Two-Emitter Multimode Cavity Quantum Electrodynamics in Thin-Film Silicon Carbide Photonics
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75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
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Results for “Silicon Photonics”
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Integrated Quantum Photonics with Silicon Carbide: Challenges and Prospects
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Lukin, Daniil M.↗
NIR Ring Mirror Laser Utilizing Low Loss Silicon Nitride Photonic Platform
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Starbuck, Andrew Lea↗
TTDAQ: A Continuous Flow, Timing and Trigger DAQ System
Final Scientific/Technical Report for DOE Award DE-SC0019581, “TTDAQ: A Continuous Flow, Timing and Trigger DAQ System.” The report summarizes Telluric Labs’ Phase II STTR work developing silicon-photonic building blocks for a software-defined, continuous-flow, trigger-less data acquisition system for next-generation high-energy and nuclear-physics detectors. The project focused on radiation-hard photonic integrated circuits, remote optical illumination, dense wavelength-division multiplexing, and a differential microring-resonator transceiver architecture designed to improve high-speed optical link stability and bandwidth. The report describes project objectives, technical accomplishments, AIM Photonics tape-outs, bench characterization, radiation-hardness testing, deferred integration work, and potential applications beyond physics readout.
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
Status and Predicted Performance for the AstroPIC Integrated Photonic Coronagraph
Integrated photonics is a promising coronagraph technology option for exoplanet-imaging missions like NASA’s Habitable Worlds Observatory flagship. It is theoretically capable of achieving better performance than traditional bulk-optic coronagraphs because arrays of integrated interferometers can be combined to implement any linear operator. However, photonic coronagraphs require significant maturation to be ready for a space telescope mission. The AstroPIC project is advancing this technology by developing a proof-of-concept integrated photonic coronagraph based on silicon photonic integrated circuit (PIC) technology. Specifically, the AstroPIC program is investigating the impact of a PIC coronagraph on the predicted scientific yield of the upcoming Habitable Worlds Observatory (HWO) mission concept. In this talk, we will present the current status of the AstroPIC design, including the layout of the most recent PIC. We will also present on the status of simulations that predict the performance of the instrument and feed into scientific yield estimations for HWO Exoploratory Analytic Cases (EACs) 1-3. Finally, we will present the status of the development of a PIC testbed at NASA Ames and results from preliminary PIC laboratory testing at Stanford.
Photonics↗
Electroabsorption optical modulator
An electroabsorption modulator that operates based on electroabsorption of a surface plasmon polariton mode is improved by various structural changes and/or selection of different materials. For example, at least a portion of the waveguide may be made to be conductive, e.g., by doping. Also, layers that make up the modulator structure may be placed along sides of waveguides in addition to or instead of simply on the top thereof. High permittivity gate dielectric materials may be employed. Also, materials other than ITO may be employed as a transparent conductor. Such an improved plasmonic electroabsorption modulator can be fabricated using standard semiconductor processing techniques and may be integrated with standard photonic integrated circuits, including silicon photonics and compound semiconductor-based platforms. Advantageously, high-speed, low-voltage operation over a wide spectrum of wavelengths may be achieved.
Wood, Michael↗
Photophysics of Intrinsic Single‐Photon Emitters in Silicon Nitride at Low Temperatures
A robust process for fabricating intrinsic single-photon emitters in silicon nitride is recently established. These emitters show promise for quantum applications due to room-temperature operation and monolithic integration with technologically mature silicon nitride photonics platforms. Here, the fundamental photophysical properties of these emitters are probed through measurements of optical transition wavelengths, linewidths, and photon antibunching as a function of temperature from 4.2 to 300 K. Important insight into the potential for lifetime-limited linewidths is provided through measurements of inhomogeneous and temperature-dependent broadening of the zero-phonon lines. At 4.2 K, spectral diffusion is found to be the main broadening mechanism, while spectroscopy time series reveal zero-phonon lines with instrument-limited linewidths.
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
Defect filtering for thermal expansion induced dislocations in III–V lasers on silicon
Epitaxially integrated III–V semiconductor lasers for silicon photonics have the potential to dramatically transform information networks, but currently, dislocations limit performance and reliability even in defect-tolerant InAs quantum dot (QD)-based lasers. Despite being below the critical thickness, QD layers in these devices contain previously unexplained misfit dislocations, which facilitate non-radiative recombination. We demonstrate here that these misfit dislocations form during post-growth cooldown due to the combined effects of (1) thermal-expansion mismatch between the III–V layers and silicon and (2) mechanical hardening in the active region. By incorporating an additional sub-critical thickness, indium-alloyed “misfit dislocation trapping layer,” we leverage these mechanical hardening effects to our advantage, displacing 95% of misfit dislocations from the QD layer in model structures. Unlike conventional dislocation mitigation strategies, the trapping layer reduces neither the number of threading dislocations nor the number of misfit dislocations. It simply shifts the position of misfit dislocations away from the QD layer, reducing the defects' impact on luminescence. In full lasers, adding a misfit dislocation trapping layer both above and below the QD active region displaces misfit dislocations and substantially improves performance: we measure a twofold reduction in lasing threshold currents and a greater than threefold increase in output power. Overall, our results suggest that devices employing both traditional threading dislocation reduction techniques and optimized misfit dislocation trapping layers may finally lead to fully integrated, commercially viable silicon-based photonic integrated circuits.
36 MATERIALS SCIENCE↗
Improved fabrication of scalable hybrid silicon nitride–thin-film lithium niobate electro-optic modulators
Strategies for improved fabrication of integrated thin-film lithium niobate electro-optic (EO) Mach–Zehnder modulators (MZMs) are reported using scalable processes and designs. The MZM devices utilize direct bonding of unetched and unpatterned thin-film lithium niobate to patterned and planarized silicon photonic microchips. The latter contains silicon nitride waveguide structures of various widths that are used to form hybrid modes that are suitable for high-bandwidth low-voltage EO modulators based on Pockels effect. We report that the incorporation of appropriately designed outgassing channels and certain modifications to key processing steps helped achieve a greater than 99% reduction in void density during bonding. Void reduction is critically important for these traveling-wave hybrid MZM devices in which the optical mode is controllably distributed between multiple thin layers and propagates over millimeter-scale lengths.
Mere, Viphretuo↗
Neuromorphic Photonics Based on Phase Change Materials
Neuromorphic photonics devices based on phase change materials (PCMs) and silicon photonics technology have emerged as promising solutions for addressing the limitations of traditional spiking neural networks in terms of scalability, response delay, and energy consumption. In this review, we provide a comprehensive analysis of various PCMs used in neuromorphic devices, comparing their optical properties and discussing their applications. We explore materials such as GST (Ge 2 Sb 2 Te 5 ), GeTe-Sb 2 Te 3 , GSST (Ge 2 Sb 2 Se 4 Te 1 ), Sb 2 S 3 /Sb 2 Se 3 , Sc 0.2 Sb 2 Te 3 (SST), and In 2 Se 3 , highlighting their advantages and challenges in terms of erasure power consumption, response rate, material lifetime, and on-chip insertion loss. By investigating the integration of different PCMs with silicon-based optoelectronics, this review aims to identify potential breakthroughs in computational performance and scalability of photonic spiking neural networks. Further research and development are essential to optimize these materials and overcome their limitations, paving the way for more efficient and high-performance photonic neuromorphic devices in artificial intelligence and high-performance computing applications.
36 MATERIALS SCIENCE↗
Photonic integration for UV to IR applications
Photonic integration opens the potential to reduce size, power, and cost of applications normally relegated to table- and rack-sized systems. Today, a wide range of precision, high-end, ultra-sensitive, communication and computation, and measurement and scientific applications, including atomic clocks, quantum communications, processing, and high resolution spectroscopy, are ready to make the leap from the lab to the chip. However, many of these applications operate at wavelengths not accessible to the silicon on insulator-based silicon photonics integration platform due to absorption, power handling, unwanted nonlinearities, and other factors. Next generation photonic integration will require ultra-wideband photonic circuit platforms that scale from the ultraviolet to the infrared and that offer a rich set of linear and nonlinear circuit functions as well as low loss and high power handling capabilities. This article provides an assessment of the field in ultra-wideband photonic waveguides to bring power efficient, ultra-high performance systems to the chip-scale and enable compact transformative precision measurement, signal processing, computation, and communication techniques.
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
Integrated photonic encoder for low power and high-speed image processing
Abstract Modern lens designs are capable of resolving greater than 10 gigapixels, while advances in camera frame-rate and hyperspectral imaging have made data acquisition rates of Terapixel/second a real possibility. The main bottlenecks preventing such high data-rate systems are power consumption and data storage. In this work, we show that analog photonic encoders could address this challenge, enabling high-speed image compression using orders-of-magnitude lower power than digital electronics. Our approach relies on a silicon-photonics front-end to compress raw image data, foregoing energy-intensive image conditioning and reducing data storage requirements. The compression scheme uses a passive disordered photonic structure to perform kernel-type random projections of the raw image data with minimal power consumption and low latency. A back-end neural network can then reconstruct the original images with structural similarity exceeding 90%. This scheme has the potential to process data streams exceeding Terapixel/second using less than 100 fJ/pixel, providing a path to ultra-high-resolution data and image acquisition systems.
47 OTHER INSTRUMENTATION↗
Absorption and scattering limits of silicon nitride integrated photonics in the visible spectrum
Visible-light photonic integrated circuits (PICs) promise scalability for technologies such as quantum information, biosensing, and scanning displays, yet extending large-scale silicon photonics to shorter wavelengths has been challenging due to the higher losses. Silicon nitride (SiN) has stood out as the leading platform for visible photonics, but the propagation losses strongly depend on the film’s deposition and fabrication processes. Current loss measurement techniques cannot accurately distinguish between absorption and surface scattering, making it difficult to identify the dominant loss source and reach the platform’s fundamental limit. Here we demonstrate an ultra-low loss, high-confinement SiN platform that approaches the limits of absorption and scattering across the visible spectrum. Leveraging the sensitivity of microresonators to loss, we probe and discriminate each loss contribution with unparalleled sensitivity, and derive their fundamental limits and scaling laws as a function of wavelength, film properties and waveguide parameters. Through the design of the waveguide cross-section, we show how to approach the absorption limit of the platform, and demonstrate the lowest propagation losses in high-confinement SiN to date across the visible spectrum. We envision that our techniques for loss characterization and minimization will contribute to the development of large-scale, dense PICs that redefine the loss limits of integrated platforms across the electromagnetic spectrum.
Corato-Zanarella, Mateus (ORCID:0000000327318046)↗
Hybrid integrated photonic platforms: opinion
While photonic integration has made remarkable progress in recent years, there is no one integrated photonic platform that offers all desired functionalities and manufacturability on the same platform. GaAs and InP-based optoelectronic integrated circuits (OEICs) were very popular in the past decades; however, silicon photonics has recently emerged as a preferred platform due to its high-density and high-yield manufacturability leveraging the CMOS ecosystem, although it lacks optical gain, the Pockels effect, and other characteristics. On the other hand, hybrid photonic integration adds new and diverse functionalities to the host materials like silicon. This opinion paper investigates hybrid integrated photonic platforms, and discusses the new functionalities added to the silicon CMOS photonic platform.
42 ENGINEERING↗
Prospects and applications of on-chip lasers
Abstract Integrated silicon photonics has sparked a significant ramp-up of investment in both academia and industry as a scalable, power-efficient, and eco-friendly solution. At the heart of this platform is the light source, which in itself, has been the focus of research and development extensively. This paper sheds light and conveys our perspective on the current state-of-the-art in different aspects of application-driven on-chip silicon lasers. We tackle this from two perspectives: device-level and system-wide points of view. In the former, the different routes taken in integrating on-chip lasers are explored from different material systems to the chosen integration methodologies. Then, the discussion focus is shifted towards system-wide applications that show great prospects in incorporating photonic integrated circuits (PIC) with on-chip lasers and active devices, namely, optical communications and interconnects, optical phased array-based LiDAR, sensors for chemical and biological analysis, integrated quantum technologies, and finally, optical computing. By leveraging the myriad inherent attractive features of integrated silicon photonics, this paper aims to inspire further development in incorporating PICs with on-chip lasers in, but not limited to, these applications for substantial performance gains, green solutions, and mass production.
Zhou, Zhican↗
CMOS photonic integrated source of broadband polarization-entangled photons
We showcase a fully on-chip CMOS-fabricated silicon photonic integrated circuit employing a bidirectionally pumped microring and polarization splitter-rotators tailored for the generation of broadband (>9 THz), high-fidelity (90–98%) polarization-entangled photons. Spanning the optical C+L-band and producing over 116 frequency-bin pairs on a 38.4-GHz-spaced grid, this source is ideal for flex-grid wavelength-multiplexed entanglement distribution in multiuser networks.
42 ENGINEERING↗
On-chip pulse shaping of entangled photons
The miniaturization of optical systems via integrated photonics is critical to the ultimate scalability and performance of photonic quantum processors, yet many longstanding optical signal processing capabilities—such as Fourier-transform pulse shaping—remain unrealized on chip. In this work, we demonstrate on-chip spectral shaping of entangled photons using a multichannel microring-resonator-based silicon photonic pulse shaper. Achieving line-by-line phase control on a 3 GHz grid for two frequency-bin-entangled qudits, the pulse shaper's fine spectral resolution enables control of nanosecond-scale temporal features, which are observed by direct coincidence detection of biphoton correlation functions that show excellent agreement with theory. This work marks a demonstration of biphoton pulse shaping using an integrated spectral shaper and holds significant promise for applications in photonic quantum information processing.
Entanglement manipulation↗
Foundry-fabricated photonic integrated circuit for flex-grid entanglement distribution
We demonstrate a silicon photonic integrated circuit fabricated through the CMOS manufacturing process, which features a bidirectionally pumped microring to achieve over 116 high-fidelity polarization entangled channels covering the entire optical C+L-band for flex-grid entanglement distribution.
Lukens, Joseph↗