Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “SiH”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 73 records · Page 4
All sourcesNASA NTRSDOE OSTI
NASA NTRS1990

Hydrogen-silicon carbide interactions

A study of the thermochemistry and kinetics of hydrogen environmental attack of silicon carbide was conducted for temperatures in the range from 1100 C to 1400 C. Thermodynamics maps based on the parameters of pressure and oxygen/moisture content were constructed. With increasing moisture levels, four distinct regions of attack were identified. Each region is defined by the thermodynamically stable solid phases. The theoretically stable solid phases of region 1 are silicon carbide and silicon. Experimental evidence is provided to support this thermodynamic prediction. Silicone carbide is the single stable solid phase in region 2. Active attack of the silicon carbide in this region occurs by the formation of gases of SiO, CO, CH4, SiH4 and SiH. Analyses of the kinetics of reaction for region 2 at 1300 C show the attack of the silicon carbide to be controlled by gas phase diffusion of H2O to the sample. Silicon carbide and silica are the stable phases common to regions 3 and 4. These two regions are characterized by the passive oxidation of silicon carbide and formation of a protective silica layer.

Eckel, Andrew J.↗
NASA NTRS1995

Model atmospheres for M (sub)dwarf stars. 1: The base model grid

We have calculated a grid of more than 700 model atmospheres valid for a wide range of parameters encompassing the coolest known M dwarfs, M subdwarfs, and brown dwarf candidates: 1500 less than or equal to T(sub eff) less than or equal to 4000 K, 3.5 less than or equal to log g less than or equal to 5.5, and -4.0 less than or equal to (M/H) less than or equal to +0.5. Our equation of state includes 105 molecules and up to 27 ionization stages of 39 elements. In the calculations of the base grid of model atmospheres presented here, we include over 300 molecular bands of four molecules (TiO, VO, CaH, FeH) in the JOLA approximation, the water opacity of Ludwig (1971), collision-induced opacities, b-f and f-f atomic processes, as well as about 2 million spectral lines selected from a list with more than 42 million atomic and 24 million molecular (H2, CH, NH, OH, MgH, SiH, C2, CN, CO, SiO) lines. High-resolution synthetic spectra are obtained using an opacity sampling method. The model atmospheres and spectra are calculated with the generalized stellar atmosphere code PHOENIX, assuming LTE, plane-parallel geometry, energy (radiative plus convective) conservation, and hydrostatic equilibrium. The model spectra give close agreement with observations of M dwarfs across a wide spectral range from the blue to the near-IR, with one notable exception: the fit to the water bands. We discuss several practical applications of our model grid, e.g., broadband colors derived from the synthetic spectra. In light of current efforts to identify genuine brown dwarfs, we also show how low-resolution spectra of cool dwarfs vary with surface gravity, and how the high-regulation line profile of the Li I resonance doublet depends on the Li abundance.

Allard, France↗
NASA NTRS1997

Plasma-Sprayed Refractory Oxide Coatings on Silicon-Base Ceramics

Silicon-base ceramics are promising candidate materials for high temperature structural applications such as heat exchangers, gas turbines and advanced internal combustion engines. Composites based on these materials are leading candidates for combustor materials for HSCT gas turbine engines. These materials possess a combination of excellent physical and mechanical properties at high temperatures, for example, high strength, high toughness, high thermal shock resistance, high thermal conductivity, light weight and excellent oxidation resistance. However, environmental durability can be significantly reduced in certain conditions such as when molten salts, H2 or water vapor are present. The oxidation resistance of silicon-base materials is provided by SiO2 protective layer. Molten salt reacts with SiO2 and forms a mixture of SiO2 and liquid silicate at temperatures above 800C. Oxygen diffuses more easily through the chemically altered layer, resulting in a catastrophic degradation of the substrate. SiC and Si3N4 are not stable in pure H2 and decompose to silicon and gaseous species such as CH4, SiH, SiH4, N2, and NH3. Water vapor is known to slightly increase the oxidation rate of SiC and Si3N4. Refractory oxides such as alumina, yttria-stabilized zirconia, yttria and mullite (3Al2O3.2SiO2) possess excellent environmental durability in harsh conditions mentioned above. Therefore, refractory oxide coatings on silicon-base ceramics can substantially improve the environmental durability of these materials by acting as a chemical reaction barrier. These oxide coatings can also serve as a thermal barrier. The purpose of this research program has been to develop refractory oxide chemical/thermal barrier coatings on silicon-base ceramics to provide extended temperature range and lifetime to these materials in harsh environments.

Tewari, Surendra↗
NASA NTRS2001

Consideration of Moving Tooth Load in Gear Crack Propagation Predictions

Robust gear designs consider not only crack initiation, but crack propagation trajectories for a fail-safe design. In actual gear operation, the magnitude as well as the position of the force changes as the gear rotates through the mesh. A study to determine the effect of moving gear tooth load on crack propagation predictions was performed. Two-dimensional analysis of an involute spur gear and three-dimensional analysis of a spiral-bevel pinion gear using the finite element method and boundary element method were studied and compared to experiments. A modified theory for predicting gear crack propagation paths based on the criteria of Erdogan and Sih was investigated. Crack simulation based on calculated stress intensity factors and mixed mode crack angle prediction techniques using a simple static analysis in which the tooth load was located at the highest point of single tooth contact was validated. For three-dimensional analysis, however, the analysis was valid only as long as the crack did not approach the contact region on the tooth.

Lewicki, David G.↗
NASA NTRS2002

A Desorbed Gas Molecular Ionization Mechanism for Arcing Onset in Solar Arrays Immersed in a Low-Density Plasma

Previous experimental studies have hypothesized that the onset of Solar Array Arc (SAA) initiation in low-density space plasmas is caused by a desorbed gas molecular ionization mechanism. Indeed past investigations performed at the NASA Glenn Plasma Interaction Facility tend to not only support the desorbed gas molecular ionization mechanism, but have gone as far as identifying the crucial molecular species that must be present for molecular ion dominated process to occur. When electrical breakdown occurs at a triple junction site on a solar array panel, a quasi-neutral plasma cloud is ejected. Assuming the main component of the expelled plasma cloud by weight is due to water vapor, the fastest process available is due to HO molecules and OH(+) ions, or more succinctly, dissociative molecular-ion dominated recombination processes: H2O(+) + e(-) yields H* + OH*. Recently published spectroscopic observations of solar array arc spectra in ground tests have revealed the well-known molecular OH band (302 to 309nm), as well as the molecular SiH band (387nm peak), and the molecular CH band (432nm peak). Note that the OH band is observed in emission arcs where water vapor is present. Strong atomic lines were also observed for H(sub beta) at 486nm and H(sub alpha) at 656.3nm in prior ground testing. Independent supporting evidence of desorbed gas molecular ionization mechanisms also come from measurements of arc current pulse widths at different capacitances. We will revisit an earlier first order approximation demonstrating the dependence of arc current pulse widths on the square root of the capacitance. The simple arc current pulse width model will be then be used to estimate the temperature of the arc plasma (currently believed to be somewhere in the range of 3 to 5 eV). The current paper then seeks to extend the outlined work by including numerous vacuum chamber measurements obtained with a quadrupole mass spectrometer. A small solar array was mounted inside the vacuum chamber. A plasma source, also mounted inside the vacuum chamber, is used to simulate a low-density plasma environment. The solar array is then biased to a high negative potential and allowed to arc while a mass spectrometer is used to record the partial pressure of H2O and to track other significant changes in mass (1 to 150) AMU.

Galofaro, J.↗
NASA NTRS2002

The Neutral Gas Desorption and Breakdown on a Metal-Dielectric Junction Immersed in a Plasma

New results are presented of an experimental study and theoretical analysis of arcing on metal-dielectric junctions immersed in a low-density plasma. Two samples of conventional solar arrays have been used to investigate the effects of arcing within a wide range of neutral gas pressures, ion currents, and electron number densities. All data (except video) were obtained in digital form that allowed us to study the correlation between external parameters (plasma density, additional capacitance, bias voltage, etc) and arc characteristics (arc rate, arc current pulse width and amplitude, gas species partial pressures, intensities of spectral lines, and so on). Arc sites were determined by employing a video-camera, and it is shown that the most probable sites for arc inception are trip le-junctions, even though some arcs were initiated in gaps between cells. The effect of surface conditioning (decrease of arc rate due to outgassing) was clearly demonstrated. Moreover, a considerable increase in arc rate due to absorption of molecules from atmospheric air has been confirmed. The analysis of optical spectra (240-800 nm) reveals intense narrow atomic lines (Ag, H) and wide molecular bands (OH, CH, SiH, SiN) that confirm a complicated mechanism of arc plasma generation. The rate of plasma contamination due to arcing was measured by employing a mass-spectrometer. These measurements provided quite reliable data for the development of a theoretical model of plasma contamination, In conclusion, the arc threshold was increased to above 350 V (from 190 V) by keeping a sample in vacuum (20 micronTorr) for seven days. The results obtained are important for the understanding of the arc inception mechanism, which is absolutely essential for progress toward the design of high voltage solar arrays for space applications.

Vayner, Boris↗
NASA NTRS2003

Solar Array in Simulated LEO Plasma Environment

Six different types of solar arrays have been tested in large vacuum chambers. The low earth orbit plasma environment was simulated in plasma vacuum chambers, where the parameters could be controlled precisely. Diagnostic equipment included spherical Langmuir probes, mass spectrometer, low-noise CCD camera with optical spectrometer, video camera, very sensitive current probe to measure arc current, and a voltage probe to register variations in a conductor potential. All data (except video) were obtained in digital form that allowed us to study the correlation between external parameters (plasma density, additional capacitance, bias voltage, etc) and arc characteristics (arc rate, arc current pulse width and amplitude, gas species partial pressures, and intensities of spectral lines). Arc inception voltages, arc rates, and current selections are measured for samples with different coverglass materials and thickness, interconnect designs, and cell sizes. It is shown that the array with wrapthrough interconnects have the highest arc threshold and the lowest current collection. Coverglass design with overhang results in decrease of current collection and increase of arc threshold. Doubling coverglass thickness cases the increase in arc inception voltage. Both arc inception voltage and current collection increase significantly with increasing a sample temperature to 80 C. Sustained discharges are initiated between adjacent cells with potential differences of 40 V for the sample with 300 micron coverglass thickness and 60 V for the sample with 150 micron coverglass thickness. Installation of cryogenic pump in large vacuum chamber provided the possibility of considerable outgassing of array surfaces which resulted in significant decrease of arc rate. Arc sites were determined by employing a video-camera, and it is shown that the most probable sites for arc inception are triple-junctions, even though some arcs were initiated in gaps between cells. It is also shown that the arc rate increases with increasing of ion collection current. The analysis of optical spectra (240-800 nm) reveals intensive narrow atomic lines (Ag, H) and wide molecular bands (OH, CH, SiH, SiN) that confirms a complicated mechanism of arc plasma generation. The results obtained seem to be important for the understanding of the arc inception mechanism, which is absolutely essential for progress toward the design of high-voltage solar array for space application.

Vayner, Boris↗
NASA NTRS2004

Solar Array in Simulated LEO Plasma Environment

Six different types of solar arrays have been tested in large vacuum chambers. The low Earth orbit plasma environment was simulated in plasma vacuum chambers, where the parameters could be controlled precisely. Diagnostic equipment included spherical Langmuir probes, mass spectrometer, low-noise CCD camera with optical spectrometer, video camera, very sensitive current probe to measure arc current, and a voltage probe to register variations in a conductor potential. All data (except video) were obtained in digital form that allowed us to study the correlation between external parameters (plasma density, additional capacitance, bias voltage, etc) and arc characteristics (arc rate, arc current pulse width and amplitude, gas species partial pressures, and intensities of spectral lines). Arc inception voltages, arc rates, and current collections are measured for samples with different coverglass materials and thickness, interconnect designs, and cell sizes. It is shown that the array with wrapthrough interconnects have the highest arc threshold and the lowest current collection. Coverglass design with overhang results in decrease of current collection and increase of arc threshold. Doubling coverglass thickness causes the increase in arc inception voltage. Both arc inception voltage and current collection increase significantly with increasing a sample temperature to 80 C. Sustained discharges are initiated between adjacent cells with potential differences of 40 V for the sample with 300 m coverglass thickness and 60 V for the sample with 150 m coverglass thickness. Installation of cryogenic pump in large vacuum chamber provided the possibility of considerable outgassing of array surfaces which resulted in significant decrease of arc rate. Arc sites were determined by employing a video-camera, and it is shown that the most probable sites for arc inception are triple-junctions, even though some arcs were initiated in gaps between cells. It is also shown that the arc rate increases with increasing of ion collection current. The analysis of optical spectra (240-800 nm) reveals intensive narrow atomic lines (Ag, H) and wide molecular bands (OH, CH, SiH, SiN) that confirms a complicated mechanism of arc plasma generation. The results obtained seem to be important for the understanding of the arc inception mechanism, which is absolutely essential for progress toward the design of high-voltage solar array for space application.

Vayner, Boris↗
DOE OSTI2020

Flammable Gas Generation and Control at the Idaho Completion Project Legacy Combustible Gas Generation - 20191

On April 11, 2018, four drums containing transuranic waste at the Idaho National Laboratory underwent over-pressurization, ejecting their lids and spreading radiological waste within a facility. An investigation has found that waste in the drums generated methane gas, which contributed to the event. Subsequent to the investigation, the potential for drums to have methane and other flammable analytes whose concentrations could approach or exceed the lower flammability limit (LFL) and the adequacy of the controls to prevent or mitigate a possible deflagration was evaluated. An extensive review of the historical records was performed to determine how many drums exceed the LFL. The historical record identified a small quantity of drums that exceeded the LFL for xylene, hydrogen, and methane. The primary codified applicable code or standard for handling drums is 29 CFR 1910.120 (j) 'Handling Drums and Containers.' It is used throughout the commercial and government sector. This code is integrated throughout the Fluor Idaho safety management programs and procedures to control the Standard Industrial Hazards (SIHs) associated with drum and container handling. Example requirements include: - Drums and containers are inspected, and their integrity assured prior to being moved. - Site operations are organized to minimize the amount of drum or container movement. - When there is a reasonable possibility of flammable atmospheres being present, material handling equipment and hand tools are of the type to prevent sources of ignition. Drums and containers under pressure, as evidenced by bulging or swelling, are not moved until the cause for excess pressure is determined and appropriate containment procedures have been implemented to protect employees from explosive relief of the drum. Drums which exceed the WIPP FGA limit have NCRs associated with them. Once a drum fails flammable gas sampling, an NCR is initiated. The NCR drives placement into NCR dense pack rows. A standing order drives placement of the FGA failures to a single planer segregation location. These drums are not allowed for further processing or shipment until the NCR has been cleared. Once in the single planer rows, follow-up FGA testing is performed by CCP. The NCR is dispositioned by follow-up sampling occurring after adequate time has been provided for the gas to diffuse through the filter assembly, or, in some cases, the drums are repackaged into additional drums to reduce the source term. To date, the ICP project has performed approximately 1.5 million drums moves without a deflagration event due to combustible gas generation. Flammable gas generation in a transuranic waste drum is not unique to the ICP but is common across the DOE complex. Based on the experience at Idaho, application of industry standards is sufficient to control the risk of drum deflagration due to drum movements. (authors)

12 MANAGEMENT OF RADIOACTIVE AND NON-RADIOACTIVE W↗
DOE OSTI2023

Measurement of optically-pumped electron spin polarization in n-GaAs at high external electric fields

We use the technique of time-resolved Kerr rotation (TRKR) to measure the electron spin polarization generated by optical spin pumping in an n-type gallium arsenide (GaAs) epilayer when an external electric field is simultaneously applied on the sample. The drift of the electron spins under the influence of the external electric field is captured with spatial scans of the pump–probe separation. A significant decay in the magnitude of electron spin polarization with electric field is observed and is attributed to the increased inhomogeneous broadening caused by the field-induced drift and the hot electron effects. Here, we extend the electric field range to as high as the Gunn threshold field in the measurement and we do not observe a spin amplification effect due to the spin Gunn effect under our experimental scheme.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Gunn threshold voltage characterization in GaAs devices with wedge-shaped tapering

Here, we fabricate gallium arsenide-based devices with a wedge-shaped tapering region connected to a rectangular-shaped region and measure the threshold voltage required to trigger the Gunn effect. The threshold voltage reduction is attributed to the focusing of the electric field toward the narrower end of the device and is effective when the device has a steep enough tapering. We also model the electric field profile for the tapered devices using an intuitive graphical approach and the finite element method and provide estimates for the threshold voltages of tapered devices. Finally, we compare the estimates to the measured values and provide possible reasons for the discrepancies. We believe the capability of threshold voltage reduction with the wedge-shaped tapering design could be useful in device applications.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2021

Illumination-induced modulation of conductivity and Gunn oscillation properties in epitaxial GaAs

In this work, we illuminate a gallium arsenide (GaAs) Gunn device and study the light-induced changes of Gunn oscillation properties. We observe that illumination leads to the modulation of the Gunn threshold voltage, the Gunn oscillation magnitude, and the coherency of Gunn oscillation, with the nature of the modulation being closely related to the position of illumination on the device. These effects are attributed to the generation of optically excited carriers, which results in the modulation of conductivity and the electric field profile along the device. The finite element method is used to simulate the change of the field profile of the Gunn device caused by illumination. We also report an unexpected phenomenon of Gunn oscillation property manipulation with an optical chopper. In addition, wavelength-dependent, power-dependent, and pulsed illumination measurements are performed to help with further understanding the observations.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2020

Electrical control of spin relaxation anisotropy during drift transport in a two-dimensional electron gas

Spin relaxation was studied in a two-dimensional electron gas confined in a wide GaAs quantum well. Recently, the control of the spin relaxation anisotropy by diffusive motion was first shown in D. Iizasa et al., arXiv:2006.08253. Here, we demonstrate electrical control by drift transport in a system with two subbands occupied. The combined effect of in-plane and gate voltages was investigated using time-resolved Kerr rotation. Furthermore, the measured relaxation time presents strong anisotropy with respect to the transport direction. For an in-plane accelerating electric field along [110], the lifetime was strongly suppressed irrespective of the applied gate voltage. Remarkably, for transport along [$1\bara{1}0$], the data shows spin lifetime that was gate dependent and longer than in the [110] direction regardless of the in-plane voltage. In agreement, independent results of anisotropic spin precession frequencies are also presented. Nevertheless, the long spin lifetime, strong anisotropy and drift response seen in the data are beyond the existing models for spin drift and diffusion.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Spatially-resolved measurements of spin valley polarization in MOCVD-grown monolayer WSe 2

Time-resolved Kerr rotation microscopy is used to generate and measure spin valley polarization in MOCVD-grown monolayer tungsten diselenide (WSe 2 ). The Kerr signal reveals bi-exponential decay with time constants of 100 ps and 3 ns. Measurements are performed on several triangular flakes from the same growth cycle and reveal larger spin valley polarization near the edges of the flakes. This spatial dependence is observed across multiple WSe 2 flakes in the Kerr rotation measurements but not in the spatially resolved reflectivity or microphotoluminescence data. Time-resolved pump-probe overlap measurements further reveal that the Kerr signal’s spatial dependence is not due to spin diffusion on the nanosecond timescale.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2024

Electron Spin Polarization in Large Electric Fields

This project investigated the effects of large electric fields on electron spin polarization in semiconductors, which is of interest for spin-based electronics (“spintronics”) and quantum information processing. It has been theoretically proposed that large electric fields could potentially preserve or amplify electron spin polarization, which would make it easier to generate, transport, and detect spin polarization in spin-based devices; however, previous measurements had not measured the response of electron spin polarization at large electric fields. During this project, methods to perform measurements of electron spin polarization at large electric fields were developed and performed using ultrafast time- and spatially-resolved magneto-optical spectroscopy, high-voltage pulses, and lock-in detection. The device geometry was engineered to reduce the threshold voltage required to reach the Gunn threshold, and the effect of optical illumination on the sample conductivity and Gunn oscillations was investigated. Electron spin polarization measurements were performed at electric fields up to and beyond the Gunn threshold for the device. The measurements showed that the electron spin polarization magnitude decreased with increasing electric field in the devices measured, and a spin amplification effect was not observed. However, these effects could potentially exist in a different material or in a material with a different doping concentration or in a different device geometry.

36 MATERIALS SCIENCE↗
NASA NTRS1964

Stress analysis of cracks

Elastic stress analyses of cracked bodies represented by stress intensity factor method - fracture mechanics

STRESS ANALYSIS↗