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At least 73 records · Page 4

Subsurface hydrogen, curvature, and strain: lessons from electro-reduction of benzaldehyde on nano-structured Pd catalysts

The unique ability of palladium (Pd) to absorb hydrogen and form a bulk hydride is vital for chemical transformations that involve hydrogenation reactions. Nano-structured Pd catalysts offer a promise of tuning these reaction rates by exploiting variations of reactant binding energies depending on the surface structure and morphological constraints that result in inhomogeneous strain. However, the interplay between the nano-structure of Pd and the ability of Pd to adsorb (and absorb) hydrogen as well as other reactive species needs to be better understood for a rational understanding of competitive chemical transformations at Pd surfaces. We consider the effects of the surface corrugation, strain, and subsurface Pd hydride on the reduction of benzaldehyde to benzyl alcohol in two qualitatively different samples – Pd nanoparticles and Pd gels formed by quasi-one-dimensional chains of these nanoparticles. Our electrochemical measurements and computational modelling suggest that surface concave sites, inherent to Pd gels, facilitate hydrogen transfer to the Pd subsurface region, thus weakening benzaldehyde binding to the surface. This effect is further modulated by the strain, depending on the local coordination environment on the corrugated surface. Furthermore, these findings demonstrate how structurally complex samples in the form of gels provide degrees of freedom for controlling the behavior of metal catalysts that are not available in isolated nanoparticles, which paves the way for new approaches in the design of catalytic materials and synthesis of metal hydrides.

Padavala, Sri Krishna Murthy [University of Minnes↗

Stretchable Photodiodes with Polymer-Engineered Semiconductor Nanowires for Wearable Photoplethysmography

Healthcare systems worldwide have been stressed to provide sufficient resources to serve the increasing and aging population in our society. The situation became more challenging at the time of pandemic. Technology advancement, especially the adoption of wearable health monitoring devices, has provided an important supplement to current clinical equipment. Most health monitoring devices are rigid, however, human tissues are soft. Such a difference has prohibited intimate contact between the two and jeopardized wearing comfortableness, which hurdles measurement accuracy especially during longtime usage. Here, in this work, we report a soft and stretchable photodiode that can conformally adhere onto the human body without any pressure and measure cardiovascular variables for an extended period with higher reliability than commercial devices. The photodiode used a composite light absorber consisting of an organic bulk heterojunction embedded into an elastic polymer matrix. It is discovered that the elastic polymer matrix not only improves the morphology of the bulk heterojunction for obtaining the desired mechanical properties but also alters its electronic band structure and improves the electrical properties that lead to a reduced dark current and enhanced photovoltage in the stretchable photodiode. The work has demonstrated high fidelity measurements and longtime monitoring of heat rate variability and oxygen saturation, potentially enabling next-generation wearable photoplethysmography devices for point-of-care diagnosis of cardiovascular diseases in a more accessible and affordable way.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Quantum efficiency of InGaN–GaN multi-quantum well solar cells: Experimental characterization and modeling

InGaN-based multi-quantum well (MQW) solar cells are promising devices for photovoltaics (e.g., for tandem solar cells and concentrator systems), space applications, and wireless power transfer. In order to improve the efficiency of these devices, the factors limiting their efficiency and stability must be investigated in detail. Due to the complexity of a MQW structure, compared with a simple pn junction, modeling the spectral response of these solar cells is not straightforward, and ad hoc methodologies must be implemented. In this paper, we propose a model, based on material parameters and closed-formula equations, that describes the shape of the quantum efficiency of InGaN/GaN MQW solar cells, by taking into account the layer thickness, the temperature dependence of the absorption coefficient, and quantum confinement effects. We demonstrate (i) that the proposed model can effectively reproduce the spectral response of the cells; in addition, (ii) we prove that the bulk p-GaN layer absorbs radiation, but the carriers photogenerated in this region do not significantly contribute to device current. Finally, we show that (iii) by increasing the temperature, there is a redshift of the absorption edge due to bandgap narrowing, which can be described by Varshni law and is taken into account by the model, and a lowering in the extraction efficiency due to the increase in recombination (mostly Shockley–Read–Hall) inside the quantum wells, which is also visible by decreasing light intensity.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Charge Carrier Lifetime Determination in Graded Absorber Solar Cells Using Time‐Resolved Photoluminescence Simulations and Measurements

Thin‐film photovoltaic device efficiencies are limited by carrier recombination, thus understanding recombination mechanisms is critical for performance improvements. Bulk minority carrier lifetime ( τ bulk ) is a critical parameter for solar cells but is difficult to determine in P–N junction devices, especially for high doping. As doping ≥10 16 cm −3 is required for efficient drift‐charge‐carrier‐collection devices, a method for τ bulk determination in doped P–N junction devices is necessary. This work utilizes time‐resolved photoluminescence (TRPL) simulations to quantify bulk and interface recombination properties in highly doped, graded absorber CdSeTe structures. The two methods developed here for τ bulk determination include utilization of an instantaneous lifetime representation to guide TRPL fitting and direct comparison between measured and simulated decays. Simulations verified that both methods are valid for state‐of‐the‐art device architectures which include graded bandgap absorbers, graded doping, and graded lifetimes. Shifts in the dominant recombination mechanism are identified for sufficiently long τ bulk , where front and back interface quality plays a more prominent role. Evaluation of surface recombination velocities and conduction band offset illustrate electro‐optical advantages of a positive conduction band offset and highlight the necessity of improved interfaces as bulk quality in photovoltaic devices improves.

14 SOLAR ENERGY↗

Extended Cut-Off Wavelength nBn Detector Utilizing InAsSb/InSb Digital Alloy Absorber

We investigated a novel approach to extend a cut -off wavelength of Sb-based nBn detectors. We incorporated a series of single InSb monolayer into InAsSb bulk that allowed to realize a digital alloy absorber with an extended cut-off wavelength of λ = 4.6 μm at T = 200 K. The cut-off wavelength extension to 4.6μm is technologically important for realization of detectors covering CO2 absorption line at 4.26μm

InAsSb/InSb photodiodes↗

Active Phase on SrCo 1–x Fe x O -δ (0 ≤ x ≤ 0.5) Perovskite for Water Oxidation: Reconstructed Surface versus Remaining Bulk

Perovskite oxides based on earth-abundant transition metals have been extensively explored as promising oxygen evolution reaction (OER) catalysts in alkaline media. The (electro)chemically induced transformation of their initially crystalline surface into an amorphous state has been reported for a few highly active perovskite catalysts. However, little knowledge is available to distinguish the contribution of the amorphized surface from that of the remaining bulk toward the OER. In this work, we utilize the promoting effects of two types of Fe modification, i.e., bulk Fe dopant and Fe ions absorbed from the electrolyte, on the OER activity of SrCoO 3-δ model perovskite to identify the active phase. Transmission electron microscopy and X-ray photoelectron spectroscopy confirmed the surface amorphization of SrCoO 3-δ as well as SrCo 0.8 Fe 0.2 O 3-δ after potential cycling in Fe-free KOH solution. By further cycling in Fe-spiked electrolyte, Fe was incorporated into the amorphized surface of SrCoO 3-δ (SrCoO 3-δ + Fe 3+ ), yielding approximately sixfold increase in activity. Despite the difference in remaining perovskites, SrCoO 3-δ + Fe 3+ and SrCo 0.8 Fe 0.2 O 3-δ exhibited remarkably similar activity. These results reflect that the in situ developed surface species are directly responsible for the measured OER activity, whereas the remaining bulk phases have little impact.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Purifying Water by Imbibition

Concept for purifying water uses absorbent material to remove organic substances. Entire bulk of material employed, not just surface. Proposed purification process uses inexpensive equipment and low energy. Material is methyl acrylate polymer. Material cheap and regenerated by rinsing with methanol or by allowing absorbed compounds to evaporate from it.

Lawton, E. A.↗

Ultrafast nonlinear absorption of TMDC quantum dots

Here, we study theoretically absorption properties of MoS 2 quantum dots placed in an ultrashort and strong optical pulse with the duration of a few femtoseconds and the amplitude up to 1.5 V/Å. While the monolayer of MoS 2 has a bandgap of ≈ 1.8 eV, the quantum dots of MoS 2 have in-gap edge states, which open additional absorption channels. The absorbance of the system strongly depends on the amplitude of the pulse. At small amplitude, less than 0.5 V/Å, the absorbance varies by more than 20% with the frequency of the pulse. The system shows saturable absorption if the frequency of the pulse is larger than the bulk bandgap and reverse saturable absorption if the frequency of the pulse is in the bandgap. At large amplitudes, > 0.5 V/Å, of the pulse, the ultrafast absorbance of a quantum dot has a weak dependence on the pulse frequency. If the frequency of the pulse is less than the corresponding bulk bandgap, the absorbance has a nonmonotonic dependence on the pulse amplitude with the maximum at ≈ 0.5 V/Å. We also present the results for QDs of different TMDC materials, which show that at large field amplitude, > 0.5 V/Å, the absorbance is universal and has weak dependence on the type of TMDC.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Multijunction solar cells with graded buffer Bragg reflectors

Distributed Bragg reflectors are incorporated into the compositionally graded buffers of metamorphic solar cells, adding functionality to the buffer without adding cost. The reflection aids in collection in subcells that are optically thin due to low diffusion length, high bulk recombination, radiation hardness, partially-absorbing quantum structures, or simply for cost savings. Performance enhancements are demonstrated in GaAs subcells with QWs, which is beneficial when GaAs is not the ideal bandgap.

France, Ryan Matthew↗

Chemical and Electronic Structure at the Interface between a Sputter-Deposited Zn(O,S) Buffer and a Cu(In,Ga)(S,Se) 2 Solar Cell Absorber

The chemical and electronic structure of the interface between a sputter-deposited Zn(O,S) buffer layer and an industrial Cu(In,Ga)(S,Se) 2 (CIGSSe) absorber for thin-film solar cells is investigated with X-ray and UV photoelectron spectroscopy, inverse photoemission spectroscopy, and X-ray emission spectroscopy. We find a CIGSSe absorber surface band gap of 1.61 (±0.14) eV, which is significantly increased as compared to the minimal value derived with bulk-sensitive methods (≈1.1 eV). We find no indication for diffusion of absorber elements into the buffer layer. Surface- and bulk-sensitive measurements of the buffer layer suggest the presence of S-Zn and S-O bonds in the Zn(O,S) layer. We find that the naturally existing downward band bending toward the CIGSSe absorber surface is increased by the formation of the interface, likely enhancing carrier separation under illumination. We also derive a flat conduction band alignment, in line with the reported high conversion efficiencies of corresponding large-area solar cells.

14 SOLAR ENERGY↗

Impact of Carrier Concentration and Carrier Lifetime on MgZnO/CdSeTe/CdTe Solar Cells

Here, the performance impact of multiple parameters related to the use of MgZnO (MZO) as the emitter for bilayer CdSeTe/CdTe solar cells has been investigated in detail through numerical simulations. Such a comprehensive study is particularly important, because while cell fabrication using MZO has been highly successful in some cases, it has been less so in others, and it has not been clear which combinations of parameter values are most effective. The parameters considered here include the recombination velocity at the emitter/absorber interface, bulk recombination lifetime, and the carrier concentrations of the emitter and absorber. The ranges chosen for the simulation parameters are those most likely to be found experimentally. The primary finding is that independent of the interfacial recombination velocity and bulk recombination lifetime, the MZO carrier density should be > 1017 cm-3 and in any case greater than that of the absorber to reduce interface recombination. At the same time, a shallow dopant the order of 50 meV or less should reduce SRH recombination in the bulk and enable VOC > 1V.

14 SOLAR ENERGY↗

Accelerated Synthesis of Ordered Mesoporous Carbons Using Plasma

Conventional ordered mesoporous carbon (OMC) production usually requires long processing times in the carbonization step to achieve desired temperatures through controlled ramps. To enable expedited materials discovery, developing advanced manufacturing capability with significantly improved throughput is highly desired. Current approaches for accelerating the synthesis of OMCs include using microwave and Joule heating. However, both methods rely on the introduction of additional components, such as microwave absorbers and electrically conductive agents, within the bulk materials to impart the ability to reach high carbonization temperatures. This work demonstrates accelerated synthesis and functionalization of OMCs through the use of a dielectric barrier discharge plasma, where carbonization can be accomplished within 15 min using 30 W plasma sources, representing more than an order of magnitude increase in polymer-to-carbon conversion kinetics compared to that of a traditionally pyrolyzed analogue. Particularly, the ability of performing rapid carbonization without the use of additional substrates within the OMC precursor systems is advantageous. A systematic investigation of how plasma power, time, and gas atmosphere impact the resulting OMC pore textures and properties is performed, demonstrating the broad applicability of plasma-enabled carbonization methods. Furthermore, we demonstrate that the plasma treatment strategy can be extended to incorporate heteroatoms into the carbon framework by introducing ammonia gas, resulting in OMCs with a nitrogen content up to 4.7 at %, as well as non-Pluronic templating systems for synthesizing OMC with pore sizes larger than 10 nm. As employing a plasma source for materials pyrolysis is an industrially relevant approach, our system can be extended toward scaled synthesis of OMCs with much faster production rates.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Solar Photovoltaic Array With Mini-Dome Fresnel Lenses

Mini-dome Fresnel lenses concentrate sunlight onto individual photovoltaic cells. Facets of Fresnel lens designed to refract incident light at angle of minimum deviation to minimize reflective losses. Prismatic cover on surface of each cell reduces losses by redirecting incident light away from metal contacts toward bulk of semiconductor, where it is usefully absorbed. Simple design of mini-dome concentrator array easily adaptable to automated manufacturing techniques currently used by semiconductor industry. Attractive option for variety of future space missions.

Piszczor, Michael F., Jr.↗

Nonradiative Recombination Dominates Voltage Losses in Cu(In,Ga)Se 2 Solar Cells Fabricated using Different Methods

Voltage losses reduce the photovoltaic conversion efficiency of thin‐film solar cells and are a primary efficiency limitation in Cu(In,Ga)Se 2 . Herein, voltage loss analysis of Cu(In,Ga)Se 2 solar cells fabricated at three institutions with variation in process, bandgap, absorber structure, postdeposition treatment (PDT), and efficiency is presented. Nonradiative voltage losses due to Shockley–Read–Hall charge carrier recombination dominate and constitute >75% of the total compared to <25% from radiative voltage losses. The radiative voltage loss results from nonideal absorption and carriers in band tails that stem from local composition‐driven potential fluctuations. It is shown that significant bulk lifetime improvements are achieved for all alkali PDT processed absorbers, chiefly associated with reductions in nonradiative recombination. Primary voltage loss contributions (radiative and nonradiative) change little across fabrication processes, but variation in submechanisms (bulk lifetime, net acceptor concentration, and interface recombination) differentiate nonradiative loss pathways in this series of solar cells.

14 SOLAR ENERGY↗

Absorption of transverse spin current in ferromagnetic NiCu: Dominance of bulk dephasing over spin-flip scattering

In ferromagnetic metals, transverse spin currents are thought to be absorbed via dephasing—i.e., destructive interference of spins precessing about the strong exchange field. Yet, due to the ultrashort coherence length of ≈1 nm in typical ferromagnetic thin films, it is difficult to distinguish dephasing in the bulk from spin-flip scattering at the interface. Here, to assess which mechanism dominates, we examine transverse spin-current absorption in ferromagnetic NiCu alloy films with reduced exchange fields. We observe that the coherence length increases with decreasing Curie temperature, as weaker dephasing in the film bulk slows down spin absorption. Moreover, nonmagnetic Cu impurities do not diminish the efficiency of spin-transfer torque from the absorbed spin current. Our findings affirm that the transverse spin current is predominantly absorbed by dephasing inside the nanometer-thick ferromagnetic metals, even with high impurity contents.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Complementary Barrier Infrared Detector

The complementary barrier infrared detector (CBIRD) is designed to eliminate the major dark current sources in the superlattice infrared detector. The concept can also be applied to bulk semiconductor- based infrared detectors. CBIRD uses two different types of specially designed barriers: an electron barrier that blocks electrons but not holes, and a hole barrier that blocks holes but not electrons. The CBIRD structure consists of an n-contact, a hole barrier, an absorber, an electron barrier, and a p-contact. The barriers are placed at the contact-absorber junctions where, in a conventional p-i-n detector structure, there normally are depletion regions that produce generation-recombination (GR) dark currents due to Shockley-Read- Hall (SRH) processes. The wider-bandgap complementary barriers suppress G-R dark current. The barriers also block diffusion dark currents generated in the diffusion wings in the neutral regions. In addition, the wider gap barriers serve to reduce tunneling dark currents. In the case of a superlattice-based absorber, the superlattice itself can be designed to suppress dark currents due to Auger processes. At the same time, the barriers actually help to enhance the collection of photo-generated carriers by deflecting the photo-carriers that are diffusing in the wrong direction (i.e., away from collectors) and redirecting them toward the collecting contacts. The contact layers are made from materials with narrower bandgaps than the barriers. This allows good ohmic contacts to be made, resulting in lower contact resistances. Previously, THALES Research and Technology (France) demonstrated detectors with bulk InAsSb (specifically InAs0.91Sb0.09) absorber lattice-matched to GaSb substrates. The absorber is surrounded by two wider bandgap layers designed to minimize impedance to photocurrent flow. The wide bandgap materials also serve as contacts. The cutoff wavelength of the InAsSb absorber is fixed. CBIRD may be considered as a modified version of the THALES double heterostructure (DH) p-i-n device, but with even wider bandgap barriers inserted at the contact layer/absorber layer interfaces. It is designed to work with either bulk semiconductors or superlattices as the absorber material. The superlattice bandgap can be adjusted to match the desired absorption cutoff wavelength. This infrared detector has the potential of high-sensitivity operation at higher operating temperatures. This would reduce cooling requirements, thereby reducing the power, mass, and volume of the equipment and allowing an increased mission science return.

Ting, David Z.↗

A potential cyclotron line signature in low-luminosity X-ray sources

Estimates indicate there may be greater than or approximately equal to 10(exp 3) low-luminosity X-ray pulsars (L less than or approximately equal to 10(exp 34) ergs/s) in the Galaxy undergoing 'low-state' wind accretion in Be/X-ray binary systems, and approximately 10(exp 8)-10(exp 9) isolated neutron stars which may be accreting directly from the interstellar medium. Despite their low effective temperatures (kT(sub e) less than or approximately equal to 300 eV), low-luminosity accreting neutron stars with magnetic fields B approximately (0.7-7) x 10(exp 12) G could emit a substantial fraction (0.5%-5%) of their total luminosity in a moderately broadened (Epsilon/delta Epsilon approximately 2-4) cyclotron emission line which peaks in the energy range approximately 5-20 keV. The bulk of the thermal emission from these stars will be in the extreme ultraviolet/soft X-ray regime. In sharp contrast, the nonthermal cyclotron component predicted here will not be strongly absorbed, and consequently it may be the only distinguishing signature for the bulk of these low-luminosity sources. We propose a search for this cyclotron emission feature in long pointed observations of the newly discovered candidate isolated neutron star MS 0317.7-6477, and the Be/X-ray transient pulsar 4U 0115+63 in its quiescent state. We note that an emission-like feature similar to the one we predict here has been reported in the energy spectrum of the unusual X-ray pulsar 1E 2259+586.

Nelson, Robert W.↗