Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “Topological Materials”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 73 records · Page 4
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Large Exchange Coupling Between Localized Spins and Topological Bands in MnBi 2 Te 4

Magnetism in topological materials creates phases exhibiting quantized transport phenomena with potential technological applications. The emergence of such phases relies on strong interaction between localized spins and the topological bands, and the consequent formation of an exchange gap. However, this remains experimentally unquantified in intrinsic magnetic topological materials. Here, this interaction is quantified in MnBi 2 Te 4 , a topological insulator with intrinsic antiferromagnetism. This is achieved by optically exciting Bi-Te p states comprising the bulk topological bands and interrogating the consequent Mn 3d spin dynamics, using a multimodal ultrafast approach. Ultrafast electron scattering and magneto-optic measurements show that the p states demagnetize via electron-phonon scattering at picosecond timescales. Despite being energetically decoupled from the optical excitation, the Mn 3d spins, probed by resonant X-ray scattering, are observed to disorder concurrently with the p spins. Together with atomistic simulations, this reveals that the exchange coupling between localized spins and the topological bands is at least 100 times larger than the superexchange interaction, implying an optimal exchange gap of at least 25 meV in the surface states. Here, by quantifying this exchange coupling, this study validates the materials-by-design strategy of utilizing localized magnetic order to manipulate topological phases, spanning static to ultrafast timescales.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Haldane topological spin-1 chains in a planar metal-organic framework

Haldane topological materials contain unique antiferromagnetic chains with symmetry-protected energy gaps. Such materials have potential applications in spintronics and future quantum computers. Haldane topological solids typically consist of spin-1 chains embedded in extended three-dimensional (3D) crystal structures. Here, we demonstrate that [Ni(μ-4,4'-bipyridine)(μ-oxalate)] n (NiBO) instead adopts a two-dimensional (2D) metal-organic framework (MOF) structure of Ni 2+ spin-1 chains weakly linked by 4,4'-bipyridine. NiBO exhibits Haldane topological properties with a gap between the singlet ground state and the triplet excited state. The latter is split by weak axial and rhombic anisotropies. Several experimental probes, including single-crystal X-ray diffraction, variable-temperature powder neutron diffraction (VT-PND), VT inelastic neutron scattering (VT-INS), DC susceptibility and specific heat measurements, high-field electron spin resonance, and unbiased quantum Monte Carlo simulations, provide a detailed, comprehensive characterization of NiBO. Vibrational (also known as phonon) properties of NiBO have been probed by INS and density-functional theory (DFT) calculations, indicating the absence of phonons near magnetic excitations in NiBO, suppressing spin-phonon coupling. The work here demonstrates that NiBO is indeed a rare 2D-MOF Haldane topological material.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Topological orders of monopoles and hedgehogs: From electronic and magnetic spin-orbit coupling to quarks

Topological states of matter are, generally, quantum liquids of conserved topological defects. We establish this by constructing and analyzing topological field theories which introduce gauge fields to describe the dynamics of singularities in the original field configurations. In this work, homotopy groups are utilized to identify topologically protected singularities, and the conservation of their protected number is captured by a topological action term that unambiguously obtains from the given set of symmetries. Stable phases of these theories include quantum liquids with emergent massless Abelian and non-Abelian gauge fields, as well as topological orders with long-range quantum entanglement, fractional excitations, boundary modes, and unconventional responses to external perturbations. This paper focuses on the derivation of topological field theories and basic phenomenological characterization of topological orders associated with homotopy groups π n (S n ), n ≥ 1 . These homotopies govern monopole and hedgehog topological defects in d = n + 1 dimensions, and enable the generalization of both weakly interacting and fractional quantum Hall liquids of vortices to d > 2 . Hedgehogs have not been in the spotlight so far, but they are particularly important defects of magnetic moments because they can be stimulated in realistic systems with spin-orbit coupling, such as chiral magnets and d = 3 topological materials. We predict topological orders in systems with U(1) × Spin(d) symmetry in which fractional electric charge attaches to hedgehogs. Monopoles, the analogous defects of charge or generic U(1) currents, may bind to hedgehogs via Zeeman effect, or effectively emerge in purely magnetic systems. The latter can lead to spin liquids with different topological orders than that of the resonant valence bond spin liquid. Charge fractionalization of quarks in atomic nuclei is also seen as possibly arising from the charge-hedgehog attachment.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Quantum anomalous Hall effect in two-dimensional magnetic insulator heterojunctions

Abstract Recent years have witnessed tremendous success in the discovery of topological states of matter. Particularly, sophisticated theoretical methods in time-reversal-invariant topological phases have been developed, leading to the comprehensive search of crystal database and the prediction of thousands of topological materials. In contrast, the discovery of magnetic topological phases that break time reversal is still limited to several exemplary materials because the coexistence of magnetism and topological electronic band structure is rare in a single compound. To overcome this challenge, we propose an alternative approach to realize the quantum anomalous Hall (QAH) effect, a typical example of magnetic topological phase, via engineering two-dimensional (2D) magnetic van der Waals heterojunctions. Instead of a single magnetic topological material, we search for the combinations of two 2D (typically trivial) magnetic insulator compounds with specific band alignment so that they can together form a type-III broken-gap heterojunction with topologically non-trivial band structure. By combining the data-driven materials search, first-principles calculations, and the symmetry-based analytical models, we identify eight type-III broken-gap heterojunctions consisting of 2D ferromagnetic insulators in the MXY compound family as a set of candidates for the QAH effect. In particular, we directly calculate the topological invariant (Chern number) and chiral edge states in the MnNF/MnNCl heterojunction with ferromagnetic stacking. This work illustrates how data-driven material science can be combined with symmetry-based physical principles to guide the search for heterojunction-based quantum materials hosting the QAH effect and other exotic quantum states in general.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Unconventional Hall effect induced by Berry curvature

Berry phase and Berry curvature play a key role in the development of topology in physics and do contribute to the transport properties in solid state systems. In this paper, we report the finding of novel nonzero Hall effect in topological material ZrTe 5 flakes when the in-plane magnetic field is parallel and perpendicular to the current. Surprisingly, both symmetric and antisymmetric components with respect to magnetic field are detected in the in-plane Hall resistivity. Further theoretical analysis suggests that the magnetotransport properties originate from the anomalous velocity induced by Berry curvature in a tilted Weyl semimetal. Our work not only enriches the Hall family but also provides new insights into the Berry phase effect in topological materials.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Canted antiferromagnetic phases in the candidate layered Weyl material EuMnSb 2

EuMnSb 2 is a candidate topological material which can be tuned towards a Weyl semimetal, but there are differing reports for its antiferromagnetic (AFM) phases. The coupling of bands dominated by pure Sb layers hosting topological fermions to Mn and Eu magnetic states provides a potential path to tune the topological properties. In this study we present single-crystal neutron diffraction, magnetization, and heat-capacity data as well as polycrystalline 151 Eu Mössbauer data which show that three AFM phases exist as a function of temperature, and we present a detailed analysis of the magnetic structure in each phase. The Mn magnetic sublattice orders into a C-type AFM structure below T N Mn = 323 (1) K with the ordered Mn magnetic moment μ Mn lying perpendicular to the layers. AFM ordering of the Eu sublattice occurs below T N Eu1 = 23 (1) K with the ordered Eu magnetic moment μ Eu canted away from the layer normal and μ Mn retaining its higher temperature order. μ Eu is ferromagnetically aligned within each Eu layer but exhibits a complicated AFM layer stacking. Both of these higher-temperature phases are described by magnetic space group (MSG) $\mathcal{Pn'm'a'}$ with the chemical and magnetic unit cells having the same dimensions. Cooling below T N Eu2 =9 (1) K reveals a third AFM phase where μ Mn remains unchanged but μ Eu develops an additional substantial in-plane canting. This phase has MSG $\mathcal{P11}$ $\frac{2_1}{a′}$. We also find some evidence of short-range magnetic correlations associated with the Eu between 12 K≲ T≲ 30 K . Using the determined magnetic structures, we postulate the signs of nearest-neighbor intralayer and interlayer exchange constants and the magnetic anisotropy within a general Heisenberg model. We then discuss implications of the various AFM states in EuMnSb 2 and their potential for tuning topological properties.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Singular Hall Response from a Correlated Ferromagnetic Flat Nodal‐Line Semimetal

Abstract Topological quantum phases are largely understood in weakly correlated systems, which have identified various quantum phenomena, such as the spin Hall effect, protected transport of helical fermions, and topological superconductivity. Robust ferromagnetic order in correlated topological materials particularly attracts attention, as it can provide a versatile platform for novel quantum devices. Here, a singular Hall response arising from a unique band structure of flat topological nodal lines in combination with electron correlation in a van der Waals ferromagnetic semimetal, Fe 3 GaTe 2 , with a high Curie temperature ofT c = 347 K is reported. High anomalous Hall conductivity violating the conventional scaling, resistivity upturn at low temperature, and a large Sommerfeld coefficient are observed in Fe 3 GaTe 2 , which implies heavy fermion features in this ferromagnetic topological material. The scanning tunneling microscopy, circular dichroism in angle‐resolved photoemission spectroscopy, and theoretical calculations support the original electronic features of the material. Thus, low‐dimensional Fe 3 GaTe 2 with electronic correlation, topology, and room‐temperature ferromagnetic order appears to be a promising candidate for robust quantum devices.

Chemistry↗
DOE OSTI2025

Direct observation of distinct bulk and edge nonequilibrium spin accumulation in ultrathin MoTe 2

Low-symmetry two-dimensional (2D) topological materials such as MoTe 2 host efficient charge-to-spin conversion (CSC) mechanisms that can be harnessed for novel electronic and spintronic devices. However, the nature of the various CSC mechanisms and their correlation with underlying crystal symmetries remain unsettled. In this work, we use local spin-sensitive electrochemical potential measurements to directly probe the spatially dependent nonequilibrium spin accumulation in MoTe 2 flakes down to four atomic layers. We are able to clearly disentangle contributions originating from the spin Hall and Rashba-Edelstein effects and uncover an abundance of unconventional spin polarizations that develop uniquely in the sample bulk and edges with decreasing thickness. Using ab-initio calculations, we construct a unified understanding of all the observed CSC components in relation to the material dimensionality and stacking arrangement. Our findings not only illuminate previous CSC results on MoTe 2 but also have important ramifications for future devices that can exploit the local and layer-dependent spin properties of this 2D topological material.

Science & Technology - Other Topics↗
DOE OSTI2020

Giant room temperature anomalous Hall effect and tunable topology in a ferromagnetic topological semimetal Co 2 MnAl

Weyl semimetals exhibit unusual surface states and anomalous transport phenomena. It is hard to manipulate the band structure topology of specific Weyl materials. Topological transport phenomena usually appear at very low temperatures, which sets challenges for applications. In this work, we demonstrate the band topology modification via a weak magnetic field in a ferromagnetic Weyl semimetal candidate, Co 2 MnAl, at room temperature. We observe a tunable, giant anomalous Hall effect (AHE) induced by the transition involving Weyl points and nodal rings. The AHE conductivity is as large as that of a 3D quantum AHE, with the Hall angle (Θ H ) reaching a record value (tan Θ H = 0.21) at the room temperature among magnetic conductors. Furthermore, we propose a material recipe to generate large AHE by gaping nodal rings without requiring Weyl points. Our work reveals an intrinsically magnetic platform to explore the interplay between magnetic dynamics and topological physics for developing spintronic devices.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Topological damping materials and methods thereof

The present invention features a metamaterial including a plurality of unit cells, in which each unit cell includes two interacting members to dissipate energy. Also provided herein are assemblies including such metamaterials and methods of manufacture.

Boyce, Brad↗
DOE OSTI2025

Large negative magnetoresistance in the off-stoichiometric topological semimetal PrSb x Te 2- x

Magnetic topological materials LnSbTe (Ln = lanthanide) have attracted intensive attention because of the presence of interplay between magnetism, topological, and electron correlations depending on the choices of magnetic Ln elements. Varying Sb and Te composition is an efficient approach to control structural, magnetic, and electronic properties. Here we report the composition-dependent properties in PrSb x Te 2-x . We identified the tetragonal-to-orthorhombic structure transitions in this material system, and very large negative magnetoresistance in the x = 0.3 composition, which might be ascribed to the coupling between magnetism and transport. Such unusual magnetotransport enables PrSb x Te 2-x topological materials as a promising platform for device applications.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Detecting topological phase transitions in cadmium arsenide films via the transverse magnetoresistance

Topological protection against localization causes electrical transport phenomena in disordered topological materials to differ from those in topologically trivial systems. For example, a transition between a regime of weak localization to one of weak antilocalization can occur in systems such as topological insulators and topological semimetals when an external potential is applied across the system. Here, we report on the transverse magnetoresistance of thin films of cadmium arsenide, a topological non-trivial material, as we tune the electronic states and the Fermi level. We show that the appearance of weak localization and weak antilocalization sensitively reflects the relative contributions of multiple transport channels involving both gapless (massless) and gapped (massive) Dirac fermion states present in these films. Furthermore, the data is consistent with expectations of the different topological states of these films. Weak (anti-) localization phenomena can therefore serve as a probe of the types of Dirac fermions present in topological semimetals.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

Are quantum materials economically and environmentally sustainable?

Quantum materials have revolutionized energy, information, and healthcare technologies, yet their development has largely prioritized performance over economic and environmental impacts—key factors for industrial adoption. Using topological materials as a case study, we present a data-driven framework that evaluates over 16,000 materials based on cost, supply chain resilience, energy demand, toxicity, and environmental footprint. By integrating the recently proposed quantum weight – a metric quantifying quantum behavior – we reveal a striking trend: materials with stronger quantum effects often exhibit higher environmental impact, posing challenges for scalability and industrial adoption. To address this, we identify a small set of materials that achieve a balance between quantum functionality and sustainability. Furthermore, our approach enables high-throughput, AI-driven materials discovery that incorporates economic and environmental influences from the outset, guiding the development of quantum materials for next-generation microelectronics and energy harvesting technologies.

AI↗
DOE OSTI2021

Crystalline materials for quantum computing: Semiconductor heterostructures and topological insulators exemplars

Abstract High-purity crystalline solid-state materials play an essential role in various technologies for quantum information processing, from qubits based on spins to topological states. New and improved crystalline materials emerge each year and continue to drive new results in experimental quantum science. This article summarizes the opportunities for a selected class of crystalline materials for qubit technologies based on spins and topological states and the challenges associated with their fabrication. We start by describing semiconductor heterostructures for spin qubits in gate-defined quantum dots and benchmark GaAs, Si, and Ge, the three platforms that demonstrated two-qubit logic. We then examine novel topologically nontrivial materials and structures that might be incorporated into superconducting devices to create topological qubits. We review topological insulator thin films and move onto topological crystalline materials, such as PbSnTe, and its integration with Josephson junctions. We discuss advances in novel and specialized fabrication and characterization techniques to enable these. We conclude by identifying the most promising directions where advances in these material systems will enable progress in qubit technology.

Scappucci, G. (ORCID:0000000325120079)↗
DOE OSTI2022

Topological resonance in graphene-like materials

Abstract In topological materials, interacting with short and strong optical pulses, electrons can accumulate a topological phase during the pulse. Such phase can compensate the dynamic phase resulting in topological resonance, which is visible as a large inter-band transfer of electron population. We study theoretically the topological resonance in materials of the gapped multilayer graphene type. We show that the resonance can be observed only in the systems with finite bandgap. For graphene monolayer the topological resonance can occur only in the field of an elliptically polarized pulse, while for graphene systems with many layers the topological resonance can be also realized in a linearly polarized pulse.

Physics↗
DOE OSTI2025

Non-equilibrium states and interactions in the topological insulator and topological crystalline insulator phases of NaCd4As3

Topological materials are of great interest because they can support metallic edge or surface states that are robust against perturbations, with the potential for technological applications. Here, we experimentally explore the light-induced non-equilibrium properties of two distinct topological phases in NaCd4As3: a topological crystalline insulator (TCI) phase and a topological insulator (TI) phase. This material has surface states that are protected by mirror symmetry in the TCI phase at room temperature, while it undergoes a structural phase transition to a TI phase below 200 K. After exciting the TI phase by an ultrafast laser pulse, we observe a leading band edge shift of >150 meV that slowly builds up and reaches a maximum after ∼0.6 ps and that persists for ∼8 ps. The slow rise time of the excited electron population and electron temperature suggests that the electronic and structural orders are strongly coupled in this TI phase. It also suggests that the directly excited electronic states and the probed electronic states are weakly coupled. Both couplings are likely due to a partial relaxation of the lattice distortion, which is known to be associated with the TI phase. In contrast, no distinct excited state is observed in the TCI phase immediately or after photoexcitation, which we attribute to the low density of states and phase space available near the Fermi level. Our results show how ultrafast laser excitation can reveal the distinct excited states and interactions in phase-rich topological materials.

Angle-resolved photoemission spectroscopy↗