Single molecule magnet’s (SMM) effects on antiferromagnet-based magnetic tunnel junction
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Babu Ram Sankhi↗
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Magnetic Tunnel Junction-Based On-Chip Microwave Phase and Spectrum Analyzer
A magnetic tunnel junction (MTJ)-based microwave detector is proposed and investigated. When the MTJ is excited by microwave magnetic fields, the relative angle between the free layer and pinned layer alternates, giving rise to an average resistance change. By measuring the average resistance change, the MTJ can be utilized as a microwave power sensor. Due to the nature of ferromagnetic resonance, the frequency of an incident microwave is directly determined. In addition, by integrating a mixer circuit, the MTJ-based microwave detector can also determine the relative phase between two microwave signals. Thus, the MTJbased microwave detector can be used as an on-chip microwave phase and spectrum analyzer.
Fan, Xin↗
Magnetic Tunnel Junction-Based On-Chip Microwave Phase and Spectrum Analyzer
A magnetic tunnel junction (MTJ)-based microwave detector is proposed and investigated. When the MTJ is excited by microwave magnetic fields, the relative angle between the free layer and pinned layer alternates, giving rise to an average resistance change. By measuring the average resistance change, the MTJ can be utilized as a microwave power sensor. Due to the nature of ferromagnetic resonance, the frequency of an incident microwave is directly determined. In addition, by integrating a mixer circuit, the MTJ-based microwave detector can also determine the relative phase between two microwave signals. Thus, the MTJ-based microwave detector can be used as an on-chip microwave phase and spectrum analyzer.
microwave spectra↗
Observation of surface states on gold films by electron tunneling spectroscopy
It is pointed out that inelastic electron tunneling spectroscopy (IETS) is a useful technique for the study of vibrational modes of molecules adsorbed on the surface of the insulating layer in a metal-insulator-metal tunnel junction. A detailed study of electron tunneling in aluminum-aluminum oxide-gold (Al-Al2O3-Au) tunnel junctions has been conducted with an overall goal of exploring possible mechanisms in such a thin film device useful for chemical sensing. For an understanding of the electronic effects in the presence of chemicals in a junction, the electronic surface properties of the metallic films in a clean tunnel junction must be established. The present investigation is concerned with room temperature observations of electronic states on the surface of highly oriented gold film in Al-Al2O3-Au junctions.
Lambe, J.↗
Image-force effects in normal tunneling through junctions exhibiting the Josephson effect.
Image-force effects in normal state tunneling through lead-oxide-lead junctions exhibiting Josephson effect
OXIDE FILM↗
Computer modeling results on all-Si cascade solar cells
The properties of a cascade solar cell made entirely of silicon are investigated numerically with the goal of developing an optimal silicon solar cell grown by molecular-beam epitaxy. The cascade cell is modeled as two standard back-surface field cells with abrupt junctions connected by a tunnel junction. A cascade cell would have approximately twice the open-circuit voltage of a single cell. If the minority carriers generated in the front cell can be reflected before reaching the tunnel junction, then the cascade cell will show an increase in efficiency over a single cell by a percentage point.
Sparks, P. D.↗
Superconducting quantum-interference devices
Published document discusses devices which are based on weak-link Josephson elements that join superconductors. Links can take numerous forms, and circuitry utilizing links can perform many varied functions with unprecedented sensitivity. Theoretical review of Josephson's junctions include tunneling junctions, point contact devices, microbridges, and proximity-effect devices.
Peters, P. N.↗
Performance, defect behavior and carrier enhancement in low energy, proton irradiated p+nn+ InP solar cells
The highest AMO efficiency (19.1 percent) InP solar cell consisted of an n+pp+ structure epitaxially grown on a p+ InP substrate. However, the high cost and relative fragility of InP served as motivation for research efforts directed at heteroepitaxial growth of InP on more viable substrates. The highest AMO efficiency (13.7 percent) for this type of cell was achieved using a GaAs substrate. Considering only cost and fracture toughness, Si would be the preferred substrate. The fact that Si is a donor in InP introduces complexities which are necessary in order to avoid the formation of an efficiency limiting counterdiode. One method used to overcome this problem lies in employing an n+p+ tunnel junction in contact with the cell's p region. A simpler method consists of using an n+ substrate and processing the cell in the p+ nn+ configuration. This eliminates the need for a tunnel junction. Unfortunately, the p/n configuration has received relatively little attention the best cell with this geometry having achieved an efficiency of 17 percent. Irradiation of these homoepitaxial cells, with 1 Mev electrons, showed that they were slightly more radiation resistant than diffused junction n/p cells. Additional p/n InP cells have been processed by some activity aimed at diffusion. Currently, there has been some activity aimed at producing heteroepitaxial p+nn+ InP cells using n+ Ge substrates. Since, like Si, Ge is an n-dopant in InP, use of this configuration obviates the need for a tunnel junction. Obviously, before attempting to process heteroepitaxial cells, one must produce a reasonably good homoepitaxial cell. In the present case we focus our attention on homoepitaxially on an n+ Ge substrate.
Weinberg, I.↗
Tunnel emission cold cathodes
Vacuum chamber characteristics and tungsten, tungsten oxide, gold tunnel junction fabrication for tunnel emission cold cathodes
TUNNEL CATHODE↗
Super Photon Counters
The perfect photon detector would measure the arrival time, the energy, the polarization, and the position of every arriving quantum, but that is easier said than done. Two groups have now succeeded in doing time-resolved spectroscopy on the Crab Nebula pulsar, measuring everything but the polarization, with reports from Romani et al. at Stanford and from Perryman et al. at ESTEC. Both groups use superconducting detectors to gain the necessary speed and sensitivity. The photon can heat the electrons in a superconductor biased in the middle of its resistive transition, or break bound superconducting electron-hole pairs, which can then be collected. Three years ago, Peacock et al. reported that they had detected single optical photons with a superconducting tunnel junction (STJ), and Paresce wrote a News and Views article. A tunnel junction uses two pieces of conductive material, separated by a tiny gap of insulating material or even vacuum. If the gap is thin enough, electrons can tunnel across anyway, and if the conductors are superconductors, the junction displays very useful quantum mechanical properties and electrical nonlinearities. Amplifiers, detectors, oscillators, and computer circuits can all be made from them. Their special advantage is that they operate at very low temperatures, dissipate very little power, operate very fast, and are very small.
Mather, John↗
A review of Air Force high efficiency cascaded multiple bandgap solar cell research and development
At the time of their conception, the cell stack systems to be discussed represent the best semiconductor materials combinations to achieve Air Force program goals. These systems are investigated thoroughly and the most promising systems, from the standpoint of high efficiency, are taken for further development with large area emphasized (at least 4 sq cm). The emphasis in the Air Force cascaded cell program is placed on eventual nonconcentrator application. This use of the final cell design considerably relieves the low resistance requirements for the tunnel junction. In a high concentration application the voltage drop across the tunnel junction can be a very serious problem.
Rahilly, W. P.↗
Semiconductor Lasers Containing Quantum Wells in Junctions
In a recent improvement upon In(x)Ga(1-x)As/InP semiconductor lasers of the bipolar cascade type, quantum wells are added to Esaki tunnel junctions, which are standard parts of such lasers. The energy depths and the geometric locations and thicknesses of the wells are tailored to exploit quantum tunneling such that, as described below, electrical resistances of junctions and concentrations of dopants can be reduced while laser performances can be improved. In(x)Ga(1-x)As/InP bipolar cascade lasers have been investigated as sources of near-infrared radiation (specifically, at wavelengths of about 980 and 1,550 nm) for photonic communication systems. The Esaki tunnel junctions in these lasers have been used to connect adjacent cascade stages and to enable transport of charge carriers between them. Typically, large concentrations of both n (electron-donor) and p (electron-acceptor) dopants have been necessary to impart low electrical resistances to Esaki tunnel junctions. Unfortunately, high doping contributes free-carrier absorption, thereby contributing to optical loss and thereby, further, degrading laser performance. In accordance with the present innovation, quantum wells are incorporated into the Esaki tunnel junctions so that the effective heights of barriers to quantum tunneling are reduced (see figure).
Yang, Rui Q.↗
X-ray spectroscopic instrumentation for the 21st century
Several technologies being developed for high resolution X-ray spectroscopy are compared to determine the most suitable applications for each. Nondispersive cryogenic technology is considered by means of devices such as microcalorimeters and superconducting tunnel-junction detectors, and dispersive technologies are represented by crystal diffractors, transmission gratings and reflection gratings. Calorimeters and superconducting tunnel-junction conductors are found to be suitable for high energies while reflection gratings are more effective at lower energies. In general, however, the selected technology depends primarily on the particular implementation. Parameters such as launch capability, constraints, and scientific drivers are the guiding forces for selecting a particular device.
Kahn, Steven M.↗
Photoinduced currents in metal-barrier-metal junctions
The fabrication and application of metal-barrier-metal tunneling junctions for radiative interactions are discussed. Particular attention is given to the photolithographic fabrication of small area devices and the coupling to such devices via surface plasmon waves which play an important role at infrared and optical frequencies. It has been shown that the junction electron tunneling currents can be strongly coupled to surface plasmon junction modes, and spontaneous and stimulated emission of the latter are possible as well as nonlinear interactions. Finally, results demonstrating the photo-excitation of electrons with subsequent tunneling induced by ultraviolet radiation are presented. It is estimated that quantum efficiencies of the order of 5% and higher are possible in the ultraviolet region.
Guedes, M. P.↗
Results of the Air Force high efficiency cascaded multiple bandgap solar cell programs
The III-V semiconductor materials system that was selected for continued cascade cell development was the AlGaAs cell on GaAs cell structure. The tunnel junction used as transparent ohmic contact between the top cell and the bottom cell continued to be the central difficulty in achieving the program objective of 25 percent AMO efficiency at 25 C. During the tunnel junction and top cell developments it became apparent that the AlGaAs cell has potential for independent development as a single junction converter and is a logical extension of the present GaAs heteroface technology.
Rahilly, W. P.↗
A fixed tuned broadband matching structure for submillimeter SIS receivers
The authors have designed, fabricated, and tested a quasi-optical submillimeter wave receiver with an Nb/AlO(x)/Nb tunnel junction. This design incorporates a hybrid antenna fed by a planar logarithmic spiral structure in order to couple to the radiation field from the telescope. The novel matching circuit requires several layers of photolithographic processing on top of the actual tunneling device. Computer modeling of the device correctly predicted the measured bandwidth and the characteristic frequencies to within 8 percent. A good match has been obtained from 200 to 475 GHz between the antenna and a relatively large area (1 sq mm) tunnel junction with omega(R(n))C about 2-4. Noise measurements at 318 GHz, 395 GHz, 426 GHz, and 492 GHz yielded uncorrected double sideband receiver noise temperatures of 200 K, 230 K, 220 K, and 500 K, respectively. Using the same optics, coupling efficiencies between the receiver and the Caltech Submillimeter Telescope were found to have values approaching those achieved by the best waveguide-horn-based receiver systems.
Buttgenbach, Thomas H.↗
A fixed tuned broadband matching structure for submillimeter SIS receivers
We have designed, fabricated, and tested a quasi-optical spiral antenna mixer with a Nb/AlO(x)/Nb tunnel junction. This design incorporates a hybrid antenna fed by a planar logarithmic spiral antenna to couple to the radiation field, as previously done with Pb based devices, as well as a newly designed matching circuit. This matching circuit is a relatively complex structure requiring several layers of photolithographic processing on top of the actual tunneling device. Computer modeling of the device predicted the measured bandwidth to within 8 percent, making scale model measurements unnecessary. We have obtained a good match from 210 GHz to 460 GHz between the antenna and a relatively large area (1.25 by 1.25 sq microns) tunnel junction with omega R(sub N) C approx. = 2 - 4.4. This compares to simple inductive stubs that attain only a few percent of total bandwidth in the submillimeter band or inductively tuned SIS arrays with an upper limit of operating frequencies well below the submillimeter band. Noise temperatures were measured at 345 GHz, 426 GHz, and 492 GHz yielding double sideband noise temperatures at 200 K, 220 K, and 500 K, respectively.
Buettgenbach, Thomas H.↗
Micromachined Millimeter- and Submillimeter-Wave SIS Heterodyne Receivers for Remote Sensing
A heterodyne mixer with a micromachined horn antenna and a superconductor -insulator-superconductor (SIS) tunnel junction as mixing element is tested in the W-band (75-115 GHz) frequency range. Micromachined integrated horn antennas consist of a dipole antenna suspended on a thin Si3N4 dielectric membrane inside a pyramidal cavity etched in silicon. The mixer performance is optimized by using a backing plane behind the dipole antenna to tune out the capacitance of the tunnel junction. The lowest receiver noise temperature of 30+/-3 K without any correction) is measured at 106 GHz with a 3-dB bandwidth of 8 GHz. This sensitivity is comparable to the state-of-the-art waveguide and quasi-optical SIS receivers, showing the potential use of micromachined horn antennas in imaging arrays.
Hu, Qing↗