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This viewgraph presentation reviews the use of Low Voltage Dropout (LVDO) Voltage Regulators in environments where heavy ion induced Single Event Transients are a concern to the designers.Included in the presentation are results of tests of voltage regulators.
Voltage-hold (V-hold) protocols have shown promise toward calendar lifetime analysis of cells with graphite (Gr) and silicon (Si) anodes. In this work, repeat V-holds are performed on Gr and Si cells paired with lithium iron phosphate cathodes to delineate their beneficial role in formation and conditioning. We find that V-hold at the top of charge supplements constant current cycling in conditioning the cell to higher capacities for both Gr and Si cells after the first V-hold. A reduced order model provides the irreversible capacity proportions of each V-hold. With each repeat V-hold, parasitic loss of lithium to the solid electrolyte interphase (SEI) decreases on both Gr and Si cells. Gr cells show the square-root-of-time capacity loss behavior within 200 h of V-hold, indicative of its fast relaxation and low impact of reference performance test cycles on the SEI growth. Lifetime estimates from repeat V-holds on Gr can reach years. Si exhibits longer transition times from kinetic to diffusion-limited SEI growth, evidenced by the 400 h and 200 h holds showing square-root-of-time and linear behavior, respectively. Lifetime predictions from repeat V-holds on Si only reach 1–2 months, highlighting its limitations. Recommended duration of V-holds for Si cells should be ≥400 h.
The open circuit voltage (V OC) is a critical and common indicator of solar cell performance as well as degradation, for panel down to lab-scale photovoltaics. Detecting V OC at the nanoscale is much more challenging, however, due to experimental limitations on spatial resolution, voltage resolution, and/or measurement times. Accordingly, in this work an approach based on Conductive Atomic Force Microscopy is implemented to directly detect the local V OC , notably for monocrystalline Passivated Emitter Rear Contact (PERC) cells which are the most common industrial-scale solar panel technology in production worldwide. This is demonstrated with cross-sectioned monocrystalline PERC cells around the entire circumference of a poly-Aluminum-Silicide via through the rear emitter. The V OC maps reveal a local Back Surface Field extending ~2 μm into the underlying p-type Si absorber due to Al in-diffusion as designed. Such high spatial resolution methods for photovoltaic performance mapping are especially promising for directly visualizing the effects of processing parameters, as well as identifying signatures of degradation for silicon and other solar cell technologies.
Recent measurements have reported non-Gaussian tails in the distribution of frequency data in electric power grids. Large frequency deviations may induce grid instabilities and it is therefore crucial to understand how noise disturbances with long, non-Gaussian tails propagate. Here, we investigate how fluctuations in power feed-in, characterized by non-zero cumulants of their distribution, propagate through high-voltage power grids. Unlike previous investigations which focused on the white-noise limit, we consider the limit of long noise correlation time, where power feed-in fluctuates over times longer than the inherent dynamical time scales of the grid - the relevant regime for large-scale, high-voltage distribution grids. In this work, we show that in this limit, the skewness and kurtosis of the power feed-in distribution propagate similarly as its variance, independently of the distribution of inertia. Non-Gaussianities from individual sources of noise therefore persist throughout the entire network. This finding is corroborated by numerical results on a realistic model of the synchronous grid of continental Europe.
Every voltage-gated ion channel (VGIC) has a pore domain (PD) made from four subunits, each comprising an antiparallel transmembrane helix pair bridged by a loop. The extent to which PD subunit structure requires quaternary interactions is unclear. In this report we present crystal structures of a set of bacterial voltage-gated sodium channel (BacNa V ) 'pore only' proteins that reveal a surprising collection of non-canonical quaternary arrangements in which the PD tertiary structure is maintained. This context-independent structural robustness, supported by molecular dynamics simulations, indicates that VGIC-PD tertiary structure is independent of quaternary interactions. This fold occurs throughout the VGIC superfamily and in diverse transmembrane and soluble proteins. Strikingly, characterization of PD subunit-binding Fabs indicates that non-canonical quaternary PD conformations can occur in full-length VGICs. Together, our data demonstrate that the VGIC-PD is an autonomously folded unit. This property has implications for VGIC biogenesis, understanding functional states, de novo channel design, and VGIC structural origins.
The main objective of this survey and benchmark study is to identify and document potential high-impact applications in today's and future medium voltage (MV) distribution grids that will significantly benefit from high voltage (HV) (i.e. > 3.3 kV) SiC-based power electronics equipment. In particular, it is desirable to identify applications that can utilize the high switching speed and high control bandwidth enabled by SiC-based equipment. Specifically, the benefits of using SiC are quantified through the benchmark analysis and design using simulation for the selected high-impact applications. In addition, to provide grid support services, it is necessary to consider grid requirements in the grid-connected converter's design. Therefore, the impact of grid requirements on the HV SiC-based grid-connected converter is evaluated.
Medium-voltage (MV) power electronics equipment has been increasingly applied in distribution grids, and high-voltage (HV) silicon carbide (SiC) power semiconductors have attracted considerable attention in recent years. This paper first overviews the development and status of HV SiC power semiconductors. Then, MV power-converter applications in distribution grids are summarized and the benefits of HV SiC in these applications are presented. Microgrids, including conventional and asynchronous microgrids, that can fully demonstrate the benefits of HV SiC power semiconductors are selected to investigate the benefits of HV SiC in detail, including converter-level benefits and system-level benefits. Finally, an asynchronous microgrid power-conditioning system (PCS) prototype using a 10 kV SiC MOSFET is presented.
An end-to-end supervised learning method is developed to classify transmission line faults in a twoyear field-recorded dataset that includes synchronized measurements of three-phase voltages recorded by 38 Phasor Measurement Units (PMU) sparsely located in in the US Western Grid interconnection. Statistical analysis is performed to extract features from this large dataset to train Support Vector Machine (SVM), Random Forest (RF), and eXtreme Gradient Boosting (XGBoost) classifiers initially. The training further leverages a simulated dataset from a synthetic grid with 12 PMUs to increase the number of faults of types infrequently seen in the field-recorded dataset. Training the classification models with the combined dataset resulted in a classification accuracy of 97.7%. This is a significant improvement over 89.7% to 92.5% accuracy obtained by relying on the field-recorded dataset alone.
Transient currents and voltages in breaking electric contacts in low voltage inductive circuits - electrode erosion
Computer program for differential-input voltage- controlled voltage source effects in analysis of distributed lumped active networks
Using neutron irradiated silicon with considerably lower spread in resistivity as compared to conventionally doped silicon it was possible to produce power thyristors with breakdown voltages between 3.5 kV and 5.5 kV. The thyristor pellets have a diameter of 50 mm. Maximum average on-state currents of 600 to 800 A can be reached with these elements. The dynamic properties of the thryistors could be improved to allow standard applications up to maximum repetitive voltages of 4.5 kV.
This paper discusses the numerical modeling of electron flows from the sheath surrounding high positively biased objects in LEO (Low Earth Orbit) to regions of voltage or shape discontinuity on the biased surfaces. The sheath equations are derived from the Two-fluid, Warm Plasma Model. An equipotential corner and a plane containing strips of alternating voltage bias are treated in two dimensions. A self-consistent field solution of the sheath equations is outlined and is pursued through one cycle. The electron density field is determined by numerical solution of Poisson's equation for the electrostatic potential in the sheath using the NASCAP-LEO relation between electrostatic potential and charge density. Electron flows are calculated numerically from the electron continuity equation. Magnetic field effects are not treated.
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The etching of nanometer scale high-aspect-ratio (HAR) features into dielectric materials in low pressure radio frequency excited plasmas is often accompanied by charge accumulation inside the features which can slow etching rates and produce distortions such as twisting. The intra feature charging is at least partially produced by differences in electron and ion energy and angular distributions (EADs). Positive ions, accelerated to high energies having narrow angular spreads by the sheath electric field, can penetrate deeply into HAR features. Electrons typically arrive at the wafer with nearly thermal and isotropic distributions and do not penetrate deeply into HAR features. These disparities lead to differential charging of the inside of the feature, which can lead to reductions in etch rate and feature distortion due to ion deflection. With in-creasing aspect ratio of features, charging challenges are expected to continue for the foreseeable future. In this work, the use of tailored voltage waveforms in geometrically asymmetric capacitively coupled plasmas sustained in Ar/O 2 at 40 mTorr was computationally investigated with the goal of shaping the EAD of electrons incident onto the substrate to address differential charging. The tailored waveform consisted of a sinusoidal wave and its higher harmonics with a fundamental frequency of 1 MHz. Further, we found that electric field reversals in the sheath and presheath can occur during the anodic portion of the cycle. The electric field reversal increases the energy and decreases the angular spread of electrons incident onto the substrate. The magnitude of the electric field reversal can be controlled by the phase angle of the even harmonics and the gas composition. Due to its electronegative nature, increasing mole fractions of O 2 impedes electron transport to the surface which further increases the electric field reversal.
Prebreakdown currents, conditioning rates and ultimate voltage capability of vacuum gaps and solid insulation, analyzing data on large-gap concentric cylinder configuration
We dope CdTe solar cells with Bi after the device structure is completed using a solution process.