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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 73 records · Page 4
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Exotic silicon phases synthesized through ultrashort laser-induced microexplosion: Characterization with Raman microspectroscopy

Exotic metastable phases of silicon formed under high pressure are expected to have attractive semiconducting properties including narrow band gaps that open up novel technological applications. Confined microexplosions induced by powerful ultrashort laser pulses have been demonstrated as an advanced tool for the creation of new high-pressure phases that cannot be synthesized by other means. Tightly focused laser pulses are used to generate localized modifications inside the material structure, providing the possibility for precise controlled band-gap engineering. In this study, noninvasive Raman spectroscopy was used for analysis of laser-modified zones in silicon and to determine the metastable high-pressure phases contained. Low laser energies induced the formation of amorphous-only silicon, while higher energies led to crystalline silicon polymorphs within the modifications, albeit under considerable residual stress up to 4.5 GPa. The presence of the structurally similar r8-Si, bc8-Si, and bt8-Si phases is revealed, as well as other yet to be identified phases, and the stacking-related 9R Si polytype is evidenced, presumably stress-induced by the highly compressed laser-modified zone. The ab initio random structure searching approach is used to calculate the Raman signatures and to help identify different Si polymorphs. The findings of this study by Raman spectroscopy from ultrashort laser-induced microexplosion sites may yield insights into the local structure and properties of new silicon metastable phases and the prospect of utilizing exotic phases for extending current applications.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Spin-orbit-splitting-driven nonlinear Hall effect in NbIrTe 4

The Berry curvature dipole (BCD) serves as a one of the fundamental contributors to emergence of the nonlinear Hall effect (NLHE). Despite intense interest due to its potential for new technologies reaching beyond the quantum efficiency limit, the interplay between BCD and NLHE has been barely understood yet in the absence of a systematic study on the electronic band structure. Here, we report NLHE realized in NbIrTe 4 that persists above room temperature coupled with a sign change in the Hall conductivity at 150 K. First-principles calculations combined with angle-resolved photoemission spectroscopy (ARPES) measurements show that BCD tuned by the partial occupancy of spin-orbit split bands via temperature is responsible for the temperature-dependent NLHE. Our findings highlight the correlation between BCD and the electronic band structure, providing a viable route to create and engineer the non-trivial Hall effect by tuning the geometric properties of quasiparticles in transition-metal chalcogen compounds.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Local electric field measurement in GaN diodes by exciton Franz–Keldysh photocurrent spectroscopy

The eXciton Franz–Keldysh (XFK) effect is observed in GaN p–n junction diodes via the spectral variation of photocurrent responsivity data that redshift and broaden with increasing reverse bias. Photocurrent spectra are quantitatively fit over a broad photon energy range to an XFK model using only a single fit parameter that determines the line shape and the local bias (V l ), uniquely determining the local electric field maximum and depletion widths. As expected, the spectrally determined values of V l vary linearly with the applied bias (V) and reveal a large reduction in the local electric field due to electrostatic non-uniformity. The built-in bias (V bi ) is estimated by extrapolating V l at V=0, which, when compared with independent C-V measurements, indicates an overall ±0.31 V accuracy of V l . This demonstrates sub-bandgap photocurrent spectroscopy as a local probe of electric field in wide bandgap diodes that can be used to map out regions of device breakdown (hot spots) for improving electrostatic design of high-voltage devices.

42 ENGINEERING↗
DOE OSTI2021

Reduction of efficiency droop in c -plane InGaN/GaN light-emitting diodes using a thick single quantum well with doped barriers

We report on c-plane InGaN/GaN single quantum well (QW) light-emitting diodes (LEDs) of different well widths (3 or 9 nm) with and without doped barriers. QW barriers were doped with the aim of reducing the internal electric field (F QW ) in the QW to increase the electron-hole overlap, therefore increasing the recombination rates and resulting in the reduction of the efficiency droop. We, indeed, observed, through biased photocurrent spectroscopy, a reduction in F QW with doped barriers, with F QW being in the same direction of the p-n junction field at zero bias as opposed to the junction field for LEDs without doped barriers. Even with the improvement in the ground state wavefunction overlap, the ground state transition rate remains low for thick QWs. Transitions through excited states were observed for both thick QW LEDs with and without doped barriers. Here, the thick QW LED without doped barriers displayed low external quantum efficiency (EQE), likely as a result of the carrier overflow due to the poor confinement of carriers in the excited states. On the other hand, for LEDs with doped barriers, the flatter band in the QW resulting from the lower F QW reduces the energy separation between the eigenstates, leading to better confinement of carriers in the excited states. With doped barriers, we demonstrated a low efficiency droop 9-nm-thick single QW LED with a peak EQE of 42% at 40 A/cm 2 and an EQE of 36% at 400 A/cm 2 .

42 ENGINEERING↗
DOE OSTI2024

High-gradient performance of a prototype accelerator cavity for a 3 GeV proton radiography booster

This paper reports the design, fabrication, and results of the high-gradient conditioning and testing for a two-cell, π -mode, standing wave normal-conducting prototype booster cavity for the proposed 3 GeV proton linac upgrade at Los Alamos Neutron Science Center. Increasing the energy of proton beam from the existing 800 MeV to 3 GeV will improve resolution of the proton radiography by up to 10 times. The proposed energy boost can be achieved with a compact normal-conducting high-gradient radio-frequency (rf) linac section. The C-band section of the booster linac was designed with optimized-shaped copper accelerator cavities with distributed rf coupling. A short two-cell test prototype structure was designed for the frequency of 5.712 GHz, fabricated, and tested at the C-band Engineering Research Test Facility in New Mexico (CERF-NM) at Los Alamos National Laboratory. The maximum klystron power coupled into the test structure was 8.3 MW with 1 μ s pulse length and 100 Hz repetition rate. The breakdown probabilities were recorded as functions of the accelerating gradient and peak surface fields. Operation of the test cavity at accelerating gradients of up to 100 MV / m was demonstrated. Published by the American Physical Society 2024

43 PARTICLE ACCELERATORS↗
DOE OSTI2021

6 nm super-resolution optical transmission and scattering spectroscopic imaging of carbon nanotubes using a nanometer-scale white light source

Abstract Optical transmission and scattering spectroscopic microscopy at the visible and adjacent wavelengths denote one of the most informative and inclusive characterization methods in material research. Unfortunately, restricted by the diffraction limit of light, it cannot resolve the nanoscale variation in light absorption and scattering, diagnostics of the local inhomogeneity in material structure and properties. Moreover, a large quantity of nanomaterials has anisotropic optical properties that are appealing yet hard to characterize through conventional optical methods. There is an increasing demand to extend the optical hyperspectral imaging into the nanometer length scale. In this work, we report a super-resolution hyperspectral imaging technique that uses a nanoscale white light source generated by superfocusing the light from a tungsten-halogen lamp to simultaneously obtain optical transmission and scattering spectroscopic images. A 6-nm spatial resolution in the visible to near-infrared wavelength regime (415–980 nm) is demonstrated on an individual single-walled carbon nanotube (SW-CNT). Both the longitudinal and transverse optical electronic transitions are measured, and the SW-CNT chiral indices can be identified. The band structure modulation in a SW-CNT through strain engineering is mapped.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2025

Identification of short-range ordering motifs in semiconductors

Chemical short-range ordering is expected to be a key factor for tuning the electronic structure of semiconductors. However, experimental evidence of short-range ordering is still lacking due to the challenge of characterizing atomic-scale ordering motifs. Here, we determined the presence of short-range order in a ternary GeSiSn semiconductor system using advanced energy-filtered four-dimensional scanning transmission electron microscopy and large-scale atomistic models generated by a machine learning neuroevolution potential of first-principles accuracy. This approach revealed preferred ordering of different atomic species with the dominant occurrence of Si–Ge–Sn triplets. Our findings not only confirmed the presence of short-range order but also directly revealed the actual atomic structure, demonstrating the potential for informed atomic order–based band engineering as a third degree of freedom beyond composition and strain tuning.

Vogl, Lilian M. [University of California Berkeley↗
NASA NTRS2004

Statistical and Prediction modeling of the Ka Band Using Experimental Results from ACTS Propagation Terminals at 20.185 and 27.505 GHZ

With the increase in demand for wireless communication services, most of the operating frequency bands have become very congested. The increase of wireless costumers is only fractional contribution to this phenomenon. The demand for more services such as video streams and internet explorer which require a lot of band width has been a more significant contributor to the congestion in a communication system. One way to increase the amount of information or data per unit of time transmitted with in a wireless communication system is to use a higher radio frequency. However in spite the advantage available in the using higher frequency bands such as, the Ka-band, higher frequencies also implies short wavelengths. And shorter wavelengths are more susceptible to rain attenuation. Until the Advanced Communication Technology Satellite (ACTS) was launched, the Ka- band frequency was virtually unused - the majority of communication satellites operated in lower frequency bands called the C- and Ku- bands. Ka-band is desirable because its higher frequency allows wide bandwidth applications, smaller spacecraft and ground terminal components, and stronger signal strength. Since the Ka-band is a high frequency band, the millimeter wavelengths of the signals are easily degraded by rain. This problem known as rain fade or rain attenuation The Advanced Communication Technology Satellite (ACTS) propagation experiment has collected 5 years of Radio Frequency (RF) attenuation data from December 1993 to November 1997. The objective of my summer work is to help develop the statistics and prediction techniques that will help to better characterize the Ka Frequency band. The statistical analysis consists of seasonal and cumulative five-year attenuation statistics for the 20.2 and 27.5 GHz. The cumulative five-year results give the link outage that occurs for a given link margin. The experiment has seven ground station terminals that can be attributed to a unique rain zone climate. The locations are White Sands, NM, Tampa, Fly Clarksburg, MD, Norman, OK, Ft. Collins, COY Vancouver, BC, and Fairbanks, AK. The analysis will help us to develop and define specific parameters that will help system engineers develop the appropriated instrumentation and structure for a Ka-band wireless communication systems and networks.

Ogunwuyi, Oluwatosin O.↗
DOE OSTI2023

Insulators at fractional fillings in twisted bilayer graphene partially aligned to hexagonal boron nitride

At partial fillings of its flat electronic bands, magic-angle twisted bilayer graphene (MATBG) hosts a rich variety of competing correlated phases that show sample-to-sample variations. Divergent phase diagrams in MATBG are often attributed to the sublattice polarization energy scale, tuned by the degree of alignment of the hexagonal boron nitride (hBN) substrates typically used in van der Waals devices. Unaligned MATBG exhibits unconventional superconductor and correlated insulator phases, while nearly perfectly aligned MATBG/hBN exhibits zero-field Chern insulating phases and lacks superconductivity. Here we use scanning tunneling microscopy and spectroscopy (STM/STS) to observe gapped phases at partial fillings of the flat bands of MATBG in a new intermediate regime of sublattice polarization, observed when MATBG is only partially aligned (θ Gr-hBN ≈ 1.65°) to the underlying hBN substrate. Under this condition, MATBG hosts not only phenomena that naturally interpolate between the two sublattice potential limits, but also unexpected gapped phases absent in either of these limits. At charge neutrality, we observe an insulating phase with a small energy gap (Δ < 5 meV) likely related to weak sublattice symmetry breaking from the hBN substrate. In addition, we observe new gapped phases near fractional fillings ν = ±1/3 and ν = ±1/6, which have not been previously observed in MATBG. Importantly, energy-resolved STS unambiguously identifies these fractional filling states to be of single-particle origin, possibly a result of the super-superlattice formed by two moiré superlattices. Finally, our observations emphasize the power of STS in distinguishing single-particle gapped phases from many-body gapped phases in situations that could be easily confused in electrical transport measurements, and demonstrate the use of substrate engineering for modifying the electronic structure of a moiré flat-band material.

Physics↗
DOE OSTI2023

All-epitaxial resonant cavity enhanced long-wave infrared detectors for focal plane arrays

Here, we demonstrate a monolithic all-epitaxial resonant-cavity architecture for long-wave infrared photodetectors with substrate-side illumination. An nBn detector with an ultra-thin (t ≈ 350 nm) absorber layer is integrated into a leaky resonant cavity, formed using semitransparent highly doped (n⁺⁺) epitaxial layers, and aligned to the anti-node of the cavity’s standing wave. The devices are characterized electrically and optically and demonstrate an external quantum efficiency of 25% at T ¼ 180 K in an architecture compatible with focal plane array configurations.

42 ENGINEERING↗
DOE OSTI2022

Orderly disorder in magic-angle twisted trilayer graphene

Magic-angle twisted trilayer graphene (TTG) has recently emerged as a platform to engineer strongly correlated flat bands. We reveal the normal-state structural and electronic properties of TTG using low-temperature scanning tunneling microscopy at twist angles for which superconductivity has been observed. Real trilayer samples undergo a strong reconstruction of the moiré lattice, which locks layers into near–magic-angle, mirror symmetric domains comparable in size with the superconducting coherence length. This relaxation introduces an array of localized twist-angle faults, termed twistons and moiré solitons, whose electronic structure deviates strongly from the background regions, leading to a doping-dependent, spatially granular electronic landscape. The Fermi-level density of states is maximally uniform at dopings for which superconductivity has been observed in transport measurements.

Science & Technology - Other Topics↗
DOE OSTI2025

Effects of chemical disorder and spin-orbit coupling on the electronic-structure and Fermi-surface topology of YbSb-based monopnictides

Here, in this work, we study the influence of disorder on the electronic structure of YbSb—a rare-earth monopnictide featuring a simple rocksalt (B1) crystal structure and a well-defined Fermi-surface topology—by employing first-principles density-functional theory. We focus on chemical disorder introduced through Te and Al doping, selected based on their thermodynamic stability in alloyed configurations, to understand how such perturbations modify the electronic states of YbSb. Our results indicate that Te doping predominantly introduces electronlike states at the 𝑋 and 𝐿 points, while Al doping leads to a suppression of holelike states at Γ, effectively driving the system from a semimetallic state to one characterized by very narrow-gap behavior at Γ. This modulation of the Fermi surface, particularly the reduction of central hole pockets at Γ, plays a central role in altering interpocket scattering—a mechanism critical for tuning quantum transport properties, including superconductivity. This disorder-driven modulation of the Fermi surface, particularly the suppression of central hole pockets at Γ, controls interpocket scattering, which is essential for optimizing quantum transport properties, including superconductivity. Our results show that disorder can be effectively used for engineering band topology, thereby tuning quantum related response through a tailored electronic structure.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

Constructing uniform oxygen defect engineering on primary particle level for high-stability lithium-rich cathode materials

Lithium-rich layered cathode materials are considered to be research focus of cathode candidates for next generation lithium-ion batteries due to their high specific capacity and low cost. However, lattice deoxidation associated with elemental migration and internal local shrinkage usually results in deteriorated cyclic performance and notorious voltage attenuation, severely limiting its application. In this paper, we have successfully injected uniform oxygen defects into surface region of Li 1.2 Ni 0.13 Co 0.13 Mn 0.54 O 2 primary particles under the high-pressure and weak carbonate environment. Various experimental investigations indicate that the injected robust oxygen defects can not only mitigate detrimental interfacial reactions but also suppress unfavorable lattice variation and particle breakage. More importantly, theoretical calculations unravel the critical roles of oxygen defects in regulating energy band structure for strengthened anionic reversibility. Owing to stabilization effects of unique oxygen defect engineering, the modified Li 1.2 Ni 0.13 Co 0.13 Mn 0.54 O 2 cathode has harvested dramatically enhanced electrochemical performance including a high initial coulombic efficiency of 96.6%, an outstanding capacity retention of 91.96% (1C, 200 cycles) and suppressed voltage decay of only 1.62 mV per cycle. Therefore, this facile and effective defect engineering strategy could establish new guidance for promoting practical application of Li-rich Mn-based cathode material.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

Connectivity-Dependent Exciton–Phonon Coupling in Cesium Bismuth Halide Quantum Dots

Metal halide octahedra form the fundamental functional building blocks of metal halide perovskites, dictating their structures, optical properties, electronic structures, and dynamics. Here, in this study, we show that the connectivity of bismuth halide octahedra in Cs 3 Bi 2 Br 9 and Cs 3 Bi 2 I 9 quantum dots (QDs) changes with different halide elements. We use first-principles calculations to reveal the key role of the connectivity of bismuth halide octahedra on the wave function symmetry, Huang-Rhys factor, and exciton-phonon interaction strength. Following QD synthesis via a ligand-mediated transport method, the effect of connectivity is verified with transient absorption spectroscopy, where we contrast Cs 3 Bi 2 Br 9 and Cs 3 Bi 2 I 9 QD exciton dynamics. In photoexcited Cs 3 Bi 2 I 9 QDs, phonons related to the vibrational motions of face-sharing [BiI 6 ] 3- bioctahedra couple strongly to the electronic state and drive rapid carrier relaxation. Equivalent signals are not observed for photoexcited Cs 3 Bi 2 Br 9 QDs, implying a lack of phonon involvement in band-edge absorption and subsequent exciton relaxation. Our findings suggest that structural engineering can effectively tune the exciton-phonon coupling and therefore influence exciton relaxation and recombination in perovskite nanomaterials.

TDDFT↗
DOE OSTI2020

Out-of-Plane Magnetic Anisotropy Engineered via Band Distortion in Two-Dimensional Materials

We unveil the connection between magnetic anisotropy and band structures in Γ-specialized In 2 Se 3 /Fe 3 GeTe 2 heterostructure, through first-principles calculations. A significant band distortion occurs near the Γ point with a formed valley. As the band-distortion-caused valley moves relative to the quasivalence band maximum, the magnetic anisotropy switches between in-plane and out-of-plane magnetic anisotropy. Such a rule applies to either the strained or polarization-switched In 2 Se 3 /Fe 3 GeTe 2 heterostructure. Furthermore, these findings demonstrate the feasibility of predicting the magnetic anisotropy by band structure modification in two-dimensional magnetic systems.

2-dimensional systems↗
DOE OSTI2020

Strain-engineered high-responsivity MoTe 2 photodetector for silicon photonic integrated circuits

In integrated photonics, specific wavelengths are preferred such as 1550 nm due to low-loss transmission and the availability of optical gain in this spectral region. For chip-based photodetectors, layered two-dimensional (2D) materials bear scientific and technologically relevant properties such as electrostatic tunability and strong light-matter interactions. However, no efficient photodetector in the telecommunication C-band has been realized with 2D transition metal dichalcogenide materials due to their large optical bandgap. Furthermore, we demonstrate a MoTe 2 -based photodetector featuring strong photoresponse (responsivity = 0.5 A/W -1 ) operating at 1550 nm in silicon photonics enabled by strain engineering the 2D material. Non-planarized waveguide structures show a locally-induced bandgap change of 0.2 eV inside MoTe 2 , resulting in large photo-response, in an otherwise photo-inactive medium when unstrained. Unlike Graphene-based photodetectors relying on a gapless band structure, this photodetector shows a ~100X improved dark current, enabling an efficient noise equivalent power of 90 pW/Hz -0.5 . Such strain-engineered integrated photodetector provides new opportunities for integrated optoelectronic systems.

47 OTHER INSTRUMENTATION↗
DOE OSTI2021

Chiral Topological Surface States on a Finite Square Photonic Crystal Bounded by Air

Chiral, topologically protected, photonic surface states can be found at the boundary between gyrotropic photonic crystals where a changing magnetic field induces different topology across the interface. Typically, photonic crystals with either a suitable band structure on both sides of the interface to provide a band gap and evanescent decay of the surface states away from the interface, or an outer layer with engineered material properties is required. In this paper, we show the emergence of topological, unidirectional surface states at the termination of finite gyrotropic photonic crystals with a simple square lattice and C 4 rotational symmetry bounded by a vacuum, eliminating the need for an outside layer to enable chiral surface modes. Here, we start from an infinite, time-reversal-symmetry-breaking photonic crystal with a band gap associated with bands with nonzero Chern numbers, different from all-zero Chern numbers in air. We then modify the photonic crystal to move this band gap below the light line, while maintaining the Chern-number discontinuities. Band-structure calculations for a supercell approximating a photonic crystal finite in the direction normal to the surface demonstrate the existence, dispersion, and chirality of the surface mode. Extensive direct scattering calculations for a point source and spatial Fourier analysis further reveal a unidirectional free-space topological surface state, which propagates counterclockwise around the surface of a finite photonic crystal, providing a nearly foolproof way to cross-check the surface-mode band structure unaffected by backscattering from local defects. Additionally, scattering simulations allow an independent characterization of the state dispersion and unveil the robustness of the topological plasmonic mode propagation around the 90° bends of the structure, being due to only radiation leakage. In contrast to buried topological surface states, the observed surface modes at the photonic crystal–air interface have the advantage of being accessible to the outside world, allowing one to take advantage of the defect-tolerant backscattering-free surface modes to engineer emission from photonic crystal surfaces into arbitrary free-space beam shapes and directions.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2022

Design considerations for gallium arsenide pulse compression photoconductive switch

In this paper, we present the physics and design-space exploration of a novel pulse compression photoconductive switch (PCPS) using semi-insulating gallium arsenide (GaAs) operating in the negative differential mobility (NDM) regime of electron transport. We systematically quantify the relationship between the PCPS performance and various design options, including contact separation, laser energy and placement, and trap dynamics. Specifically, we report the full-width at half-maximum and the peak output current generated by the PCPS as a function of applied electrical and optical bias. We discuss the optimal spacing between the electrodes and the distance of the laser spot to the anode to achieve higher electron confinement and superior radio-frequency (RF) metrics. Reducing the laser energy is important to prevent the appearance of secondary peaks due to diffusive transport, but there exists a trade-off between the bandwidth and the maximum current of the PCPS. We also compare the PCPS response with and without trap dynamics and find that the electrostatic screening from the trap-induced space charge is time-independent when the trapping time constant is set larger than the recombination lifetime. Overall, trap dynamics are detrimental to performance, unless the compensation doping scheme to achieve semi-insulating GaAs is carefully selected. Results presented in this paper can be used by experimentalists to fine-tune the PCPS design parameters to meet the specifications of various RF applications. Moreover, our results will provide a strong theoretical basis to the measurements of PCPS devices using GaAs and other NDM materials under investigation.

42 ENGINEERING↗