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Materials Data on Si3N4 by Materials Project

Si3N4 crystallizes in the trigonal P31c space group. The structure is three-dimensional. there are two inequivalent Si4+ sites. In the first Si4+ site, Si4+ is bonded in a trigonal non-coplanar geometry to three N3- atoms. There is one shorter (1.75 Å) and two longer (1.76 Å) Si–N bond length. In the second Si4+ site, Si4+ is bonded to four N3- atoms to form corner-sharing SiN4 tetrahedra. There is one shorter (1.73 Å) and three longer (1.75 Å) Si–N bond length. There are four inequivalent N3- sites. In the first N3- site, N3- is bonded in a trigonal planar geometry to three Si4+ and two equivalent N3- atoms. There are one shorter (2.57 Å) and one longer (3.15 Å) N–N bond lengths. In the second N3- site, N3- is bonded in a trigonal planar geometry to three equivalent Si4+ atoms. In the third N3- site, N3- is bonded in a trigonal planar geometry to three Si4+ and one N3- atom. The N–N bond length is 2.83 Å. In the fourth N3- site, N3- is bonded in a 3-coordinate geometry to nine N3- atoms.

36 MATERIALS SCIENCE↗

Materials Data on Si3N4 by Materials Project

Si3N4 is Hausmannite-like structured and crystallizes in the orthorhombic Pnma space group. The structure is three-dimensional. there are three inequivalent Si4+ sites. In the first Si4+ site, Si4+ is bonded to four N3- atoms to form a mixture of corner and edge-sharing SiN4 tetrahedra. The corner-sharing octahedra tilt angles range from 62–66°. There are a spread of Si–N bond distances ranging from 1.71–1.77 Å. In the second Si4+ site, Si4+ is bonded to six N3- atoms to form SiN6 octahedra that share corners with eight SiN6 octahedra, corners with four equivalent SiN4 tetrahedra, edges with two equivalent SiN6 octahedra, and an edgeedge with one SiN4 tetrahedra. The corner-sharing octahedra tilt angles range from 49–54°. There are a spread of Si–N bond distances ranging from 1.87–2.12 Å. In the third Si4+ site, Si4+ is bonded to six N3- atoms to form SiN6 octahedra that share corners with four equivalent SiN6 octahedra, corners with two equivalent SiN4 tetrahedra, edges with four SiN6 octahedra, and edges with two equivalent SiN4 tetrahedra. The corner-sharing octahedra tilt angles range from 50–54°. There are a spread of Si–N bond distances ranging from 1.85–1.95 Å. There are three inequivalent N3- sites. In the first N3- site, N3- is bonded to four Si4+ atoms to form corner-sharing NSi4 tetrahedra. In the second N3- site, N3- is bonded in a rectangular see-saw-like geometry to four Si4+ atoms. In the third N3- site, N3- is bonded in a rectangular see-saw-like geometry to four Si4+ atoms.

36 MATERIALS SCIENCE↗

Materials Data on Si3N4 by Materials Project

Si3N4 crystallizes in the hexagonal P6_3/m space group. The structure is three-dimensional. Si4+ is bonded to four N3- atoms to form corner-sharing SiN4 tetrahedra. There is one shorter (1.74 Å) and three longer (1.75 Å) Si–N bond length. There are two inequivalent N3- sites. In the first N3- site, N3- is bonded in a trigonal planar geometry to three equivalent Si4+ atoms. In the second N3- site, N3- is bonded in a trigonal planar geometry to three equivalent Si4+ atoms.

36 MATERIALS SCIENCE↗

Mechanical behavior of polycrystalline ceramics: Brittle fracture of SiC-Si3N4 materials

Research on the fracture behavior of silicon nitride and silicon carbide is reported along with the role of anion impurities in the fabrication and behavior of magnesium oxide. The results of a survey of crack propagation in SiC and Si3N4 are presented. Studies in the following areas are reported: development of a fracture toughness testing technique, constant moment beam, microcrack examination, and etching techniques.

Ceipold, M. H.↗

Microstructure of hot-pressed Al2O3-Si3N4 mixtures as a function of holding temperature

Powder mixtures of 40 m/o Si3N4-60 m/o Al2O3 were hot-pressed at 4000 psi at various holding temperatures from 1100 C to 1700 C. Scanning Electron Microscopy and Transmission Electro Microscopy results were correlated to X-ray phase analysis and density measurements. The progressively developed microstructure was used to interpret the densification behavior of SiAlON. Photomicrographs of microstructures are shown.

Yeh, H. C.↗

Pressure sintering of Si3N4-Al2O3 /Sialon/

Essentially pore-free Sialon bodies were obtained by pressure sintering for three blends (mol ratios of 4:1, 2:3, and 3:2) of Si3N4 and Al2O3 powders under the conditions of 27.6 MN/sq m and a temperature of 1700 C for 2 h. These dense bodies consist mainly of a Sialon solid solution with a minor amount of a particular second phase. The higher the Al2O3 content (20 to 60 mol% range) in Sialon, the higher the densification rate. Fully dense bodies can be obtained at temperatures as low as 1500 C at 27.6 MN/sq m for 2 h with no second phase detectable by X-ray diffraction. A 100% dense body can be obtained by heating at 1700 C at 27.6 MN/sq m without a holding time.

Yeh, H. C.↗

Microstructure of hot-pressed Al2O3-Si3N4 mixtures as a function of holding temperature

Powder mixtures of 40 m/o Si3N4-60 m/o Al2O3 were hot-pressed at 4000 psi at various holding temperatures from 1100 C to 1700 C. Scanning and transmission electron microscopy results were correlated to X-ray phase analysis and density measurements. The progressively developed microstructure was used to interpret the densification behavior of SiAlON.

Yeh, H. C.↗

Effect of CeO2, MgO and Y2O3 additions on the sinterability of a milled Si3N4 with 14.5 wt% SiO2

The sinterability of alpha Si3N4 with 0-5.07 equivalent per cent of CeO2, MgO, or Y2O3 has been studied in the temperature range 1650-1820 C by density measurements and X-ray diffraction analysis. Maximum densities were obtained in the range 1765-1820 C and were 99.6% of theoretical with 2.5% CeO2; 98.5% of theoretical with 1.24 to 1.87% MgO, and 99.2% of theoretical with 2.5% Y2O3. Densities 94% or more of theoretical value were obtained with as little as 0.62 equivalent per cent additive.

Arias, A.↗

Sintered reaction bonded Si3N4 for the AGT 101 turbine rotor

The sintered reaction reaction bonded Si3N4 (SRBSN) process, with Y2O3 as a sintering aid, was selected for the fabrication of the AGT 101 turbine rotor. Experiments to determine the optimum Y2O3 composition of this system are discussed. The room temperature strength of the optimum material (RM-1) exceeds 700 MPa while the 1200 C strength exceeds 550 MPa. The slip casting fabrication technique employed for the AGT 101 simulated rotor is described. Rotors have been cast, nitrided and sintered. Densities exceeding 97% of theoretical (3.26 g/cc) have been obtained. Problems relating to sintering reproducibility, and the overall quality of the simulated rotors have been identified.

Mangels, J. A.↗

Effects of oxidation and oxidation under load on strength distributions of Si3N4

The room-temperature strength distributions of a sintered and a hot-pressed Si3N4 were examined in the as-machined condition, after oxidation at 1370 C and after oxidation under load at 1370 C. The strength-controlling flaw populations were highly transient in nature. Both the duration of oxidation and the magnitude of the applied load were observed to effect changes in strength. This dynamic situation is related to both strengthening and weakening processes, which at times may occur simultaneously in the same strength distribution.

Easler, T. E.↗

Effect of Y2O3 and Al2O3 on the oxidation resistance of Si3N4

Oxidation of cold-pressed and sintered Si3N4 containing 15 wt% Y2O3 and 2, 4, 6, and 8% Al2O3 is observed at temperatures as low as 1000 C with IR reflection spectroscopy. Concentrations of Al2O3 in excess of 4% greatly retard the rate of oxidation and alter the mechanism of surface attack by promoting formation of a glassy layer on the surface containing mixed oxynitride bonds. The glassy layer retards heterogeneous attack and reduces the effect of an oxidation transition temperature between 1000 and 1100 C for these materials.

Hench, L. L.↗

Strength and fracture toughness of reaction-bonded Si3N4

Fracture strength and fracture toughness measurements were made on reaction-bonded Si3N4 materials with a range of alpha/beta ratios. The results do not indicate any clear relation between the modulus of rupture and the alpha/beta ratio over the range 1.5-9. Values for the modulus of rupture range from 219 to 290 MN per sq m, with an overall average of 238 MN per sq m. The notched beam fracture toughness is found to be constant over the range of microstructures produced, indicating that of the various microstructural features (e.g., alpha/beta ratio and pore size and distribution) no single element has a controlling influence over fracture toughness and the fracture surface energy.

Danforth, S. C.↗

Sintering, properties and fabrication of Si3N4 + Y2O3 based ceramics

Pure silicon nitride shows a remarkable resistance to sintering without the use of densification additives. The present investigation is concerned with results which show the effect of chemical content on sinterability, taking into account the composition, raw material impurities, and processing contaminants. Aspects of sintering are discussed along with strength characteristics, and oxidation relations. Attention is given to phase field I and II materials, phase field III and IV materials, tungsten carbide and oxidation at 600 C, and studies involving shape fabrication by injection molding. It was found that in sintering Si3N4 + Y2O3 an increase in the amount of Y2O3 and, in particular, the addition of Al2O3 enhances the fluidity of the liquid phase.

Quackenbush, C. L.↗

Consolidation of Si3N4 without additives (by hot isostatic pressing)

The potential of using hot isostatic pressing (HIP'ing) technique to produce dense silicon nitride materials without or with a reduced amount of additives (much less than 5 w/o) was investigated. Hot isostatic pressing technique can provide higher pressure and temperature than hot pressing can, thus has the potential of requiring less densification aids to consolidate Si3N4 materials. It was anticipated that if such dense materials could be fabricated, the high temperature strength of the material should be improved significantly. Observations on the phase transformation, densification behavior, and microstructures of the samples are also documented. Density, microhardness, four point bend strength (room temperature and 1370 C) were measured on selected densified materials.

Yeh, H. C.↗

Compositional effects on Si3N4 fracture surfaces

Surface analysis techniques (X-ray, infrared reflection spectroscopy, Auger electron spectroscopy) applied to the same samples reveal that fracture surfaces of Si3N4 with Y2O3 densification aids possess a higher concentration of oxygen than the bulk. The oxide densification aids thus concentrate in the grain boundaries, and even low-temperature fracture is seen as occurring preferentially within the oxygen-enriched grain boundaries. It is found that increasing the concentrations of Y2O3 and Al2O3 increases the oxygen content of the fracture surface. A range of 13-15 percent Y2O3 + 6 percent Al2O3 gives an amorphous grain-boundary phase that is resistant to devitrification. Fracture occurs through the amorphous phase, and heat treatment at 1000 C has little effect on the amorphous phase.

Hench, L. L.↗

Fractured toughness of Si3N4 measured with short bar chevron-notched specimens

The short bar chevron-notched specimen is used to measure the plane strain fracture toughness of hot pressed Si3N4. Specimen proportions and chevron-notch angle are varied, thereby varying the amount of crack extension to maximum load (upon which K sub IC is based). The measured toughness (4.68 + or - 0.19 MNm to the 3/2 power) is independent of these variations, inferring that the material has a flat crack growth resistance curve.

Salem, J. A.↗

Relation between microstructural heterogeneous surface layer and nitrogen pressure during sintering in Si3N4-Ml2O3 ceramics

The effects of N2 pressure (0.1 to 50 MPa) during sintering on the thickness of the microstructurally heterogeneous layer (MHL) formed near the surface of the compact, transverse-rupture strength, were investigated for Si3N4-(10 to 20) mol % MgO-5.5 mol % Al2O3 ceramics. The sintering temperature and time were 1973 K and 3.6 ks, respectively. The N2 gas was introduced into the furnace at about 1273 K. When the compacts were sintered under a certain N2 pressure, for example, about 20 and 7 MPa for 10 and 15 mol% MgO, respectively, the evolutions of N and Si were suppressed. The thickness of the MHL became very small and at the same time the strength of the surface layer of the compact (which was normally less than that of the inside in the case of 0.1 MPa) became nearly the same value as that of the inside. At higher pressure, the strength of both surface layer and the inside decreased considerably. Some discussion was made on these results.

Hayashi, K.↗

Fracture toughness of Si3N4 measured with short bar chevron-notched specimens

The short bar chevron-notched specimen is used to measure the plane strain fracture toughness of hot pressed Si3N4. Specimen proportions and chevron-notch angle are varied, thereby varying the amount of crack extension to maximum load (upon which K sub IC is based). The measured toughness (4.68 + or 0.19 MNm to the 3/2 power) is independent of these variations, inferring that the material has a flat crack growth resistance curve.

Salem, Jonathan A.↗