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At least 73 records · Page 4
All sourcesNASA NTRSDOE OSTI
NASA NTRS1985

Well-posedness of one-way wave equations and absorbing boundary conditions

A one-way wave equation is a partial differential which, in some approximate sense, behaves like the wave equation in one direction but permits no propagation in the opposite one. The construction of such equations can be reduced to the approximation of the square root of (1-s sup 2) on -1, 1 by a rational function r(s) = p sub m (s)/q sub n(s). Those rational functions r for which the corresponding one-way wave equation is well-posed are characterized both as a partial differential equation and as an absorbing boundary condition for the wave equation. We find that if r(s) interpolates the square root of (1-s sup 2) at sufficiently many points in (-1,1), then well-posedness is assured. It follows that absorbing boundary conditions based on Pade approximation are well-posed if and only if (m, n) lies in one of two distinct diagonals in the Pade table, the two proposed by Engquist and Majda. Analogous results also hold for one-way wave equations derived from Chebyshev or least-squares approximation.

Trefethen, L. N.↗
NASA NTRS1986

Low-noise behavior of InGaAs quantum-well-structured modulation-doped FET's from 10 to the -2nd to 10 to the 8 Hz

Equivalent gate noise voltage spectra of 1-micron gate-length modulation-doped FET's with pseudomorphic InGaAs quantum-well structure have been measured for the frequency range of 0.01 Hz to 100 MHz and commpared with the noise spectra of conventional AlGaAs/GaAs MODFET's and GaAs MESFET's. The prominent generation-recombination (g-r) noise bulge commonly observed in the vicinity of 10 kHz in conventional MODFET's at 300 K does not appear in the case of the new InGaAs quantum-well MODFET. Instead, its noise spectra indicate the presence of low-intensity multiple g-r noise components superimposed on a reduced 1/f noise. The LF noise intensity in the new device appears to be the lowest among those observed in any MODFET or MESFET. The noise spectra at 82 K in the new device represent nearly true 1/f noise. This unusual low-noise behavior of the new structure suggests the effectiveness of electron confinement in the quantum well that significantaly reduces electron trapping in the n-AlGaAs, and thus eliminates the g-r noise bulge observed in conventional MODFET's.

Liu, Shih-Ming J.↗
NASA NTRS1986

Variational calculations of subbands in a quantum well with uniform electric field - Gram-Schmidt orthogonalization approach

Variational calculations of subband eigenstates in an infinite quantum well with an applied electric field using Gram-Schmidt orthogonalized trial wave functions are presented. The results agree very well with the exact numerical solutions even up to 1200 kV/cm. It is also shown that, for increasing electric fields, the energy of the ground state decreases, while that of higher subband states increases slightly up to 1000 kV/cm and then decreases for a well size of 100 A.

Ahn, Doyeol↗
NASA NTRS1988

Intersubband absorption of silicon-based quantum wells for infrared imaging

The 10-micron intersubband absorption in quantum wells made of the silicon-based system, Si/Si(1-x)Ge(x), has been calculated. The necessary details of the effective-mass anisotropy are included in the present analysis. It is found that it is readily possible to achieve an absorption constant of order of 10,000/cm in Si quantum wells with current doping technology. For 110-line and 111-line growth directions, a further advantage of Si quantum wells is pointed out, namely, an allowed absorption at normal incidence due to the anisotropic effective mass in Si.

Yang, Chan-Ion↗
NASA NTRS1988

Properties of multiple quantum wells and their use in high-speed detectors and modulators

Quantum well systems lattice matched to GaAs and InP have emerged as important materials for use in long wavelength optoelectronic devices. Intrinsic problems associated with the growth of these quantum wells by molecular beam epitaxy are discussed and the luminescence properties of state-of-art quantum wells, using novel growth techniques are described. Finally, the properties of detectors, modulators and integrated devices made with these heterojunction materials are described and discussed.

Bhattacharya, Pallab↗
NASA NTRS1989

Intersubband Auger recombination and population inversion in quantum-well subbands

The intersubband-Auger-recombination time of electrons under population-inversion conditions in a single quantum well is calculated by taking into account momentum- and energy-conservation rules, and by employing Fermi-Dirac statistics. The screened matrix element of the electron-electron interaction and the overlap integral are calculated for an infinitely deep quantum well. The results are in a good agreement with published experimental data. As a major nonradiative process, the Auger recombination is related to threshold current of infrared lasers based on intersubband transitions in quantum-well structures. The realization of these devices and other limitations to achieving population inversion are discussed. In view of the results, development of these lasers for emission wavelengths corresponding to energies below the LO-phonon energy seems feasible.

Borenstain, S.↗
NASA NTRS1990

Analysis of energy states in modulation doped multiquantum well heterostructures

A precise and effective numerical procedure to model the band diagram of modulation doped multiquantum well heterostructures is presented. This method is based on a self-consistent iterative solution of the Schroedinger equation and the Poisson equation. It can be used rather easily in any arbitrary modulation-doped structure. In addition to confined energy subbands, the unconfined states can be calculated as well. Examples on realistic device structures are given to demonstrate capabilities of this procedure. The numerical results are in good agreement with experiments. With the aid of this method the transitions involving both the confined and unconfined conduction subbands in a modulation doped AlGaAs/GaAs superlattice, and in a strained layer InGaAs/GaAs superlattice are identified. These results represent the first observation of unconfined transitions in modulation doped multiquantum well structures.

Ji, G.↗
NASA NTRS1990

Photovoltaic quantum well infrared photodetectors

Quantum well infrared photodetectors (QWIP) are a promising new approach to long-wavelength infrared detector arrays. Both single-well photovoltaic and multiple-well photoconductive devices have been demonstrated. The author discusses noise considerations as they apply to photovoltaic devices, grating coupling of the infrared light into QWIPs, and recently demonstrated electrically tunable detectors. The use of light trapping to enhance the quantum efficiency and reduce cross-talk in an array is addressed.

Lyon, Steve A.↗
NASA NTRS1990

Growth and properties of Hg-based quantum well structures and superlattices

An overview of the properties of HgTe-CdTe quantum well structures and superlattices (SL) is presented. These new quantum structures are candidates for use as new long wavelength infrared (LWIR) and very long wavelength infrared (VLWIR) detectors, as well as for other optoelectronic applications. Much has been learned within the past two years about the physics of such structures. The valence band offset has been determined to be approx. 350 meV, independent of temperature. The occurrence of electron and hole mobilities in excess of 10(exp 5)cm(exp 2)/V center dot s is now understood on the basis of SL band structure calculations. The in-plane and out-of-plane electron and hole effective masses have been measured and interpreted theoretically for HgTe-CdTe superlattices. Controlled substitutional doping of superlattices has recently been achieved at North Carolina State University (NCSU), and modulation-doped SLs have now been successfully grown and studied. Most recently, a dramatic lowering of the growth temperature of Hg-based quantum well structure and SLs (to approx. 100 C) has been achieved by means of photoassisted molecular beam epitaxy (MBE) at NCSU. A number of new devices have been fabricated from these doped multilayers.

Schetzina, J. F.↗
NASA NTRS1991

Optically induced excitonic electroabsorption in a periodically delta-doped InGaAs/GaAs multiple quantum well structure

Large optically induced Stark shifts have been observed in a periodically delta-doped InGaAs/GaAs multiple quantum well structure. With an excitation intensity of 10 mW/sq cm, an absolute quantum well absorption change of 7000/cm was measured with a corresponding differential absorption change as high as 80 percent. The associated maximum change in the quantum well refractive index is 0.04. This material is promising for device development for all-optical computing and signal processing.

Larsson, A.↗
NASA NTRS1991

Gallium arsenide quantum well-based far infrared array radiometric imager

We have built an array-based camera (FIRARI) for thermal imaging (lambda = 8 to 12 microns). FIRARI uses a square format 128 by 128 element array of aluminum gallium arsenide quantum well detectors that are indium bump bonded to a high capacity silicon multiplexer. The quantum well detectors offer good responsivity along with high response and noise uniformity, resulting in excellent thermal images without compensation for variation in pixel response. A noise equivalent temperature difference of 0.02 K at a scene temperature of 290 K was achieved with the array operating at 60 K. FIRARI demonstrated that AlGaAS quantum well detector technology can provide large format arrays with performance superior to mercury cadmium telluride at far less cost.

Forrest, Kathrine A.↗
NASA NTRS1991

AlGaAs-GaAs quantum-well lasers for direct solar photopumping

The paper theoretically examines the solar power requirements for low-threshold AlGaAs-GaAs quantum-well lasers directly photopumped by focused sunlight. A model of separate-confinement quantum-well-heterostructure (SCQWH) lasers was developed, which explicitly treats absorption and transport phenomena relevant to solar pumping. The model was used to identify separate-confinement single-quantum-well laser structures which should operate at photoexcitation intensities of less than 10,000 suns.

Unnikrishnan, Sreenath↗
NASA NTRS1993

Interband optical transitions between confined and unconfined states in quantum wells

The interband optical absorption in single quantum wells (SQWs) due to transitions between confined states and unconfined continuum states (C-U transitions) were measured, calculated, and compared to absorption due to transitions involving pairs of confined states (C-C transiitons). An In(0.25)Ga(0.75)As/GaAs SQW with a 61-A well width was used in the experiment. A simple model describes how the slow-turnon absorption line shapes characterisic of SQWs evolve into sharp steplike features as more wells are added.

Ksendzov, A.↗
NASA NTRS1991

Optical and structural characterization of InAs/GaAs quantum wells

Three InAs/GaAs single quantum wells of two-, three-, and four-monolayer thickness were characterized using optical and structural techniques. The results of high-resolution transmission electron (HRTEM) microscopy and optical studies which combine absorption, photoluminescence (PL), photoreflectance, and cathodoluminescence are presented. Using the polarization modulated absorptance technique, we observed two absorption features in our samples at 77 K. On the basis of their polarization properties and comparison with an envelope function calculation, these structures are assigned to transitions between the confined heavy-hole and confined and unconfined electron levels. Photoreflectance spectra of the three-monolayer sample in 77-300 K range show only the fundamental quantum well transition. The temperature dependence of this transition is approximately linear with a slope of 2.2 x 10 exp -4 eV/K, which is significantly lower than in both constituent materials. Comparison to the absorption data reveals that the PL spectra are affected by the carrier diffusion and therefore do not provide direct measure of the exciton density of states. The HRTEM images indicate that, while the interfaces of the two-monolayer sample are smooth and the well thickness is uniform, the four-monolayer sample has uneven interfaces and contains domains of two, three, and four monolayers.

Ksendzov, A.↗
NASA NTRS1994

Design and performance of very long-wavelength GaAs/Al(x)Ga(1-x)As quantum-well infrared photodetectors

We present an extensive and detailed study of very long wavelength quantum well infrared photodetectors covering the spectral region between 14 and 20 micrometers. Measurements were made on seven different molecular beam epitaxy grown samples having different well widths and barrier heights. In this study we combine experimental results with theoretical analysis and focus on the relationship between the quantum well structure and detector performance, i.e., responsivity, dark current, dynamic resistance, noise current, optical-gain, and detectivity. These results provide the basis for further optimization, and the detector parameters needed for the design of the readout circuit for focal plane arrays.

Sarusi, G.↗
NASA NTRS1995

In(x)Ga(1-x)As/GaAs Quantum-Well Infrared Photodetectors

Choice of materials for present quantum-well infrared photodetectors (QWIPs) affected principally by two considerations. One was that in comparison with GaAs, In(x)Ga(1-x)As is potentially superior quantum-well material because of its stronger absorption of infrared radiation. Other consideration was that in comparison with Al(x)Ga(1-x)As, which is usual barrier material in older devices, GaAs potentially superior barrier material because it exhibits superior transport properties (lower scattering and higher mobility of charge carriers). GaAs is well material in older devices and barrier material in present devices.

Gunapala, Sarath D.↗
NASA NTRS1997

Quantum cascade light emitting diodes based on type-2 quantum wells

The authors have demonstrated room-temperature CW operation of type-2 quantum cascade (QC) light emitting diodes at 4.2 (micro)m using InAs/InGaSb/InAlSb type-2 quantum wells. The type-2 QC configuration utilizes sequential multiple photon emissions in a staircase of coupled type-2 quantum wells. The device was grown by molecular beam epitaxy on a p-type GaSb substrate and was compared of 20 periods of active regions separated by digitally graded quantum well injection regions. The maximum average output power is about 250 (micro)W at 80 K, and 140 (micro)W at 300 K at a repetition rate of 1 kHz with a duty cycle of 50%.

Light Emitting Diodes↗
NASA NTRS1994

Design Issues of GaAs and AlGaAs Delta-Doped p-i-n Quantum-Well APD's

We examine the basic design issues in the optimization of GaAs delta-doped and AlGAs delta-doped quantum-well avalanche photodiode (APD) structures using a theoretical analysis based on an ensemble Monte Carlo simulation. The devices are variations of the p-i-n doped quantum-well structure previously described in the literature. They have the same low-noise, high-gain and high-bandwidth features as the p-i-n doped quantum-well device. However, the use of delta doping provides far greater control or the doping concentrations within each stage possibly enhancing the extent to which the device can be depleted. As a result, it is expected that the proposed devices will operate at higher gain levels (at very low noise) than devices previously developed.

Wang, Yang↗