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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 73 records · Page 4
All sourcesNASA NTRSDOE OSTI
NASA NTRS1990

Growth of high quality 6H-SiC epitaxial films on vicinal (0001) 6H-SiC wafers

Previously reported growth of SiC films on SiC by chemical vapor deposition (CVD) used alpha-SiC crystal substrates. The CVD growth and evaluation of high quality 6H-SiC films on 6H-SiC wafers cut from large boules grown by the modified-sublimation process is reported. The single-crystal 6H-SiC films were grown on wafers oriented 3 to 4 deg off the (0001) plane toward the 11-20 direction. The films, up to 12 microns thick, had surfaces that were smooth and featureless. The high quality of the films was demonstrated by optical and electron microscopy, and low-temperature photoluminescence.

Powell, J. A.↗
NASA NTRS1996

Effect of Tilt Angle on the Morphology of SiC Epitaxial Films Grown on Vicinal (0001) SiC Substrates

In this study of 4H-SiC and 6H-SiC epitaxial films we found that film morphology was strongly dependent on the tilt angle of the substrate. Large surface steps (up to 25 nm high) due to step bunching were more prevalent at smaller tilt angles. Also, 4H films were more susceptible than 6H to 3C-SiC inclusions during growth. The lateral growth of steps from screw dislocations in low-tilt-angle substrates demonstrated that step bunching on the atomic scale was anisotropic with respect to growth direction for both 4H-SiC and 6H-SiC. A model explaining this behavior is presented. We observed and directly measured the Burgers vector of a 'super' screw dislocation in a 6H-SiC epilayer.

Powell, J. A.↗
NASA NTRS2004

Thermomechanical Performance of C and SiC Multilayer, Fiber-Reinforced, CVI SiC Matrix Composites

Hybrid fiber approaches have been attempted in the past to alloy desirable properties of different fiber-types for mechanical properties, thermal stress management, and oxidation resistance. Such an approach has potential for the CrSiC and SiCrSiC composite systems. SiC matrix composites with different stacking sequences of woven C fiber (T300) layers and woven Sic fiber (Hi-NicalonTM) layers were fabricated using the standard CVI process. Delamination occurred to some extent due to thermal mismatch for all of the composites. However, for the composites with a more uniform stacking sequence, minimal delamination occurred, enabling tensile properties to be determined at room temperature and elevated temperatures (stress-rupture in air). Composites were seal-coated with a CVI SiC layer as well as a proprietary C-B-Si (CBS) layer. Definite improvement in rupture behavior was observed in air for composites with increasing SiC fiber content and a CBS layer. The results will be compared to standard C fiber reinforced CVI SiC matrix and Hi-Nicalon reinforced CVI SiC matrix composites.

Morscher, Gregory N.↗
NASA NTRS2005

Measurements of Breakdown Field and Forward Current Stability in 3C-SiC P-N Junction Diodes Grown on Step-Free 4H-SiC

This paper reports on initial fabrication and electrical characterization of 3C-SiC p-n junction diodes grown on step-free 4H-SiC mesas. Diodes with n-blocking-layer doping ranging from approx. 2 x 10(exp 16)/cu cm to approx.. 5 x 10(exp 17)/cu cm were fabricated and tested. No optimization of junction edge termination or ohmic contacts was employed. Room temperature reverse characteristics of the best devices show excellent low-leakage behavior, below previous 3C-SiC devices produced by other growth techniques, until the onset of a sharp breakdown knee. The resulting estimated breakdown field of 3C-SiC is at least twice the breakdown field of silicon, but is only around half the breakdown field of <0001> 4H-SiC for the doping range studied. Initial high current stressing of 3C diodes at 100 A/sq cm for more than 20 hours resulted in less than 50 mV change in approx. 3 V forward voltage. 3C-SiC, pn junction, p+n diode, rectifier, reverse breakdown, breakdown field,heteroepitaxy, epitaxial growth, electroluminescence, mesa, bipolar diode

Neudeck, Philip G.↗
NASA NTRS2001

Growth of Defect-Free 3C-SiC on 4H- and 6H-SiC Mesas Using Step-Free Surface Heteroepitaxy

A new growth process, herein named step-free surface heteroepitaxy, has achieved 3CSiC films completely free of double positioning boundaries and stacking faults on 4H-SiC and 6H-SiC substrate mesas. The process is based upon the initial 2-dimensional nucleation and lateral expansion of a single island of 3C-SiC on a 4H- or 6H-SiC mesa surface that is completely free of bilayer surface steps. Our experimental results indicate that substrate-epilayer in-plane lattice mismatch (delta a/a = 0.0854% for 3C/4H) is at least partially relieved parallel to the interface in the initial bilayers of the heterofilm, producing an at least partially relaxed 3C-SiC film without dislocations that undesirably thread through the thickness of the epilayer. This result should enable realization of improved 3C-SiC devices.

Neudeck, Philip G.↗
DOE OSTI2016

Characterization of SiC-SiC accident tolerant fuel cladding after stress application

In this work, SiC-SiC tubes with representative LWR (water cooled reactor) cladding dimensions were subjected to cycles of out-of-pile thermal stress followed by quenching. Samples were held at elevated temperatures and dropped into a water bath to replicate the high thermal stresses generated during reflooding. The samples were then characterized to measure changes in strength, permeability, and structure. Results were evaluated both for quenching into room temperature and boiling water. The results show that SiC-SiC composite tubes quenched from 1000 Celsius degrees in air into a boiling water bath exhibited no increase in He leak rate through the cylinder wall up to a pressure difference of 34.5 kPa compared to the as-fabricated state. SiC-SiC composite tubes quenched from 300-400 C. degrees into room temperature water showed an increase in He leak rate compared to the as-fabricated state. We attribute this to the more severe thermal gradient generated through the wall thickness due to higher heat flux characteristic of nucleate boiling compared to film boiling. A persistent vapor film forms around the samples quenched into boiling water, whereas no vapor film forms for the samples quenched into room temperature water. Another important result is that not loss in strength was noted compared to unquenched samples and that the stresses generated by the quenching were not enough to cause fiber fracture.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Modeling thermal and irradiation-induced swelling effects on the integrity of Ti 3 SiC 2 /SiC joints

Previously, results for CVD-SiC joints created using solid state displacement reactions to form a dual-phase SiC/MAX phase irradiated at 800°C and 5 dpa indicated some extent of cracking in the joint and along the CVD-SiC/joint interface. This paper elucidates the origin of cracking by thermomechanical modeling combined with irradiation-induced swelling effects using a continuum damage approach with support of micromechanical modeling. Three irradiation temperatures (400°C, 500°C and 800°C) are considered assuming experimental irradiation doses in a range leading to saturation swelling in SiC. The analyses indicate that a SiC/MAX joint heated to 400°C fails during irradiation-induced swelling at this temperature while it experiences some damage after being heated to 500°C and irradiated at the same temperature. However, it fails during cooling from 500°C to room temperature. The joint experiences minor damage when heated to and irradiated at 800°C but does not fail after cooling. The prediction agrees with the experimental findings available for this case.

damage modeling↗
DOE OSTI2018

Development and Validation of a SiC Based 50 kW Grid-Connected PV Inverter: Preprint

In this digest a 50kW string PV inverter formed using all SiC semiconductor devices is presented. The inverter design includes additively manufactured power block, symmetrical Y-core inductors for ac side filter, and advanced inverter functionality for grid support. This inverter utilizes the conventional three-phase Voltage Source Inverter topology and optimizes the design for SiC based devices. This paper presents the full functional validation of the designed inverter along with quantification of the efficiency and power density. The performance of the inverter for high dc-bus voltage without multi-level topology to exploit SiC advantages is also presented in this digest. The full paper will include details of inverter design, optimization and further experimental validation.

14 SOLAR ENERGY↗
DOE OSTI2015

Study of defect structures in 6H-SiC a/m -plane pseudofiber crystals grown by hot-wall CVD epitaxy

Structural perfection of silicon carbide (SiC) single crystals is essential to achieve high-performance power devices. A new bulk growth process for SiC proposed by researchers at NASA Glenn Research Center, called large tapered crystal (LTC) growth, based on axial fiber growth followed by lateral expansion, could produce SiC boules with potentially as few as one threading screw dislocation per wafer. In this study, the lateral expansion aspect of LTC growth is addressed through analysis of lateral growth of 6H-SiC a/m -plane seed crystals by hot-wall chemical vapor deposition. Preliminary synchrotron white-beam x-ray topography (SWBXT) indicates that the as-grown boules match the polytype structure of the underlying seed and have a faceted hexagonal morphology with a strain-free surface marked by steps. SWBXT Laue diffraction patterns of transverse and axial slices of the boules reveal streaks suggesting the existence of stacking faults/polytypes, and this is confirmed by micro-Raman spectroscopy. Transmission x-ray topography of both transverse and axial slices reveals inhomogeneous strains at the seed–epilayer interface and linear features propagating from the seed along the growth direction. Micro-Raman mapping of an axial slice reveals that the seed contains high stacking disorder, while contrast extinction analysis (g·b and g·b×l) of the linear features reveals that these are mostly edge-type basal plane dislocations. Further high-resolution transmission electron microscopy investigation of the seed–homoepilayer interface also reveals nanobands of different SiC polytypes. A model for their formation mechanism is proposed. Lastly, the implication of these results for improving the LTC growth process is addressed.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2022

Mechanical properties of fusion welded ceramics in the $\mathrm{SiC-ZrB}$ 2 and $\mathrm{SiC-ZrB}$ 2 -$\mathrm{ZrC}$ systems

Mechanical properties of welded SiC-ZrB 2 and SiC-ZrB 2 -ZrC ceramics were measured up to 1700 °C. Commercial powders were hot pressed, machined into coupons, and preheated to 1600 °C before joining the ceramics using either tungsten inert gas welding or plasma arc welding. Toughness of the parent materials was 3–4 MPa*m 1/2 which decreased after welding to 2–2.5 MPa*m 1/2 . Strength of the SiC-ZrB 2 -ZrC parent material was ~700 MPa at 25 °C, ~300 MPa at 1700 °C, and retained 40–60% of this strength once welded. Strength of the SiC-ZrB2 parent material was ~600 MPa at 25 °C and 1700 °C and retained 20–30% of this strength once welded. Griffith analysis indicated that the strength in the parent materials was controlled by the size of SiC clusters while strength of welds was controlled by the size of pores in fusion zones. Therefore, removal of pores in produced fusion zones should be investigated to improve strength of future ceramic welds.

36 MATERIALS SCIENCE↗
DOE OSTI2022

TRISO SiC Failure Probability for Reactivity Initiated Accidents in High-Temperature Gas-Cooled Reactors

This work analyzes the failure process of the silicon carbide (SiC) layer in tristructural isotropic (TRISO) during reactivity-initiated accident scenarios for a high-temperature gas-cooled reactor (HTGR) with BISON. Two cases are considered—a group control rod withdrawal (CRW) and a control rod ejection (CRE)—reproduced from a previous study. Failure probability is modeled using Weibull statistics, and worst-case scenario Weibull parameters are adopted to simulate the envelopes in BISON with a one-dimensional TRISO model. CRW scenario results are characterized by higher values of maximum energy deposition and final temperature and volumetric strain with respect to the CRE ones, but the latter have remarkably higher SiC failure probability, mainly due to the offset in strain rates between the two cases. This work also confirms the validity and conservatism of the performance envelopes produced in a previous work by replicating the envelope formulation using RELAP5-3D and RAVEN with a different sampling technique and obtaining consistent results. A sensitivity analysis using the Sobol variance decomposition method on SiC failure probability is then performed involving a set of inputs on both CRW and CRE. The two most important parameters are Weibull modulus and characteristic stress, and their relative importance depends on the specific case. The proposed interpretation of the results is that both energy deposition and strain rate influence the relative degree of importance of the failure parameters. Computation of 95% confidence intervals around worst-case scenario SiC failure probability values is also carried out for four different sets of Weibull parameters. Heren a new criterion for SiC TRISO quality classification built upon safety-based ranges of Weibull parameters is proposed to be integrated in future Fuel-Production Quality Assurance Plans.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
DOE OSTI2019

Methodology for Irradiation Creep Testing of SiC / SiC Composite Cladding

Irradiation creep compliance is a critical parameter for evaluating the stress evolution of silicon carbide (SiC) components during operation in various reactor concepts. Recent instrumented irradiation creep testing of SiC, performed at low dose in the Halden reactor, showed a creep compliance that is orders of magnitude higher than previous un-instrumented bend relaxation experiments performed in the High Flux Isotope Reactor (HFIR). This discrepancy illustrates the need for additional irradiation creep data for SiC. To this end, a novel irradiation capsule design has been developed to test miniature SiC tensile specimens under loading during irradiation in the HFIR. The experiment design uses the coolant pressure of the HFIR to compress a bellows, which applies the loading on the specimen. Preliminary thermal finite element models were developed to estimate the temperature distribution within the specimen and surrounding capsule components. Similar structural models were developed to evaluate the stress distribution within the specimen. The thermal analyses show that within the gauge section, the specimen temperatures remain within ~10°C of the nominal 300°C design temperature. Similarly, the structural analysis predicts axial stresses within ~10 MPa of the target stress of 100 MPa. These initial analyses show that irradiation creep testing of SiC in the HFIR is feasible and could provide a low-cost, high-throughput vehicle for gathering needed irradiation creep data.

36 MATERIALS SCIENCE↗
DOE OSTI2021

HFIR SiC-SiC Composite Clad Tube Bowing Test: Pre-Irradiation Characterization

This report describes the pre-irradiation characterization of the SiC-SiC composite clad tube bowing experiment that will be irradiated in the High Flux Isotope Reactor (HFIR). There are concerns that SiCSiC fuel cladding in light water reactors could undergo bowing because of the non-uniform fast neutron flux profiles. This experiment is combined with the SiC-SiC channel box experiment, which has similar concerns regarding control blade movements in boiling water reactors. The HFIR experiment aims to validate the predicted deformation and stresses in the composite clad specimen after the exposure of fast neutron flux gradients. Significant radial fast neutron flux gradients that exist in the permanent reflector of HFIR were thoroughly characterized by using detailed 3D neutronic calculations. The 3D displacement damage dose rate profile and the resulting volumetric swelling in SiC were used as inputs to structural analyses to determine the predicted deformation that will affect the specimens. The tube specimens were characterized by using traditional dimensional inspection and surface profilometry to provide detailed information regarding the pre-irradiation condition as the first step to evaluate the radiation-induced deformation. Furthermore, fine engraving markers were inscribed along all outer surfaces of the specimen and mapped by using a digital microscope and a multidimensional stage. This allows marker spacings to be accurately measured and compared with similar measurements that will be made post-irradiation to provide local radiation-induced strain mapping. The experiment successfully completed two HFIR cycle irradiations, cycles 492 and 493, which finished on July 25, 2021.

21 SPECIFIC NUCLEAR REACTORS AND ASSOCIATED PLANTS↗
NASA NTRS1989

Nitriding kinetics of Si-SiC powder mixtures as simulations of reaction bonded Si3N4-SiC composites

The nitriding kinetics of Si and Si plus SiC powder mixtures were studied to simulate the fabrication of RBSN-SiC ceramic matrix composites. Very clean, assynthesized, and solvent-exposed powders were studied; C-rich and Si-rich SiC 0.04-0.05 micron diameter powders were mixed in varying concentrations with SiH4-derived 0.2-0.3 micron diameter Si powder. Complete nitridation is achieved with C-rich SiC powders in 140 min at 1250 C, and in the centers of Si-rich SiC powders in 15 min. The effects on the incubation periods, fast reaction periods, and slow reaction periods that characterize these nitriding processes were studied to explain unusual reverse reaction gradients and other effects of contamination.

Lightfoot, A.↗
NASA NTRS1990

Growth of improved quality 3C-SiC films on 6H-SiC substrates

Previously reported chemical vapor deposition of 3C-SiC on 6H-SiC has resulted in films with a high density of double positioning boundaries (DPBs). It is found that growth on as-grow faces of 6H-SiC crystals can yield films that are largely free of DPBs. The (111) 3C-SiC films, up to 12 microns thick, were evaluated by optical and electron microscopy and low-temperature photoluminescence (LTPL). The LTPL spectra of the films were similar to those of high quality Lely-grown 3C-SiC.

Powell, J. A.↗
DOE OSTI2014

High-Temperature SiC Power Module with Integrated SiC Gate Drivers for Future High-Density Power Electronics Applications

This paper presents the testing results of an all-silicon carbide (SiC) intelligent power module (IPM) for use in future high-density power electronics applications. The IPM has high-temperature capability and contains both SiC power devices and SiC gate driver integrated circuits (ICs). The high-temperature capability of the SiC gate driver ICs allows for them to be packaged into the power module and be located physically close to the power devices. This provides a distinct advantage by reducing the gate driver loop inductance, which promotes high frequency operation, while also reducing the overall volume of the system through higher levels of integration. The power module was tested in a bridgeless-boost converter to showcase the performance of the module in a system level application. The converter was initially operated with a switching frequency of 200 kHz with a peak output power of approximately 5 kW. The efficiency of the converter was then evaluated experimentally and optimized by increasing the overdrive voltage on the SiC gate driver ICs. Overall a peak efficiency of 97.7% was measured at 3.0 kW output. The converter s switching frequency was then increased to 500 kHz to prove the high frequency capability of the power module was then pushed to its limits and operated at a switching frequency of 500 kHz. With no further optimization of components, the converter was able to operate under these conditions and showed a peak efficiency of 95.0% at an output power of 2.1 kW.

Whitaker, Mr. Bret↗
DOE OSTI2024

Evaluation of Additively Manufactured Monolithic SiC and SiC-Matrix Ceramic Matrix Composites for Concentrating Solar Receiver Applications - Fabrication and Testing of Receiver Design Feature Specimens in a Simulating Lab Test via Laser Heating

Increasing operating temperatures of solar receivers is paramount to the efficiency of concentrated solar thermal (CST) and solar power (CSP) systems. Owing to its high temperature stability combined with excellent thermal and optical properties, SiC has been the material of choice for application in high-temperature solar receivers. We report the results of our study of the effective heat transfer characteristics of several candidate SiC structure motifs, or feature geometries, which are fabricated via additive manufacturing. The SiC structure motifs studied include different permutations of three-dimensional periodic lattices and defined shapes. A solar-thermal simulating laboratory test setup is constructed using a 4kW CO2 laser system with beam shaping optics to apply concurrent radiative heating power on one face of 2”-diameter cylindrical feature specimens, representing the structure motifs of interest for receiver element design, while flowing through the sample as heat transfer fluid. Using the test setup, simulative test conditions representative of a concentrated solar flux of up to ~2000 suns could be achieved in the lab tests under varying air flow through the test structure. A simple 1D numerical analysis scheme is developed to extract an effective or compound heat transfer coefficient representative of the test structure under steady-state heat flow conditions. The test results and their use to guide the selection and optimization of SiC material and structure motifs for the receiver element design fabrication are discussed.

14 SOLAR ENERGY↗