Two-dimensional electron systems in high pulsed magnetic fields
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LaTiO{sub 3}/KTaO{sub 3} interfaces: A new two-dimensional electron gas system
We report a new 2D electron gas (2DEG) system at the interface between a Mott insulator, LaTiO{sub 3}, and a band insulator, KTaO{sub 3}. For LaTiO{sub 3}/KTaO{sub 3} interfaces, we observe metallic conduction from 2 K to 300 K. One serious technological limitation of SrTiO{sub 3}-based conducting oxide interfaces for electronics applications is the relatively low carrier mobility (0.5-10 cm{sup 2}/V s) of SrTiO{sub 3} at room temperature. By using KTaO{sub 3}, we achieve mobilities in LaTiO{sub 3}/KTaO{sub 3} interfaces as high as 21 cm{sup 2}/V s at room temperature, over a factor of 3 higher than observed in doped bulk SrTiO{sub 3}. By density functional theory, we attribute the higher mobility in KTaO{sub 3} 2DEGs to the smaller effective mass for electrons in KTaO{sub 3}.
36 MATERIALS SCIENCE↗
Suppression of electron magnetotunneling between parallel two-dimensional GaAs/InAs electron systems by the correlation interaction
Magnetotunneling between two-dimensional GaAs/InAs electron systems in vertical resonant tunneling GaAs/InAs/AlAs heterostructures is studied. A new-type of singularity in the tunneling density of states, specifically a dip at the Fermi level, is found; this feature is drastically different from that observed previously for the case of tunneling between two-dimensional GaAs tunnel systems in terms of both the kind of functional dependence and the energy and temperature parameters. As before, this effect manifests itself in the suppression of resonant tunneling in a narrow range near zero bias voltage in a high magnetic field parallel to the current direction. Magnetic-field and temperature dependences of the effect's parameters are obtained; these dependences are compared with available theoretical and experimental data. The observed effect can be caused by a high degree of disorder in two-dimensional correlated electron systems as a result of the introduction of structurally imperfect strained InAs layers.
36 MATERIALS SCIENCE↗
Quasi-equilibrium phase diagram and optical response in two-dimensional electron-hole system
We study two dimensional electron-hole system in quasi-equilibrium. By using the self-consistent screened T matrix approximation, we present density dependence of ionization ratio. We also discuss the photoluminescence spectra, which are compared with experiment over the wide carrier density range.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Electrical generation and detection of spin waves in a quantum Hall ferromagnet
Spin waves are collective excitations of magnetic systems. An attractive setting for studying long-lived spin-wave physics is the quantum Hall (QH) ferromagnet, which forms spontaneously in clean two-dimensional electron systems at low temperature and in a perpendicular magnetic field. We used out-of-equilibrium occupation of QH edge channels in graphene to excite and detect spin waves in magnetically ordered QH states. Our experiments provide direct evidence for long-distance spin-wave propagation through different ferromagnetic phases in the N = 0 Landau level, as well as across the insulating canted antiferromagnetic phase. Our results will enable experimental investigation of the fundamental magnetic properties of these exotic two-dimensional electron systems.
Science & Technology - Other Topics↗
Robust Quantum Hall Ferromagnetism near a Gate-Tuned ν = 1 Landau Level Crossing
In a low-disorder two-dimensional electron system, when two Landau levels of opposite spin or pseudospin cross at the Fermi level, the dominance of the exchange energy can lead to a ferromagnetic, quantum Hall ground state whose gap is determined by the exchange energy and has skyrmions as its excitations. This is normally achieved via applying either hydrostatic pressure or uniaxial strain. Here, we study here a very high-quality, low-density, two-dimensional hole system, confined to a 30-nm-wide (001) GaAs quantum well, in which the two lowest-energy Landau levels can be gate tuned to cross at and near filling factor v = 1. As we tune the field position of the crossing from one side of v = 1 to the other by changing the hole density, the energy gap for the quantum Hall state at v =1 remains exceptionally large, and only shows a small dip near the crossing. The gap overall follows a $\sqrt{B}$ dependence, expected for the exchange energy. Our data are consistent with a robust quantum Hall ferromagnet as the ground state.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Probing environment fluctuations by two-dimensional electronic spectroscopy of molecular systems at temperatures below 5 K
Two-dimensional (2D) electronic spectroscopy at cryogenic and room temperatures reveals excitation energy relaxation and transport, as well as vibrational dynamics, in molecular systems. These phenomena are related to the spectral densities of nuclear degrees of freedom, which are directly accessible by means of hole burning and fluorescence line narrowing approaches at low temperatures (few K). The 2D spectroscopy, in principle, should reveal more details about the fluctuating environment than the 1D approaches due to peak extension into extra dimension. By studying the spectral line shapes of a dimeric aggregate at low temperature, we demonstrate that 2D spectra have the potential to reveal the fluctuation spectral densities for different electronic states, the interstate correlation of static disorder and, finally, the time scales of spectral diffusion with high resolution.
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
Actuation and transduction of resonant vibrations in GaAs/AlGaAs-based nanoelectromechanical systems containing two-dimensional electron gas
Driven vibrations of a nanoelectromechanical system based on GaAs/AlGaAs heterostructure containing two-dimensional electron gas are experimentally investigated. The system represents a conductive cantilever with the free end surrounded by a side gate. We show that out-of-plane flexural vibrations of the cantilever are driven when alternating signal biased by a dc voltage is applied to the in-plane side gate. We demonstrate that these vibrations can be on-chip linearly transduced into a low-frequency electrical signal using the heterodyne down-mixing method. The obtained data indicate that the dominant physical mechanism of the vibrations actuation is capacitive interaction between the cantilever and the gate.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Electric field controlled spin interference in a system with Rashba spin-orbit coupling
There have been intense research efforts over the last years focused on understanding the Rashba spin-orbit coupling effect from the perspective of possible spintronics applications. An important component of this line of research is aimed at control and manipulation of electron’s spin degrees of freedom in semiconductor quantum dot devices. A promising way to achieve this goal is to make use of the tunable Rashba effect that relies on the spin-orbit interaction in a two-dimensional electron system embedded in a host semiconducting material that lacks inversion-symmetry. This way, the Rashba spin-orbit coupling effect may potentially lead to fabrication of a new generation of spintronic devices where control of spin, thus magnetic properties, is achieved via an electric field and not a magnetic field. In this work we investigate theoretically the electron’s spin interference and accumulation process in a Rashba spin-orbit coupled system consisting of a pair of two-dimensional semiconductor quantum dots connected to each other via two conducting semi-circular channels. The strength of the confinement energy on the quantum dots is tuned by gate potentials that allow “leakage” of electrons from one dot to another. While going through the conducting channels, the electrons are spin-orbit coupled to a microscopically generated electric field applied perpendicular to the two-dimensional system. We show that interference of spin wave functions of electrons travelling through the two channels gives rise to interference/conductance patterns that lead to the observation of the geometric Berry’s phase. Achieving a predictable and measurable observation of Berry’s phase allows one to control the spin dynamics of the electrons. It is demonstrated that this system allows use of a microscopically generated electric field to control Berry’s phase, thus, enables one to tune the spin-dependent interference pattern and spintronic properties with no need for injection of spin-polarized electrons.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Entropy Signatures of Topological Phase Transitions
We review the behavior of the entropy per particle in various two-dimensional electronic systems. The entropy per particle is an important characteristic of any many-body system that tells how the entropy of the ensemble of electrons changes if one adds one more electron. Recently, it has been demonstrated how the entropy per particle of a two-dimensional electron gas can be extracted from the recharging current dynamics in a planar capacitor geometry. These experiments pave the way to the systematic studies of entropy in various crystal systems including novel two-dimensional crystals such as gapped graphene, germanene, and silicene. Theoretically, the entropy per particle is linked to the temperature derivative of the chemical potential of the electron gas by the Maxwell relation. Using this relation, we calculate the entropy per particle in the vicinity of topological transitions in various two-dimensional electronic systems. We show that the entropy experiences quantized steps at the points of Lifshitz transitions in a two-dimensional electron gas with a parabolic energy spectrum. In contrast, in doubled-gapped Dirac materials, the entropy per particle demonstrates characteristic spikes once the chemical potential passes through the band edges. The transition from a topological to trivial insulator phase in germanene is manifested by the disappearance of a strong zero-energy resonance in the entropy per particle dependence on the chemical potential. We conclude that studies of the entropy per particle shed light on multiple otherwise hidden peculiarities of the electronic band structure of novel two-dimensional crystals.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Topology and many-body localization
We discuss the problem of localization in two dimensional electron systems in the quantum Hall (single Landau level) regime. After briefly summarizing the well-studied problem of Anderson localization in the non-interacting case, we concentrate on the problem of disorder induced many-body localization (MBL) in the presence of electron–electron interactions using numerical exact diagonalization and eigenvalue spacing statistics as a function of system size. We provide evidence showing that MBL is not attainable in a single Landau level with short range (white noise) disorder in the thermodynamic limit. We then study the interplay of topology and localization, by contrasting the behavior of topological and nontopological subbands arising from a single Landau level in two models — (i) a pair of extremely flat Hofstadter bands with an optimally chosen periodic potential, and (ii) a Landau level with a split-off nontopological impurity band. Both models provide convincing evidence for the strong effect of topology on the feasibility of many-body localization as well as slow dynamics starting from a nonequilibrium state with charge imbalance.
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
Wigner solid pinning modes tuned by fractional quantum Hall states of a nearby layer
We studied a bilayer system hosting two-dimensional electron systems (2DESs) in close proximity but isolated from one another by a thin barrier. One 2DES has low electron density and forms a Wigner solid (WS) at high magnetic fields. The other has much higher density and, in the same field, exhibits fractional quantum Hall states (FQHSs). The WS spectrum has resonances which are understood as pinning modes, oscillations of the WS within the residual disorder. We found the pinning mode frequencies of the WS are strongly affected by the FQHSs in the nearby layer. Analysis of the spectra indicates that the majority layer screens like a dielectric medium even when its Landau filling is ~ 1 / 2 , at which the layer is essentially a composite fermion (CF) metal. Although the majority layer is only ~ one WS lattice constant away, a WS site only induces an image charge of ~0.1e in the CF metal.
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
Impurity screening and Friedel oscillations in Floquet-driven two-dimensional metals
We develop a theory for the non-equilibrium screening of a charged impurity in a two-dimensional electron system under a strong time-periodic drive. Our analysis of the time-averaged polarization function and dielectric function reveals that Floquet driving modifies the screened impurity potential in two main regimes. In the weak drive regime, the time-averaged screened potential exhibits unconventional Friedel oscillations with multiple spatial periods contributed by a principal period modulated by higher-order periods, which are due to the emergence of additional Kohn anomalies in the polarization function. In the strong drive regime, the time-averaged impurity potential becomes almost unscreened and does not exhibit Friedel oscillations. Furthermore, this tunable Friedel oscillations is a result of the dynamic gating effect of the time-dependent driving field on the two-dimensional electron system.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Layer pseudospin magnetism in a transition metal dichalcogenide double-moiré system
Spontaneous order of layer pseudospins in two-dimensional bilayers is common in quantum Hall systems, where it is responsible for hysteretic responses to gate fields in states with Ising order and giant drag voltages in states with XY (spontaneous interlayer phase coherence) order. In this article we predict that layer pseudospin order will also occur in double-moiré strongly correlated two-dimensional electron systems. Here, we comment on similarities and differences in the competition between the two types of order in quantum Hall and double-moiré systems, and relate our findings to previous work on Falicov-Kimball models of electronic ferroelectrics.
36 MATERIALS SCIENCE↗
Delta-doped SrTiO 3 top-gated field effect transistor
Oxide heterostructures are an enticing platform for incorporation in field-effect transistors (FETs) due to their diverse physical properties which can be tuned by electrostatic gating. Here, we discuss a top-gated FET based on a SrTiO 3 delta-doped structure, which operates down to cryogenic temperatures. The device shows excellent DC characteristics with an on/off ratio greater than 10 4 and field effect mobility estimated to be 2125 cm 2 /V s at 2 K. The high field effect mobility was consistent with the Hall mobility and is attributed to the formation of a two-dimensional electron system in the delta-doped layer: two-dimensional gate-tunable Shubnikov-de Haas oscillations confirm this. The achievement of an electron density of 3 × 10 12 cm –2 in a gate-tunable geometry allows for the exploration of the interplay between magnetic, ferroelectric, and superconducting properties of SrTiO 3 in the quantum limit.
72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
Effects of the electron-electron interaction in the spin resonance in 2D systems with Dresselhaus spin-orbit coupling
The effect of the electron-electron interaction on the spin-resonance frequency in two-dimensional electron systems with Dresselhaus spin-orbit coupling is investigated. The oscillatory dependence of many-body corrections on the magnetic field is demonstrated. It is shown that the consideration of many-body interaction leads to a decrease or an increase in the spin-resonance frequency, depending on the sign of the g factor. It is found that the term cubic in quasimomentum in Dresselhaus spin-orbit coupling partially decreases exchange corrections to the spin resonance energy in a two-dimensional system.
36 MATERIALS SCIENCE↗
Band alignment at epitaxial BaSnO 3 /SrTiO 3 (001) and BaSnO 3 /LaAlO 3 (001) heterojunctions
In this work, we have spectroscopically determined the optical bandgaps and band offsets at epitaxial interfaces of BaSnO 3 with SrTiO 3 (001) and LaAlO 3 (001). 28 u.c. BaSnO 3 epitaxial films exhibit direct and indirect bandgaps of 3.56 ± 0.05 eV and 2.93 ± 0.05 eV, respectively. The lack of a significant Burstein-Moss shift corroborates the highly insulating, defect-free nature of the BaSnO 3 films. The conduction band minimum is lower in electron energy in 5 u.c. films of BaSnO 3 than in SrTiO 3 and LaAlO 3 by 0.4 ± 0.2 eV and 3.7 ± 0.2 eV, respectively. This result bodes well for the realization of oxide-based, high-mobility, two-dimensional electron systems that can operate at ambient temperature, since electrons generated in the SrTiO 3 by modulation doping, or at the BaSnO 3 /LaAlO 3 interface by polarization doping, can be transferred to and at least partially confined in the BaSnO 3 film.
36 MATERIALS SCIENCE↗
Impact of artificial lateral quantum confinement on exciton-spin relaxation in a two-dimensional GaAs electronic system
We demonstrate the effect of artificial lateral quantum confinement on exciton-spin relaxation in a GaAs electronic system. GaAs nanodisks (NDs) were fabricated from a quantum well (QW) by top-down nanotechnology using neutral-beam etching aided by protein-engineered bio-nano-templates. The exciton-spin relaxation time was 1.4 ns due to ND formation, significantly extended compared to 0.44 ns for the original QW, which is attributed to weakening of the hole-state mixing in addition to freezing of the carrier momentum. The temperature dependence of the spin-relaxation time depends on the ND thickness, reflecting the degree of quantum confinement.
36 MATERIALS SCIENCE↗