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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 73 records · Page 4
All sourcesNASA NTRSDOE OSTI
NASA NTRS1998

Lifetime Modeling of Tin Electrodes for AMTEC Cells

In order to model the lifetime of the electrochemical cell in an Alkali Metal Thermal to Electric Converter (AMTEC), studies of TiN Electrodes on Beta-alumina solid electrolytes (BASE) have been made to determine the performace parameters over time. The first of a series of experiments in which TiN electrodes are studied in a Vapor Exposure Test Cell is described here, with preliminary results from electrochemical measurements made on the cell. The TiN electrodes tested here perform well, with minimal degradation over 1000 hours of operation at 850 degree C.

Electrochemical↗
DOE OSTI2024

X-ray induced synthesis of beta tin (β-Sn)

The destabilization of molecular structures via hard X-rays has been previously utilized to synthesize novel compounds. Here, in this study, we report that the monochromatic X-ray induced decomposition of tin(II) oxalate (SnC 2 O 4 ) at ambient and 0.6 GPa pressures lead to the formation of beta tin (β-Sn). At 1 GPa, only the degradation of SnC 2 O 4 crystal structure is observed without any indication of β-Sn at the end of irradiation. The maximum transformation yield is achieved at 0.6 GPa suggesting the critical role of intermolecular distance in X-ray induced synthesis of β-Sn. Moreover, a modified Avrami equation is utilized to describe the kinetics and geometry of structural synthesis at ambient and 0.6 GPa. The obtained results demonstrate that X-ray irradiation can induce photochemical synthetic pathways different from conventional methods (e.g., high pressure, temperature, stoichiometric mixing) and that high pressure (HP) can be considered a tool to control X-ray induced photochemistry.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2025

A surprising proliferation of detwinning in β -tin at extreme loading rates

Integrating data from dynamic compression experiments of condensed matter across three national laboratories has led to insight and quantitative calibration of materials strength over decades of loading rate. For many materials, a single strength model (such as PTW) is sufficient to capture the flow-stress strain rate relationship which is monotonic. Here, we show here that β -tin, a tetragonal metal, exhibits dramatic deviations from this behavior. Naive fitting to a single PTW model is insufficient to capture the behavior; indeed, such resulting inferred flow stress versus strain exhibits a non-monotonic behavior. We suggest a resolution to this by proposing that in β -tin there are important Bauschinger effects arising from favorable conditions for twinning and detwinning. A simple yield surface model when paired with PTW hardening captures the experimental data.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Air-Stable Room-Temperature Quasi-2D Tin Iodide Perovskite Microlasers

Quasi-2D tin iodide perovskites (TIPs) are promising lead-free alternatives for optoelectronic applications, but achieving stable lasing remains challenging due to their limited environmental stability. Here, we report air-stable, room-temperature lasing from quasi-2D TIP microcrystals as small as 4 μm. Incorporation of the organic spacer 5IPA3 significantly enhanced the stability of these materials compared with previously reported TIPs. Lasing was observed from both dielectric (n = 4) and plasmonic (n = 3 and n = 4) TIP microlasers. Under picosecond pumping, lasing was sustained for over 108 pump pulses in ambient conditions. These results represent a significant step toward practical photonic applications of tin-based perovskites.

crystals↗
DOE OSTI2025

High-resolution characterization of ceramic-metal interface of TiN coating on ferritic-steels for nuclear application

Advanced fuel cladding is critical for fast reactors, offering sufficient thermal conductivity, mechanical and dimensional stability and radiation tolerance of the cladding base material. Additionally, it must provide corrosion resistance and high temperature coolant compatibility on the cladding outer surface, as well as chemical stability on the cladding inner wall against fuel cladding chemical interaction (FCCI). TiN ceramic coating has been considered an effective diffusion barrier for inner and outer cladding-walls for enhanced performance. The TiN-metal interface microstructure and chemistry play a critical role in coating bond strength and integrity under harsh conditions. High-resolution transmission electron microscopy characterization of ceramic-metal interface at atomic resolution in unirradiated, irradiated and thermal cycled conditions were performed. The interface remained intact after irradiation up to 200 dpa or thermal cycling five times up to 550 °C. In conclusion, this work discusses the potential impact of these results on coating performance and design for advanced claddings.

36 - MATERIALS SCIENCE↗
DOE OSTI2024

Effect of TiN coating on suppressing Ce-Fe interaction under irradiation

Advanced cladding is critical for fast reactors with the adequate thermal conductivity, mechanical stability and radiation tolerance of the cladding base material, corrosion resistance and high temperature coolant compatibility of the cladding surface, and chemical stability of the cladding inner wall against fuel cladding chemical interaction (FCCI). The preliminary results of recent ion irradiation studies of two diffusion-couple samples of cerium (Ce)/oxide-dispersion strengthened steel (ODS) and Ce/TiN/ODS, irradiated with 80 MeV xenon (Xe) ions to 100 displacements per atom (dpa) at 500°C, are summarized. Significant Ce-Fe interaction occurred in the Ce/ODS sample, and no noticeable Ce-Fe interaction was found in the Ce/TiN/ODS sample. It shows the effectiveness of 1-µm TiN diffusion barrier coated by the pulsed laser deposition on suppressing Ce-Fe interaction, a major contributor to FCCI in cladding. Here, density function theory (DFT) calculations of the impurity diffusivities of Ce and Fe within the Ti sublattice of TiN were performed to assist a mechanistic understanding of the experimental results.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
DOE OSTI2025

Boosting Tin Perovskite Solar Cell Performance via Light-Induced Interface Doping

Continuous breakthroughs have been achieved in the photoelectric conversion efficiency (PCE) of tin-based perovskite solar cells (TPSCs) in recent years. Inspired by performance improvements observed during device storage, we identified beneficial light-induced interface doping (LIID) in the TPSCs. In situ analyses using X-ray photoelectron spectroscopy and ultraviolet photoelectron spectroscopy reveal that ion migration and oxidation at the interface induce beneficial doping effects, enhancing carrier transport and significantly boosting device performance. By implementing specific illumination techniques or maximum power point tracking (MPPT) methods to achieve LIID, we increased the open-circuit voltage while maintaining a high short-circuit current, reaching a PCE of up to 14.91%. Furthermore, this efficiency was sustained at 70% of its maximum value after nearly 900 h of continuous operation. Our study introduces a novel approach to addressing energy band mismatch, paving the way for improved efficiency in tin-based perovskite solar cells.

Sun, Mulin↗
DOE OSTI2025

P-Type Doping of Mixed Tin–Lead Halide Perovskites Using Electron Transfer to Mo(tfd-COCF3) 3 and F 4 TCNQ

Mixed tin-lead halide perovskites are emerging as promising candidates to address the toxicity issues of lead-based perovskites and to provide additional bandgap tunability for optoelectronic applications. Electron-transfer doping offers a prospective pathway to modulate electronic properties of metal-halide perovskites, while not disturbing the underlying crystal structure. However, limited research exists comparing molecular dopants for these systems. Here, our study investigates the p-type electron-transfer doping of the mixed tin-lead halide perovskite MAPb 0.5 Sn 0.5 I 3 (MA = methylammonium) using a sequential deposition approach (perovskite film followed by dopant incorporation) and the molecular dopants F 4 TCNQ and Mo(tfd-COCF 3 ) 3 . Up to 3 orders of magnitude higher carrier density and up to 2 orders of magnitude greater conductivity are achieved relative to the undoped samples, with F 4 TCNQ and Mo(tfd-COCF 3 ) 3 demonstrating similar doping efficiencies (associated with the ratio of mobile charges added to the number of dopant molecules incorporated) of 0.031(3) % and 0.024(3) %, respectively. Differences in the doping effectiveness for a given molarity doping solution likely follow from variations in dopant incorporation within the film during the spin coating deposition step.

14 SOLAR ENERGY↗
DOE OSTI2024

Unraveling the Formation Mechanisms of Highly Oriented Tin Perovskite with a 3D-over-2D Heterostructure

Tin-based perovskites (TinPVKs) have become the most promising candidates for lead-free perovskite solar cells, owing to its low toxicity and improved photovoltaic performance. However, due to the absence of 4f shell, TinPVKs suffer from uncontrolled crystallization, limiting the power conversion efficiency (PCE) of tin perovskite solar cells (TinPSCs). Here, we systematically study the ligand regulated crystallization process of TinPVK. We find that with elongated spin time, TinPVK crystals undergo reorientation and lateral growth. 3D α-phase FASnI3 and 2D (n = 2) and 2D (n = 1) phases emerge sequentially to form a “3D-over-2D” heterostructure via a proposed “diffusion-propagation” mechanism. TinPSCs exhibit improved open circuit voltage (V OC ) due to favorable energy level alignment of the 3D-over-2D heterostructure, with a champion PCE value of 13.07% and T 80 value of over 1200 h. Furthermore, this work provides mechanistic insights on controlled crystallization and heterostructure formation of TinPVKs, paving the way toward high-efficiency TinPSCs.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2025

Precision Mass Measurements Reveal Low Neutron Pairing in Tin beyond 𝑁=82 and Its Impact on Stellar Nucleosynthesis

We present a study on neutron-rich tin (𝑍 =50) isotopes beyond the doubly closed shell of 𝑁 = 82 through high-precision mass measurements, including the first-ever measurements of the masses of 136 Sn, 137 Sn, and 138 Sn isotopes. These measurements enhance our understanding of the nuclear structure and astrophysical nucleosynthesis in this previously unexplored region. The new mass data are used for evaluation of the final abundances of mass numbers 𝐴 =135 and 137 in 𝑟-process network calculations. Our findings reveal a notable change in the empirical pairing gap for tin isotopes beyond the 𝑁 = 82 closed shell and a shift in the two-neutron-separation energy slope compared to heavier elements above the shell closure. A new set of ab initio calculations effectively describes these observed trends.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2025

Reducing Dark Conductivity of Cesium Tin Halide Perovskites with Donor Doping

The inorganic tin halide perovskites (such as Cs Sn Br 3 and Cs Sn I 3 ) exhibit high hole concentrations, which have been attributed to the presence of intrinsic defects such as cation vacancies. Despite their promise as photovoltaic materials, this high intrinsic conductivity limits deployment. Using hybrid density functional theory, we examine the impact of these intrinsic defects on the electronic properties of Cs Sn Br 3 and Cs Sn I 3 . We find that tin and cesium vacancies have low formation energies, especially under Sn -poor conditions, in agreement with prior work, and that the presence of these native acceptor defects can lead to high hole concentrations. However, effective donor doping of these systems can be obtained via Sc or Y incorporation. These impurities substitute on the Sn site, where they act as single donors. By examining the formation energy of these dopants versus the native defects, we show that Sc or Y doping should lead to a strong compensation, reducing hole concentrations under Sn -rich conditions. Published by the American Physical Society 2025

Lyons, John L. (ORCID:0000000180233055)↗
NASA NTRS1973

Radiolytic preparation of anhydrous tin (2) chloride

Anhydrous tin (2) chloride (SnCl2) is prepared by radiolysis with high energy electrons of a tin (4) chloride (SnCl4) solution in heptane. The SnCl4 is reduced to insoluble SNCl2. The energy yield, G(SnCl2), molecules of SnCl2, produced per 100 eV, increases with SnCl4 concentration from 1.6 at 0.15 M SnCl4 to 3.1 at 3.0 M SnCl4. Other parameters such as temperature total dose and beam current have little influence on G(SnCl2). The method may be used to prepare other metal halides if the higher valence, more covalent metal halide is soluble in aliphatic hydrocarbons and the lower more ionic metal halide is insoluble. The reaction mechanism is discussed; the radiolysis of both heptane and SnCl4 is involved. At high SnCl4 concentration G(SnCl2) appears to be limited by the yield of SnC13 radicals.

Philipp, W. H.↗
NASA NTRS1974

Determination of copper, scandium, molybdenum, tin, lead, and iron group elements in lunar surface materials

Distribution regularities of copper, scandium, molybdenum, tin, lead, and iron group elements were investigated in basaltoid rocks of lunar and terrestrial origin. Samples of various regolith zones taken in the area of the Sea of Fertility were analyzed, along with samples of basic and ultrabasic rocks of the East African Rift for their content of the trace admixtures listed. Data obtained on the abundance of copper, scandium, molybdenum, tin, lead, cobalt, nickel, chromium, and vanadium in Luna 16 lunar surface material were compared with the abundance of these elements in samples of lunar rocks returned by Apollo 11, Apollo 12, and Apollo 14, with the exception of scandium; its content in the latter samples was considerably higher.

Pavlenko, L. I.↗
NASA NTRS1975

Adhesion and friction behavior of group 4 elements germanium, silicon, tin, and lead

Adhesion and friction studies were conducted with thin films of the group IV elements silicon, germanium, tin, and lead ion plated on the nickel (011) substrate. The mating surface was gold (111). Contacts were made for the elements in the clean state and with oxygen present. Adhesion and friction experiments were conducted at very light loads of 1 to 10 g. Sliding was at a speed of 0.7 mm/min. Friction results indicate that the more covalently bonded elements silicon and germanium exhibit lower adhesion and friction than the more metallic bonded tin and lead. The adhesion of gold to germanium was observed, and recrystallization of the transferred gold occurred. Plastic flow of germanium was seen with sliding. Oxygen reduced, but did not eliminate, the adhesion observed with germanium and silicon.

Buckley, D. H.↗
NASA NTRS1975

Ovonic type switching in tin selenide thin films

Amorphous tin selenide thin films which possess Ovonic type switching properties are fabricated using vacuum deposition techniques. The devices are fabricated in a planar configuration and consist of amorphous tin selenide deposited over silver contacts. Results obtained indicate that Ovonic type memory switching does occur in these films with the energy density required for switching from a high impedance to a low impedance state being dependent on the spacing between the electrodes of the device. There is also a strong implication that the switching is a function of the magnitude of the applied voltage pulse.

Baxter, C. R.↗
NASA NTRS1976

Efficient photovoltaic heterojunctions of indium tin oxides on silicon

Heterojunction diodes of indium tin oxide films sputtered on to p-silicon using ion-beam techniques display significant photovoltaic effects when exposed to sunlight. Galvanomagnetic and optical measurements confirm that the oxide films are highly degenerate transparent semiconductors. At a tin oxide concentration of 10%, an open-circuit voltage of 0.51 V was observed along with a short-circuit current of 32 mA/sq cm, a fill factor of 0.70, and a conversion efficiency of 12%. As the concentration was raised to 70%, the voltage remained steady, the current fell to 27 mA/sq cm, and the fill factor fell to 0.60

Dubow, J. B.↗
NASA NTRS1977

Black chrome on commercially electroplated tin as a solar selecting coating

The reflectance properties of black chrome electroplated on commercially electroplated tin were measured for various black chrome plating times for both the solar and infrared spectrum. The values of absorptance and emittance were calculated from the measured reflectance values. The results indicate that the optimum combination of the highest absorptance in the solar region and the lowest emittance in the infrared of the black chrome plated on commercially electroplated tin is obtained for a black chrome plating time of between one and two minutes.

Mcdonald, G. E.↗