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At least 73 records · Page 4

Return stroke velocities and currents using a solid state silicon detector system

A small, portable device has been developed to measure return stroke velocities. With the device, velocities from 135 strokes that consist of 92 natural return strokes and 43 triggered return strokes have been analyzed. The average return stroke velocity for longer channels, greater than 500 meters, is 1.2 + or - 0.3 x 10 to the 8th m/s for both natural and triggered return strokes. For shorter channel lengths, less than 500 m, natural lightning has a statistically higher average return stroke velocity of 1.9 + or - 0.7 x 10 to the 8th m/s than triggered lightning with an average return stroke velocity of 1.4 + or - 0.4 x 10 to the 8th m/s. Using the transmission line model of the return stroke, natural lightning has a peak current distribution that is log-normal with a median value of 19 kA. Return stroke velocities and currents were determined for two distant single stroke natural positive cloud-to-ground flashes. The velocities were 1.0 and 1.7 x 10 to the 8th ms/s while the estimated peak current for each positive flash was over 125 kA.

Mach, Douglas M.↗

Charge Detector for the Imaging Calorimeter for ACCESS (ICA)

NASA's Advanced Cosmic Ray Experiment for the Space Station (ACCESS) Mission is planned to consist of a transition radiation detector (TRD) and a thin ionization calorimeter. In order to measure the charge of the primary cosmic ray, it is necessary for the calorimeter to have its own charge detector. Silicon detectors are chosen for the charge detector because of their excellent resolution, small size and nearly square shape. Monte Carlo simulations are performed to find the probability of misidentifying protons as alpha particles due to backscattered radiation from the calorimeter. Simulations were also used to investigate identifying primary cosmic rays that fragmented in the TRD before reaching the calorimeter. For this study algorithms have been developed for determining a direction of the core shower in the calorimeter. These algorithms are used to find the approximate location of the primary particle in the silicon detectors. Results show the probability to misidentify the charge depends upon the energy and direction of the primary particles.

Lee, Jeongin↗

Thin film charged particle detectors

Silicon tracking detectors have grown to cover larger surface areas up to hundreds of square meters, and are even taking over other sub-detectors, such as calorimeters. However, further improvements in tracking detector performance are more likely to arise from the ability to make a low mass detector comprised of a high ratio of active sensor to inactive materials, where dead materials include electrical services, cooling, mechanical supports, etc. In addition, the cost and time to build these detectors is currently large. Therefore, advancements in the fundamental technology of tracking detectors may need to look at a more transformative approach that enables extremely large area coverage with minimal dead material and is easier and faster to build. The advancement of thin film fabrication techniques has the potential to revolutionize the next-to-next generation of particle detector experiments. Some thin film deposition techniques have already been developed and widely used in the industry to make LED screens for TVs and monitors. If large area thin film detectors on the order of several square meters can be fabricated with similar performance as current silicon technologies, they could be used in future particle physics experiments. This paper aims to review the key fundamental performance criteria of existing silicon detectors and past research to use thin films and other semi-conductor materials as particle detectors in order to explore the important considerations and challenges to pursue thin film detectors.

Solid state detectors↗

Tunnel oxide passivating contact enabled by polysilicon on ultra-thin SiO 2 for advanced silicon radiation detectors

Conventional silicon junction detectors encounter significant carrier recombination within the heavily doped p⁺ and n⁺ layers, as well as beneath the metal contact regions, creating the so-called “dead layers”, especially on the detector side. In this study, we present the tunnel oxide passivating contact with doped polysilicon on oxide, which demonstrates exceptional surface passivation and carrier selectivity. The key innovation lies in an ultra-thin (~ 1.5 nm) interfacial oxide layer that facilitates efficient majority carrier transportation via tunneling while effectively block minority carriers. Remarkably low saturation current densities, ranging from 5 to 10 fA/cm² even with the metal contact, underscore the superiority of both n-type and p-type tunnel oxide passivating contacts. In contrast, conventional p–n junction or high-low junction exhibit saturation current densities ranging from 10 to 90 fA/cm² in the studied p⁺ and n⁺ layers with surface passivation schemes due to Auger recombination and surface recombination, and 1000–6000 fA/cm² with metal contacts due to intense metal-induced recombination at the interface. These findings indicate the potential and superiority of implementing n-type tunnel oxide passivating contact on the detector side and p-type contact on the back side for advanced silicon radiation detectors. This approach would enable thorough collection of generated charge carriers along the track of incident ionizing radiation particles, leading to improved energy resolution and reduced noise levels.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Forward silicon vertex/tracking detector design and R$\&$D for the future Electron-Ion Collider

The proposed high-luminosity high-energy Electron-Ion Collider (EIC) will provide a clean environment to precisely study several fundamental questions in the fields of high-energy and nuclear physics . A low material budget and high granularity silicon vertex/tracking detector is critical to carry out a series of hadron and jet measurements at the future EIC especially for the heavy flavor product reconstruction or tagging. The conceptual design of a proposed forward silicon tracking detector with the pseudorapidity coverage from 1.2 to 3.5 has been developed in integration with different magnet options and the other EIC detector sub-systems. The tracking performance of this detector enables precise heavy flavor hadron and jet measurements in the hadron beam going direction. The detector R&D for the proposed silicon technology candidates: Low Gain Avalanche Diode (LGAD) and radiation hard depleted Monolithic Active Pixel Sensor (MALTA), which can provide good spatial and timing resolutions, is underway. Bench test results of the LGAD and MALTA prototype sensors will be discussed.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

Advanced silicon tracking detector developments for the future Electron-Ion Collider

The proposed Electron-Ion Collider (EIC) will operate high-luminosity high-energy electron+proton and electron+nucleus collisions at the collision energies from 20 GeV to 141 GeV to solve several fundamental questions in the high energy and nuclear physics fields. Its instantaneous luminosity can reach 10 33-34 cm -2 s -1 and the bunching crossing rate is around 10 ns. The EIC project has received CD1 approval from the US DOE in 2021 and moves toward the machine design and preparation for construction. To realize various particle measurements with high precision at the future EIC, a low material-budget and high-granularity silicon vertex and tracking detector with fine spatial and momentum resolutions and nearly 4π solid angle coverage is desired. The Monolithic Active Pixel Sensor (MAPS) and AC Coupled Low Gain Avalanche Diode (AC-LGAD) technologies stand out of several advanced technology options for the EIC silicon vertex and tracking detector subsystems. The MAPS technology has advanced features of low material budget, low power consumption, good radiation resistance and fine spatial resolution. The AC-LGAD technology can achieve fast timing resolution. Latest studies and progress of the EIC silicon vertex and tracking detector conceptual design, performance validations in simulation and ongoing MAPS and AC-LGAD R&D will be shown. Furthermore, schedule and plan of the EIC project detector development will be discussed as well.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Development of Ultra-High Sensivity Silicon Carbide Detectors

A variety of silicon carbide (SiC) detectors have been developed to study the sensitivity of SiC ultraviolet (UV) detectors, including Schottky photodiodes, p-i-n photodiodes, avalanche photodiodes (APDs), and single photon-counting APDs. Due to the very wide bandgap and thus extremely low leakage current, Sic photo-detectors showed excellent sensitivity. The specific detectivity, D*, of SiC photodiodes are orders of magnitude higher than that of their competitors, such as Si photodiodes, and comparable to the D* of photomultiplier tubes (PMTs). To pursue the ultimate detection sensitivity, SiC APDs and single photon-counting avalanche diodes (SPADs) have also been fabricated. By operating the SiC APDs at a linear mode gain over 10(exp 6), SPADs in UV have been demonstrated. SiC UV detectors have great potential for use in solar blind UV detection and biosensing. Moreover, SiC detectors have excellent radiation hardness and high temperature tolerance which makes them ideal for extreme environment applications such as in space or on the surface of the Moon or Mars.

Yan, Feng↗

The ladder and readout cables of intermediate silicon strip detector for sPHENIX

A new silicon-strip-type detector was developed for precise charged-particle tracking in the central rapidity region of heavy ion collisions. A new detector and collaboration at the Relativistic Heavy Ion Collider at Brookhaven National Laboratory is sPHENIX, which is a major upgrade of the PHENIX detector. The intermediate tracker (INTT) is part of the advanced tracking system of the sPHENIX detector complex together with a CMOS monolithic-active-pixel-sensor based silicon-pixel vertex detector, a time-projection chamber, and a micromegas-based detector. The INTT detector is barrel shaped and comprises 56 silicon ladders. Two different types of strip sensors of 78 micron pitch and 320 micron thick are mounted on each half of a silicon ladder. Each strip sensor is segmented into 8 × 2 and 5 × 2 blocks with lengths of 16 and 20 mm. Strips are read out with a silicon strip-readout (FPHX) chip. In order to transmit massive data from the FPHX to the down stream readout electronics card (ROC), a series of long and high speed readout cables were developed. This document focuses on the silicon ladder, the readout cables, and the ROC of the INTT. The radiation hardness is studied for some parts of the INTT devices in the last part of this document, since the INTT employed some materials from the technology frontier of the industry whose radiation hardness is not necessarily well known.

43 PARTICLE ACCELERATORS↗

Cosmic ray positron research and silicon track detector development

The purpose was to conduct research on: (1) position sensing detector systems, particularly those based upon silicon detectors, for use in future balloon and satellite experiments; and (2) positrons, electrons, proton, anti-protons, and helium particles as measured by the NASA NMSU Balloon Magnet Facility.

Jones, W. Vernon↗

Highly Segmented Silicon Strip Detectors for Radiation Detection (LDRD Final Report)

Large area highly segmented silicon strip detectors were investigated for use in applied radiation detection applications. Two ASIC-based readout electronics solutions were tested for compatibility. During the analysis, it was determined that significant computational resources and highly specialized firmware are required to reconstruct the data into a meaningful data stream for generalized spectroscopic performance. Future investment in the technology and careful choice of readout ASIC is expected to demonstrate relevance in measuring high activity samples.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Characterization of Large-Area Silicon Ionization Detectors for the ACE Mission

We report on extensive tests of large-area (10cm diameter) high-purity ion-implanted silicon detectors for th Solar Isotope Spectrometer (SIS), and lithium-drifted silicon detetors for the Cosmic Ray Isotope Spectrometer (CRIS), which are under development for launch on the Advanced Composition Explorer (ACE) mission.

silicon↗

Simulations of Silicon Radiation Detectors for High Energy Physics Experiments

Silicon radiation detectors are an integral component of current and planned collider experiments in high energy physics. Simulations of these detectors are essential for deciding operational configurations, for performing precise data analysis, and for developing future detectors. In this white paper, we briefly review the existing tools and discuss challenges for the future that will require research and development to be able to cope with the foreseen extreme radiation environments of the High Luminosity runs of the Large Hadron Collider and future hadron colliders like FCC-hh and SPPC.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗