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At least 73 records · Page 4

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NASA NTRS1995

Operational characteristics of a 200 C LC parallel resonant circuit

Research efforts are currently underway at the NASA Lewis Research Center to design and demonstrate an inverter capable of operating with a baseplate temperature of 200 C. In support of this project, various electrical components including capacitors, inductors, transformers, cables, and semiconductor switches are being developed or evaluated for integration into the inverter. In this work, a parallel LC resonant circuit was constructed and evaluated under simultaneous electrical and thermal stressing. The tests were performed in the temperature range of 25 to 200 C with an applied voltage of up to 90 V, 20 kHz. The individual components were comprised of high temperature film capacitors and powder core inductors developed in-house. The circuit was characterized in terms of the component currents and case temperatures as well as frequency of resonance as a function of applied bias and temperature. The results obtained, which have indicated good functional stability up to 200 C, are presented and discussed.

Baumann, Eric D.↗

NASA NTRS2014

Evaluation of Commercial Automotive-Grade BME Capacitors

Three Ni-BaTiO3 ceramic capacitor lots with the same specification (chip size, capacitance, and rated voltage) and the same reliability level, made by three different manufacturers, were degraded using highly accelerated life stress testing (HALST) with the same temperature and applied voltage conditions. The reliability, as characterized by mean time to failure (MTTF), differed by more than one order of magnitude among the capacitor lots. A theoretical model based on the existence of depletion layers at grain boundaries and the entrapment of oxygen vacancies has been proposed to explain the MTTF difference among these BME capacitors. It is the conclusion of this model that reliability will not be improved simply by increasing the insulation resistance of a BME capacitor. Indeed, Ni-BaTiO3 ceramic capacitors with a smaller degradation rate constant K will always give rise to a longer reliability life

capacitor↗

NASA NTRS2014

Evaluation of Commercial Automotive-Grade BME Capacitors

reliability↗

NASA NTRS1981

Accelerated life testing and reliability of high K multilayer ceramic capacitors

The reliability of one lot of high K multilayer ceramic capacitors was evaluated using accelerated life testing. The degradation in insulation resistance was characterized as a function of voltage and temperature. The times to failure at a voltage-temperature stress conformed to a lognormal distribution with a standard deviation approximately 0.5.

Minford, W. J.↗

NASA NTRS2004

Measurement of Thin Film Integrated Passive Devices on SiC through 500 C

Wireless communication in jet engines and high temperature industrial applications requires FD integrated circuits (RFICs) on wide bandgap semiconductors such as Silicon Carbide (SiC). In this paper, thin-film NiCr resistors, MIM capacitors, and spiral inductors are fabricated on a high purity semi-insulating 4H-SiC substrate. The devices are experimentally characterized through 50 GHz at temperatures of up to 500 C and the equivalent circuits are deembedded from the measured data. It is shown that the NiCr resistors are stable within 10% to 300 C while the capacitors have a value stable within 10% through 500 C.

Schwartz, Zachary D.↗

DOE OSTI2025

Rheo–Electric Foundations and Engineering of Carbon Slurry Flow Electrodes

Flowable carbon slurry electrodes promise continuous, scalable electrochemical desalination and energy storage when their rheology (flow and stability) and electronic connectivity are jointly optimized. This report integrates six complementary thrusts that we executed under the Laboratory Directed Research and Development (LDRD) project: (i) a fast, ex situ, centrifuge-compatible method to quantify pellet (packed slurry) electronic conductivity, with a validated cell constant (“shape factor”) and quantitative structure–property insights for carbon mixtures; (ii) a controlled circulation study showing that peristaltic pumping can irreversibly alter particle size and morphology over laboratory-relevant durations; (iii) development of a miniature jet pump that preserves particle integrity while achieving entrainment ratios of 2–4 at practical flow rates; (iv) a comprehensive mapping of how a representative non-ionic surfactant (Tween 20) collapses the carbon gel network, separating network-percolation losses from intrinsic particle contact resistance; (v) in-situ visualization revealing how gravitational settling and flow-driven mixing compete to control charge transport, with dynamic bed layers preventing saturation while achieving 30-fold local concentration enhancement; and (vi) a simple, widely adoptable fabrication route to structured, gas-nitrided titanium nitride (TiN) titanium current collectors that dramatically lower interfacial losses and enable geometry-driven performance gains. Together, these results provide a coherent toolchain and design rules to accelerate formulation screening, de-risk device prototyping, and standardize characterization for carbon slurry electrodes in flow-electrode capacitive deionization (FCDI), electrochemical flow capacitor (EFC), and related systems.

25 ENERGY STORAGE↗

NASA NTRS2002

Preliminary Evaluation of Polyarylate Dielectric Films for Cryogenic Applications

Polymeric materials are used extensively on spacecraft and satellites in electrical power and distribution systems, as thermal blankets and optical surface coatings, as well as mechanical support structures. The reliability of these systems when exposed to the harsh environment of space is very critical to the success of the mission and the safety of the crew in manned-flight ventures. In this work, polyarylate films were evaluated for potential use as capacitor dielectrics and wiring insulation for cryogenic applications. Two grades of the film were characterized in terms of their electrical and mechanical properties before and after exposure to liquid nitrogen (-196 C). The electrical characterization consisted of capacitance and dielectric loss measure Cents in the frequency range of 50 Hz to 100 kHz, and volume and surface resistivities. The mechanical measurements performed included changes in tensile (Young's modulus, elongation-at-break, and tensile strength) and structural properties (dimensional change, weight, and surface morphology). The preliminary results, which indicate good stability of the polymer after exposure to liquid nitrogen, are presented and discussed.

Patterson, Richard L.↗

NASA NTRSDate not supplied

Parallel-Plate Capacitor TiN KIDs for Infrared Astronomy

The Balloon Experiment for Galactic INfrared Science (BEGINS) is a concept for a sub-orbital observatory that will characterize dust in the vicinity of high-mass stars. It requires detectors with NEPs from 2x10 -16 W Hz -1/2 to 6x10 -17 W Hz -1/2 from 25-250 microns, respectively. The mission’s sensitivity requirements will be met by utilizing arrays of 1,840 lens-coupled, lumped-element kinetic inductance detectors (KIDs) operating at 300 mK. Each KID will consist of a titanium nitride (TiN) parallel strip absorbing inductive section and parallel plate capacitor deposited on a Silicon (Si) substrate. The parallel plate capacitor geometry allows for reduction of the pixel spacing. We present the optical performance of a prototype BEGINS KID array at 25 microns when coupled to Fresnel zone plate lenses. We present sensitivity, optical efficiency and quasiparticle lifetime measurements taken in a cryogenic test bed with a cryogenic blackbody.

Joanna Perido↗

NASA NTRSDate not supplied

Parallel plate capacitor TiN KID array development for the Balloon Experiment for Galactic Infrared Science

The Balloon Experiment for Galactic Infrared Science (BEGINS) will map dust spectral energy distributions (SEDs) between 25 and 250 microns near high-mass star regions, characterizing the radiation fields and dust properties of a variety of stellar environments. To accomplish these goals, BEGINS will be outfitted with roughly 1,800 titanium nitride (TiN), superconducting kinetic inductance detectors (KIDs). A parallel plate capacitor KID design is used to achieve high pixel density arrays. A cryogenic, silicon-based, metal-mesh linear variable filter will define detector band passes across the KID array. Optical coupling to the filters and telescope will be accomplished using silicon microlenses. Here we present laboratory characterization of prototype BEGINS detector arrays, describe future array development plans, and describe the testbed used to characterize the arrays.

Nicholas F. Cothard↗

NASA NTRS1968

Characterization of silicon dioxide for a capacitance-type meteoroid penetration detector

Fabrication and testing of large area metal oxide silicon capacitors for micrometeoroid counting in space

Canady, K. S.↗

NASA NTRS1989

Electron-beam induced damage in thin insulating films on compound semiconductors

Phosphorus rich plasma enhanced chemical vapor deposition (PECVD) of silicon nitride and silicon dioxide films on n-type indium phosphide (InP) substrates were exposed to electron-beam irradiation in the 5 to 40 keV range for the purpose of characterizing the damage induced in the dielectric. The electron-beam exposure was on the range of 10(exp -7) to 10(exp -3) C/sq cm. The damage to the devices was characterized by capacitance-voltage (C-V) measurements of the metal insulator semiconductor (MIS) capacitors. These results were compared to results obtained for radiation damage of thermal silicon dioxide on silicon (Si) MOS capacitors with similar exposures. The radiation induced damage in the PECVD silicon nitride films on InP was successfully annealed out in an hydrogen/nitrogen (H2/N2) ambient at 400 C for 15 min. The PECVD silicon dioxide films on InP had the least radiation damage, while the thermal silicon dioxide films on Si had the most radiation damage.

Pantic, Dragan M.↗

NASA NTRS1990

Electron beam induced damage in PECVD Si3N4 and SiO2 films on InP

Phosphorus rich plasma enhanced chemical vapor deposition (PECVD) of silicon nitride and silicon dioxide films on n-type indium phosphide (InP) substrates were exposed to electron beam irradiation in the 5 to 40 keV range for the purpose of characterizing the damage induced in the dielectic. The electron beam exposure was on the range of 10(exp -7) to 10(exp -3) C/sq cm. The damage to the devices was characterized by capacitance-voltage (C-V) measurements of the metal insulator semiconductor (MIS) capacitors. These results were compared to results obtained for radiation damage of thermal silicon dioxide on silicon (Si) MOS capacitors with similar exposures. The radiation induced damage in the PECVD silicon nitride films on InP was successfully annealed out in an hydrogen/nitrogen (H2/N2) ambient at 400 C for 15 min. The PECVD silicon dioxide films on InP had the least radiation damage, while the thermal silicon dioxide films on Si had the most radiation damage.

Pantic, Dragan M.↗

NASA NTRSDate not supplied

Parallel Plate Capacitor Aluminum KIDs for Future Far-Infrared Space-Based Observatories

Future space-based far-infrared astrophysical observatories will require exquisitely sensitive detectors consistent with the low optical backgrounds. The PRobe far-Infrared Mission for Astrophysics (PRIMA) will deploy arrays of thousands of superconducting kinetic inductance detectors (KIDs) sensitive to radiation between 25 and 265 μm. Here, we present laboratory characterization of prototype, 25 – 80 μm wavelength, low-volume, aluminum KIDs designed for the low-background environment expected with PRIMA. A compact parallel plate capacitor is used to minimize the detector footprint and suppress TLS noise. A novel resonant absorber is designed to enhance response in the band of interest. We present noise and optical efficiency measurements of these detectors taken with a low background cryostat and a cryogenic blackbody. A microlens-hybridized KID array is found to be photon noise limited down to about 50 aW with a limiting detector NEP of about 6.5×10 −19 W/Hz 1/2 . A fit to an NEP model shows that our optical system is well characterized and understood down to 50 aW. We discuss future plans for low-volume aluminum KID array development as well as the testbeds used for these measurements.

Far-Infrared↗

NASA NTRS1983

Techniques for improving the Si-SiO2 interface characterization

The two techniques which have provided most of the information on interface states in MIS-C (metal-insulator-semiconductor-capacitor) structures are the 'quasi-static method' and the 'conductance method'. Sher et al. (1979) and Su et al. (1980) have suggested a number of improvements concerning these methods. The present investigation has the objective to extend the earlier results and to offer a new tentative interpretation of the data. A critical review is conducted of the data collection and reduction techniques for the quasi-static method, taking into account the sample, the quasi-static capacitance, and the surface potential. In connection with a discussion of the conductance method, attention is given to parallel conductance and capacitance measurements, interface-state densities, time constants, and measurements on a (110) surface orientation.

Sher, A.↗

DOE OSTI2023

Correlation between cation order/disorder and the electrocaloric effect in the MLCCs of complex perovskite ferroelectrics

The physical properties (dielectric, ferroelectric, piezoelectric, etc.) of complex perovskite ferroelectrics depend on the degree of order/disorder and the scale of the ordered domains. In this study, the electrocaloric (EC) properties of three representative complex perovskite ferroelectrics, Pb(Mg 1/3 Nb 2/3 )O 3 -8PbTiO 3 (PMN-8PT), 1mol% Sm-doped Pb(Mg 1/3 Nb 2/3 )O 3 -8PbTiO 3 (1S-PMN-8PT) and Pb(Sc 1/2 Ta 1/2 )O 3 (PST) are evaluated. Multi-layer ceramic capacitors (MLCCs) with identical structural configurations were fabricated for these three compounds, and their EC properties were characterized by direct measurement using a thermocouple. The EC temperature change of PMN-8PT, 1S-PMN-8PT and PST MLCCs under 20 V μm –1 at room temperature were found to be 1.42 K, 1.54 K, and 3.10 K, respectively. X-ray diffraction and high-resolution transmission electron microscopy data suggests that the high EC performance of PST is related to the ordering of B-site cations (Sc 3+ and Ta 5+ ) with the ordering parameter S = 0.82 and a long coherence length of ~100 nm, such that the sample transitioned from a relaxor ferroelectric to a normal ferroelectric. Furthermore, these results provide pathway towards design of high performance EC materials required for solid state refrigeration and air-conditioning technologies.

36 MATERIALS SCIENCE↗

NASA NTRS1998

Performance of Surface-Mount Ceramic and Solid Tantalum Capacitors for Cryogenic Applications

Low temperature electronics are of great interest for space exploration programs. These include missions to the outer planets, earth-orbiting and deep-space probes, remote-sensing and communication satellites. Terrestrial applications would also benefit from the availability of low temperature electronics. Power components capable of low temperature operation would, thus, enhance the technologies needed for the development of advanced power systems suitable for use in harsh environments. In this work, ceramic and solid tantalum capacitors were evaluated in terms of their dielectric properties as a function of temperature and at various frequencies. The surface-mount devices were characterized in terms of their capacitance stability and dissipation factor in the frequency range of 50 Hz to 100 kHz at temperatures ranging from room temperature (20 deg. C) to about liquid nitrogen temperature (-190 deg. C). The results are discussed and conclusions made concerning the suitability of the capacitors investigated for low temperature applications.

Patterson, Richard L.↗

NASA NTRS2005

High Temperature Performance of a SiC MESFET Based Oscillator

A hybrid, UHF-Band differential oscillator based on 10 w SiC RF Power Metal Semiconductor Field Effect Transistor (MESFET) has been designed, fabricated and characterized through 475 C. Circuit is fabricated on an alumina substrate with thin film spiral inductors, chip capacitors, chip resistors, and wire bonds for all crossovers and interconnectors. The oscillator delivers 15.7 dBm at 515 MHz into a 50 Ohm load at 125 C with a DC to RF conversion efficiency of 2,8%. After tuning the load impedance, the oscillator delivers 18.8 dBm at 610 MHz at 200 C with a DC to RF conversion efficiency of 5.8%. Finally, by tuning the load and bias conditions, the oscillator delivers 4.9 dBm at 453 MHz at 475 C.

Schwartz, Zachary D.↗

NASA NTRS2015

Rocket Propulsion 21 Steering Committee Meeting (RP21) NASA In-Space Propulsion Update

In-house Support of NEXT-C Contract Status Thruster NEXT Long Duration Test post-test destructive evaluation in progress Findings will be used to verify service life models identify potential design improvements Cathode heater fabrication initiated for cyclic life testing Thruster operating algorithm definition verification initiated to provide operating procedures for mission users High voltage propellant isolator life test voluntarily terminated after successfully operating 51,200 h Power processor unit (PPU) Replaced all problematic stacked multilayer ceramic dual inline pin capacitors within PPU Test bed Rebuilt installed discharge power supply primary power board Completed full functional performance characterization Final test report in progress Transferred PPU Testbed to contractor to support prototype design effort.

Electric Propulsion↗