SEARCH · Engineering Papers
Results for “TRANSISTOR CIRCUIT”
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.
Substituting transistor for diode improves rectifying means
Unusual transistor connection that substitutes for a silicon diode and allows significantly higher repetition rates without increasing power loss rectifies an alternating current. Operation speed is improved by a factor of 10 or more when a given diode is replaced by this transistor circuit.
Hybrid solid state switch replaces motor- driven power switch
Hybrid solid state switch replaces existing motor-driven power switches used on spacecraft. It uses a transistor circuit to limit the open circuit voltage and allow small relay contacts to handle high transient currents at reasonable cycle life.
MOS field-effect-transistor technology
Metal oxide semiconductor field effect transistor circuit development and laminated electronic packaging for computer storage devices
High-speed, medium-power, solid-state diode driver.
Transistor circuit driving S-band diode digital shifters for phased array antenna
Multiple slope sweep generator Patent
Transistorized circuit for producing multiple slope voltage sweep
Connective stability of nonlinear matrix systems
Consideration of stability under structural perturbations of free dynamic systems described by the differential equation dx/dt = A(t,x)x, where the matrix A(t,x) has time-varying nonlinear elements. The concept of 'connective stability' is introduced to study the structural properties of competitive-cooperative nonlinear matrix systems. It is shown that stability reliability in such systems is high and that they remain stable despite time-varying (including 'on-off') interaction among individual agents present in the system. The results obtained can be used to study stability aspects of mathematical models arising in as diverse fields as economics, biology, arms races, and transistor circuits.
Voltage monitoring system
A description is given of a system for monitoring the voltage at a remote location and determining when the voltage exceeds upper and lower levels. The system includes transmission lines for transmitting the voltage back to a central station and applying such to an amplifier having a pair of outputs. One of the outputs of the amplifier is applied to an oscillograph. The other output is fed through an isolation transformer, a full wave rectifier, to a pair of unijunctional transistor circuits for producing pulses when the voltage exceeds or drops below a predetermined level. These pulses, in turn, energize a relay which turns on the oscillograph for recording the voltages being monitored.
Radiation design criteria handbook
Radiation design criteria for electronic parts applications in space environments are provided. The data were compiled from the Mariner/Jupiter Saturn 1977 electronic parts radiation test program. Radiation sensitive device types were exposed to radiation environments compatible with the MJS'77 requirements under suitable bias conditions. A total of 189 integrated circuits, transistors, and other semiconductor device types were tested.
Hardware design of a spherical mini-rover
In this hardware project the students designed the prototype of a novel mini-rover for the exploration of a planetary surface. In an actual application, a large number of such miniature roving devices would be released from a landing craft. Each rover would be equipped with a Cd 109 radio-isotope source (a gamma ray emitter) irradiating the planetary surface below the rover, and an x-ray fluorescence detector for a quantitative assay of high atomic weight elements in the planet's surface. (Similar, miniaturized, hand-held devices have recently been developed for use in gold mines). The device developed by the students was limited to demonstrating the mechanical and electrical drive. The geometric external shape is a sphere; hence there is no danger of the rover being turned on its back and stopped. Propulsion is by means of an interior mass, eccentric to the sphere and driven by an electric motor. In an inter-disciplinary effort in mechanical and electrical engineering, the students designed the mechanical parts, built the transistorized circuit board, and tested the device.
NASA Tech Briefs, December 2008
Topics covered include: Crew Activity Analyzer; Distributing Data to Hand-Held Devices in a Wireless Network; Reducing Surface Clutter in Cloud Profiling Radar Data; MODIS Atmospheric Data Handler; Multibeam Altimeter Navigation Update Using Faceted Shape Model; Spaceborne Hybrid-FPGA System for Processing FTIR Data; FPGA Coprocessor for Accelerated Classification of Images; SiC JFET Transistor Circuit Model for Extreme Temperature Range; TDR Using Autocorrelation and Varying-Duration Pulses; Update on Development of SiC Multi-Chip Power Modules; Radio Ranging System for Guidance of Approaching Spacecraft; Electromagnetically Clean Solar Arrays; Improved Short-Circuit Protection for Power Cells in Series; Electromagnetically Clean Solar Arrays; Logic Gates Made of N-Channel JFETs and Epitaxial Resistors; Improved Short-Circuit Protection for Power Cells in Series; Communication Limits Due to Photon-Detector Jitter; System for Removing Pollutants from Incinerator Exhaust; Sealing and External Sterilization of a Sample Container; Converting EOS Data from HDF-EOS to netCDF; HDF-EOS 2 and HDF-EOS 5 Compatibility Library; HDF-EOS Web Server; HDF-EOS 5 Validator; XML DTD and Schemas for HDF-EOS; Converting from XML to HDF-EOS; Simulating Attitudes and Trajectories of Multiple Spacecraft; Specialized Color Function for Display of Signed Data; Delivering Alert Messages to Members of a Work Force; Delivering Images for Mars Rover Science Planning; Oxide Fiber Cathode Materials for Rechargeable Lithium Cells; Electrocatalytic Reduction of Carbon Dioxide to Methane; Heterogeneous Superconducting Low-Noise Sensing Coils; Progress toward Making Epoxy/Carbon-Nanotube Composites; Predicting Properties of Unidirectional-Nanofiber Composites; Deployable Crew Quarters; Nonventing, Regenerable, Lightweight Heat Absorber; Miniature High-Force, Long-Stroke SMA Linear Actuators; "Bootstrap" Configuration for Multistage Pulse-Tube Coolers; Reducing Liquid Loss during Ullage Venting in Microgravity; Ka-Band Transponder for Deep-Space Radio Science; Replication of Space-Shuttle Computers in FPGAs and ASICs; Demisable Reaction-Wheel Assembly; Spatial and Temporal Low-Dimensional Models for Fluid Flow; Advanced Land Imager Assessment System; Range Imaging without Moving Parts.
Transistorized Marx bank pulse circuit provides voltage multiplication with nanosecond rise-time
Base-triggered avalanche transistor circuit used in a Marx bank pulser configuration provides voltage multiplication with nanosecond rise-time. The avalanche-mode transistors replace conventional spark gaps in the Marx bank. The delay time from an input signal to the output signal to the output is typically 6 nanoseconds.
Synthesis of current-switching circuits with cell matching using p-n-p and n-p-n transistors
Logical circuit for analysis of switching circuits with cell matching using p-n-p and n-p-n transistors
Improved methods of forming monolithic integrated circuits having complementary bipolar transistors
Two new processes form complementary transistors in monolithic semiconductor circuits, require fewer steps /infusions/ than previous methods, and eliminate such problems as nonuniform h sub FE distribution, low yield, and large device formation.
Prolonged 500 C Operation of 100+ Transistor Silicon Carbide Integrated Circuits
This report describes more than 5000 hours of successful 500 C operation of semiconductor integrated circuits (ICs) with more than 100 transistors. Multiple packaged chips with two different 4H-SiC junction field effect transistor (JFET) technology demonstrator circuits have surpassed thousands of hours of oven-testing at 500 C. After 100 hours of 500 C burn-in, the circuits (except for 2 failures) exhibit less than 10 change in output characteristics for the remainder of 500C testing. We also describe the observation of important differences in IC materials durability when subjected to the first nine constituents of Venus-surface atmosphere at 9.4 MPa and 460C in comparison to what is observed for Earth-atmosphere oven testing at 500 C.
Prolonged 500 C Operation of 100+ Transistor Silicon Carbide Integrated Circuits
This report describes more than 5000 hours of successful 500 C operation of semiconductor integrated circuits (ICs) with more than 100 transistors. Multiple packaged chips with two different 4H-SiC junction field effect transistor (JFET) technology demonstrator circuits have surpassed thousands of hours of oven-testing at 500 C. After 100 hours of 500 C burn-in, the circuits (except for 2 failures) exhibit less than 10% change in output characteristics for the remainder of 500 C testing. We also describe the observation of important differences in IC materials durability when subjected to the first nine constituents of Venus-surface atmosphere at 9.4 MPa and 460 C in comparison to what is observed for Earth-atmosphere oven testing at 500 C.
Equivalent circuit for a field effect transistor established for computer simulation
Equivalent circuit for the field effect transistor made up of circuit elements can be simulated by existing computer programs.
Aluminum heat sink enables power transistors to be mounted integrally with printed circuit board
Power transistor is provided with an integral flat plate aluminum heat sink which mounts directly on a printed circuit board containing associated circuitry. Standoff spacers are used to attach the heat sink to the printed circuit board containing the remainder of the circuitry.