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NASA NTRSDate not supplied

Pt/HTCC Alumina based Electronic Packaging System and Integration Processes for High Temperature Harsh Environment Applications

Electronic devices capable of operation at 500°C are required for long term Venus surface missions, as well as for in situ monitoring and control of next generation aeronautical engines. High temperature sensors and electronics can also find many applications in military, and energy and automobile industries. Various silicon carbide (SiC) sensors and electronic devices have been developed for operation at 500 °C, and a compatible packaging system is needed for long term test and deployment of these high temperature devices. High temperature co-fired ceramics (HTCC) alumina with platinum (Pt) conductor was proposed for high temperature electronic packaging. A prototype Pt/HTCC alumina packaging system including chip-level package and circuit board has been briefly reported previously for long-term electrical testing of SiC integrated circuits at 500 °C, and brief testing at much higher temperatures. HTCC alumina is an excellent dielectric material with acceptable dielectric constant and low dielectric loss over wide temperature and frequency ranges. Pt is chemically noble and can be co-fired with HTCC alumina in air ambient producing a viable electronic packaging material system for high temperature applications. This paper presents a more detailed description of this packaging system including prototype low power packages and circuit boards based on HTCC alumina and Pt metallization for 500°C and other harsh environment applications. The key technical considerations for chip-level packaging and circuit board assembly, including materials and processes for 500 °C durable wire-bonding and SiC die attach, and integration of multi-chip circuit boards, are presented. Experimental test results of this packaging approach applied to SiC integrated circuits at 500 °C and 700°C are discussed as well.

High temperature↗

NASA NTRSDate not supplied

Pt/HTCC Alumina based Electronic Packaging System and Integration Processes for High Temperature Harsh Environment Applications

electronic packaging↗

NASA NTRS2001

Characterization and In-Situ Monitoring of ZnSe Crystal Growth by Seeded PVT for Microgravity Applications

Crystal growth from the vapor phase continues to play a significant role in the production of II-VI semiconductor compounds (ZnO, ZnTe, CdTe, etc.) and SiC. As compared to melt growth methods (where available) the advantages are: (1) lower growth temperature(s); (2) reduction in defect concentration; (3) additional purification; and (4) enhanced crystal perfection. A powerful tool in determining the mechanism of PVT is microgravity. Under normal gravity conditions the transport mechanism is a superposition of diffusive and convective fluxes. Microgravity offers the possibility of studying the transport properties without the influence of convective effects. Research on the crystal growth of ZnSe by PVT (P.I.: Su of NASA/MSFC) will help to clarify the effects of convection on crystal growth. A crystal growth furnace with in-situ and real time optical monitoring capabilities was constructed and used to monitor the vapor composition and growing crystal surface morphology during the PVT growth of ZnSe. Using photoluminescence and SIMS, ex-situ, the incorporation of point defects (Zn vacancy) and impurities was found to be correlated to the gravity vector due to the influence of the convective flow. A summary of the results to date will be presented.

Feth, Shari T.↗

DOE OSTI2022

Designing silicon carbide heterostructures for quantum information science: challenges and opportunities

Abstract Silicon carbide (SiC) can be synthesized in a number of different structural forms known as polytypes with a vast array of optically active point defects of interest for quantum information sciences. The ability to control and vary the polytypes during SiC synthesis may offer a powerful methodology for the formation of new material architectures that expand our ability to manipulate these defects, including extending coherence lifetimes and enhancing room temperature operation. Polytypic control during synthesis presents a significant challenge given the extreme conditions under which SiC is typically grown and the number of factors that can influence polytype selection. In situ monitoring of the synthesis process could significantly expand our ability to formulate novel polytype structures. In this perspective, we outline the state of the art and ongoing challenges for precision synthesis in SiC. We discuss available in situ x-ray characterization methods that will be instrumental in understanding the atomic scale growth of SiC and defect formation mechanisms. We highlight optimistic use cases for SiC heterostructures that will become possible with in situ polytypic control and end by discussing extended opportunities for integration of ultrahigh quality SiC materials with other semiconductor and quantum materials.

Harmon, K. J. (ORCID:0000000164277971)↗

NASA NTRS2001

Stress-Rupture and Stress-Relaxation of SiC/SiC Composites at Intermediate Temperature

Tensile static stress and static strain experiments were performed on woven Sylramic (Dow Corning, Midland, MI) and Hi-Nicalon (Nippon Carbon, Japan) fiber reinforced, BN interphase, melt-infiltrated SiC matrix composites at 815 C. Acoustic emission was used to monitor the damage accumulation during the test. The stress-rupture properties of Sylramic composites were superior to that of Hi-Nicalon Tm composites. Conversely, the applied strain levels that Hi-Nicalon composites can withstand for stress-relaxation experiments were superior to Sylramic composites; however, at a cost of poor retained strength properties for Hi-Nicalon composites. Sylramic composites exhibited much less stress-oxidation induced matrix cracking compared to Hi-Nicalon composites. This was attributed to the greater stiffness and roughness of Sylramic fibers themselves and the lack of a carbon layer between the fiber and the BN interphase for Sylramic composites, which existed in Hi-Nicalon composites. Due to the lack of stress-relief for Sylramic composites, time to failure for Sylramic composite stress-relaxation experiments was not much longer than for stress-rupture experiments when comparing the peak stress condition for stress-relaxation with the applied stress of stress-rupture.

Morscher, Gregory N.↗

NASA NTRS1988

Dynamic fracture toughness of ceramic composites

The dynamic fracture toughness vs crack velocity relationships of TiB2 particulate-reinforced SiC-matrix and SiC whisker-reinforced Al2O3-matrix composites were determined at both room temperature and 1200 C with impacted, single-edge notched three-point bend specimens. Rapid crack initiation and propagation were monitored by a laser interferometric-displacement gage system. A FEM model that transmitted the measured outside-impact load to the specimen within the furnace was used to characterize the entire loading system-specimen unit. Small differences were measured between the room temperature and 1200 C dynamic responses.

Yang, K. H.↗

NASA NTRS1998

The Evolution of Interfacial Sliding Stresses During Cyclic Push-in Testing of C- and BN-Coated Hi-Nicalon Fiber-Reinforced CMCs

Interfacial debond cracks and fiber/matrix sliding stresses in ceramic matrix composites (CMCs) can evolve under cyclic fatigue conditions as well as with changes in the environment, strongly affecting the crack growth behavior, and therefore, the useful service lifetime of the composite. In this study, room temperature cyclic fiber push-in testing was applied to monitor the evolution of frictional sliding stresses and fiber sliding distances with continued cycling in both C- and BN-coated Hi-Nicalon SiC fiber-reinforced CMCs. A SiC matrix composite reinforced with C-coated Hi-Nical on fibers as well as barium strontium aluminosilicate (BSAS) matrix composites reinforced with BN-coated (four different deposition processes compared) Hi-Nicalon fibers were examined. For failure at a C interface, test results indicated progressive increases in fiber sliding distances during cycling in room air but not in nitrogen. These results suggest the presence of moisture will promote crack growth when interfacial failure occurs at a C interface. While short-term testing environmental effects were not apparent for failure at the BN interfaces, long-term exposure of partially debonded BN-coated fibers to humid air resulted in large increases in fiber sliding distances and decreases in interfacial sliding stresses for all the BN coatings, presumably due to moisture attack. A wide variation was observed in debond and frictional sliding stresses among the different BN coatings.

Eldridge, J. I.↗

NASA NTRS2002

Acoustic Emission and Damage Accumulation for Various Woven C/SiC Composites Tested in Tension at Room Temperature

Modal acoustic emission (AE) has proven to be an excellent technique to monitor damage accumulation in ceramic matrix composites. In this study, AE was used to monitor tensile load-unload-reload hysteresis tests for a variety of C fiber reinforced, SiC matrix composites. C/SiC composites were reinforced with T300 and IM7 fibers, had C, multilayer, or pseudo-porous C interphases, and had chemical vapor infiltrated SiC or melt-infiltrated SiC matrices. All of the composites exhibited considerable AE during testing. The extent and nature of the AE activity will be analyzed and discussed in light of matrix cracking and the variety of composite constituents. It is hoped that understanding the nature of stress dependent damage accumulation in these materials can be of use in life modeling for these types of composites.

Morscher, Gregory N.↗

NASA NTRS2002

Acoustic Emission and Damage Accumulation for Various Woven C/SiC Composites Tested in Tension at Room Temperature

Modal acoustic emission (AE) has proven to be an excellent technique to monitor damage accumulation in ceramic matrix composites. In this study, AE was used to monitor tensile load-unload-reload hysteresis tests for a variety of C fiber reinforced, Sic matrix composites. C/SiC composites were reinforced with T-300 and IM7 fibers, had C, multilayer, or pseudo-porous C interphases, and had chemical vapor infiltrated Sic or melt-infiltrated SiC matrices. All of the composites exhibited considerable AE during testing. The extent and nature of the AE activity will be analyzed and discussed in light of matrix cracking and the variety of composite constituents. It is hoped that understanding the nature of stress-dependent damage accumulation in these materials can be of use in life-modeling for these types of composites.

Morscher, Gregory↗

DOE OSTI2022

Large-Scale Additive Manufacturing of Silicon Carbide with Process Monitoring

This report summarizes new capabilities in additive manufacturing (AM) of large-scale silicon carbide (SiC) components under the Advanced Materials and Manufacturing Technologies (AMMT) program. SiC is a promising material that is being considered for many advanced reactor designs due to its high temperature strength, radiation tolerance, minimal neutron absorption, and oxidation resistance [1-8]. One of the primary limitations to using SiC as an in-core structural material is the inability to fabricate large SiC components with complex geometries. While under the former Transformational Challenge Reactor (TCR) program, ceramic AM systems at the Oak Ridge National Laboratory (ORNL) were limited in the quantity and overall size achievable for producing ceramic AM components. To address this, ORNL has improved its infrastructure for binder jet and chemical vapor infiltration (CVI) processes with cutting-edge equipment coming online in a newly renovated laboratory space capable of producing larger components and higher throughput without compromise on part size. This report details the laboratory renovation progress, focusing specifically on the DesktopMetal (formerly ExOne) X25Pro binder jet, a large scale CVI furnace, and the added functionality of a software tool called Peregrine for quality assurance and control purposes.

36 MATERIALS SCIENCE↗

NASA NTRS1999

Intermediate Temperature Stress Rupture of a Woven Hi-Nicalon, BN-Interphase, SiC Matric Composite in Air

Woven Hi-Nicalon (TM) reinforced melt-infiltrated SiC matrix composites were tested under tensile stress-rupture conditions in air at intermediate temperatures. A comprehensive examination of the damage state and the fiber properties at failure was performed. Modal acoustic emission analysis was used to monitor damage during the experiment. Extensive microscopy of the composite fracture surfaces and the individual fiber fracture surfaces was used to determine the mechanisms leading to ultimate failure. The rupture properties of these composites were significantly worse than expected compared to the fiber properties under similar conditions. This was due to the oxidation of the BN interphase. Oxidation occurred through the matrix cracks that intersected the surface or edge of a tensile bar. These oxidation reactions resulted in minor degradation to fiber strength and strong bonding of the fibers to one another at regions of near fiber-to-fiber contact. It was found that two regimes for rupture exist for this material: a high stress regime where rupture occurs at a fast rate and a low stress regime where rupture occurs at a slower rate. For the high stress regime, the matrix damage state consisted of through thickness cracks. The average fracture strength of fibers that were pulled-out (the final fibers to break before ultimate failure) was controlled by the slow-crack growth rupture criterion in the literature for individual Hi-Nicalon (TM) fibers. For the low stress regime, the matrix damage state consisted of microcracks which grew during the rupture test. The average fracture strength of fibers that were pulled-out in this regime was the same as the average fracture strength of individual fibers pulled out in as-produced composites tested at room temperature.

Morscher, Gregory N.↗

NASA NTRS2005

Pd/CeO2/SiC Chemical Sensors

The incorporation of nanostructured interfacial layers of CeO2 has been proposed to enhance the performances of Pd/SiC Schottky diodes used to sense hydrogen and hydrocarbons at high temperatures. If successful, this development could prove beneficial in numerous applications in which there are requirements to sense hydrogen and hydrocarbons at high temperatures: examples include monitoring of exhaust gases from engines and detecting fires. Sensitivity and thermal stability are major considerations affecting the development of high-temperature chemical sensors. In the case of a metal/SiC Schottky diode for a number of metals, the SiC becomes more chemically active in the presence of the thin metal film on the SiC surface at high temperature. This increase in chemical reactivity causes changes in chemical composition and structure of the metal/SiC interface. The practical effect of the changes is to alter the electronic and other properties of the device in such a manner as to degrade its performance as a chemical sensor. To delay or prevent these changes, it is necessary to limit operation to a temperature <450 C for these sensor structures. The present proposal to incorporate interfacial CeO2 films is based partly on the observation that nanostructured materials in general have potentially useful electrical properties, including an ability to enhance the transfer of electrons. In particular, nanostructured CeO2, that is CeO2 with nanosized grains, has shown promise for incorporation into hightemperature electronic devices. Nanostructured CeO2 films can be formed on SiC and have been shown to exhibit high thermal stability on SiC, characterized by the ability to withstand temperatures somewhat greater than 700 C for limited times. The exchanges of oxygen between CeO2 and SiC prevent the formation of carbon and other chemical species that are unfavorable for operation of a SiC-based Schottky diode as a chemical sensor. Consequently, it is anticipated that in a Pd/CeO2/SiC Schottky diode, the nanostructured interfacial CeO2 layer would contribute to thermal stability and, by contributing to transfer of electrons, would also contribute to sensitivity.

Lu, Weijie↗

NASA NTRS2004

Effect of Specimen Thickness on Mechanical Behavior of SiC/SiC Composites

Potential composite applications in aerospace and transportation application systems have different thickness requirements. For example, space applications such as nozzle ramps or heat exchangers use very thin (less than 1 mm) structures whereas turbine blades need very thick parts greater than or equal to cm). There has been little investigation into the effect of thickness on stress-strain behavior or elevated temperature tensile properties controlled by oxidation. In this study, composites consisting of woven Hi-NicalonTM fibers, a carbon interphase, and CVI Sic matrix were fabricated with different numbers of plies to provide variable thickness. The composites ranged from a single ply (approximately 0.4 mm) to thirty-six plies (approximately 1 cm). Tensile tests were performed at room temperature with acoustic emission used to monitor matrix crack behavior. Elevated temperature tensile stress-rupture tests were performed in air. Considerably different room and elevated temperature tensile behavior was observed that will be discussed with respect to the effect of thickness on matrix crack formation, matrix crack growth and oxidation diffusion kinetics.

Morscher, Gregory N.↗

NASA NTRS1992

Damage mechanisms in three-dimensional woven reinforced ceramic matrix composites under tensile and flexural loading at room and elevated temperatures

Three-dimensional Nicalon SiC/SiC matrix composites made through a chemical vapor infiltration process were studied under tensile and flexural loading at 23, 1200, and 1550 C in air. In situ damage accumulation monitoring NDE techniques were utilized to identify failure mechanisms in these materials. The effectiveness and durability of a chemical vapor deposition SiC surface coating were also evaluated in severe oxidizing environment. Results show that the failure response was very similar for the 23 and 1200 C specimens, while at 1550 C there were significant changes in both the composite mechanical behavior and the matrix microstructure. Extensive fiber pull-out was observed only in the 1550 C specimen. It is also found that the SiC surface coating can protect the composite up to the critical matrix cracking strength.

Chulya, Abhisak↗

NASA NTRS2012

Alumina Based 500 C Electronic Packaging Systems and Future Development

NASA space and aeronautical missions for probing the inner solar planets as well as for in situ monitoring and control of next-generation aeronautical engines require high-temperature environment operable sensors and electronics. A 96% aluminum oxide and Au thick-film metallization based packaging system including chip-level packages, printed circuit board, and edge-connector is in development for high temperature SiC electronics. An electronic packaging system based on this material system was successfully tested and demonstrated with SiC electronics at 500 C for over 10,000 hours in laboratory conditions previously. In addition to the tests in laboratory environments, this packaging system has more recently been tested with a SiC junction field effect transistor (JFET) on low earth orbit through the NASA Materials on the International Space Station Experiment 7 (MISSE7). A SiC JFET with a packaging system composed of a 96% alumina chip-level package and an alumina printed circuit board mounted on a data acquisition circuit board was launched as a part of the MISSE7 suite to International Space Station via a Shuttle mission and tested on the orbit for eighteen months. A summary of results of tests in both laboratory and space environments will be presented. The future development of alumina based high temperature packaging using co-fired material systems for improved performance at high temperature and more feasible mass production will also be discussed.

Chen, Liang-Yu↗

NASA NTRS1991

Silicon carbide, an emerging high temperature semiconductor

In recent years, the aerospace propulsion and space power communities have expressed a growing need for electronic devices that are capable of sustained high temperature operation. Applications for high temperature electronic devices include development instrumentation within engines, engine control, and condition monitoring systems, and power conditioning and control systems for space platforms and satellites. Other earth-based applications include deep-well drilling instrumentation, nuclear reactor instrumentation and control, and automotive sensors. To meet the needs of these applications, the High Temperature Electronics Program at the Lewis Research Center is developing silicon carbide (SiC) as a high temperature semiconductor material. Research is focussed on developing the crystal growth, characterization, and device fabrication technologies necessary to produce a family of silicon carbide electronic devices and integrated sensors. The progress made in developing silicon carbide is presented, and the challenges that lie ahead are discussed.

Matus, Lawrence G.↗

NASA NTRS2016

Demonstration of a Packaged Capacitive Pressure Sensor System Suitable for Jet Turbofan Engine Health Monitoring

In this paper, the development and characterization of a packaged pressure sensor system suitable for jet engine health monitoring is demonstrated. The sensing system operates from 97 to 117 MHz over a pressure range from 0 to 350 psi and a temperature range from 25 to 500 deg. The sensing system consists of a Clapp-type oscillator that is fabricated on an alumina substrate and is comprised of a Cree SiC MESFET, MIM capacitors, a wire-wound inductor, chip resistors and a SiCN capacitive pressure sensor. The pressure sensor is located in the LC tank circuit of the oscillator so that a change in pressure causes a change in capacitance, thus changing the resonant frequency of the sensing system. The chip resistors, wire-wound inductors and MIM capacitors have all been characterized at temperature and operational frequency, and perform with less than 5% variance in electrical performance. The measured capacitive pressure sensing system agrees very well with simulated results. The packaged pressure sensing system is specifically designed to measure the pressure on a jet turbofan engine. The packaged system can be installed by way of borescope plug adaptor fitted to a borescope port exposed to the gas path of a turbofan engine.

Harsh environment↗

NASA NTRS2007

Silicon Carbide Gas Sensors for Propulsion Emissions and Safety Applications

Silicon carbide (SiC) based gas sensors have the ability to meet the needs of a range of aerospace propulsion applications including emissions monitoring, leak detection, and hydrazine monitoring. These applications often require sensitive gas detection in a range of environments. An effective sensing approach to meet the needs of these applications is a Schottky diode based on a SiC semiconductor. The primary advantage of using SiC as a semiconductor is its inherent stability and capability to operate at a wide range of temperatures. The complete SiC Schottky diode gas sensing structure includes both the SiC semiconductor and gas sensitive thin film metal layers; reliable operation of the SiC-based gas sensing structure requires good control of the interface between these gas sensitive layers and the SiC. This paper reports on the development of SiC gas sensors. The focus is on two efforts to better control the SiC gas sensitive Schottky diode interface. First, the use of palladium oxide (PdOx) as a barrier layer between the metal and SiC is discussed. Second, the use of atomically flat SiC to provide an improved SiC semiconductor surface for gas sensor element deposition is explored. The use of SiC gas sensors in a multi-parameter detection system is briefly discussed. It is concluded that SiC gas sensors have potential in a range of propulsion system applications, but tailoring of the sensor for each application is necessary.

Hunter, G. W.↗