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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 73 records · Page 4
All sourcesNASA NTRSDOE OSTI
NASA NTRS2001

A High-Speed, Event-Driven, Active Pixel Sensor Readout for Photon-Counting Microchannel Plate Detectors

Silicon array readouts for microchannel plate intensifiers offer several attractive features. In this class of detector, the electron cloud output of the MCP intensifier is converted to visible light by a phosphor; that light is then fiber-optically coupled to the silicon array. In photon-counting mode, the resulting light splashes on the silicon array are recognized and centroided to fractional pixel accuracy by off-chip electronics. This process can result in very high (MCP-limited) spatial resolution for the readout while operating at a modest MCP gain (desirable for dynamic range and long term stability). The principal limitation of intensified CCD systems of this type is their severely limited local dynamic range, as accurate photon counting is achieved only if there are not overlapping event splashes within the frame time of the device. This problem can be ameliorated somewhat by processing events only in pre-selected windows of interest or by using an addressable charge injection device (CID) for the readout array. We are currently pursuing the development of an intriguing alternative readout concept based on using an event-driven CMOS Active Pixel Sensor. APS technology permits the incorporation of discriminator circuitry within each pixel. When coupled with suitable CMOS logic outside the array area, the discriminator circuitry can be used to trigger the readout of small sub-array windows only when and where an event splash has been detected, completely eliminating the local dynamic range problem, while achieving a high global count rate capability and maintaining high spatial resolution. We elaborate on this concept and present our progress toward implementing an event-driven APS readout.

Kimble, Randy A.↗
NASA NTRS2002

A High-Speed, Event-Driven, Active Pixel Sensor Readout for Photon-Counting Microchannel Plate Detectors

Silicon array readouts for microchannel plate intensifiers offer several attractive features. In this class of detector, the electron cloud output of the MCP intensifier is converted to visible light by a phosphor; that light is then fiber-optically coupled to the silicon array. In photon-counting mode, the resulting light splashes on the silicon array are recognized and centroided to fractional pixel accuracy by off-chip electronics. This process can result in very high (MCP-limited) spatial resolution while operating at a modest MCP gain (desirable for dynamic range and long term stability). The principal limitation of intensified CCD systems of this type is their severely limited local dynamic range, as accurate photon counting is achieved only if there are not overlapping event splashes within the frame time of the device. This problem can be ameliorated somewhat by processing events only in pre-selected windows of interest of by using an addressable charge injection device (CID) for the readout array. We are currently pursuing the development of an intriguing alternative readout concept based on using an event-driven CMOS Active Pixel Sensor. APS technology permits the incorporation of discriminator circuitry within each pixel. When coupled with suitable CMOS logic outside the array area, the discriminator circuitry can be used to trigger the readout of small sub-array windows only when and where an event splash has been detected, completely eliminating the local dynamic range problem, while achieving a high global count rate capability and maintaining high spatial resolution. We elaborate on this concept and present our progress toward implementing an event-driven APS readout.

Kimble, Randy A.↗
NASA NTRS2016

Ground Calibration of the Silicon Drift Detectors for NICER

The Neutron star Interior Composition ExploreR (NICER) is set to be deployed on the International Space Station (ISS) in early 2017. It will use an array of 56 Silicon Drift Detectors (SDDs) to detect soft X-rays (0.2 - 12 keV) with 100 nanosecond timing resolution. Here we describe the e ort to calibrate the detectors in the lab primarily using a Modulated X-ray Source (MXS). The MXS that was customized for NICER provides more than a dozen emission lines spread over the instrument bandwidth, providing calibration measurements for detector gain and spectral resolution. In addition, the fluorescence source in the MXS was pulsed at high frequency to enable measurement of the delay due to charge collection in the silicon and signal processing in the detector electronics. A second chamber, designed to illuminate detectors with either 55Fe, an optical LED, or neither, provided additional calibration of detector response, optical blocking, and effectiveness of background rejection techniques. The overall ground calibration achieved total operating time that was generally in the range of 500-1500 hours for each of the 56 detectors.

Silicon Drift Detectors↗
NASA NTRS2003

Radiation Tests of the Extravehicular Mobility Unit Space Suit for the International Space Station Using Energetic Protons

Measurements using silicon detectors to characterize the radiation transmitted through the EMU space suit and a human phantom have been performed using 155 and 250 MeV proton beams at LLUMC. The beams simulate radiation encountered in space, where trapped protons having kinetic energies on the order of 100 MeV are copious. Protons with 100 MeV kinetic energy and above can penetrate many centimeters of water or other light materials, so that astronauts exposed to such energetic particles will receive doses to their internal organs. This dose can be enhanced or reduced by shielding - either from the space suit or the self-shielding of the body - but minimization of the risk depends on details of the incident particle flux (in particular the energy spectrum) and on the dose responses of the various critical organs. Data were taken to characterize the beams and to calibrate the detectors using the beam in a treatment room at LLUPTF, in preparation for an experiment with the same beams incident on detectors placed in a human phantom within the EMU suit. Nuclear interactions of high-energy protons in various materials produce a small flux of highly ionizing, low-energy secondary radiation. Secondaries are of interest for their biological effects, since they cause doses and especially dose-equivalents to increase relative to the values expected simply from ionization energy loss along the Bragg curve. Because many secondaries have very short ranges, they are best measured in passive track detectors such as CR-39. The silicon detector data presented here are intended to supplement the CR-39 data in regions where silicon has greater sensitivity, in particular the portion of the LET spectrum below 5 keV/micron. The results obtained in this study suggest that optimizing the radiation shielding properties of space suits is a formidable task. The naive assumption that adding mass can reduce risk is not supported by the data, which show that reducing the dose delivered at or near the skin by low-energy particles may increase the dose delivered by energetic particles to points deeper in the body.

Zeitlin, C.↗
NASA NTRS2009

Development of a Silicon Drift Detector Array: An X-Ray Fluorescence Spectrometer for Remote Surface Mapping

Over the past three years NASA Marshall Space Flight Center has been collaborating with Brookhaven National Laboratory to develop a modular Silicon Drift Detector (SDD) X-Ray Spectrometer (XRS) intended for fine surface mapping of the light elements of the moon. The value of fluorescence spectrometry for surface element mapping is underlined by the fact that the technique has recently been employed by three lunar orbiter missions; Kaguya, Chandrayaan-1, and Chang e. The SDD-XRS instrument we have been developing can operate at a low energy threshold (i.e. is capable of detecting Carbon), comparable energy resolution to Kaguya (<150 eV at 5.9 keV) and an order of magnitude lower power requirement, making much higher sensitivities possible. Furthermore, the intrinsic radiation resistance of the SDD makes it useful even in radiation-harsh environments such as that of Jupiter and its surrounding moons.

Gaskin, Jessica A.↗
DOE OSTI2026

EMPHATIC Silicon Strip Detector Efficiencies

EMPHATIC is an experiment at Fermilab which aims to reduce current neutrino flux uncertainties. This report discusses the limitations current neutrino flux uncertainties places on large scale neutrino experiments, provides background on the EMPHATIC experiment, and details the project of determining the efficiency of the Silicon Strip Detectors (SSDs) used in EMPHATIC. As part of the data analysis process and in order to increase the accuracy of EMPHATIC’s simulations a representation of efficiency of each SSD is required. To achieve this a data-driven analysis was performed on EMPHATIC's collected data using the Root and Art frameworks. Visual and numerical representations of efficiency were determined. The average efficiency over all SSDs is 98.58\%, however this number deflated as it includes known bad channels.

Olson, Virginia [Illinois U., Urbana (main)]↗
DOE OSTI2026

Determining the Efficiency of EMPHATICs Silicon Strip Detectors (SSDs)

EMPHATIC is an experiment at Fermilab which aims to reduce current neutrino flux uncertainties. This report discusses the limitations current neutrino flux uncertainties places on large scale neutrino experiments, provides background on the EMPHATIC experiment, and details the project of determining the efficiency of the Silicon Strip Detectors (SSDs) used in EMPHATIC. As part of the data analysis process and in order to increase the accuracy of EMPHATIC’s simulations a representation of efficiency of each SSD is required. To achieve this a data-driven analysis was performed on EMPHATIC's collected data using the Root and Art frameworks. Visual and numerical representations of efficiency were determined. The average efficiency over all SSDs is 98.58\%, however this number deflated as it includes known bad channels.

Olson, V. [Illinois U., Urbana (main)]↗
NASA NTRS1998

Development of a Broad High-Energy Gamma-Ray Telescope using Silicon Strip Detectors

The research effort has led to the development and demonstration of technology to enable the design and construction of a next-generation high-energy gamma-ray telescope that operates in the pair-production regime (E greater than 10 MeV). In particular, the technology approach developed is based on silicon-strip detector technology. A complete instrument concept based on this technology for the pair-conversion tracker and the use of CsI(T1) crystals for the calorimeter is now the baseline instrument concept for the Gamma-ray Large Area Space Telescope (GLAST) mission. GLAST is NASA's proposed high-energy gamma-ray mission designed to operate in the energy range from 10 MeV to approximately 300 GeV. GLAST, with nearly 100 times the sensitivity of EGRET, operates through pair conversion of gamma-rays and measurement of the direction and energy of the resulting e (+) - e (-) shower. The baseline design, developed with support from NASA includes a charged particle anticoincidence shield, a tracker/converter made of thin sheets of high-Z material interspersed with Si strip detectors, a CsI calorimeter and a programmable data trigger and acquisition system. The telescope is assembled as an array of modules or towers. Each tower contains elements of the tracker, calorimeter, and anticoincidence system. As originally proposed, the telescope design had 49 modules. In the more optimized design that emerged at the end of the grant period the individual modules are larger and the total number in the GLAST array is 25. Also the calorimeter design was advanced substantially to the point that it has a self-contained imaging capability, albeit much cruder than the tracker.

Michelson, Peter F.↗
DOE OSTI2025

Quality concerns caused by quality control — deformation of silicon strip detector modules in thermal cycling tests

The ATLAS experiment at the Large Hadron Collider (LHC) is currently preparing to replace its present Inner Detector (ID) with the upgraded, all-silicon Inner Tracker (ITk) for its High-Luminosity upgrade (HL-LHC). The ITk will consist of a central pixel tracker and the outer strip tracker, consisting of about 19,000 strip detector modules. Each strip module is assembled from up to two sensors, and up to five flexes (depending on its geometry) in a series of gluing, wirebonding and quality control steps. During detector operation, modules will be cooled down to temperatures of about -35 °C (corresponding to the temperature of the support structures on which they will be mounted) after being initially assembled and stored at room temperature. In order to ensure compatibility with the detector's operating temperature range, modules are subjected to thermal cycling as part of their quality control process. Ten cycles between -35 °C and +40 °C are performed for each module, with full electrical characterisation tests at each high and low temperature point. As part of an investigation into the stress experienced by modules during cooling, it was observed that modules generally showed a change in module shape before and after thermal cycling. This paper presents a summary of the discovery and understanding of the observed changes, connecting them with excess module stress, as well as the resulting modifications to the module thermal cycling procedure.

47 OTHER INSTRUMENTATION↗
NASA NTRS2007

A Radiation Dosimeter Concept for the Lunar Surface Environment

A novel silicon detector configuration for radiation dose measurements in an environment where solar energetic particles are of most concern is described. The dosimeter would also measure the dose from galactic cosmic rays. In the lunar environment a large range in particle flux and ionization density must be measured and converted to dose equivalent. This could be accomplished with a thick (e.g. 2mm) silicon detector segmented into cubic volume elements "voxels" followed by a second, thin monolithic silicon detector. The electronics needed to implement this detector concept include analog signal processors (ASIC) and a field programmable gate array (FPGA) for data accumulation and conversion to linear energy transfer (LET) spectra and to dose-equivalent (Sievert). Currently available commercial ASIC's and FPGA's are suitable for implementing the analog and digital systems.

Adams, James H.↗
NASA NTRS2005

Enhanced quantum efficiency of high-purity silicon imaging detectors by ultralow temperature surface modification using Sb doping

A low temperature process for Sb doping of silicon has been developed as a backsurface treatment for high-purity n-type imaging detectors. Molecular beam epitaxy (MBE) is used to achieve very high dopant incorporation in a thin, surface-confined layer. The growth temperature is kept below 450 °C for compatibility with Al-metallized devices. Imaging with MBE-modified 1kx1k charge coupled devices ((CCDs) operated in full depletion has been demonstrated. Dark current is comparable to the state-of-the-art process, which requires a high temperature step. Quantum efficiency is improved, especially in the UV, for thin doped layers placed closer to the backsurface. Near 100% internal quantum efficiency has been demonstrated in the ultraviolet for a CCD with a 1.5 nm silicon cap layer.

Nikzad, Shouleh↗
NASA NTRS2005

Enhanced quantum efficiency of high-purity silicon imaging detectors by ultralow temperature surface modification using Sb doping

A low temperature process for Sb doping of silicon has been developed as a backsurface treatment for high-purity n-type imaging detectors. Molecular beam epitaxy (MBE) is used to achieve very high dopant incorporation in a thin, surface-confined layer. The growth temperature is kept below 450 (deg)C for compatibility with Al-metallized devices. Imaging with MBE-modified 1kx1k charge coupled devices (CCDs) operated in full depletion has been demonstrated. Dark current is comparable to the state-of-the-art process, which requires a high temperature step. Quantum efficiency is improved, especially in the UV, for thin doped layers placed closer to the backsurface. Near 100% internal quantum efficiency has been demonstrated in the ultraviolet for a CCD with a 1.5 nm silicon cap layer.

charged coupled devices (CCDs)↗
DOE OSTI2024

Improved modeling of detector response effects in phonon-based crystal detectors used for dark matter searches

Various dark matter search experiments employ phonon-based crystal detectors operated at cryogenic temperatures. Some of these detectors, including certain silicon detectors used by the SuperCDMS Collaboration, are able to achieve single-charge sensitivity when a voltage bias is applied across the detector. The total amount of phonon energy measured by such a detector is proportional to the number of electron-hole pairs created by the interaction. However, crystal impurities and surface effects can cause propagating charges to either become trapped inside the crystal or create additional unpaired charges, producing non-quantized measured energy as a result. A new analytical model for describing these detector response effects in phonon-based crystal detectors is presented. This model improves upon previous versions by demonstrating how the detector response, and thus the measured energy spectrum, is expected to differ depending on the source of events. Finally, we use this model to extract detector response parameters for SuperCDMS HVeV detectors, and illustrate how this robust modelling can help statistically discriminate between sources of events in order to improve the sensitivity of dark matter search experiments.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
NASA NTRS1987

Silicon radiation detectors with oxide charge state compensation

This paper discusses the use of boron implantation on high resistivity P type silicon before oxide growth to compensate for the presence of charge states in the oxide and oxide/silicon interface. The presence of these charge states on high resistivity P type silicon produces an inversion layer which causes high leakage currents on N(+)P junctions and high surface conductance. Compensating the surface region by boron implantation is shown to result in oxide passivated N(+)P junctions with very low leakage currents and with low surface conductance.

Walton, J. T.↗
NASA NTRS2006

Simultaneous observation of the radiation environment inside and outside the ISS

The low-Earth orbit (LEO) radiation environment has been directly observed by the IV and EV charged particle directional spectrometers (CPDS) aboard the International Space Station (ISS). The EV instrument is mounted on the S0 truss of the ISS and consists of three separate silicon detector telescopes which are oriented in different directions. The IV instrument is a single silicon detector telescope located inside the US Laboratory module of the ISS. We report on the current state of the data analysis for these instruments, which includes the proton and He stopping particle spectra, relative CNO abundances, LET spectra, and measured dose rate as a function of time.

Lee, K. T.↗
NASA NTRS1990

Dual purpose pyrometer for temperature and solidification velocity measurement

A dual purpose pyrometer is described that allows both accurate radiance temperature measurement and fast temporal response. The system uses two silicon photodiodes with separate optical paths derived from a common spot on the sample. The optical bandwidths and response times of each detection circuit are tailored to the function of each radiometer. The radiance temperature of electromagnetically levitated metallic samples is measured over a narrow optical bandwidth with a high-gain silicon detector. The velocity of solidification of undercooled melts can be deduced from the rise time of the second silicon detector which samples a broad optical bandwidth and has a fast response time. Results from experiments on the undercooling and solidification behavior of electromagnetically levitated pure nickel show that the solidification velocity approaches 17 m/s at high undercooling.

Hofmeister, W. H.↗