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At least 73 records · Page 4

The Fast Evolution of SN 2010bh Associated with XRF 100316D

The first observational evidence of a connection between supernovae (SNe) and gamma-ray bursts (GRBs) was found about a decade ago. Since then, only half a dozen spectroscopically confirmed associations have been discovered and XRF 1003160 associated with the type-Ic SN 20lObh is among the latest. Aims. We constrain the progenitor radius, the host-galaxy extinction, and the physical parameters of the explosion of XRF l00316D/SN 20lObh at z 0.059. We study the SN brightness and colours in the context of GRB-SNe. Methods. We began observations with the Gamma-Ray burst Optical and Near-infrared Detector (GROND) 12 hours after the GRB trigger and continued until 80 days after the burst. GROND provided excellent photometric data in six filter bands covering a wavelength range from approximately 350 to 1800 nm, significantly expanding the pre-existing data set for this event. Combining GROND and Swift data, the early broad-band spectral energy distribution (SED) is modelled with a blackbody and afterglow component attenuated by dust and gas absorption. The temperature and radius evolution of the thermal component are analysed and combined with earlier measurements available from the literature. Templates of SN 1998bw are fitted to the SN itself to directly compare the lightcurve properties. Finally, a two-component parametrized model is fitted to the quasi-bolometric light curve. which delivers physical parameters of the explosion. Results. The best-fit models to the broad-band SEDs imply moderate reddening along the line of sight through the host galaxy (A(sub v.host = 1.2 +/- 0.1 mag). Furthermore, the parameters of the blackbody component reveal a cooling envelope at an apparent initial radius of 7 x 10(exp 11) cm, which is compatible with a dense wind surrounding a Wolf-Rayet star. A multicolor comparison shows that SN 2010bh is 60 - 70% as bright as SN 1998bw. Reaching maximum brightness at 8 - 9 days after the burst in the blue bands, SN 20lObh proves to be the most rapidly evolving GRB-SNe to date. Modelling of the quasi-bolometric light curve yields M(sub Ni) = 0.21 +/- 0.03 solar M and M(sub ej) = 2.6 +/- 0.2 solar M, typical of values within the GRB-SN population. The kinetic energy is E(sub k) = (2.4 +/- 0.7) x 10(exp 52) erg, which is making this SN the second most energetic GRB-SN after SN 1998bw. Conclusions. This supernova has one of the earliest peaks ever recorded and thereafter fades more rapidly than other GRB-SNe, hypernovae, or typical type-Ic SNe. This could be explained by a thin envelope expanding at very high velocities, which is therefore unable to retain the gamma-rays that would prolong the duration of the SN event.

Olivares E., F.↗

Smooth, homogeneous, high-purity Nb 3 Sn superconducting RF resonant cavity by seed-free electrochemical synthesis

Abstract Workbench-size particle accelerators, enabled by Nb 3 Sn-based superconducting radio-frequency (SRF) cavities, hold the potential of driving scientific discovery by offering a widely accessible and affordable source of high-energy electrons and x-rays. Thin-film Nb 3 Sn RF superconductors with high quality factors, high operation temperatures, and high-field potentials are critical for these devices. However, surface roughness, non-stoichiometry, and impurities in Nb 3 Sn deposited by conventional Sn-vapor diffusion prevent them from reaching their theoretical capabilities. Here we demonstrate a seed-free electrochemical synthesis that pushes the limit of chemical and physical properties in Nb 3 Sn. Utilization of electrochemical Sn pre-deposits reduces the roughness of converted Nb 3 Sn by five times compared to typical vapor-diffused Nb 3 Sn. Quantitative mappings using chemical and atomic probes confirm improved stoichiometry and minimized impurity concentrations in electrochemically synthesized Nb 3 Sn. We have successfully applied this Nb 3 Sn to the large-scale 1.3 GHz SRF cavity and demonstrated ultra-low BCS surface resistances at multiple operation temperatures, notably lower than vapor-diffused cavities. Our smooth, homogeneous, high-purity Nb 3 Sn provides the route toward high efficiency and high fields for SRF applications under helium-free cryogenic operations.

Physics↗

Neutron transfer reactions on the ground state and isomeric state of a 130 Sn beam

The structure of nuclei around the neutron-rich nucleus 132 Sn is of particular interest due to the vicinity of the Z = 50 and N = 82 shell closures and the r-process nucleosynthetic path. Four states in 131 Sn with a strong single-particle-like component have previously been studied via the (d,p) reaction, with limited excitation energy resolution. Here, the 130 Sn( 9 Be, 8 Be) 131 Sn and 130 Sn( 13 C, 12 C) 131 Sn single-neutron transfer reactions were performed in inverse kinematics at the Holifield Radioactive Ion Beam Facility using particle-γ coincidence spectroscopy. The uncertainties in the energies of the single-particle-like states have been reduced by more than an order of magnitude using the energies of γ rays. The previous tentative J π values have been confirmed. Decays from high-spin states in 131 Sn have been observed following transfer on the isomeric component of the 130 Sn beam. The improved energies and confirmed spin-parities of the p-wave states important to the r-process lead to direct-semidirect cross-sections for neutron capture on the ground state of 130 Sn at 30 keV that are in agreement with previous analyses. A similar assessment of the impact of neutron-transfer on the isomer would require significant nuclear structure and reaction theory input. There are few measurements of transfer reaction on isomers, and this is the first on an isomer in the 132 Sn region.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗

Nb 3 Sn coating of SRF cavity by cosputtering from a composite target

Here, we deposited an Nb 3 Sn film on the inner surface of a 2.6 GHz Nb superconducting radio frequency cavity by cosputtering using a composite of Nb and Sn tube targets in a DC cylindrical magnetron sputtering system, followed by the thermal annealing of the coated cavity. An aluminum mockup cavity, replicating a 2.6 GHz Nb SRF cavity geometry, was utilized to optimize deposition parameters, resulting in cosputtered Nb–Sn films with an Sn content of 32–42 at. % on the beam tubes and equator positions. Several annealing conditions were investigated to improve the surface homogeneity of the Nb 3 Sn film. The best cosputtered Nb–Sn film was achieved after annealing at 600 °C for 6 h, followed by annealing at 950 °C for 1 h. The best process was applied to a Nb cavity, which was RF tested in a cryogenic dewar. RF testing of the Nb 3 Sn-coated cavity demonstrated a superconducting transition temperature of 17.78 K. The Nb 3 Sn cavity underwent light Sn recoating, followed by additional RF testing, resulting in the enhancement of the RF performance, primarily due to the improved surface homogeneity of the Nb 3 Sn coating.

Nb3Sn film↗

SN 2010j1: Optical to Hard X-Ray Observations Reveal an Explosion Embedded in a Ten Solar Mass Cocoon

Some supernovae (SNe) may be powered by the interaction of the SN ejecta with a large amount of circumstellar matter (CSM). However, quantitative estimates of the CSM mass around such SNe are missing when the CSM material is optically thick. Specifically, current estimators are sensitive to uncertainties regarding the CSM density profile and the ejecta velocity. Here we outline a method to measure the mass of the optically thick CSM around such SNe. We present new visible-light and X-ray observations of SN 2010jl (PTF 10aaxf), including the first detection of an SN in the hard X-ray band using NuSTAR. The total radiated luminosity of SN 2010jl is extreme atleast 9 1050 erg. By modeling the visible-light data, we robustly show that the mass of the circumstellar material within 1016 cm of the progenitor of SN 2010jl was in excess of 10M_. This mass was likely ejected tens of years prior to the SN explosion. Our modeling suggests that the shock velocity during shock breakout was 6000 km s1, decelerating to 2600 km s1 about 2 yr after maximum light. Furthermore, our late-time NuSTAR and XMM spectra of the SN presumably provide the first direct measurement of SN shock velocity 2 yr after the SN maximum light measured to be in the range of 2000-4500 km s1 if the ions and electrons are in equilibrium, and_2000 km s1 if they are not in equilibrium. This measurement is in agreement with the shock velocity predicted by our modeling of the visible-light data. Our observations also show that the average radial density distribution of the CSM roughly follows an r2 law. A possible explanation for the _10M_ of CSM and the wind-like profile is that they are the result of multiple pulsational pair instability events prior to the SN explosion, separated from each other by years.

circumstellar matter (CSM)↗

Operational stability of mixed Sn–Pb perovskite solar cells: Mechanisms, mitigation strategies, and perspectives

Mixed Sn–Pb perovskites provide the 1.2–1.3 eV narrow-bandgap absorber needed for high efficiency of all perovskite tandems, but their deployment is limited by operational instability under light. This review synthesizes mechanistic origins and recent mitigation strategies for mixed Sn–Pb perovskite solar cells. The oxidation of Sn 2+ to Sn 4+ , often driven by iodine formation under light and bias, is the primary failure pathway; it creates Sn vacancies, self-doping, and nonradiative loss. Surface/grain-boundary defects, halide migration, reactive oxygen species, and interfacial redox at charge-transport layers, along with hole accumulation from poor band alignment, further accelerate Sn–Pb perovskite degradation. Here we survey recent stability advances across additive chemistry, surface and grain-boundary passivation, buried-interface redesign with modified or alternative hole transport layers, and solvent systems that preserve Sn 2+ and correct Sn–Pb speciation for scalable coating. Together, these recent advances have enabled devices to retain 80%–90% output for hundreds to over a thousand hours. Lastly, we provide our perspectives on further improving the operational stability of Sn–Pb perovskite and solar cells.

14 SOLAR ENERGY↗

A reversible four-electron Sn metal aqueous battery

Sn is a promising metal anode for aqueous batteries, with up to four-electron redox available per atom (903 mAh g −1 Sn ). However, practically harnessing the four-electron Sn(OH) 6 2− /Sn reversibility remains challenging due to limited mechanistic understanding. Here, in this study, we reveal a kinetically asymmetric redox pathway involving a successive four-electron plating and a stepwise 2 + 2 electron stripping through a Sn(OH) 3 − intermediate. The crossover of Sn(OH) 3 − induces a reversible self-discharge that reduces Coulombic efficiency but does not impact cyclability, demonstrated by four-electron Sn-Ni full cells that sustain >800 h of stable cycling. By tuning the ion selectivity of the separator to suppress Sn(OH) 3 − crossover while allowing OH − transport, we further demonstrate high Sn utilization (67%) and high energy density (143.1 Wh L −1 cell). The results provide key understandings of the tradeoffs in engineering reversible multi-electron metal anodes and define a new benchmark for practical energy density that exceeds any Sn-based aqueous batteries to date.

SN anode↗

Photometric and spectroscopic observations of SN 1990E in NGC 1035 - Observational constraints for models of type II supernovae

We present 126 photometric and 30 spectral observations of SN 1990E spanning from 12 days before B maximum to 600 days past discovery. These observations show that SN 1990E was of type II-P, displaying hydrogen in its spectrum, and the characteristic plateau in its light curve. SN 1990E is one of the few SNe II which has been well observed before maximum light, and we present evidence that this SN was discovered very soon after its explosion. In the earliest spectra we identify, for the first time, several N II lines. We present a new technique for measuring extinction to SNe II based on the evolution of absorption lines, and use this method to estimate the extinction to SN 1990E, A(V) = 1.5 +/- 0.3 mag. From our photometric data we have constructed a bolometric light curve for SN 1990E and show that, even at the earliest times, the bolometric luminosity was failing rapidly. We use the late-time bolometric light curve to show that SN 1990E trapped a majority of the gamma rays produced by the radioactive decay of Co-56, and estimate that SN 1990E ejected an amount of Ni-56 virtually identical to that of SN 1987A.

Schmidt, Brian P.↗

Mechanistic origin of solvent-dependent thermal stability in sodiated Sn anodes for sodium-ion batteries

Understanding the thermal stability of high-energy density alloy anodes is critical for the safe deployment of sodium-ion batteries (SIBs). Here, accelerating rate calorimetry (ARC), post-mortem characterizations, and density functional theory (DFT) calculations are combined to understand the thermal reactivity of fully sodiated Sn, Sn-hard carbon (HC) blends, and HC anodes in carbonate- and ether-based electrolytes. ARC measurements show that propylene carbonate (PC) causes earlier self-heating rate (SHR) onset and higher reactivity than tetraethylene glycol dimethyl ether (TEGDME), indicating inferior thermal stability. Sodiated Sn exhibits better thermal stability than sodiated HC, while Sn-HC blends show intermediate behavior that improves with increasing Sn content. Post-ARC analyses reveal desodiation of Na15Sn4 to metallic Sn with particle coalescence, whereas Sn-HC blends and HC retain finer morphologies. PC promotes Sn oxidation to SnO, while TEGDME suppresses oxide formation; NaPF6-containing electrolytes additionally form NaF. DFT calculations show that PC adsorption lowers Na extraction energy and enhances interfacial electronic interactions, facilitating Na release and reductive decomposition. These results establish a direct correlation between solvent-dependent reaction pathways and thermal stability in SIB alloy anodes.

Accelerating rate calorimetry↗

Thermodynamic re-modelling of the Cu–Nb–Sn system: Integrating the nausite phase

Currently available Cu–Nb–Sn phase diagrams lack the recently discovered nausite phase (Cu,Nb)Sn 2 , which is an important intermediate in the course of thermal processing of superconducting Nb 3 Sn wires. Processing decisively determines the resulting microstructure of Nb 3 Sn and, thus, its superconducting properties. Lack of suitable and complete phase diagrams, however, obstructs rational design of such thermal processing procedures. To close this gap and to obtain valid knowledge of homogeneity and stability range of nausite, various Cu–Nb–Sn samples, which are heat-treated between 300 °C and 500 °C, are investigated. By means of energy-dispersive X-ray spectroscopy (EDX), a temperature-dependent homogeneity range of nausite is observed, which covers average mole fractions of Cu between 0.09 and 0.15. This is correlated with a change in the mean atomic volume and can be seen in the lattice parameters determined by X-ray diffraction (XRD). Additionally performed first-principles calculations on different CuSn 2 and NbSn 2 model structures confirm this trend. Furthermore, the peritectic decomposition of nausite to NbSn 2 and liquid at 586 °C is determined by means of in situ XRD and differential scanning calorimetry (DSC). By using the CALPHAD (CALculation of PHase Diagrams) approach, all these findings are used to extend a previous thermodynamic description of the Cu–Nb–Sn system by including the nausite as an additional phase. Finally, with this noteworthy integration, the updated modelling of the Cu–Nb–Sn system can be used for optimizing the multistage heat-treatment steps during processing superconducting Nb 3 Sn wires.

36 MATERIALS SCIENCE↗

Layered Sn-Au Thin Films for Increased Electrochemical ATR-SEIRAS Enhancement

Operando electrochemical attenuated total reflection surface-enhanced infrared absorption spectroscopy (EC ATR-SEIRAS) is a valuable method for a fundamental understanding of electrochemical interfaces under real operating conditions. The applicability of this method depends on the ability to tune the optical and catalytic properties of an electrode film, and it thus requires unique optimization for any given material. Motivated by the growing interest in Sn-based electrocatalysts for selective reduction of CO2 to formate species, we investigate several Sn thin-film synthesis routes for the resulting SEIRA signal response. We compare the SEIRA performance of thermally evaporated metallic Sn to a series of Sn-based films on top of a SEIRA-active Au substrate (metallic Sn, oxide-derived metallic Sn, and metal oxide SnOx). Using alkanethiol self-assembled monolayers as a probe, we find that electrodepositing metallic catalyst films on top of SEIRA-active Au substrates yield higher signal relative to thermal evaporation as well as higher signal than the independent SEIRA-active Au underlayer. These observations come despite the fact that thermally evaporated Sn has a significantly higher surface roughness (and thus higher adsorbate population), suggesting specific SEIRA-magnifying effects for the stacked films. Finally, we applied these films to observe the electrochemical conversion of CO2. Differences are observed in spectral features based on the composition of the electrode being either metallic or oxide-derived metallic Sn, implying differences in their respective reaction pathways.

CO2 reduction↗

Solution Processed Ternary Tin (II) Alloy as Hole–Transport Layer of Sn–Pb Perovskite Solar Cells for Enhanced Efficiency and Stability

Tin-lead (Sn-Pb) narrow bandgap (NBG) perovskites show great potential in both single-junction and all-perovskite tandem solar cells. Sn-Pb perovskite solar cells (PSCs) are still limited by low charge collection efficiency and poor stability. Here, we report a ternary Sn (II) alloy of SnOCl as the hole-transport material (HTM) with a work function of 4.95 eV for Sn-Pb PSCs. The solution processed SnOCl layer has a texture structure which not only reduces the optical loss of the devices but also changes grain growth of Sn-Pb perovskites and boosts the carrier diffusion length to 3.63 μm. The formation of small perovskite grains at the HTM/perovskite interface is suppressed. These result in an almost constant internal quantum efficiency of 96 ± 2% across the absorption spectrum of Sn-Pb perovskites. The SnOCl HTM significantly enhances the stability of Sn-Pb PSCs with 87% of its initial efficiency retained after 1-sun illumination for 1,200 h, and keep 85% efficiency under 85°C thermal stress for 1,500 h. Furthermore, the hybrid HTM further improve the stabilized efficiencies of single-function Sn-Pb PSCs and all-perovskite tandem solar cells to 23.2% and 25.9%, respectively. This discovery opens an avenue to the multi-component metal alloys as HTM in PSCs.

36 MATERIALS SCIENCE↗

Strain Relaxation and Relative Defect Density with Thickness in MBE-Grown Ge 0.85 Sn 0.15 on Ge(001)

Germanium–tin (GeSn) alloys are emerging as promising materials for mid-infrared optoelectronics and silicon-compatible photonic devices, owing to their tunable direct bandgap. However, the growth of high-quality GeSn films with high Sn content remains challenging due to strain-induced defect formation. In this study, we investigate the role of film thickness on strain-induced relaxation, defect density, and Sn segregation. A series of five samples with varying thicknesses and ∼15% Sn-containing GeSn layers were grown, ranging from the critical thickness for strain relaxation to the onset of Sn segregation. All GeSn samples were analyzed using X-ray diffraction reciprocal space mapping (XRD-RSM) to explore the evolution of strain-induced relaxation as a function of thickness. Photoluminescence measurements reveal that increasing the GeSn thickness enhances strain relaxation while reducing defect-related emission, indicating a decrease in effective defect density prior to reaching the threshold thickness of GeSn layer. At a thickness of ∼150 nm, the GeSn layer shows the onset of Sn segregation, evident in the XRD-RSM spectrum, marking the threshold thickness for Sn segregation. This work defines an effective growth window in terms of thickness (35 to 150 nm) for fabricating relaxed, defect-suppressed GeSn layers with 15% Sn content. These findings emphasize the crucial role of thickness control in balancing strain relaxation and defect suppression, advancing the fabrication of high-quality, high Sn-content relaxed GeSn using molecular beam epitaxy.

Defects↗

Crystal structure and magnetic properties in semiconducting Eu 3-δ Zn x Sn y As 3 with Eu-Eu dimers

Magnetic structure and crystal symmetry, which primarily determine the time-reversal and inversion symmetry, may give rise to numerous exotic quantum phenomena in magnetic semiconductors and semimetals when arranged in different patterns. Here, a new layered magnetic semiconductor, Eu 3-δ Zn x Sn y As 3 , was discovered and high-quality single crystals were grown using the Sn flux. According to structural characterization by x-ray diffraction and atomic-resolution scanning transmission electron microscopy, Eu 3-δ Zn x Sn y As 3 is found to crystallize in a hexagonal symmetry with the space group P6 3 /mmc (No. 194). After examining different specimens, we conclude that their stoichiometry is fixed at ~Eu 2.6 Zn 0.65 Sn 0.85 As 3 , which meets the chemical charge balance. Eu 3-δ Zn x Sn y As 3 is composed of septuple (Eu 1-δ Sn y As 2 )-Eu-(Zn x As)-Eu sequences. The shortest Eu–Eu distance in the system is between two Eu layers separated by Zn x As along the c-axis. Magnetization measurement shows an antiferromagnetic ordering in Eu 3-δ Zn x Sn y As 3 at T N ~ 12 K, where the magnetic easy-axis is along the c-axis, and Mössbauer spectroscopy observes magnetic hyperfine splitting on Eu and Sn at 6 K. Magnetic anisotropy is significantly different from the ones along the ab-plane in other layered Eu-based magnetic semimetals. Heat capacity measurements confirm the magnetic transition around 12 K. Electrical resistivity measurement indicates semiconductor behavior with a band gap of ~0.86 eV. Finally, various Eu-based magnetic semiconductors could provide a tunable platform to study potential topological and magnetic properties.

36 MATERIALS SCIENCE↗

Local ordering in Ge/Ge–Sn semiconductor alloy core/shell nanowires revealed by extended x-ray absorption fine structure (EXAFS)

Short-range atomic order in semiconductor alloys is a relatively unexplored topic that may promote design of new materials with unexpected properties. Here, local atomic ordering is investigated in Ge–Sn alloys, a group-IV system that is attractive for its enhanced optoelectronic properties achievable via a direct gap for Sn concentrations exceeding ≈10 at. %. The substantial misfit strain imposed on Ge–Sn thin films during growth on bulk Si or Ge substrates can induce defect formation; however, misfit strain can be accommodated by growing Ge–Sn alloy films on Ge nanowires, which effectively act as elastically compliant substrates. In this work, Ge core/Ge 1–x Sn x (x ≈ 0.1) shell nanowires were characterized with extended x-ray absorption fine structure (EXAFS) to elucidate their local atomic environment. Simultaneous fitting of high-quality EXAFS data collected at both the Ge K-edge and the Sn K-edge reveals a large (≈ 40%) deficiency of Sn in the first coordination shell around a Sn atom relative to a random alloy, thereby providing the first direct experimental evidence of significant short-range order in this semiconductor alloy system. Furthermore, comparison of path length data from the EXAFS measurements with density functional theory simulations provides alloy atomic structures consistent with this conclusion.

36 MATERIALS SCIENCE↗

Diffusion of Sn donors in β-Ga 2 O 3

Diffusion of the n-type dopant Sn in β-Ga 2 O 3 is studied using secondary-ion mass spectrometry combined with hybrid functional calculations. The diffusion of Sn from a Sn-doped bulk substrate with surface orientation (001) into an epitaxial layer is observed after heat treatments in the temperature range of 1050–1250 °C. Calculated formation energies of Sn-related and intrinsic defects show that the migration of Sn is mediated by Ga vacancies ( V Ga ) through the formation and dissociation of intermittent mobile V Ga Sn Ga complexes. The evolution of the Sn concentration vs depth profiles after heat treatments can be well described by a reaction–diffusion model. Using model parameters guided by the hybrid functional calculations, we extract a V Ga Sn Ga complex migration barrier of 3.0 ± 0.4 eV with a diffusion coefficient of 2 × 10 –1 cm 2 /s. The extracted migration barrier is consistent with our theoretical predictions using the nudged elastic band method, which shows migration barriers of 3.42, 3.15, and 3.37 eV for the [100], [010], and [001] directions, respectively.

36 MATERIALS SCIENCE↗

A puzzle solved after two decades: SN 2002gh among the brightest of superluminous supernovae

ABSTRACT We present optical photometry and spectroscopy of the superluminous SN 2002gh from maximum light to +204 d, obtained as part of the Carnegie Type II Supernova (CATS) project. SN 2002gh is among the most luminous discovered supernovae ever, yet it remained unnoticed for nearly two decades. Using Dark Energy Camera archival images we identify the potential supernova (SN) host galaxy as a faint dwarf galaxy, presumably having low metallicity, and in an apparent merging process with other nearby dwarf galaxies. We show that SN 2002gh is among the brightest hydrogen-poor SLSNe with MV = −22.40 ± 0.02, with an estimated peak bolometric luminosity of 2.6 ± 0.1 × 1044 erg s−1. We discount the decay of radioactive nickel as the main SN power mechanism, and assuming that the SN is powered by the spin-down of a magnetar we obtain two alternative solutions. The first case, is characterized by significant magnetar power leakage, and Mej between 0.6 and 3.2 M⊙, Pspin = 3.2 ms, and B = 5 × 1013 G. The second case does not require power leakage, resulting in a huge ejecta mass of about 30 M⊙, a fast spin period of Pspin ∼ 1 ms, and B ∼ 1.6 × 1014 G. We estimate a zero-age main-sequence mass between 14 and 25 M⊙ for the first case and of about 135 M⊙ for the second case. The latter case would place the SN progenitor among the most massive stars observed to explode as an SN.

79 ASTRONOMY AND ASTROPHYSICS↗

The ASAS-SN bright supernova catalogue – V. 2018–2020

We catalogue the 443 bright supernovae (SNe) discovered by the All-Sky Automated Survey for Supernovae (ASAS-SN) in 2018−2020 along with the 519 SNe recovered by ASAS-SN and 516 additional m peak ≤ 18 mag SNe missed by ASAS-SN. Our statistical analysis focuses primarily on the 984 SNe discovered or recovered in ASAS-SN g-band observations. The complete sample of 2427 ASAS-SN SNe includes earlier V-band samples and unrecovered SNe. For each SN, we identify the host galaxy, its UV to mid-IR photometry, and the SN’s offset from the centre of the host. Updated peak magnitudes, redshifts, spectral classifications, and host galaxy identifications supersede earlier results. With the increase of the limiting magnitude to g ≤ 18 mag, the ASAS-SN sample is nearly complete up to m peak = 16.7 mag and is 90 per cent complete for m peak ≤ 17.0 mag. This is an increase from the V-band sample, where it was roughly complete up to m peak = 16.2 mag and 70 per cent complete for m peak ≤ 17.0 mag.

79 ASTRONOMY AND ASTROPHYSICS↗