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At least 73 records · Page 4

All sources NASA NTRS DOE OSTI

DOE OSTI2021

Band-selective gap opening by a C 4 -symmetric order in a proximity-coupled heterostructure Sr 2 VO 3 FeAs

Significance Heterostructures of correlated electronic systems offer versatile platforms for various types of quantum phases and their transitions. A common wisdom states that the proximity coupling between constituent layers plays a secondary role, because it is much weaker than the intralayer interactions. In this work, we present a counterexample of the belief. Namely, the proximity coupling between localized spins and itinerant electrons stabilizes an exotic electronic state with band-selective gap opening whose observation is done in a correlated heterostructure Sr 2 VO 3 FeAs. Our finding highlights that the proximity coupling can be an effective knob for exotic phases in correlated heterostructures.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2022

Unifying the order and disorder dynamics in photoexcited VO 2

Photoinduced phase transition (PIPT) is always treated as a coherent process, but ultrafast disordering in PIPT is observed in recent experiments. Utilizing the real-time time-dependent density functional theory method, here we track the motion of individual vanadium (V) ions during PIPT in VO 2 and uncover that their coherent or disordered dynamics can be manipulated by tuning the laser fluence. We find that the photoexcited holes generate a force on each V–V dimer to drive their collective coherent motion, in competing with the thermal-induced vibrations. If the laser fluence is so weak that the photoexcited hole density is too low to drive the phase transition alone, the PIPT is a disordered process due to the interference of thermal phonons. Finally, we also reveal that the photoexcited holes populated by the V–V dimerized bonding states will become saturated if the laser fluence is too strong, limiting the timescale of photoinduced phase transition.

36 MATERIALS SCIENCE↗

DOE OSTI2023

Intrinsic and Extrinsic Factors Influencing the Dynamics of VO 2 Mott Oscillators

Oscillatory devices have gained significant interest recently as key components of computing systems based on biomimetic neuronal spiking. An understanding of the time scales underlying the spiking is essential for engineering fast, controllable, low energy devices. However, we find that the intrinsic dynamics of these devices are difficult to properly characterize, as they can be heavily influenced by the external circuitry used to measure them. Here we demonstrate these challenges using a VO 2 Mott oscillator with a sub-100 nm effective size, achieved using a nanogap cut in a metallic carbon nanotube electrode. Given the nanoscale thermal volume of this device, it would be expected to exhibit rapid oscillations. However, due to external parasitics present within commonly used current sources, we see orders of magnitude slower dynamics. Here, we outline methods for determining when measurements are dominated by extrinsic factors and discuss the operating conditions under which intrinsic oscillation frequencies may be observed.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2022

Magnetization reversal driven by electron localization-delocalization crossover in the inverse spinel Co 2 VO 4

Neutron diffraction, magnetization, and muon spin relaxation measurements, supplemented by density functional theory (DFT) calculations are employed to unravel temperature-driven magnetization reversal in inverse spinel Co 2 VO 4 . All measurements show a second-order magnetic phase transition at T C = 168 K to a collinear ferrimagnetic phase. Neutron diffraction measurements reveal two antiparallel ferromagnetic (FM) sublattices, belonging to magnetic ions on two distinct crystal lattice sites, where the relative balance between the two sublattices determine the net FM moment in the unit cell. As the evolution of the ordered moment with temperature differs between the two sublattices, the net magnetic moment reaches a maximum at T NC = 138 K and reverses its sign at T MR = 65 K. The DFT results suggest that the underlying microscopic mechanism for the reversal is a delocalization of the unfilled 3d -shell electrons on one sublattice just below T C , followed by a gradual localization as the temperature is lowered. Furthermore, this delocalized-localized crossover is supported by muon spectroscopy results, as strong T 1 relaxation observed below T C indicates fluctuating internal fields.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2022

Doping-driven resistive collapse of the Mott insulator in a minimal model for VO 2

Here we study the resistive collapse of the Mott insulator state in the dimer Hubbard model. This minimal model has been used to describe the physics of VO 2 , and should be relevant to other strongly correlated materials. It incorporates the physics of correlated dimers and the explicit competition between on-site Coulomb repulsion and magnetic exchange interactions. Our results unveil that between the Mott insulator at half filling and the Fermi liquid metal at high doping there is an intermediate bad metallic phase with exotic features such as a pseudogap, orbital selectivity, and a first-order metal-metal transition. The model is solved within dynamical mean field theory by means of quantum Monte Carlo, which provides the numerically exact solution of the model in the limit of large lattice dimensionality. This model can be considered as a minimal one that captures exotic phenomena associated to the physics of a doped Mott insulator, shading light on their basic physical mechanism.

36 MATERIALS SCIENCE↗

DOE OSTI2021

Universal phase dynamics in VO 2 switches revealed by ultrafast operando diffraction

Understanding the pathways and time scales underlying electrically driven insulator-metal transitions is crucial for uncovering the fundamental limits of device operation. Using stroboscopic electron diffraction, we perform synchronized time-resolved measurements of atomic motions and electronic transport in operating vanadium dioxide (VO 2 ) switches. We discover an electrically triggered, isostructural state that forms transiently on microsecond time scales, which is shown by phase-field simulations to be stabilized by local heterogeneities and interfacial interactions between the equilibrium phases. This metastable phase is similar to that formed under photoexcitation within picoseconds, suggesting a universal transformation pathway. Our results establish electrical excitation as a route for uncovering nonequilibrium and metastable phases in correlated materials, opening avenues for engineering dynamical behavior in nanoelectronics.

36 MATERIALS SCIENCE↗

DOE OSTI2021

Solubility Product of Vanadinite Pb 5 (VO 4 ) 3 Cl at 25 °C—A Comprehensive Approach to Incongruent Dissolution Modeling

Although vanadinite (Pb 5 (VO 4 ) 3 Cl occurs in abundance in various terrestrial geochemical systems of natural and anthropogenic origin and is seriously considered as a potential nuclear waste sequestering agent, its actual application is severely limited by a lack of understanding of its basic thermodynamic parameters. In this regard, the greatest challenge is posed by its incongruent dissolution, which is a pivotal hurdle for effective geochemical modeling. Our paper presents an universal approach for geochemical computing of systems undergoing incongruent dissolution which, along with unique, long-term experiments on vanadinites’ stability, allowed us to determine the mineral solubility constant. The dissolution experiments were carried out at pH = 3.5 for 12 years. Vanadinite has dissolved incongruently, continuously re-precipitating into chervetite (Pb 2 V 2 O 7 ) with the two minerals remaining in mutual equilibrium until termination of the experiments. The empirically derived solubility constant K sp,V,298 = 10 –91.89 ± 0.05 of vanadinite was determined for the first time. The proposed modeling method is versatile and can be adopted to other mineral systems undergoing incongruent dissolution.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

DOE OSTI2020

Materials Data on VO by Materials Project

Computed materials data using density functional theory calculations. These calculations determine the electronic structure of bulk materials by solving approximations to the Schrodinger equation. For more information, see https://materialsproject.org/docs/calculations

36 MATERIALS SCIENCE↗

DOE OSTI2020