voltage biasing were only observed in these gray regions. Furthermore, the voltage-induced magnetic domain separation was found to be bias polarity-dependent, with the gray regions expanding from the opposite sample edge when the applied voltage polarity was reversed. This polarity-dependent electrical control of magnetic domain configurations during the MIT switching opens alternative opportunities in memory applications for magnetic MIT switching materials.

42 ENGINEERING↗
DOE OSTI2025

The influence of V-defects, leakage, and random alloy fluctuations on the carrier transport in red InGaN MQW LEDs

Red InGaN-based light-emitting diodes (LEDs) exhibit lower internal quantum efficiencies than violet, blue, and green InGaN LEDs due to a reduction in radiative recombination rates relative to non-radiative recombination rates as the Indium composition increases. Additionally, the larger polarization and band offset barriers between high indium content InGaN quantum wells and GaN quantum barriers increase the forward voltage. In blue and green LEDs, random alloy fluctuations and V-defects play a key role in reducing the forward voltage. When V-defects are present, either naturally or intentionally introduced, they create an alternative path for carrier injection into the MQWs through the V-defect sidewalls. This injection mechanism explains the turn-on voltages of green LEDs. However, in InGaN red LEDs, these two phenomena do not reduce the forward voltage as effectively as in blue and green LEDs, and consequently, the computed forward voltage remains significantly higher than the measured one. Furthermore, currents are observed at low voltages before the turn-on voltage (V<ℏω/e=2.0 V) of red LEDs. To address this, we introduce dislocation-induced tail states in the modeling, suggesting that leakage current through these states may play a significant role both below and at turn-on voltages. The simulation also indicates that leakage carriers below turn-on accumulate, partially diffuse in the QWs, screen the polarization-induced barrier in the low injection regime, and further reduce the forward voltage. Despite these beneficial effects, a drawback of dislocation-induced tail states is the enhanced nonradiative recombination in the dislocation line region. This study provides a detailed analysis of device injection physics in InGaN QW red LEDs and outlines potential optimization strategies.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

Robust and symmetric magnetic field dependency of superconducting diode effect in asymmetric Dirac semimetal SQUIDs

The recent demonstration of the superconducting diode effect (SDE) has generated renewed interest in superconducting electronics, in which devices such as compact superconducting diodes that can perform signal rectification with low-energy operations are needed. In this article, we present our results of robust and symmetric-in-magnetic-field SDE in asymmetric superconducting quantum interference devices (SQUIDs) realized in high-quality Dirac semimetal Cd 3 As 2 thin film grown by the molecular beam epitaxy technique. Consistent with previous work, a zero magnetic field SDE is observed. Furthermore, the difference in switching current is independent of the strength and polarity of an out-plane magnetic field in the range of −10 and 10 mT. We speculate that this robust symmetric-in-field SDE in our Dirac semimetal SQUIDs is due to the formation of helical spin texture, theoretically predicted in Dirac semimetals.

Current-voltage characteristic↗
NASA NTRS1978

Preliminary results on the conversion of laser energy into electricity

A preliminary experiment was performed to investigate conversion of 10.6 micron laser energy to electrical energy via a laser-sustained argon plasma. Short-circuit currents of 0.7 A were measured between a thoriated-tungsten emitter and collector electrodes immersed in the laser-sustained argon plasma. Open-circuit voltages of about 1.5 V were inferred from the current-voltage load characteristics. The dominant mechanism of laser energy conversion is uncertain at this time. Much higher output powers appear possible.

Thompson, R. W.↗
NASA NTRS1971

Proximity effect between superconducting and normal metals

Electrical characteristics of thin films of tin vapor deposited on gold substrates are described. Favorable characteristics of these films include: (1) shiny and smooth finishes; (2) higher Josephson critical currents; (3) smaller electronic mean paths; and (4) consistent current-voltage curve shapes. One unfavorable characteristic is a much steeper increase of the Josephson critical current with decreasing temperature. The functional variation of the Josephson current with the control current is described. Two functional forms have been observed and a brief description as to possible mechanisms for this behavior have been included.

Meissner, H.↗
NASA NTRS1970

Constant current load matches impedances of electronic components

Constant current load with negative resistance characteristics actively compensates for impedance variations in circuit components. Through a current-voltage balancing operation the internal impedance of the diodes is maintained at a constant value. This constant current load circuit can be used in simple telemetry systems.

Alexander, R. M.↗
NASA NTRS1972

Weakly superconducting, thin-film structures as radiation detectors.

Measurements were taken with weakly superconducting quantum structures of the Notarys-Mercereau type, representing a thin superconductor film with a short region that is weakened in the sense that its transition temperature is lower than in the remaining portion of the film. The structure acts as a superconducting relaxation oscillator in which the supercurrent increases with time until the critical current of the weakened section is attained, at which moment the supercurrent decays and the cycle repeats. Under applied radiation, a series of constant-voltage steps appears in the current-voltage curve, and the size of the steps varies periodically with the amplitude of applied radiation. Measurements of the response characteristics were made in the frequency range of 10 to 450 MHz.

Kirschman, R. K.↗
DOE OSTI2025

Diagnosis of PV Cell Antireflective Coating Degradation Resulting From Hot-Humid High-Voltage Potential Aging

Corrosion of the antireflective coating on a photovoltaic cell ("ARc corrosion") has previously been observed in studies using hot-humid test conditions with external high-voltage (HV) bias. This study primarily focuses on known vulnerable legacy aluminum back surface field cells in mini-modules (MiMos) put through comparative stepped stress tests. Each cell type had MiMos at +1500 V, -1500 V, or unbiased ("Voc") potential, which were sequentially subjected to test conditions of 60 degrees C/60% relative humidity (RH) for 96 h, as in International Electrotechnical Commission Technical Specification 62804-1; 70 degrees C/70% RH for 200 h; and 85 degrees C/85% RH for 200 h. Characterizations at each step included visual camera and electroluminescence (EL) imaging, colorimetry, and current-voltage curve tracing. Final characterizations included: Suns-Voc, spatial mapping of external quantum efficiency, high-resolution photoluminescence, EL, and dark lock-in thermography imaging. Forensics were performed on extracted cores, including scanning electron microscopy (SEM) with energy-dispersive X-ray spectroscopy (EDS), X-ray photoelectron spectroscopy, and scanning Auger microscopy (SAM). Forensics were also conducted on MiMos from previous studies that underwent stepped HV aging and separate outdoor aged full-sized modules. ARc corrosion was specifically seen for the glass/encapsulant/cell side of the +1500 V (HV+) stressed MiMos and modules. Appearance, color, and reflectance were the most distinguishing characteristics relative to glass corrosion, gridline corrosion and delamination, and other concurrent degradation modes. SEM/EDS and SAM identified the conversion of silicon nitride to hydrated silica, hydrous silica, or hydrated amorphous silica, which preferentially occurred at the edges and tips of the pyramidal textured cell surface.

14 SOLAR ENERGY↗
DOE OSTI2025

Diagnosis of PV Cell Antireflective Coating Degradation Resulting from Hot-Humid, High Voltage Potential Aging

Corrosion of the antireflective coating on a photovoltaic cell ("ARc corrosion") has previously been observed in studies using hot-humid test conditions with external high-voltage (HV) bias. This study primarily focuses on known vulnerable, legacy aluminum back surface field (Al-BSF) cells in mini-modules (MiMos) put through comparative stepped stress tests. Each cell type had MiMos at +1500 V, -1500 V, or unbiased ("Voc") potential, which were sequentially subjected to test conditions of 60deg C/60% relative humidity (RH) for 96 h, as in International Electrotechnical Commission (IEC) Technical Specification 62804-1; 70 deg C/70% RH for 200 h; and 85 deg C/85% RH for 200 h. Characterizations at each step included visual camera and electroluminescence (EL) imaging, colorimetry, and current-voltage (I-V) curve tracing. Final characterizations included: Suns-Voc; spatial mapping of external quantum efficiency (EQE); high-resolution photoluminescence (PL), EL, and dark lock-in thermography (DLIT) imaging. Forensics were performed on extracted cores, including scanning electron microscopy (SEM) with energy-dispersive X-ray spectroscopy (EDS), X-ray photoelectron spectroscopy (XPS), and scanning Auger microscopy (SAM). Forensics were also conducted on MiMos from previous studies that underwent stepped HV aging and separate outdoor aged full-sized modules. ARc corrosion was specifically seen for the glass/encapsulant/cell side of the +1500V (HV+) stressed MiMos and modules. Appearance, color, and reflectance were the most distinguishing characteristics relative to glass corrosion, gridline-corrosion and -delamination as well as other concurrent degradation modes. SEM/EDS and SAM identified conversion of silicon nitride to hydrated silica, hydrous silica, or hydrated amorphous silica, which preferentially occurred at the edges and tips of the pyramidal textured cell surface.

14 SOLAR ENERGY↗
DOE OSTI2026

Multiscale Characterization of Electrode-Induced Degradation in Perovskite Solar Cells

The stability of metal-halide-perovskite (MHP) solar cells must be understood and improved for the commercial viability of MHP technologies. Here, we apply multiscale characterization methods to study degradation modes, specifically electrode corrosion, for p-i-n MHP partial device stacks and full devices that are stored in the dark under an inert atmosphere. Our multiscale characterization approaches include full-device electro-optical performance using current-voltage (JV) curves and spatial imaging with electroluminescence (EL) and photoluminescence (PL). We further correlate interface properties using cross-sectional Kelvin probe force microscopy, which maps the nanoscale electric field properties, and electron microscopy, which demonstrates structural and chemical features. Devices stored as a full device stack degrade primarily by metal (Ag) electrode diffusion into the absorber, with formation of AgI byproducts and Ag accumulation near the indium tin oxide (ITO) contact. This causes decomposition of the perovskite absorber domains, loss of the potential drop at the electron transport layer (ETL)/perovskite interface near the metal contact, and increased equivalent resistance at the perovskite/hole transport layer (HTL) interface near the ITO contact. The devices stored without metal show a different degradation pathway dominated by corrosion of the ITO, creating voids at the ITO electrode surface with diffusion of In and Sn into the absorber. We conclude that metal electrode-induced degradation is the most severe degradation pathway under dark storage, but that ITO corrosion and absorber instability must also be mitigated. We further demonstrate mitigation of these degradation pathways by changes to the device stack, including a SnO x blocking layer at the ETL side and replacing ITO with FTO at the HTL side. These results provide a useful demonstration of specific dark degradation pathways at each electrode interface, as well as a unique multiscale example that links degradation of chemical, structural, and electrical interface properties to the full-device electro-optical characteristics.

14 SOLAR ENERGY↗