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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 73 records · Page 4
All sourcesNASA NTRSDOE OSTI
NASA NTRS1972

Junction characteristics of silicon solar cells. Part 1: Nonilluminated case

Precise values of the reverse saturation currents in silicon solar cells and magnitudes of the diffusion and recombination components have been obtained. The recombination current as well as leakage current due to shunting are shown to be nonuniform across the cell. The diffusion lengths calculated from the diffusion current components agree well with diffusion lengths measured independently in similar material. Models are given demonstrating the effect of recombination and shunting currents on the dark current-voltage characteristics of solar cells.

Stirn, R. J.↗
NASA NTRS1981

Study of the effects of impurities on the properties of silicon solar cell

The effect of defects across the back-surface-field junction on the performance of high efficiency and thin solar cells, using a developed-perimeter device model for the three-dimensional defects is investigated. Significant degradation of open-circuit voltage can occur even if there are only a few defects distributed in the bulk of the solar cell. Two features in the thickness dependences of the fill factor and efficiency in impurity-doped back-surface-field solar cells are discovered in the exact numerical solution which are associated with the high injection level effect in the base and not predicted by the low-level analytical theory. What are believed to be the most accurate recombination parameters at the Ti center to date are also given and a theory is developed which is capable of distinguishing an acceptor-like deep level from a donor-like deep level using the measured values of the thermal emission and capture cross sections.

Sah, C. T.↗
NASA NTRS1981

Study of the effects of impurities on the properties of silicon materials and performance of silicon solar cell

The effect of silicon film thickness on the energy conversion efficiency of a back surface field solar cell is investigated. A computer-aided design study on the dependence of efficiency peaks on the concentrations of the recombination and dopant impurities is presented. The illuminated current voltage characteristics of over 100 cell designs were obtained using the transmission line circuit model to numerically solve the Shockley Equations. Using an AM1 efficiency of 17% as a target value, it is shown that the efficiency versus thickness dependence has a broad maximum which varies less than 1% over more than three-to-one range of cell thickness from 30 to 100 microns. Optical reflecting back surface will give only a slight improvement of AM1 efficiency, about 0.7%, in this thickness range. The sensitive dependence of efficiency on patchiness across the back surface field, low high junction in thin cells is noted.

Sah, C. T.↗
NASA NTRS1986

An IBM PC-based math model for space station solar array simulation

This report discusses and documents the design, development, and verification of a microcomputer-based solar cell math model for simulating the Space Station's solar array Initial Operational Capability (IOC) reference configuration. The array model is developed utilizing a linear solar cell dc math model requiring only five input parameters: short circuit current, open circuit voltage, maximum power voltage, maximum power current, and orbit inclination. The accuracy of this model is investigated using actual solar array on orbit electrical data derived from the Solar Array Flight Experiment/Dynamic Augmentation Experiment (SAFE/DAE), conducted during the STS-41D mission. This simulator provides real-time simulated performance data during the steady state portion of the Space Station orbit (i.e., array fully exposed to sunlight). Eclipse to sunlight transients and shadowing effects are not included in the analysis, but are discussed briefly. Integrating the Solar Array Simulator (SAS) into the Power Management and Distribution (PMAD) subsystem is also discussed.

Emanuel, E. M.↗
NASA NTRS1997

Behavior of 2-Cell CPV Ni-H2 Battery During Pulse Discharge

A study was carried out to determine the transient voltage behavior of the 2-cell CPV nickel-hydrogen battery with the objective of using the results as a basis for mathematical modeling. The 2-cell CPV battery which is manufactured by Eagle Picher, Inc. for the GOES program yields 18.5 Ah at C/2 rate of discharge at 10 C with a mid-discharge voltage of 2.514 V. The capacity increased with decrease of temperature and a maximum capacity of 22 Ah was obtained at -5 C. The pulse tests consisted of obtaining the voltage profile in the first 20 milliseconds of the one minute pulse discharge at 37 A and pulse discharge was repeated as a function of state- of- charge. The pulse test at 10 C and 20 C provided voltage profiles with the expected decrease in voltage as the pulse was applied. The end of pulse voltage decreased with the state-of-charge. The battery voltage was above 2V at the end of the one-minute pulse at 8 % state-of-charge at 10 C. The voltage profile during the 37 A pulse discharge consists of an initial drop in voltage which was independent of the state of charge. The invariability in the value for the initial drop in voltage with state of charge is a very important observation. The results show that towards the end of discharge the dominant resistance is not ohmic in nature. It could be hypothesized from the nature of the voltage transients that the dominant mechanism towards the end of discharge is proton diffusion. The study also shows that the dominant resistance in the voltage plateau during discharge is activation polarization.

Vaidyanathan, Hari↗
NASA NTRS1998

Behavior of 2-Cell CPV Ni-H2 Battery During Pulse Discharge

A study was carried out to determine the transient voltage behavior of the 2-cell CPV nickel-hydrogen battery with the objective of using the results as a basis for mathematical modeling. The 2-cell CPV battery which is manufactured by Eagle Picher, Inc. for the GOES program yields 18.5 Ah at C/2 rate of discharge at 10 C with a mid-discharge voltage of 2.514 V. The capacity increased with decrease of temperature and a maximum capacity of 22 Ah was obtained at -5 C. The pulse tests consisted of obtaining the voltage profile in the first 20 milliseconds of the one minute pulse discharge at 37 A and pulse discharge was repeated as a function of state-of-charge. The pulse test at 10 C and 20 C provided voltage profiles with the expected decrease in voltage as the pulse was applied. The end of pulse voltage decreased with the state-of-charge. The battery voltage was above 2V at the end of the one-minute pulse at 8 % state-of-charge at 10 C. The voltage profile during the 37 A pulse discharge consists of an initial drop in voltage which was independent of the state of charge. The invariability in the value for the initial drop in voltage with state of charge is a very important observation. The results show that towards the end of discharge the dominant resistance is not ohmic in nature. It could be hypothesized from the nature of the voltage transients that the dominant mechanism towards the end of discharge is proton diffusion. The study also shows that the dominant resistance in the voltage plateau during discharge is activation polarization.

Vaidyanathan, Hari↗
NASA NTRS1997

Behavior of 2 Cell CPV NI-H2 Battery During Pulse Discharge

A study was carried out to determine the transient voltage behavior of the 2-cell CPV nickel-hydrogen battery with the objective of using the results as a basis for mathematical modeling. The 2-cell CPV battery which is manufactured by Eagle Picher, Inc. for the GOES program yields 18.5 Ah at C/2 rate of discharge at 10 C with a mid-discharge voltage of 2.514 V. The capacity increased with decrease of temperature and a maximum capacity of 22 Ah was obtained at - 5 C. The pulse test consisted of obtaining the voltage profile in the first 20 milliseconds of the one minute pulse discharge at 37 A and pulse discharge was repeated as a function of state-of-charge. The pulse test at 10 C and 20 C provided voltage profiles with the expected decrease in voltage as the pulse was applied. The end of pulse voltage decreased with the state-of-charge. The battery voltage was above 2V at the end of the one-minute pulse at 12% state-of-charge at 10 C. The voltage profile during the 37 A pulse discharge consists of an initial drop in voltage which was independent of the state of charge. The invariability in the value for the initial drop in voltage with state of charge is a very important observation and indicates that towards the end of discharge the dominant resistance is not ohmic in nature. It could be hypothesized from the nature of the voltage transients that the dominant mechanism towards the end of discharge is proton diffusion. The study also shows that the dominant resistance in the voltage plateau during discharge is activation polarization.

Gopalakrishna, M. Rao↗
NASA NTRS1981

Direct conversion of light to radio frequency energy

A description is presented of the test results obtained with the latest models of the phototron. The phototron was conceived as a replacement for the high voltage solar cell-high power klystron combination for the solar power satellite concept. Physically, the phototron is a cylindrical evacuated glass tube with a photocathode, two grids, and a reflector electrode in a planar configuration. The phototron can be operated either in a biased mode where a low voltage is used to accelerate the electron beam produced by the photocathode or in an unbiased mode referred to as self-oscillation. The device is easily modulated by light input or voltage to broadcast in AM or FM. The range of operation of the present test model phototrons is from 2 to 200 MHz.

Freeman, J. W.↗
NASA NTRS1982

Effect of thickness on silicon solar cell efficiency

A computer-aided-design study on the dependence of the efficiency peak of a back-surface field solar cell on the concentrations of the recombination and dopant impurities is presented. The illuminated current-voltage characteristics of more than 100 cell designs are obtained using the transmission line circuit model to numerically solve the Shockley equations. Using an AM 1 efficiency of 17% as a target value, it is shown that the efficiency versus thickness dependence has a broad maximum which varies by less than 1% over more than a three-to-one range of cell thicknesses from 30 to 100 microns. An optically reflecting back surface will give only a slight improvement of AM 1 efficiency, about 0.7%, in this thickness range. Attention is given to the dependence of the efficiency on patchiness across the back-surface field low-high junction in thin cells.

Sah, C.-T.↗
NASA NTRS1991

Data analysis and interpretation related to space system/environment interactions at LEO altitude

Several studies made on the interaction of active systems with the LEO space environment experienced from orbital or suborbital platforms are covered. The issue of high voltage space interaction is covered by theoretical modeling studies of the interaction of charged solar cell arrays with the ionospheric plasma. The theoretical studies were complemented by experimental measurements made in a vacuum chamber. The other active system studied was the emission of effluent from a space platform. In one study the emission of plasma into the LEO environment was studied by using initially a 2-D model, and then extending this model to 3-D to correctly take account of plasma motion parallel to the geomagnetic field. The other effluent studies related to the releases of neutral gas from an orbiting platform. One model which was extended and used determined the density, velocity, and energy of both an effluent gas and the ambient upper atmospheric gases over a large volume around the platform. This model was adapted to study both ambient and contaminant distributions around smaller objects in the orbital frame of reference with scale sizes of 1 m. The other effluent studies related to the interaction of the released neutral gas with the ambient ionospheric plasma. An electrostatic model was used to help understand anomalously high plasma densities measured at times in the vicinity of the space shuttle orbiter.

Raitt, W. John↗
NASA NTRS2004

Lithium-Ion Verification Test Program

In order to assess the capabilities of current aerospace lithium-ion cells to perform long-term NASA missions, low-earth-orbits (LEO) testing to evaluate long-term cycle life was initiated. A flexible program was developed at NASA Glenn Research Center to enable assessment of technology developments as they occur as well as provide information about different cell vendors and cell designs. Following extensive characterization testing, cells are tested using LEO charge and discharge profiles under ten different combinations of test conditions that were statistically chosen to determine the effects of depth-of-discharge, temperature, and end-of-charge voltage on LEO cycle life. Four cells from each vendor are tested at each specific combination of conditions. Conditions included in the test matrix are depth-of-discharges of 20%, 30, 35%, and 40%; temperatures of 20, 30, and 40 C; and end-of-charge voltages of 3.85 V, 3.95 V, and 4.05 V. Cells are randomly assigned to packs and packs are randomly assigned to test conditions. The capacity of the cells to 3.0 V at the conditions of the test is being periodically measured. The results of this testing will be used to model cell performance and degradation as a function of test operating conditions. Cells are being evaluated in 4-cell series strings with charge voltage limits being applied to individual cells by charge control units designed and built at NASA Glenn Research Center. Testing is being performed at the Naval Surface Warfare Center/Crane Division in Crane, IN. Testing was initiated in September 2004 with 40 Ah cells from Saft and 30 Ah cells from Lithion. The test program is being expanded with the addition of cells from MSA and the addition of small cell modules is being considered. Preliminary results showing voltage, temperature, usable capacity per unit mass, and voltage dispersion as their changes over time for the cells at 20 C is presented.

McKissock, Barbara↗
NASA NTRS2012

Simple Cell Balance Circuit

A method has been developed for continuous cell voltage balancing for rechargeable batteries (e.g. lithium ion batteries). A resistor divider chain is provided that generates a set of voltages representing the ideal cell voltage (the voltage of each cell should be as if the cells were perfectly balanced). An operational amplifier circuit with an added current buffer stage generates the ideal voltage with a very high degree of accuracy, using the concept of negative feedback. The ideal voltages are each connected to the corresponding cell through a current- limiting resistance. Over time, having the cell connected to the ideal voltage provides a balancing current that moves the cell voltage very close to that ideal level. In effect, it adjusts the current of each cell during charging, discharging, and standby periods to force the cell voltages to be equal to the ideal voltages generated by the resistor divider. The device also includes solid-state switches that disconnect the circuit from the battery so that it will not discharge the battery during storage. This solution requires relatively few parts and is, therefore, of lower cost and of increased reliability due to the fewer failure modes. Additionally, this design uses very little power. A preliminary model predicts a power usage of 0.18 W for an 8-cell battery. This approach is applicable to a wide range of battery capacities and voltages.

Johnson, Steven D.↗
NASA NTRS2011

Modeling of SONOS Memory Cell Erase Cycle

Utilization of Silicon-Oxide-Nitride-Oxide-Silicon (SONOS) nonvolatile semiconductor memories as a flash memory has many advantages. These electrically erasable programmable read-only memories (EEPROMs) utilize low programming voltages, have a high erase/write cycle lifetime, are radiation hardened, and are compatible with high-density scaled CMOS for low power, portable electronics. In this paper, the SONOS memory cell erase cycle was investigated using a nonquasi-static (NQS) MOSFET model. Comparisons were made between the model predictions and experimental data.

Phillips, Thomas A.↗
NASA NTRS1986

Circuit transients due to negative bias arcs-II

Two new models of negative-bias arcing on a solar cell power system in Low Earth Orbit are presented. One is an extended, analytical model and the other is a non-linear, numerical model. The models are based on an earlier analytical model in which the interactions between solar cell interconnects and the space plasma as well as the parameters of the power circuit are approximated linearly. Transient voltages due to arcs struck at the negative thermal of the solar panel are calculated in the time domain. The new models treat, respectively, further linear effects within the solar panel load circuit and non-linear effects associated with the plasma interactions. Results of computer calculations with the models show common-mode voltage transients of the electrically floating solar panel struck by an arc comparable to the early model but load transients that differ substantially from the early model. In particular, load transients of the non-linear model can be more than twice as great as those of the early model and more than twenty times as great as the extended, linear model.

Metz, R. N.↗
NASA NTRS1982

Numerical simulation of a conducting disk partially covered by an insulator interacting with a plasma

A numerical simulation has been made of the 'pinhole effect' which produces the characteristic 'S-shaped' current-voltage curve. A disk-shaped conducting probe immersed in a plasma is modeled using a particle-in-cell (PIC) code. A probe partially covered by a very thin insulating layer is considered, as well as a probe mounted on an insulating disk. The simulation uses a cylindrical particle mover and allows for a variable number of particles in the system. The simulation space grid uses three different mesh sizes, the coarsest being away from the probe and the finest near the probe, in order to accurately calculate the trajectories of the simulation particles contributing the current to the probe and to the surface charge density on the dielectric. The calculation of the electrostatic potential is done self-consistently using successive over-relaxation (SOR). Backscattering and secondary electron emission are included for the case of positive probe voltage.

Chaky, R. C.↗
NASA NTRS1993

Lithium D-cell study

The purpose of this contract is to evaluate parametrically the effects of various factors including the electrolyte type, electrolyte concentration, depolarizer type, and cell configuration on lithium cell electrical performance and safety. This effort shall allow for the selection and optimization of cell design for future NASA applications while maintaining close ties with WGL's continuous improvements in manufacturing processes and lithium cell design. Taguchi experimental design techniques are employed in this task, and allow for a maximum amount of information to be obtained while requiring significantly less cells than if a full factorial design were employed. Acceptance testing for this task is modeled after the NASA Document EP5-83-025, Revision C, for cell weights, OCV's and load voltages. The performance attributes that are studied in this effort are fresh capacity and start-up characteristics evaluated at two rates and two temperatures, shelf-life characteristics including start-up and capacity retention, and iterative microcalorimetry measurements. Abuse testing includes forced over discharge at two rates with and without diode protection, temperature tolerance testing, and shorting tests at three rates with the measurement of heat generated during shorting conditions.

Size, P.↗
NASA NTRS2018

Insights into Space Solar Cell Durability Using SPICE Simulation Seeded by Current-Voltage Characteristics Parametrized Using the Lambert W Special Function

We developed and validated an automated routine for the fitting of I-V curve data to the single diode model according to an exact analytical solution. Our fitting routine was validated to show good noise immunity and high accuracy usingsimulated values from LTSPICE. We are thus able to automate parameter extraction from a dataset or arbitrary size. This parameterization allows for better simulation of performance of real cells and arrays and provides utility for a host of applications relevant to space arrays. We will use this methodology to determine the array performance of radiated cells over time, and simulate the performance of the arrays with bypass diodes and power electronics.

Solar Cell↗
NASA NTRS1973

A new electric field effect in silicon solar cells.

The phenomenon of high-resistivity silicon solar cells manifesting high open-circuit voltages previously observed only for cells made from low-resistivity silicon is shown to be caused by the presence of a shallow diffused region at the back surface of the cell. The basic cell structure is either n+, p, p+ or p+, n, n+. The high open-circuit voltage arises from the injection and accumulation of excess majority carriers in the bulk upon illumination or application of forward bias to the structure. A working model for the cell, designated a back surface field (BSF) cell, is described, and recent developments are cited.

Mandelkorn, J.↗