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At least 73 records · Page 4

Moessbauer studies in Zn(2+)0.3 Mn(2+)0.7 Mn(3+) (2-y) Fe(3+) (2-y) O4

The Mossbauer effect has proven to be effective in the study of nuclear hyperfine interactions. Ferrite systems having the formula (Zn(2+)0.3)(Mn(2+)0.7)(Mn(3+)y)(Fe(3+)2-y)(O4) were prepared and studied. These systems can be interpreted as mangacese-doped zinc and a part of iron ions. A systematic study of these systems is presented to promote an understanding of their microstructure for which various theories were proposed.

Gupta, R. G.↗

Laser operation by dissociation of metal complexes. II - New transitions in Cd, Fe, Ni, Se, Sn, Te, V, and Zn

The reported investigation is a continuation of a study conducted by Chou and Cool (1976). The experimental results discussed are partly related to laser transitions in Cd(I), Cd(II), and Zn(II). Laser transitions in Fe(I), Ni(I), Sn(I), Te(I), and V(I) are also considered along with the observation of a laser pulse with two peaks in connection with the study of laser transitions in Se(I). Experiments related to prospective visible laser operation in thallium at 6550 and 6714 are also discussed, giving attention to spontaneous emission measurements at 6550 and 5350 A, the effects of additive molecules, and laser cavity experiments at 6550 and 6714 A.

Chou, M. S.↗

Recognition of lunar glass droplets produced directly from endogenous liquids - The evidence from S-ZN coatings

Concentrated deposits of ultramafic droplets of green glass at Apollo 15 and orange and black glass at Apollo 17 are generally accepted as having volcanic, and so endogenous, origins. Since these droplets have S + Zn surface coatings with characteristics that fit a volcanic origin, the presence of similar coatings on dispersed droplets are taken as a good criterion of their volcanic origin. This criterion in concert with other criteria (homogeneity, absence of shocked relicts) that distinguish between volcanic and impact origins, has led to identification of a new ultramafic endogenous liquid that was erupted at Apollo 15. The brown glass droplets representing this liquid have a higher TiO2 content and are more mafic than any of the Apollo 15 basalts.

Butler, P., Jr.↗

Deep-level transient spectroscopy studies of Ni- and Zn-diffused vapor-phase-epitaxy n-GaAs

The paper presents deep-level transient spectroscopy studies of Ni- and Zn-diffused vapor-phase epitaxy n-GaAs. Nickel diffused into VPE n-GaAs reduces the hole diffusion length L sub p from 4.3 to 1.1 microns. Deep-level transient spectroscopy was used to identify energy levels in Ni-diffused GaAs; the as-grown VPE GaAs contains traces of these levels and an electron trap. Ni diffusion reduces the concentration of this level by an amount that matches the increase in concentration of each of the two Ni-related levels. A technique for measuring minority-carrier capture cross sections was developed, which indicates that L sub p in Ni-diffused VPE n-GaAs is controlled by the E sub c - 0.39 eV defect level.

Partin, D. L.↗

Experimental electron energy-loss spectra and cross sections for the 4/2/S - 4/2/P transition in Zn II

Electron energy-loss spectra and differential cross sections are reported for inelastic scattering from Zn II. Measurements were carried out in a crossed electron beam-ion beam apparatus, at incident electron energies of 30, 40, 50, 60, 75, 85, and 100 eV, and at a scattering angle of 14 deg. The present results are the first reported measurements of inelastic electron scattering from an ion.

Chutjian, A.↗

Angular distribution for electron excitation of the 4(2)S yields 4(2)P transition in Zn II - Comparison of experiment and theory

Differential electron-scattering cross sections for inelastic excitation of an ion have been measured for the first time. Experiments were carried out in a cross electron-ion beam geometry for the 4(2)S yields 4(2)P transition in Zn II at 75 eV. In addition, differential cross sections were calculated at energies between 15 and 100 eV in a five-state close-coupling approximation in which 4s, 4p, 3d(9)4s(2), 5s, and 4 d states were included. Agreement in shape between theory and experiment at 75 eV is excellent.

Chutjian, A.↗

Abundances of O, Mg, S, Cr, Mn, Ti, Ni and Zn from absorption lines of neutral gas in the Large Magellanic Cloud in front of R136

Weak absorption lines of C I, O I, Mg I, Mg II, Si I, Si II, P I, Cl I, Cr II, Mn II, Fe I, Ni II, Zn II, CO and C2 are detected in neutral gas in front of the 30 Doradus H II region by IUE spectra of R 136. The Large Magellanic Cloud abundances from the absorption lines are a factor of 2 or 3 below those of the Milky Way, in agreement with emission line study results. Neutral gas density and temperature are estimated from the observed excitation and ionization to be about 300/cu cm and 100 K, respectively; this implies a gas pressure of 30,000/cu cm K.

De Boer, K. S.↗

Transient response of Ge:Be and Ge:Zn FIR photoconductors under low background photon flux conditions

An experimental study of the transient behavior of Ge:Be and Ge:Zn photoconductors to changes in photon flux rates has been performed under the low background flux conditions (10 to the 8th photon/s) typical of astronomy and astrophysics applications. A characteristic transient behavior with time constants ranging from 0.1 to greater than 5 s has been observed in both materials when the shallow levels are very closely compensated. The detector response consists of both a fast and a slow component. The amplitude of the slow component can be up to 10 times greater than the initial fast component. It has been established that this phenomenon cannot be explained by current models of carrier sweep-out or dielectric relaxation. The transient behavior has been characterized as a function of temperature, electric field, photoconductive gain and material parameters.

Haegel, N. M.↗

Laser-produced spectra and QED effects for Fe-, Co-, Cu-, and Zn-like ions of Au, Pb, Bi, Th, and U

Spectra of very highly charged ions of Au, Pb, Bi, Th, and U have been observed in laser-produced plasmas generated by the OMEGA laser. Line identifications in the region 9-110 A were made for ions in the Fe, Co, Cu, and Zn isoelectronic sequences. Comparison of the measured wavelengths of the Cu-like ions with values calculated with and without QED corrections shows that the inclusion of QED corrections greatly improves the accuracy of the calculated 4s-4p wavelengths. However, significant differences between the observed and calculated values remain.

Seely, J. F.↗

Transitions in Fe-, Co-, Cu-, and Zn-like ions of W and Re

The spectra of highly ionized W and Re were observed by using laser-produced plasmas and a 3-m grazing-incidence spectrograph. Transitions in Fe- through Zn-like ions were identified. Wavelengths in the range 7-75 A were measured with an uncertainty of + or - 0.015 A, and energy levels were derived from the measured wavelengths. The ionization limits of Cu-like W and Re were determined.

Seely, J. F.↗

Modeling of collision and coalescence of droplets during microgravity processing of Zn-Bi immiscible alloys

A population balance model is presented for the coarsening of the dispersed phase of liquid-liquid two-phase mixtures in microgravity due to gravity sedimentation and Marangoni migration, which lead to the collision and coalescence of droplets. The model is used to predict the evolution of the size distribution of the dispersed phase in a liquid-phase miscibility gap system, Zn-Bi, which has been used in a number of experimental microgravity processing studies in which significant phase segregation has been observed. The analysis shows that increasing the temperature gradient, gravity level, volume fraction of the dispersed phase, initial average drop radius, initial standard deviation of droplet radii, or the temperature coefficient of the interfacial tension leads to an increase in the rate of droplet growth due to collision and coalescence. Comparison of the distribution evolutions for unimodal and bimodal initial distributions shows that the latter yield significantly more rapid droplet growth. Finally, it is shown that droplet growth can be dramatically reduced with antiparallel orientation of the gravity vector and the temperature gradient, provided that the relative magnitude of these two vectors is properly chosen.

Davis, R. H.↗

Relative populations of excited levels within the ground configuration of Si-like Cu, Zn, Ge and Se ions

Populations of 3p2 1D2, 3P1, 3P2 levels in Si-like Cu, Zn, Ge, and Se ions have been deduced from the measurements of absolute intensities of magnetic dipole transitions within the 3s2 3p2 ground configuration. The measured population ratios are compared with theoretical calculations based on the distorted-wave approximation for the electron collisions and a semiclassical approximation for the proton collisions. The observed deviation from the statistical distribution for the excited-level populations within the ground configuration along the silicon isoelectronic sequence is in agreement with theoretical prediction.

Datla, R. U.↗

Absolute cascade-free cross-sections for the 2S to 2P transition in Zn(+) using electron-energy-loss and merged-beams methods

Absolute cascade-free excitation cross-sections in an ion have been measured for the resonance 2S to 2P transition in Zn(+) using electron-energy-loss and merged electron-ion beams methods. Measurements were carried out at electron energies of below threshold to 6 times threshold. Comparisons are made with 2-, 5-, and 15-state close-coupling and distorted-wave theories. There is good agreement between experiment and the 15-state close-coupling cross-sections over the energy range of the calculations.

Smith, Steven J.↗

Creep behaviour of Cu-30 percent Zn at intermediate temperatures

The present, intermediate-temperature (573-823 K) range investigation of creep properties for single-phase Cu-30 percent Zn alpha-brass observed inverse, linear, and sigmoidal primary-creep transients above 573 K under stresses that yield minimum creep rates in the 10 to the -7th to 2 x 10 to the -4th range; normal primary creep occurred in all other conditions. In conjunction with a review of the pertinent literature, a detailed analysis of these data suggests that no clearly defined, classes M-to-A-to-M transition exists in this alloy notwithstanding the presence of both classes' characteristics under nominally similar stresses and temperatures.

Raj, S. V.↗

Life testing of secondary Ag-Zn cells

Testing on a variety of secondary silver-zinc (Ag-Zn) cells has continued at MSFC for the past six years. The latest test involves a 350 amp/hr cell design that was cycled for 12 months and has undergone approximately 5400 low-earth-orbit cycles as well as 12 deep discharges. This test is not only a life test of these cells, but it also addresses different methods of storing the cells between deep discharges. Also, impedance measurements are made on one of the packs during periodic deep discharges. It is hoped that this will give a good correlation between the health of a cell and its impedance.

Brewer, Jeffrey C.↗

Characterization of directionally solidified Hg(1-x)Zn(x)Se semiconducting alloys

Hg(1-x)Zn(x)Se alloys with composition between x = 0.08 and 0.115 were synthesized from elemental constituents and were resolidified using a Bridgman-Stockbarger growth technique. By performing precision mass-density measurements on selected wafers cut perpendicular to the growth axis, it was shown that the axial compositional profiles fit a numerical solution to the 1D diffusion equation which takes into account the variation of interface velocity with time. Infrared transmission-edge measurements performed on selected transverse slices from each ingot showed that the relative radial variations in composition decreased with decreasing growth rate. Van der Pauw measurements on selected wafers showed that the 10 exp 18/cu cm electron concentration, typical of as-grown crystals, could be reduced by approximately an order of magnitude by annealing in Se vapor.

Cobb, S. D.↗

Activation energy and capture cross section of majority carrier traps in Zn doped InP

Schottky barrier diodes were fabricated on Zn doped InP Wafers. The diodes were radiation damaged with 2 MeV protons to a dose of 2 x 10(exp 12)cm(sup -2). The damage was analyzed by DLTS (deep level transient spectroscopy) using the double correlation technique. Capture cross sections were measured directly. Two major defects were observed in the DLTS spectra. The first defect, was H4 at Ev + 0.29 eV, with capture cross section 1.1 x 10(exp -17)cm(sup 2). The second defect, was H5 at Ev + 0.53 eV. Its capture cross section varied with temperature as described by the relationship sigma = sigma(sub 0) exp(delta(E)/kT) where sigma(sub 0) = 1.3 x 10(exp -19)cm(sup 2) and delta(E) = .08 eV. This relationship yields a sigma of 5.9 x 10(exp -21)cm(sup 2) at room temperature. The surprisingly small capture cross section of H5 and its temperature dependence are discussed in terms of the multiphonon emission process for carrier capture at the defect. The advantages of the improved experimental techniques used are also discussed.

Rybicki, George↗