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Excited Carrier Dynamics in a Dye-Sensitized Niobate Nanosheet Photocatalyst for Visible-Light Hydrogen Evolution
Dye-sensitized photocatalysts that consist of a light-absorbing dye and a wide gap oxide semiconductor have been studied extensively as components of solar energy conversion systems. Although surface modification by a metal and/or metal oxide has a significant impact on the photocatalytic efficiency, the mechanism by which these modifications increase the activity has not been fully understood. Here a dye-sensitized H 2 evolution system was constructed by using Pt-intercalated HCa 2 Nb 3 O 10 nanosheets, Ru(II) complex photosensitizers ([Ru(4,4’-(CH 3 ) 2- bpy) 2 (4,4’-(PO 3 H 2 ) 2- bpy)] 2+ and [Ru(4,4’-(CH 3 ) 2- bpy) 2 (4,4’-(CH 2 PO 3 H 2 ) 2- bpy)] 2+ , abbreviated as RuP 2+ and RuCP 2+ ; bpy = 2,2'-bipyridine), and amorphous Al 2 O 3 as building blocks. In the presence of iodide as the electron donor, the H 2 evolution rate from Pt/HCa 2 Nb 3 O 10 nanosheets sensitized by RuP 2+ was increased by modification of the nanosheets with Al 2 O 3 . On the other hand, Al 2 O 3 had a negative impact on the H 2 evolution rate when RuCP 2+ was employed. These hybrid materials were studied by transient diffuse reflectance spectroscopy and steady-state emission spectroscopy. A detailed analysis of the transient absorption profiles of the adsorbed Ru(II) complexes revealed that there are at least three states of the complexes on the nanosheet surface. The transient bleaching of the ground state absorbance had different lifetime components ranging from a few μs to several hundred μs, which mainly reflect back electron transfer rates from HCa 2 Nb 3 O 10 to the oxidized Ru(II) complexes. Here, the Al 2 O 3 modifier could inhibit not only the back electron transfer events but also electron injection from the excited state photosensitizer. Interestingly, the negative effect of Al 2 O 3 on the electron injection rate was negligible in the case of RuP 2+ , which also had a higher H 2 evolution rate. This work highlights that suppressing fast back electron transfer from Pt/HCa 2 Nb 3 O 10 to the oxidized Ru(II) complex, which occurs on a time scale of a few μs, and maximizing the electron injection efficiency are both necessary for improving dye-sensitized H 2 evolution.
Quantifying carrier dynamics and PL characterization of antimony-doped CdTe and CdSeTe
Our team has achieved ~20% doping activation of CdSeTe with antimony (Sb), whose shallow acceptor level makes it a viable alternative to As.1,2 Arsenic (As)-doped graded CdSeTe photovoltaics have achieved record efficiencies of 22.3%. Remaining challenges include doping activation of only ~2% in polycrystalline films and radiative voltage losses of ~100 mV. Here we use (transient) terahertz and photoluminescence spectroscopy of CdTe:Sb and CdSeTe:Sb to show sufficiently long bulk lifetimes to enable high-efficiency devices. Early results also indicate dominant bandgap emission in CdSeTe:Sb and a lack of potential fluctuations with Sb-doping that have proven detrimental for As-doped films. While more work is needed, these results show significant promise for Sb doping.
Carrier Dynamics of Polar, Semipolar, and Nonpolar InGaN/GaN LEDs Measured by Small-Signal Electroluminescence
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Quantifying carrier dynamics and PL characterization of antimony-doped CdTe and CdSeTe
Our team has achieved ~20% doping activation of CdSeTe with antimony (Sb), whose shallow acceptor level makes it a viable alternative to As.1,2 Arsenic (As)-doped graded CdSeTe photovoltaics have achieved record efficiencies of 22.3%. Remaining challenges include doping activation of only ~2% in polycrystalline films and radiative voltage losses of ~100 mV. Here we use (transient) terahertz and photoluminescence spectroscopy of CdTe:Sb and CdSeTe:Sb to show sufficiently long bulk lifetimes to enable high-efficiency devices. Early results also indicate dominant bandgap emission in CdSeTe:Sb and a lack of potential fluctuations with Sb-doping that have proven detrimental for As-doped films. While more work is needed, these results show significant promise for Sb doping.
Charge Carrier Dynamics in Two-Dimensional Hybrid Perovskites: Impact of Spacer Cations
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Monte Carlo Analysis of Carrier Dynamics in GaN Photoconductive Switches for Pulses in the 100 GHz Range
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Semi-Blind Dynamic Carrier Frequency Selection of a Feedback Side Channel.
Abstract not provided.
Charge carrier nonadiabatic dynamics in non-metal doped graphitic carbon nitride
Graphitic carbon nitride (GCN) has attracted significant attention due to its excellent performance in photocatalytic applications. Non-metal doping of GCN has been widely used to improve the efficiency of the material as a photocatalyst. Using a combination of time-domain density functional theory with nonadiabatic molecular dynamics, we study the charge carrier dynamics in oxygen and boron doped GCN systems. The reported simulations provide a detailed time-domain mechanistic description of the charge separation and recombination processes that are of fundamental importance while evaluating the photovoltaic and photocatalytic performance of the material. The appearance of smaller energy gaps due to the presence of dopant states improves the visible light absorption range of the doped systems. At the same time, the nonradiative lifetimes are shortened in the doped systems as compared to the pristine GCN. In the case of boron doped at a carbon (B–C–GCN), the charge recombination time is very long as compared to the other two doped systems owing to the smaller electron–phonon coupling strength between the valence band maximum and the trap state. The results suggest B–C–GCN as the most suitable candidate among three doped systems studied in this work for applications in photocatalysis. Finally, this work sheds light into the influence of dopants on quantum dynamics processes that govern GCN performance and, thus, guides toward building high-performance devices in photocatalysis.
Ab initio quantum dynamics of plasmonic charge carriers
Surface plasmons respond strongly to electric fields and generate energetic (hot) charge carriers that can be used in optoelectronic devices. However, utilization of hot carriers has to outcompete fast carrier relaxation in metals. Often, the reported efficiencies of nanoscale devices based on plasmon excitations are low and the mechanisms of device operation remain inconsistent within the field. Further developments hinge on fundamental understanding of the nature and kinetics of plasmon decay processes. In this work, we provide an overview of time domain ab initio modeling of hot carrier dynamics, demonstrating that atomistic details of the surface structure of plasmonic materials, and their chemical interaction with semiconducting and molecular charge acceptors and substrates, play key roles in governing the dynamics pathways. Considered case studies represent various dynamics channels and illustrate solar energy and optoelectronic applications.
Carrier-specific dynamics in 2H-MoTe2 observed by femtosecond soft x-ray absorption spectroscopy using an x-ray free-electron laser
Femtosecond carrier dynamics in layered 2H-MoTe2 semiconductor crystals have been investigated using soft x-ray transient absorption spectroscopy at the x-ray free-electron laser (XFEL) of the Pohang Accelerator Laboratory. Following above-bandgap optical excitation of 2H-MoTe2, the photoexcited hole distribution is directly probed via short-lived transitions from the Te 3d5/2 core level (M5-edge, 572–577 eV) to transiently unoccupied states in the valence band. The optically excited electrons are separately probed via the reduced absorption probability at the Te M5-edge involving partially occupied states of the conduction band. A 400 ± 110 fs delay is observed between this transient electron signal near the conduction band minimum compared to higher-lying states within the conduction band, which we assign to hot electron relaxation. Additionally, the transient absorption signals below and above the Te M5 edge, assigned to photoexcited holes and electrons, respectively, are observed to decay concomitantly on a 1–2 ps timescale, which is interpreted as electron–hole recombination. The present work provides a benchmark for applications of XFELs for soft x-ray absorption studies of carrier-specific dynamics in semiconductors, and future opportunities enabled by this method are discussed.
Bridging length scales in organic mixed ionic–electronic conductors through internal strain and mesoscale dynamics
Understanding the structural and dynamic properties of disordered systems at the mesoscale is crucial. This is particularly important in organic mixed ionic-electronic conductors (OMIECs), which undergo significant and complex structural changes when operated in an electrolyte. Here, in this study, we investigate the mesoscale strain, reversibility and dynamics of a model OMIEC material under external electrochemical potential using operando X-ray photon correlation spectroscopy. Our results reveal that strain and structural hysteresis depend on the sample's cycling history, establishing a comprehensive kinetic sequence bridging the macroscopic and microscopic behaviours of OMIECs. Furthermore, we uncover the equilibrium and non-equilibrium dynamics of charge carriers and material-doping states, highlighting the unexpected coupling between charge carrier dynamics and mesoscale order. These findings advance our understanding of the structure-dynamics-function relationships in OMIECs, opening pathways for designing and engineering materials with improved performance and functionality in non-equilibrium states during device operation. Understanding mesoscale structure and dynamics in organic mixed ionic-electronic conductors is crucial. Mesoscale strain kinetics and structural hysteresis have been studied, and they uncover the coupling between charge carrier dynamics and mesoscale order in organic mixed ionic-electronic conductors.
Superior photo-carrier diffusion dynamics in organic-inorganic hybrid perovskites revealed by spatiotemporal conductivity imaging
Abstract The outstanding performance of organic-inorganic metal trihalide solar cells benefits from the exceptional photo-physical properties of both electrons and holes in the material. Here, we directly probe the free-carrier dynamics in Cs-doped FAPbI 3 thin films by spatiotemporal photoconductivity imaging. Using charge transport layers to selectively quench one type of carriers, we show that the two relaxation times on the order of 1 μs and 10 μs correspond to the lifetimes of electrons and holes in FACsPbI 3 , respectively. Strikingly, the diffusion mapping indicates that the difference in electron/hole lifetimes is largely compensated by their disparate mobility. Consequently, the long diffusion lengths (3~5 μm) of both carriers are comparable to each other, a feature closely related to the unique charge trapping and de-trapping processes in hybrid trihalide perovskites. Our results unveil the origin of superior diffusion dynamics in this material, crucially important for solar-cell applications.
Strain-Driven Evolution of Structural and Carrier Recombination Dynamics in Germanium
Strain engineering in group-IV semiconductors, in particular germanium (Ge), offers a promising route for advancing next-generation optoelectronic device performance. High minority carrier lifetime serves as a direct indicator of superior material quality and device efficiency. Several factors govern the minority carrier lifetime in both strained Ge and strained GeSn, such as strain level, epilayer thickness, defects, surface roughness, and Sn alloying. In this study, the impact of biaxial strain on effective minority carrier lifetimes of tensile-strained Ge (0% ..epsilon..-Ge/Al?As, 0.78% ..epsilon..-Ge/In0.115?Ga0.885?As, and 0.93% ..epsilon..-Ge/In0.16?Ga0.84?As) and compressively strained GeSn (-0.53% c-Ge0.97?Sn0.03/Al?As) epilayers, grown by molecular beam epitaxy, was experimentally investigated via the microwave-reflection photoconductive decay (..mu..-PCD) technique as a simultaneous function of thickness and strain. The structural and strain-relaxation properties were analyzed by high-resolution x-ray diffraction and Raman spectroscopy, while surface morphology analysis using atomic force microscopy provided insights into the surface roughness of strained Ge-based epilayers. Defect characterization by cross-section transmission electron microscopy revealed superior crystalline quality of ..epsilon..-Ge in one epilayer, while twin boundary formation was observed in the other. We investigated the carrier recombination dynamics in epitaxially strained Ge by extracting the bulk recombination lifetime and surface recombination velocity using the thickness-dependent minority carrier lifetime. High effective minority carrier lifetimes of approximately 60-340 ns were achieved at high strain levels with minimal dependence on the thickness of the strained Ge-based epilayers by means of the ..mu..-PCD technique. Minority carrier lifetimes in Ge-based epilayers exhibit a quadratic dependence on the biaxial strain, ranging from -0.88% (compressive) to +1.6% (tensile). The analysis of the carrier recombination dynamics in strained Ge-based heterostructures offers a pathway to designing group-IV based optoelectronic devices.
Scaling Laws of Exciton Recombination Kinetics in Low Dimensional Halide Perovskite Nanostructures
Carrier recombination is a crucial process governing the optical properties of a semiconductor. Although various theoretical approaches have been utilized to describe carrier behaviors, a quantitative understanding of the impact of defects and interfaces in low dimensional semiconductor systems is still elusive. Here, we develop a model system consisting of chemically tunable, highly luminescent halide perovskite nanocrystals to illustrate the role of carrier diffusion and material dimensionality on the carrier recombination kinetics and luminescence efficiency. Our advanced synthetic methods provide a well-controlled colloidal system consisting of nanocrystals with different aspect ratios, halide compositions, and surface conditions. Using this system, we reveal the scaling laws of photoluminescence quantum yield and radiative lifetime with respect to the aspect ratio of nanocrystals. The scaling laws derived herein are not only a phenomenological observation but proved a powerful tool disentangling the carrier dynamics of microscopic systems in a quantitative and interpretable manner. The investigation of our model system and theoretical formulation bring to light the dimensionality, as a hidden constraint on carrier dynamics, and identify the diffusion length as an important parameter that distinguishes nanoscale and macroscale carrier behaviors. Furthermore, the conceptual distinction in carrier dynamics in different dimensionality regimes informs new design rules for optical devices where complex microstructures are involved.