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At least 73 records · Page 4

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DOE OSTI2025

Silicon wafer fracture stress for tracking sensors in particle physics experiments

For the construction of the ATLAS Inner Tracker strip detector, silicon strip sensor modules are glued directly onto carbon fibre support structures using a soft silicone gel. During tests at temperatures below -35°C, several of the sensors were found to crack due to a mismatch in coefficients of thermal expansion between polyimide circuit boards with copper metal layers (glued onto the sensor) and the silicon sensor itself. While module assembly procedures were developed to minimise variations between modules, cold tests showed a wide range of temperatures at which supposedly comparable modules failed. The observed variance (fracture temperatures between -35°C and -70°C) for supposedly comparable modules suggests an undetected variation between modules suspected to be intrinsic to the silicon wafer itself. Therefore, a test programme was developed to investigate the fracture stress of representative sensor wafer cutoffs. This paper presents results for the fracture stress of silicon sensors used in detector modules.

Detector design and construction technologies and ↗

DOE OSTI2026

Uniform Whole Wafer Anisotropic Etching of Structural Ta Thin Films

Tantalum (Ta) has promise as a structural material for micromechanical sensors and actuators. Anisotropic etching of alpha (α) phase Ta is required for micromachining applications. Uniform thickness and etch across a full wafer are desirable features. An experimental investigation is conducted to study plasma etching rate and anisotropy in etching α -Ta in relation to pressure and gas flow ratio. A comparatively low toxicity gas, carbon tetrafluoride (CF4), and argon (Ar) are used. Spectrometry by optical emission spectrometry (OES) and residual gas analysis (RGA) are employed to characterize the plasma to gain insight into the etch mechanisms. At low flow, the etch rate is slow due to an inadequate supply of the etching gas, CF4. The etch rate is also slowed at high flow due to a reduced CF4 residence time. Flow and pressure conditions to achieve a good etch rate and vertical sidewalls are identified and explained by means of a full factorial experiment coupled with emission spectra. Finally, with these conditions, uniform etching of 2.5 μm thick α-Ta across a 4-inch wafer is demonstrated.

36 MATERIALS SCIENCE↗

NASA NTRS1967

Process controls introduction of selected impurities into semiconductor wafers

Modified three-step process controls the concentration of lithium diffused as a dopant into the base region of a diffused n-on-p silicon solar cell wafer. Part of the surface layer of the base region of the p-type silicon containing the diffused dopant is removed, prior to redistributing the remaining portion of the dopant into the bulk of the wafer.

Bartholomay, W. C.↗

NASA NTRS1968

Bonding large area silicon wafers

Diffusion welding of large area silicon wafers without altering electrical properties of semiconductor devices in wafers

Source record↗

NASA NTRS1969

Improved method of dicing integrated circuit wafers into chips

Method employing a pressure chamber is used for dicing semiconductor single-crystal wafers, containing integrated circuits, into small chips along pre-scribed lines. Uniform bending of the scribed wafer over the convex surface of a perforated hemisphere, breaks it cleanly into individual chips without damaging the circuits.

Litant, I.↗

NASA NTRS1975

Bubble-domain circuit wafer evaluation coil set

Coil structures have been designed to permit nondestructive testing of bubble wafers. Wafers can be electrically or optically inspected and operated from quasi-static frequency to maximum device operating frequency.

Chen, T. T.↗

NASA NTRS1978

Apparatus for use in examining the lattice of a semiconductor wafer by X-ray diffraction

An improved apparatus for examining the crystal lattice of a semiconductor wafer utilizing X-ray diffraction techniques was presented. The apparatus is employed in a method which includes the step of recording the image of a wafer supported in a bent configuration conforming to a compound curve, produced through the use of a vacuum chuck provided for an X-ray camera. The entire surface thereof is illuminated simultaneously by a beam of incident X-rays which are projected from a distant point-source and satisfy conditions of the Bragg Law for all points on the surface of the water.

Parker, D. L.↗

NASA NTRS1979

Remote manipulator for IC wafers

Mechanical manipulator automatically loads, transports, and unloads silicon wafers between processing stations in large-scale integrated-circuit fabrication facility at Marshall Space Flight Center thus eliminating need for human opeators at various stages in processing cycle. It also reduces possibility of wafer contamination.

Hudgins, J. L.↗

NASA NTRS1980

Automatic inspection of silicon wafers

Laser machine scans wafers for contaminating particles which cause open circuits, short circuits, and other defects in integrated circuits and transfers good wafers to integrated circuit processing equipment. Machine is faster and more accurate than human operator using lightfield/dark field microscope.

Martin, M.↗

NASA NTRS1979

A gas chromatographic air analyzer fabricated on a silicon wafer

A miniature gas analysis system has been built based on the principles of gas chromatography (GC). The major components are fabricated in silicon using photolithography and chemical etching techniques, which allows size reductions of nearly three orders of magnitude compared to conventional laboratory instruments. The chromatography system consists of a sample injection valve and a 1.5-m-long separating capillary column, which are fabricated on a substrate silicon wafer. The output thermal conductivity detector is separately batch fabricated and integrably mounted on the substrate wafer. The theory of gas chromatography has been used to optimize the performance of the sensor so that separations of gaseous hydrocarbon mixtures are performed in less than 10 s. The system is expected to find application in the areas of portable ambient air quality monitors, implanted biological experiments, and planetary probes.

Terry, S. C.↗

NASA NTRS1982

High-Speed Wafer Slicer

Multiblade cutter slices silicon ingots into solar-cell wafers quickly and with little waste. Speed and blade pressure ensure high wafer-production rate. Lightweight, balanced construction minimizes blade vibration and reduces sideways motion that would otherwise widen kerf and waste silicon.

Schmid, F.↗

NASA NTRS1980

Electrostatic bonding of thin (approximately 3 mil) 7070 cover glass to Ta2O5 AR-coated thin (approximately 2 mil) silicon wafers and solar cells

Electrostatic bonding (ESB) of thin (3 mil) Corning 7070 cover glasses to Ta2O5 AR-coated thin (2 mil) silicon wafers and solar cells is investigated. An experimental program was conducted to establish the effects of variations in pressure, voltage, temperature, time, Ta2O5 thickness, and various prebond glass treatments. Flat wafers without contact grids were used to study the basic effects for bonding to semiconductor surfaces typical of solar cells. Solar cells with three different grid patterns were used to determine additional requirements caused by the raised metallic contacts.

Egelkrout, D. W.↗

NASA NTRS1983

Gettering Silicon Wafers with Phosphorus

Silicon wafers subjected to gettering in phosphorus atmosphere have longer diffusion lengths and higher solar-cell efficiencies than untreated wafers. Gettering treatment improves properties of solar cells manufactured from impure silicon and is compatible with standard solar-cell processing.

Daiello, R. V.↗

NASA NTRS1982

LSA project perspective of wafering technology

The economics and techniques for eliminating wafering as a part of ingot technology in the production of silicon sheets for photovoltaic applications are considered. Technical progress in both ingot and non-ingot technologies for the low cost solar array project is described in the context of process economics. The critical areas of research in wafering are delineated and their payoff potential discussed.

Koliwad, K. M.↗

NASA NTRS1985

Stress rate and proof-testing of silicon wafers

Fracture mechanics test methods were applied to evaluate the proof-test characteristics of single-crystal silicon wafers. The results indicate that the strength distribution of silicon wafers is truncated by proof-testing. No subcritical crack growth occurred during proof-loading, as inferred from the lack of a stress-rate effect on strength. Mechanical proof-testing appears to be an effective method for eliminating weak samples before cell processing.

Chen, C. P.↗

NASA NTRS1987

Wafer level reliability for high-performance VLSI design

As very large scale integration architecture requires higher package density, reliability of these devices has approached a critical level. Previous processing techniques allowed a large window for varying reliability. However, as scaling and higher current densities push reliability to its limit, tighter control and instant feedback becomes critical. Several test structures developed to monitor reliability at the wafer level are described. For example, a test structure was developed to monitor metal integrity in seconds as opposed to weeks or months for conventional testing. Another structure monitors mobile ion contamination at critical steps in the process. Thus the reliability jeopardy can be assessed during fabrication preventing defective devices from ever being placed in the field. Most importantly, the reliability can be assessed on each wafer as opposed to an occasional sample.

Root, Bryan J.↗

NASA NTRS1987

Analysis of the interaction of a laser pulse with a silicon wafer - Determination of bulk lifetime and surface recombination velocity

The decay of excess minority carriers produced in a silicon wafer of thickness d by a laser pulse is analyzed. A comprehensive theory based on this analysis is presented for the determination of bulk lifetime Tau(b) and surface recombination velocity S. It is shown that, starting with an exponential spatial profile, the carrier profile assumes a spatially symmetrical form after approximately one time constant of the fundamental mode of decay. Expressions for the spatial average of the carrier density as a function of time are derived for three temporal laser pulse shapes: impulse, square, and Gaussian. Particular attention is paid to the time constants of the fundamental and higher modes of decay. The ratios of the time constants of the higher modes to the fundamental mode, as well as the time constant of the fundamental mode, are presented over wide ranges of values of S and d. For Sd less than about 40 sq cm/s, a two-wafer method is developed to determine Tau(b) and S; it is also shown that the requirement of d/Tau(b) greater than about 20S is sufficient to adequately guarantee that the asymptotic value of the instantaneous observed lifetime differs from the bulk lifetime by no more than 10 percent.

Luke, Keung L.↗

NASA NTRS1988

A chemical/microwave technique for the measurement of bulk minority carrier lifetime in silicon wafers

A chemical/microwave technique for the measurement of bulk minority carrier lifetime in silicon wafers is described. This method consists of a wet chemical treatment (surface cleaning, oxidation in solution, and measurement in HF solution) to passivate the silicon surfaces, a laser diode array for carrier excitation, and a microwave bridge measuring system which is more sensitive than the microwave systems used previously for lifetime measurement. Representative experimental data are presented to demonstrate this technique. The result reveals that this method is useful for the determination of bulk lifetime of commercial silicon wafers.

Luke, Keung L.↗