Design of a 10 MeV, 1000 kW average power electron-beam accelerator for wastewater treatment applications
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43 PARTICLE ACCELERATORS↗
SEARCH · Engineering Papers
Results for “application of power electronics”
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Compact, High-Power Superconducting Electron Linear Accelerators for MW Industrial Applications [Slides]
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43 PARTICLE ACCELERATORS↗
Investigating Secondary Electron Yield of Insulating Materials for Pulsed Power Applications.
Abstract not provided.
Kern, I.↗
Making Wireless Power Matter (CRADA Final Report)
The Resonant Link project team investigated the integration of their novel, self-resonant magnetic structure for electromagnetic coils into inductive wireless power transfer systems. Relative to conventional wireless power coils, their multi-layer self-resonant structure (the “MSRS”) reduces losses by up to 6x and lowers to BOM cost by up to 10x. These power-dense, cost-effective coils are a promising path towards the first value-add wireless power systems in a variety of applications, from phones to medical devices to kitchen appliances to mobile robots to electric vehicles. The researchers explored development of the power electronics for wireless power transfer systems using the multi-layer self-resonant structure (MSRS) concept that efficiently transmits power over air gaps for in-home applications, including through-wall power transfer, appliances built around the Ki and Qi standards, and other potential use cases This project specifically focused on the power electronics design, development, and testing for these applications. Resonant Link’s proprietary wireless power technology holds the promise of matching the performance of wired chargers in size and efficiency, especially when operated from a DC distribution grid.
42 ENGINEERING↗
Use of Grid-Forming Medium-Voltage Power Electronics Hub in a Microgrid Setting
This paper presents the application of a new design of a multiport, modular, medium-voltage power electronics hub (M3PE-HUB) in a microgrid setting. The M3PE-HUB system was modeled in a digital real-time simulator (DRTS) and integrated into the Banshee microgrid test system. This paper presents the preliminary DRTS simulation-based results of the M3PE-HUB system connected in a test microgrid system. Verification and validation of the M3PE-HUB architecture and controls in the test microgrid setting are the primary contributions of this work. The results of the operation during the islanding and resynchronization process indicate the feasibility of the proposed architecture in a microgrid setting. This paper also presents results for a system reconfiguration use case where the M3PE-HUB was used to reconfigure the system under a fault condition.
grid forming↗
Ultrathin stable Ohmic contacts for high-temperature operation of β -Ga2O3 devices
Beta gallium oxide (β-Ga2O3) shows significant promise in high-temperature, high-power, and sensing electronics applications. However, long-term stable metallization layers for Ohmic contacts at high temperatures present unique thermodynamic challenges. The current most common Ohmic contact design based on 20 nm of Ti has been repeatedly demonstrated to fail at even moderately elevated temperatures (300–400 °C) due to a combination of nonstoichiometric Ti/Ga2O3 interfacial reactions and kinetically favored Ti diffusion processes. Here, we demonstrate stable Ohmic contacts for Ga2O3 devices operating up to 500–600 °C using ultrathin Ti layers with a self-limiting interfacial reaction. The ultrathin Ti layer in the 5 nm Ti/100 nm Au contact stack is designed to fully oxidize while forming an Ohmic contact, thereby limiting both thermodynamic and kinetic instability. This novel contact design strategy results in an epitaxial conductive anatase titanium oxide interface layer that enables low-resistance Ohmic contacts that are stable both under long-term continuous operation (>500 h) at 600 °C in vacuum (≤10−4 Torr), as well as after repeated thermal cycling (15 times) between room temperature and 550 °C in flowing N2. This stable Ohmic contact design will accelerate the development of high-temperature devices by enabling research focus to shift toward rectifying interfaces and other interfacial layers.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Ultrawide bandgap semiconductor heterojunction p–n diodes with distributed polarization-doped p-type AlGaN layers on bulk AlN substrates
Ultrawide bandgap heterojunction p–n diodes with polarization-induced AlGaN p-type layers are demonstrated using plasma-assisted molecular beam epitaxy on bulk AlN substrates. Current–voltage characteristics show a turn-on voltage of Vbi≈5.5 V, a minimum room temperature ideality factor of η≈1.63, and more than 12 orders of current modulation at room temperature. A stable current operation of the ultrawide bandgap semiconductor diode is measured up to a temperature of 300 °C. The one-sided n+–p heterojunction diode design enables a direct measurement of the spatial distribution of polarization-induced mobile hole density in the graded AlGaN layer from the capacitance–voltage profile. The measured average mobile hole density is p∼5.7×1017 cm−3, in close agreement with what is theoretically expected from distributed polarization doping. Light emission peaked at 260 nm (4.78 eV) observed in electroluminescence corresponds to interband radiative recombination in the n+ AlGaN layer. A much weaker deep-level emission band observed at 3.4 eV is attributed to cation-vacancy and silicon complexes in the heavily Si-doped AlGaN layer. These results demonstrate that distributed polarization doping enables ultrawide bandgap semiconductor heterojunction p–n diodes that have wide applications ranging from power electronics to deep-ultraviolet photonics. These devices can operate at high temperatures and in harsh environments.
Physics↗
Reduced trap state density in AlGaN/GaN HEMTs with low-temperature CVD-grown BN gate dielectric
In this Letter, low-temperature (400 °C) chemical vapor deposition-grown boron nitride (BN) was investigated as the gate dielectric for AlGaN/GaN metal–insulator–semiconductor high electron mobility transistors (MISHEMTs) on a Si substrate. Comprehensive characterizations using x-ray photoelectron spectroscopy, reflection electron energy loss spectroscopy, atomic force microscope, high-resolution transmission electron microscopy, and time-of-flight secondary ion mass spectrometry were conducted to analyze the deposited BN dielectric. Compared with conventional Schottky-gate HEMTs, the MISHEMTs exhibited significantly enhanced performance with 3 orders of magnitude lower reverse gate leakage current, a lower off-state current of 1 × 10−7 mA/mm, a higher on/off current ratio of 108, and lower on-resistance of 5.40 Ω mm. The frequency-dependent conductance measurement was performed to analyze the BN/HEMT interface, unveiling a low interface trap state density (Dit) on the order of 5 × 1011–6 × 1011 cm−2 eV−1. This work shows the effectiveness of low-temperature BN dielectrics and their potential for advancing GaN MISHEMTs toward high-performance power and RF electronics applications.
Physics↗
Carrier Diffusion Lengths in Continuously Grown and Etched-and-Regrown GaN Pin Diodes
Advanced GaN power devices are promising for many applications in high power electronics but performance limitations due to material quality in etched-and-regrown junctions prevent their widespread use. Carrier diffusion length is a critical parameter that not only determines device performance but is also a diagnostic of material quality. Here we present the use of electron-beam induced current to measure carrier diffusion lengths in continuously grown and etched-and-regrown GaN pin diodes as models for interfaces in more complex devices. Variations in the quality of the etched-and-regrown junctions are observed and shown to be due to the degradation of the n-type material. Finally, we observe an etched-and-regrown junction with properties comparable to a continuously grown junction.
42 ENGINEERING↗
Computational Evaluation of Thermal Response of Open-Cell Foam With Circular Pore (Computional Evaluation of Thermal Response of Open-Cell Foam with Circular Pore)
The evaluation of effective material properties in heterogeneous materials (e.g., composites or multicomponent structures) critically relevant to a wide spectrum of applications, including nuclear power, electronic packaging, flame retardants, hypersonics, and gas turbine power. The work described in this paper is centered around the numerical assessment of the thermal behavior of porous materials obtained from finite element thermal modeling and simulation. Here, two-dimensional, steady state analyses were performed on unit cells with centered, circular pores using a second order accurate Galerkin finite element method (FEM). The effective thermal conductivities of the porous systems were examined, encompassing a range of porosities from 4.9% to 60.1%. The geometries of the models were generated based on ordered circular pores for each modeled porosity level. The system response quantity (SRQ) under investigation was the dimensionless effective thermal conductivity across the unit cell. The dimensionless effective thermal conductivity was compared across all simulated cases, producing a trend between porosity and effective thermal conductivity. In the presented investigation, the method of manufactured solutions (MMS) was used to perform code verification, and the grid convergence index (GCI) was employed to estimate discretization uncertainty as solution verification. Code verification concluded an approximately second order accurate Galerkin FEM solver. It was found that the introduction of porosity to the unit cell material structure reduces effective thermal conductivity, as anticipated. Numerical results obtained in this study are compared to an analytical solution and to a sample of empirical data.
36 MATERIALS SCIENCE↗
Physics-Informed Neural Networks for Heat Transfer Problems
Abstract Physics-informed neural networks (PINNs) have gained popularity across different engineering fields due to their effectiveness in solving realistic problems with noisy data and often partially missing physics. In PINNs, automatic differentiation is leveraged to evaluate differential operators without discretization errors, and a multitask learning problem is defined in order to simultaneously fit observed data while respecting the underlying governing laws of physics. Here, we present applications of PINNs to various prototype heat transfer problems, targeting in particular realistic conditions not readily tackled with traditional computational methods. To this end, we first consider forced and mixed convection with unknown thermal boundary conditions on the heated surfaces and aim to obtain the temperature and velocity fields everywhere in the domain, including the boundaries, given some sparse temperature measurements. We also consider the prototype Stefan problem for two-phase flow, aiming to infer the moving interface, the velocity and temperature fields everywhere as well as the different conductivities of a solid and a liquid phase, given a few temperature measurements inside the domain. Finally, we present some realistic industrial applications related to power electronics to highlight the practicality of PINNs as well as the effective use of neural networks in solving general heat transfer problems of industrial complexity. Taken together, the results presented herein demonstrate that PINNs not only can solve ill-posed problems, which are beyond the reach of traditional computational methods, but they can also bridge the gap between computational and experimental heat transfer.
Engineering↗
GATE Center of Excellence in Innovative Drivetrains in Electric Automotive Technology Education (IDEATE) (Final Report)
The IDEATE project recognized that this is a critical point in history where advanced engineering solutions are required to propel the U.S. automotive industry irrevocably to the next level: the electrified drivetrain. The existing workforce is not sufficient to this task. It is imperative that automotive engineers with traditional backgrounds focused on internal-combustion and mechanical-drivetrain technologies be retrained with the most current advanced solutions in battery controls and vehicle power electronics. For the long-term success of the U.S. automakers, it is even more important that a future workforce be developed that has both broad and deep comprehension of the issues involved and the most advanced solutions known to these problems. Two campuses of the University of Colorado system joined forces to establish the GATE Center of Excellence in Innovative Drivetrains in Electric Automotive Technology Education (IDEATE). The University of Colorado Boulder (CU-Boulder) is widely regarded as having one of the top graduate programs in power electronics in the country; the University of Colorado Colorado Springs (UCCS) has unrivaled expertise in algorithms for automotive battery control. By collaborating, IDEATE built on our team’s proven strengths to develop innovative curricula and to initiate courses and programs that have provided (and continue to provide) students with a unique opportunity for holistic and specialty education in electric drivetrain technology (part-way through the project, we invited Utah State University to join the project, adding to our strength in power electronics for battery application).
42 ENGINEERING↗
Computational Fermi Level Engineering and Doping-Type Conversion of Ga2O3 Via Three-Step Processing
Ga2O3 is being actively explored for power electronics, and other applications due to its ultra- wide bandgap and low projected fabrication cost of high-quality crystals. N-type doping of Ga2O3 can be achieved and tuned, but p-type doping faces fundamental obstacles. Successful engineering of Ga2O3 based devices requires critical control of doping density, Fermi level position, providing opportunities for predictive process simulation. We use first-principles defect equilibrium calculations to simulate a 3-step growth- annealing-quench protocol for hydrogen assisted Mg doping in Ga2O3, taking into account the hydrogen- oxygen-water gas phase equilibrium. We predict type conversion to a net p-type regime following O-rich annealing after growth under reducing conditions in the presence of H2. We show that there is an optimal temperature that maximizes the net acceptor density during the equilibrium annealing step for a given Mg doping level. Quenching of non-equilibrium annealed samples then results in a Fermi level EF below mid-gap down to about EV +1.5 eV, creating a significant number of uncompensated neutral MgGa0 acceptors. This type converted Ga2O3 can create significant built-in field in a p-n junction with an adjoining n-type material and could enable vertical MOSFETs.
CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS,M↗
High Speed Medium Voltage CHP System with Advanced Grid Support
The project was a collaboration between Clemson University and TECO Westinghouse Motor Company. The goal of the project was to develop a medium voltage commercial grid-tied system with advanced grid support functions. Current state-of-the-art in medium voltage, multi-megawatt power electronic systems do not support advanced grid functions, traditionally due to power electronic limitations and required applications. The developed system is capable of interacting with the power system at the distribution level to efficiently integrate gas turbine generation systems or any other ac generation system with up to 20MWe of power production capacity. This project demonstrated a high level of technical readiness of the 1MW, 500Hz, 15000 RPM high frequency Combined Heat and Power (CHP) generator and electric machine system, utilizing advanced grid support functions required by IEEE Std. 1547-2018.
32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗
Power Converter Topologies for Electrolyzer Applications to Enable Electric Grid Services
Hydrogen electrolyzers, with their operational flexibility, can be configured as smart dynamic loads which can provide grid services and facilitate the integration of more renewable energy sources into the electrical grid. However, to enable this ability, the electrolyzer system should be able to control both active and reactive power in coordination with the low-level controller of the electrolyzer via the power electronics system interface between the utility grid and electrolyzer. This paper discusses power converter topologies and the control scheme of this power electronics interface for electrolyzer applications to enable electricity grid services. For the sake of unity, in this paper, we consider the power converter system interfacing the utility grid at the line-to-line root mean square (RMS) value of 480 VAC-60 Hz and supplying to the 3500 A-750 kW PEM electrolyzer stack.
electrolyzer↗
Compact, high-power superconducting radio-frequency accelerators for environmental applications
Electron-beam irradiation has been proven to destructively reduce or eliminate a wide variety of organic chemicals, viruses and bacteria from wastewater, as well as reducing sulfur and nitrous oxides emission from coal-fired power plants. It is estimated that there are approximately 30,000 such particle accelerators in use worldwide for industrial processes including surface and bulk processing of material, medical sterilization, and environmental remediation. Maximum beam power from accelerators used in these applications is currently limited to less than 500 kW, and a higher beam power is needed to reduce treatment costs. The market availability of continuous-wave (CW) electron-beam accelerators with power of the order of ~100 kW is also very limited. Superconducting radio-frequency (SRF) linear accelerators (linacs) are commonly used at basic research laboratories throughout the world due to their exceptionally high efficiency as compared to current industrial varieties. Recent advances in cryogenics, SRF thin films and high-power magnetrons allow for the design of increasingly compact and efficient CW SRF electron linacs in the energy range 1-10 MeV, with up to 1 MW of beam power. A new class of compact, high-efficiency electron-beam accelerators may provide cost-effective solutions for a range of industrial and environmental remediation applications, particularly with respect to tackling one such class of contaminants so-called forever chemicals, including per- and polyfluoroalkyl substances (PFASs), which are ubiquitous in a wide range of products and for which there is currently no effective destruction technology. We have recently demonstrated the key technologies required for such accelerators by: 1) operating a Nb3Sn SRF accelerating cavity cooled by commercial cryocoolers up to an accelerating gradient of 12.4 MV/m and 2) demonstrating the phase-locking as well as a high-efficiency power combining scheme for industrial magnetron transmitters. In this presentation, we will introduce the principles and benefits of MW-class SRF linacs, based on the conduction-cooled SRF technology that we have demonstrated for environmental remediation. We propose the development of a 4 MeV, 20 kW prototype to be built at Jefferson Lab as a first accelerator demonstrator unit. We will also present the results from samples study on the effect of electron-beam irradiation on so-called forever chemicals such as 1,4-dioxane and PFAS, using an existing multi-purpose 10 MeV, low-power, CW SRF linac at Jefferson Lab.
Ciovati, Gianluigi↗
Compact, high-power superconducting electron linear accelerators for environmental and industrial applications: projects and status
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72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
Structure-property relationships and mobility optimization in sputtered La-doped BaSn O 3 films: Toward 100cm 2 V -1 s -1
he wide band gap semiconducting perovskite BaSnO 3 is of high current interest due to outstanding room temperature mobility at high electron density, fueled by potential applications in oxide, transparent, and power electronics. Due in part to a lack of lattice-matched substrates, BaSnO 3 thin films suffer from high defect densities, however, limiting electron mobility. Additionally, the vast majority of BaSnO 3 thin film research has focused on pulsed laser deposition or molecular beam epitaxy. In this work, we present an exhaustive optimization of the mobility of Ba 0.98 La 0.02 SnO 3 films grown by a scalable, high-throughput method: high-pressure-oxygen sputter deposition. Considering target synthesis conditions, substrate selection, buffer layer structure, deposition temperature, deposition rate, thickness, and postdeposition annealing conditions, and by combining high-resolution x-ray diffraction, reciprocal space mapping, rocking curve analysis, scanning transmission electron microscopy, atomic force microscopy, and temperature-dependent electronic transport measurements, detailed understanding of synthesis-structure-property relationships is attained. Optimized room temperature mobility of 96 cm 2 V –1 s –1 is achieved in vacuum-annealed GdScO 3 (110)/BaSnO 3 (120 nm)/Ba 0.98 La 0.02 SnO 3 (200 nm) heterostructures, as well as 92 cm 2 V –1 s –1 on unbuffered substrates and 87 2 V –1 s –1 without postdeposition annealing. These results, including important trends in defect densities and a surprising dependence of mobility on lattice mismatch, substantially expand the understanding of the interplay between deposition conditions, microstructure, and transport in doped BaSnO 3 films, establishing competitive mobilities in films fabricated via a scalable, high-throughput, industry-standard technique.
36 MATERIALS SCIENCE↗