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At least 73 records · Page 4
All sourcesNASA NTRSDOE OSTI
NASA NTRS2000

Accelerated thermal and mechanical testing of CSP assemblies

Chip Scale Packages (CSP) are now widely used for many electronic applications including portable and telecommunication products. A test vehicle (TV-1) with eleven package types and pitches was built and tested by the JPL MicrotypeBGA Consortium during 1997 to 1999. Lessons learned by the team were published as a guidelines document for industry use. The finer pitch CSP packages which recently became available were indluded in the next test vehicle of the JPL CSP Consortium.

Chip Scale Package CSP thermal cycle fatigue solde↗
DOE OSTI2021

Efficient and tunable blue light generation using lithium niobate nonlinear photonics

Thin-film lithium niobate (LN) has recently emerged as a playground for chip-scale nonlinear optics and leads to efficient frequency conversions from near-infrared to near-visible bands. For many nonlinear and quantum photonics applications, it is desirable to operate deep into the visible band within LN's transparency window. However, the strong material dispersion at short wavelengths makes phase-matching difficult, necessitating sub-micrometer scale control of domain structures for efficient phase-matching. Here, we report the operation of thin film LN in the blue wavelength and high fidelity poling of the thin-film LN waveguide to this regime. As a result, quasi-phase matching is realized between IR (871 nm) and blue (435.5 nm) wavelengths in a straight waveguide and prompts strong blue light generation with a conversion efficiency (1040% ± 140%/W). This blue second harmonic generator exhibits stable temperature tunability, which is important for applications that require precise frequency alignment, such as atomic clocks.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2020

Silicon photonic chip for 16-channel wavelength division (de-)multiplexing in the O-band

We experimentally demonstrate a silicon photonic chip-scale 16-channel wavelength division multiplexer (WDM) operating in the O-band. The silicon photonic chip consists of a common-input bus waveguide integrated with a sequence of 16 spectral add-drop filters implemented by 4-port contra-directional Bragg couplers and resonant cladding modulated perturbations. The combination of these features reduces the spectral bandwidth of the filters and improves the crosstalk. An apodization of the cladding modulated perturbations between the bus and the add/drop waveguides is used to optimize the strength of the coupling coefficient in the propagation direction to reduce the intra-channel crosstalk on adjacent channels. The fabricated chip was validated experimentally with a measured intra-channel crosstalk of ∼−18.9 dB for a channel spacing of 2.6 nm. The multiplexer/demultiplexer chip was also experimentally tested with a 10 Gbps data waveform. The resulting eye-pattern indicates that this approach is suitable for datacenter WDM-based interconnects in the O-band with large aggregate bandwidths.

Davis, Jordan A. (ORCID:0000000343483295)↗
DOE OSTI2025

Incubating advances in integrated photonics with emerging sensing and computational capabilities

As photonic technologies grow in multidimensional aspects, integrated photonics holds a unique position and continuously presents enormous possibilities for research communities. Applications include data centers, environmental monitoring, medical diagnosis, and highly compact communication components, with further possibilities continuously growing. Herein, we review state-of-the-art integrated photonic on-chip sensors that operate in the visible to mid-infrared wavelength region on various material platforms. Among the different materials, architectures, and technologies leading the way for on-chip sensors, we discuss the optical sensing principles that are commonly applied to biochemical and gas sensing. Our focus is on passive optical waveguides, including dispersion-engineered metamaterial-based structures, which are essential for enhancing the interaction between light and analytes in chip-scale sensors. We harness a diverse array of cutting-edge sensing technologies, heralding a revolutionary on-chip sensing paradigm. Our arsenal includes refractive-index-based sensing, plasmonics, and spectroscopy, which forge an unparalleled foundation for innovation and precision. Furthermore, we include a brief discussion of recent trends and computational concepts, incorporating Artificial Intelligence & Machine Learning (AI/ML) and deep learning approaches over the past few years to improve the qualitative and quantitative analysis of sensor measurements.

Jain, Sourabh (ORCID:0000000279923275)↗
DOE OSTI2021

Ultralow-threshold thin-film lithium niobate optical parametric oscillator

Materials with strong second-order ( χ <#comment/> ( 2 ) ) optical nonlinearity, especially lithium niobate, play a critical role in building optical parametric oscillators (OPOs). However, chip-scale integration of low-loss χ <#comment/> ( 2 ) materials remains challenging and limits the threshold power of on-chip χ <#comment/> ( 2 ) OPO. Here we report an on-chip lithium niobate optical parametric oscillator at the telecom wavelengths using a quasi-phase-matched, high-quality microring resonator, whose threshold power ( ∼ <#comment/> 30 µ <#comment/> W ) is 400 times lower than that in previous χ <#comment/> ( 2 ) integrated photonics platforms. An on-chip power conversion efficiency of 11% is obtained from pump to signal and idler fields at a pump power of 93 µW. The OPO wavelength tuning is achieved by varying the pump frequency and chip temperature. With the lowest power threshold among all on-chip OPOs demonstrated so far, as well as advantages including high conversion efficiency, flexibility in quasi-phase-matching, and device scalability, the thin-film lithium niobate OPO opens new opportunities for chip-based tunable classical and quantum light sources and provides a potential platform for realizing photonic neural networks.

Lu, Juanjuan (ORCID:0000000319389119)↗
DOE OSTI2024

Single-mode squeezed-light generation and tomography with an integrated optical parametric oscillator

Quantum optical technologies promise advances in sensing, computing, and communication. A key resource is squeezed light, where quantum noise is redistributed between optical quadratures. We introduce a monolithic, chip-scale platform that exploits the χ (2) nonlinearity of a thin-film lithium niobate (TFLN) resonator device to efficiently generate squeezed states of light. Our system integrates all essential components—except for the laser and two detectors—on a single chip with an area of one square centimeter, reducing the size, operational complexity, and power consumption associated with conventional setups. Using the balanced homodyne measurement subsystem that we implemented on the same chip, we measure a squeezing of 0.55 decibels and an anti-squeezing of 1.55 decibels. We use 20 milliwatts of input power to generate the parametric oscillator pump field by using second harmonic generation on the same chip. Our work represents a step toward compact and efficient quantum optical systems posed to leverage the rapid advances in integrated nonlinear and quantum photonics.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2021

On-chip optical tweezers based on freeform optics

Since its advent in the 1970s, optical tweezers have been widely deployed as a preferred non-contact technique for manipulating microscale objects. On-chip integrated optical tweezers, which afford significant size, weight, and cost benefits, have been implemented, relying upon near-field evanescent waves. As a result, these tweezers are only capable of manipulation in near-surface regions and often demand high power since the evanescent interactions are relatively weak. We introduce on-chip optical tweezers based on freeform micro-optics, which comprise optical reflectors or refractive lenses integrated on waveguide end facets via two-photon polymerization. The freeform optical design offers unprecedented degrees of freedom to design optical fields with strong three-dimensional intensity gradients, useful for trapping and manipulating suspended particles in an integrated chip-scale platform. We demonstrate the design, fabrication, and measurement of both reflective and refractive micro-optical tweezers. The reflective tweezers feature a remarkably low trapping threshold power, and the refractive tweezers are particularly useful for multiparticle trapping and interparticle interaction analysis. Our integrated micro-optical tweezers uniquely combine a compact footprint, broadband operation, high trapping efficiency, and scalable integration with planar photonic circuits. This class of tweezers is promising for on-chip sensing, cell assembly, particle dynamics analysis, and ion trapping.

Yu, Shaoliang (ORCID:000000026072425X)↗
DOE OSTI2022

High-quality microresonators in the longwave infrared based on native germanium

The longwave infrared (LWIR) region of the spectrum spans 8 to 14 μm and enables high-performance sensing and imaging for detection, ranging, and monitoring. Chip-scale LWIR photonics has enormous potential for real-time environmental monitoring, explosive detection, and biomedicine. However, realizing technologies such as precision sensors and broadband frequency combs requires ultra low-loss and low-dispersion components, which have so far remained elusive in this regime. Here, we use native germanium to demonstrate the first high-quality microresonators in the LWIR. These microresonators are coupled to partially-suspended Ge waveguides on a separate glass chip, allowing for the first unambiguous measurements of isolated linewidths. At 8 μm, we measured losses of 0.5 dB/cm and intrinsic quality (Q) factors of 2.5 × 10 5 , nearly two orders of magnitude higher than prior LWIR resonators. Our work portends the development of novel sensing and nonlinear photonics in the LWIR regime.

47 OTHER INSTRUMENTATION↗
DOE OSTI2023

Integrated photonic molecule Brillouin laser with a high-power sub-100-mHz fundamental linewidth

Photonic integrated lasers with an ultra-low fundamental linewidth and a high output power are important for precision atomic and quantum applications, high-capacity communications, and fiber sensing, yet wafer-scale solutions have remained elusive. Here we report an integrated stimulated Brillouin laser (SBL), based on a photonic molecule coupled resonator design, that achieves a sub-100-mHz fundamental linewidth with greater than 10-mW output power in the C band, fabricated on a 200-mm silicon nitride (Si 3 N 4 ) CMOS-foundry compatible wafer-scale platform. The photonic molecule design is used to suppress the second-order Stokes (S2) emission, allowing the primary lasing mode to increase with the pump power without phase noise feedback from higher Stokes orders. The nested waveguide resonators have a 184 million intrinsic and 92 million loaded Q, over an order of magnitude improvement over prior photonic molecules, enabling precision resonance splitting of 198 MHz at the S2 frequency. We demonstrate S2-suppressed single-mode SBL with a minimum fundamental linewidth of 71±18 mHz, corresponding to a 23±6-mHz 2 /Hz white-frequency-noise floor, over an order of magnitude lower than prior integrated SBLs, with an ∼11-mW output power and 2.3-mW threshold power. The frequency noise reaches the resonator-intrinsic thermo-refractive noise from 2-kHz to 1-MHz offset. The laser phase noise reaches −155 dBc/Hz at 10-MHz offset. The performance of this chip-scale SBL shows promise not only to improve the reliability and reduce size and cost but also to enable new precision experiments that require the high-speed manipulation, control, and interrogation of atoms and qubits. Realization in the silicon nitride ultra-low loss platform is adaptable to a wide range of wavelengths from the visible to infrared and enables integration with other components for systems-on-chip solutions for a wide range of precision scientific and engineering applications including quantum sensing, gravitometers, atom interferometers, precision metrology, optical atomic clocks, and ultra-low noise microwave generation.

Liu, Kaikai (ORCID:0000000213609646)↗
DOE OSTI2025

Beam combining of high-power terahertz lasers with semiconductor metasurface gratings

Spectral beam combining (SBC) of an array of single-mode lasers has the potential for realizing a chip-scale electrically tunable multispectral laser source without any moving parts and with emission at closely spaced discrete frequencies. Here, we demonstrate SBC of an array of single-mode THz quantum-cascade lasers (QCLs) with small frequency spacing. Semiconductor-based metasurface THz blazed gratings are developed for integration with QCLs in a compact cryocooler setup. Single-lobed beams of four QCLs emitting around 3.2 THz and spectrally separated by ~14 GHz are combined to achieve collinear propagation of spatially overlapped and collimated beams in the far field with ≲ 0.1° of pointing error. Peak optical power in the range 50–100 mW is detected from each of the QCLs after combining. The dense frequency spacing in our method provides a pathway to incorporate tens of QCLs on a chip to realize a high-power discretely tunable THz laser source for applications in THz spectroscopy.

Jia, Fei [Lehigh Univ., Bethlehem, PA (United Stat↗
DOE OSTI2024

Fundamental bandwidth limits and shaping of frequency-modulated combs

Frequency-modulated (FM) combs based on active cavities like quantum cascade lasers have recently emerged as promising light sources in many spectral regions. Unlike passive modelocking, which generates amplitude modulation using the field’s amplitude, FM comb formation relies on the generation of phase modulation from the field’s phase. They can therefore be regarded as a phase-domain version of passive modelocking. However, while the ultimate scaling laws of passive modelocking have long been known—Haus showed in 1975 that pulses modelocked by a fast saturable absorber have a bandwidth proportional to effective gain bandwidth—the limits of FM combs have been much less clear. Here, we show that FM combs based on fast gain media are governed by the same fundamental limits, producing combs whose bandwidths are linear in the effective gain bandwidth. Not only do we show theoretically that the diffusive effect of gain curvature limits comb bandwidth, but we also show experimentally how this limit can be increased. By adding carefully designed resonant-loss structures that are evanescently coupled to the cavity of a terahertz laser, we reduce the curvature and increase the effective gain bandwidth of the laser, demonstrating bandwidth enhancement. Our results can better enable the creation of active chip-scale combs and be applied to a wide array of cavity geometries.

47 OTHER INSTRUMENTATION↗
NASA NTRS2013

Miniature Trace Gas Detector Based on Microfabricated Optical Resonators

While a variety of techniques exist to monitor trace gases, methods relying on absorption of laser light are the most commonly used in terrestrial applications. Cavity-enhanced absorption techniques typically use high-reflectivity mirrors to form a resonant cavity, inside of which a sample gas can be analyzed. The effective absorption length is augmented by the cavity's high quality factor, or Q, because the light reflects many times between the mirrors. The sensitivity of such mirror-based sensors scales with size, generally making them somewhat bulky in volume. Also, specialized coatings for the high-reflectivity mirrors have limited bandwidth (typically just a few nanometers), and the delicate mirror surfaces can easily be degraded by dust or chemical films. As a highly sensitive and compact alternative, JPL is developing a novel trace gas sensor based on a monolithic optical resonator structure that has been modified such that a gas sample can be directly injected into the cavity. This device concept combines ultra-high Q optical whispering gallery mode resonators (WGMR) with microfabrication technology used in the semiconductor industry. For direct access to the optical mode inside a resonator, material can be precisely milled from its perimeter, creating an open gap within the WGMR. Within this open notch, the full optical mode of the resonator can be accessed. While this modification may limit the obtainable Q, calculations show that the reduction is not significant enough to outweigh its utility for trace gas detection. The notch can be milled from the high- Q crystalline WGMR with a focused ion beam (FIB) instrument with resolution much finer than an optical wavelength, thereby minimizing scattering losses and preserving the optical quality. Initial experimental demonstrations have shown that these opened cavities still support high-Q whispering gallery modes. This technology could provide ultrasensitive detection of a variety of molecular species in an extremely compact and robust package. With this type of modified WGMR, one can inject a gas sample into the open gap, allowing highly sensitive trace molecule detection within a roughly 1-cm volume. Other critical components of the instrument, such as the detector and a semiconductor laser, could be directly packaged with the resonator so as to not significantly increase the size of the device. Besides its low mass, volume, and power consumption, the monolithic design makes these resonators intrinsically robust devices, capable of handling significant temperature excursions, without moving parts to wear out or delicate coatings that can be easily damaged. A sensor could integrate with microfluidics technology for a chip-scale device. It could be mounted to the end of a deployable arm, or inserted into a borehole. Also, a network of individual sensors could be dispersed to monitor conditions over a wide region

Aveline, David C.↗
DOE OSTI2022

Smart material based multilayered microbeam structures for spatial self-deployment and reconfiguration: A residual stress approach

Alleviation of the potentially damaging effects induced by residual stresses was comprehensively investigated in previous research. Here, this paper, however, presents a spatially self-deployable and reconfigurable multilayered microbeam which takes advantage of residual stresses and shape memory effects. Reconfigurable mechanism of a typical four-layered microbeam composed of Pt\Ni 50 Ti 50 \Ni 50 Ti 50 \Pt is introduced, followed by analytical modeling of the maximum distance of the self-deployed gap as functions of variable structural and material parameters, including compressive residual stress in Pt layers and tensile residual stress in Ni 50 Ti 50 layers. Analytical solutions given by the static model agree well with the results obtained via finite element models (FEMs). Fabrication, characterization, and in-situ experiments were carried out to validate the feasibility of deployment of the as-released four-layered microbeam. The maximum distance of the gap was measured to be 41.39 μm at 20 °C, which could be increased to 51.73 μm thanks to controllable reconfiguration driven by shape memory effects. Theoretical analysis of such self-deployment and reconfiguration suggested a tensile residual stress increase by 52 MPa in Ni 50 Ti 50 layers. The multilayered microbeam structure with capabilities of self-deployment and reconfiguration offers great potential for various emerging applications, such as micro robotics, medical drug delivery devices, and intelligent chip scale spacecraft.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Economic and embodied energy analysis of integrated circuit manufacturing processes

Integrated circuits (ICs) are the fundamental microelectronic building blocks of typical information and communication technology (ICT) devices such as laptops and smartphone. With the emergence of faster and cheaper low-power ICs for the growing ICT market, there is a limited information on their manufacturing energy and economic impacts owing to the lack of recurrent upgradation of proprietary IC manufacturing process data. In this work, economic and life cycle energy assessments (LCAs) of IC manufacturing and assembly processes were conducted using the latest bill of materials (BOM) manufacturing data in a state-of-the-art IC manufacturing cost software tool developed by IC Knowledge, LLC. IC manufacturing cost was estimated to be $\$$1.00-$\$$5.00/cm 2 ; the high-end cost represents the most advanced 3D NAND IC technology with the Wafer Level Chip Scale Package cost of $4/cm 2 . Total cumulative energy demand (CED) estimates of IC manufacturing using the OpenLCA software ranged from 9 to 38 MJ/cm 2 or 56–235 BJ/month with the largest share (~ 75%) from on-site energy. The IC manufacturing CED is projected to increase with the progress in IC technology node, which has increased by more than two times for technology node evolution from 110 to 14 nm. Furthermore, the representative detailed BOM data were considered to reduce the CED uncertainties of the estimated standard deviation of 35%- 42%.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2026

Proton Conducting Silicon Oxide Membranes as a Fluorine Free Alternative to Nafion for Low Temperature Water Electrolysis

Driven by environmental and health concerns related to per- and polyfluoroalkyl substances (PFAS), there has been growing interest in developing fluorine-free proton (H + ) exchange membrane (PEM) materials for fuel cells and water electrolyzers. In this study, we present a side-by-side comparison of the key transport properties of submicron thick, PFAS-free amorphous silicon dioxide (SiO 2 ) membranes to Nafion, a fluorinated polymer electrolyte membrane that represents the industry standard for PEM fuel cells and electrolyzers. Here, measurements of proton (H + ) conductivity (σ H + ), hydrogen (H 2 ) permeability (P H 2 ), and electrical resistivity (ρ e – ) were conducted using model thin films comprised of SiO 2 membranes deposited by atomic layer deposition (ALD). Although the H + conductivity of the SiO 2 membranes is 2–3 orders of magnitude lower than Nafion, the addition of phosphorus dopants (PO x ) improves H + conductivity such that the area specific membrane resistance of thin (<50 nm) PO x -doped SiO 2 membranes is more than an order of magnitude lower than Nafion-117. Importantly, the safe operation of such nanoscale membranes within a PEM electrolyzer is feasible thanks to the low H 2 permeability of dense SiO 2 -based membranes, which are predicted to limit H 2 crossover rates to acceptable levels for pressures up to ≈ 100 bar. As a proof-of-principle demonstration, a chip-scale water electrolyzer based on 100 nm thick PO x -SiO 2 membrane is shown to achieve a current density of 2 A cm –2 at a potential of 2.5 V. If this technology can be successfully scaled up, H + conducting oxide membranes offer an attractive PFAS-free alternative to Nafion for efficient and durable water electrolysis and fuel cell technologies.

Nafion↗
DOE OSTI2026

Slow-Light Mid-IR Silicon Photonic Chips for NO 2 and CH 4 Gas Detection

A compact, chip-scale mid-infrared gas sensor is demonstrated, leveraging a two-dimensional photonic crystal waveguide (PCW) fabricated on a silicon-on-insulator (SOI) platform. The PCW comprises a hexagonal lattice with lattice constant a = 860 nm and hole radius r = 0.22a, incorporating a central line defect of reduced-radius holes (r s = 0.7r) to induce slow-light propagation near the photonic band edge with a group index of approximately 73, thereby enhancing light-matter interaction. The sensor operates at fundamental absorption wavelengths of 3.42 μm for nitrogen dioxide (NO 2 ) and 3.40 μm for methane (CH 4 ), utilizing the strongest molecular vibrational transitions for maximum sensitivity. Experimental validation was conducted using dynamically diluted gas mixtures generated by mass flow controllers, with signal acquisition performed by a liquid nitrogen-cooled InSb detector. For NO 2 , the sensor exhibited excellent linear response over 5–25 ppm (part per million) with coefficient of determination R 2 = 0.9934, achieving a detection limit of 210 ppb (part per billion)─representing the first reported silicon photonic-based NO 2 detection. For CH 4 , exposure to 25 ppm resulted in a 6.4% decrease in transmitted intensity, demonstrating multigas sensing capability. The CMOS-compatible fabrication process and compact 3 mm device footprint establish this SOI-PCW platform as a scalable, low-power solution for integrated mid-infrared gas sensing, with significant potential for environmental monitoring and industrial safety applications.

Crystals↗
DOE OSTI2021

Frequency comb ptychoscopy

Multiheterodyne techniques using frequency combs—radiation sources whose lines are perfectly evenly-spaced—have revolutionized science. By beating sources with the many lines of a comb, their spectra are recovered. Even so, these approaches are fundamentally limited to probing coherent sources, such as lasers. They are unable to measure most spectra that occur in nature. Here we present frequency comb ptychoscopy, a technique that allows for the spectrum of any complex broadband source to be retrieved using a comb. In this approach, the spectrum is reconstructed by unfolding the simultaneous beating of a source with each comb line. We demonstrate this both theoretically and experimentally, at microwave frequencies. This approach can reconstruct the spectrum of nearly any complex source to high resolution, and the speed, resolution, and generality of this technique will allow chip-scale frequency combs to have an impact in a wide swath of new applications, such as remote sensing and passive spectral imaging.

42 ENGINEERING↗
DOE OSTI2022

Ultra-low-power second-order nonlinear optics on a chip

Second-order nonlinear optical processes convert light from one wavelength to another and generate quantum entanglement. Creating chip-scale devices to efficiently control these interactions greatly increases the reach of photonics. Existing silicon-based photonic circuits utilize the third-order optical nonlinearity, but an analogous integrated platform for second-order nonlinear optics remains an outstanding challenge. Here we demonstrate efficient frequency doubling and parametric oscillation with a threshold of tens of micro-watts in an integrated thin-film lithium niobate photonic circuit. We achieve degenerate and non-degenerate operation of the parametric oscillator at room temperature and tune its emission over one terahertz by varying the pump frequency by hundreds of megahertz. Finally, we observe cascaded second-order processes that result in parametric oscillation. These resonant second-order nonlinear circuits will form a crucial part of the emerging nonlinear and quantum photonics platforms.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗