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At least 73 records · Page 4
All sourcesNASA NTRSDOE OSTI
DOE OSTI2026

Optimization of Annealing for WZ-Phase Removal and Densification in Sb-Doped CdSexTe1-x Solar Cells

The impact of high temperature annealing (HTA) treatments on the performance of Sb-doped CdSeTe solar cells containing a CdSe0.25Te0.75/CdTe front stack and a vapor transport (VT) deposited CdTe:Sb absorber was studied. The HTA treatment of the thermally evaporated CdSe0.25Te0.75/CdTe front stack converts the mixed-phase film into a single zinc blende structure through recrystallization of the photo-inactive wurtzite phase. Subsequently, HTA treatment of the full device stack after vapor transport deposition of CdTe:Sb absorber promotes Se-Te intermixing, reduces voids, densifies the full stack and enhances CdTe:Sb grain growth. Comprehensive characterizations revealed that the combined HTA treatments significantly improved film crystallinity, removed the WZ phase in the front stack, enhanced full-stack densification, reduced defect densities, and enhanced carrier dynamics. With HTA treatments, the open-circuit voltage (VOC) of CdSeTe:Sb devices increased from ~ 400 mV to >= 600 mV, and when combined with optimized CdCl2 treatment, VOC reached 849 mV. The net carrier concentrations (NA-ND) of representative devices were NA-ND = 1.5 x 10^15, 1.1 x 10^15, and 3.5 x 10^14 cm-3 for the no-HTA, moderate-HTA, and optimized high-VOC conditions, respectively. Since the highest VOC corresponds to the lowest apparent NA-ND, , which is similar to a Cu-doped-only CdSeTe solar cell (NA-ND ~= 2 x 10^14 cm-3), the data indicate that improved device performance does not result from increased electrically active Sb; instead, it points to structural improvement as the dominant effect of HTA. The findings demonstrate the potential of HTA treatments to improve the structural and electrical properties of CdSeXTe1-X solar cells.

14 SOLAR ENERGY↗
DOE OSTI2023

Tuning the Radius Ratio to Enhance Thermoelectric Properties in the Zintl Compounds AM 2 Sb 2 (A = Ba, Sr; M = Zn, Cd)

Five novel Zintl phase solid solutions in the Ba 1–x Sr x Zn 2–y Cd y Sb 2 (0 ≤ x ≤ 0.13(1); 0 ≤ y ≤ 0.32(2)) system were successfully synthesized by the molten Pb metal-flux method, and the powder X-ray diffraction and single-crystal X-ray diffraction analyses proved that all five title compounds adopted the BaCu 2 S 2 -type phase having the orthorhombic Pnma space group (Z = 4, Pearson code oP20) with five crystallographically independent atomic sites. The previously studied BaCu 2 S 2 -type antimonides demonstrated a limited tolerance for doping in contrast to the CaAl 2 Si 2 -type antimonides. To understand the relatively narrower phase width and limited dopability of the title BaCu 2 S 2 -type phase than the CaAl 2 Si 2 -type phase in the overall Ba 1–x Sr x Zn 2–y Cd y Sb 2 system, the radius ratio of cations and anionic elements r + /r – for two structure types were thoroughly investigated. For the first time, the r + /r – ratio was identified as a critical factor for the phase selectivity: (1) r + /r – > 1 favored the BaCu 2 S 2 -type phase, and (2) r + /r – < 1 favored the CaAl 2 Si 2 -type phase. Further, we also revealed the structural transformation mechanism from the more widely observed CaAl 2 Si 2 -type phase to the title BaCu 2 S 2 -type phase as the relatively larger cationic elements were introduced to the system. A series of DFT calculations using the three hypothetical models indicated that a resonance peak near EF in the density of states curves was descended from the relatively flat band structure at several special symmetry points rationalizing the enhanced Seebeck coefficients of Ba 0.94(1) Sr 0.06 Zn 1.86(3) Cd 0.14 Sb 2 and Ba 0.96(1) Sr 0.04 Zn 1.68(2) Cd 0.32 Sb 2 . Electron localization function analysis rationalized the correlation between the polarity change of anionic Zn/Cd–Sb bonds and the charge carrier mobility on the anionic frameworks. Temperature-dependent thermoelectric properties were studied for the four title compounds, and the results proved that the Sr and Cd doping in the title Ba 1–x Sr x Zn 2–y Cd y Sb 2 system successfully enhanced the ZT values through the increased Seebeck coefficients and the reduced total thermal conductivities.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Direct Observation of 2DEG States in Shallow Si:Sb δ-Layers

We investigate the electronic structure of high-density layers of Sb dopants in a silicon host, so-called Si:Sb δ-layers. We show that, in spite of the known challenges in producing highly confined Sb δ-layers, sufficient confinement is created such that the lowest conduction band states (Γ states, studied in depth in other silicon δ-layers), become occupied and can be observed using angle-resolved photoemission spectroscopy. The electronic structure of the Si:Sb δ-layers closely resembles that of Si:P systems, where the observed conduction band is near-parabolic and slightly anisotropic in the k ∥ plane. The observed Γ state extends ∼1 nm in the out-of-plane direction, which is slightly wider than the 1/3 monolayer thick dopant distribution. This is caused by a small segregation of the dopant layer, which is nevertheless minimal when comparing with earlier published attempts. Our results serve to demonstrate that Sb is still a feasible dopant alternative for use in the semiconductor δ-layer platform, providing similar electronic functionality to Si:P systems. Additionally, it has the advantages of being less expensive, more controllable, safer to handle, and more compatible with industrial patterning techniques. Si:Sb is therefore a viable platform for emerging quantum device applications.

Deposition↗
DOE OSTI2021

Prediction of Bi 2 Te 3 -Sb 2 Te 3 Interfacial Conductance and Superlattice Thermal Conductivity Using Molecular Dynamics Simulations

Bismuth telluride (Bi 2 Te 3 ) and its alloys with antimony telluride (Sb 2 Te 3 ) have long been considered to be the best room-temperature bulk thermoelectric (TE) materials. In recent decades, proof-of-concept demonstrations on Bi 2 Te 3 -Sb 2 Te 3 nanostructures have shown high TE performance due to reduction in lattice thermal conductivities. Particularly, ultra-low thermal conductivities have been observed in Bi 2 Te 3 -Sb 2 Te 3 1D superlattices, leading to thermoelectric figures of merit (ZT) as high as 2.4. In contrast, very few computational studies have been performed to provide insight into the phonon transport across these nanostructures. In this work, we use non-equilibrium molecular dynamics simulations with previously developed force fields to simulate thermal transport across Bi 2 Te 3 -Sb 2 Te 3 interfaces and superlattices. We first calculate the thermal conductance associated with a Bi 2 Te 3 -Sb 2 Te 3 interface across a temperature range of 200–400 K. Furthermore, the values are also compared with thermal conductances calculated by a modified Landauer transport formalism using phonon transmission coefficients obtained from the diffuse mismatch model. Our results show that inelastic scattering processes contribute to an increase in interfacial thermal conductance at higher temperatures. Finally, we calculate the thermal conductivities of Bi 2 Te 3 -Sb 2 Te 3 superlattices with varying period lengths from 2 to 18 nm. A minimum thermal conductivity of 0.27 W/mK is observed at a period length of 4 nm, which is attributed to the competition between incoherent and coherent phonon transport regimes. In comparison with previous experimental measurements in the literature, our results show good agreement with respect to the range of thermal conductivity values and the period length corresponding to the minimum superlattice thermal conductivity.

42 ENGINEERING↗
DOE OSTI2023

Testing electron–phonon coupling for the superconductivity in kagome metal CsV 3 Sb 5

In crystalline materials, electron-phonon coupling (EPC) is a ubiquitous many-body interaction that drives conventional Bardeen-Cooper-Schrieffer superconductivity. Recently, in a new kagome metal CsV 3 Sb 5 , superconductivity that possibly intertwines with time-reversal and spatial symmetry-breaking orders is observed. Density functional theory calculations predicted weak EPC strength, λ, supporting an unconventional pairing mechanism in CsV 3 Sb 5 . However, experimental determination of λ is still missing, hindering a microscopic understanding of the intertwined ground state of CsV 3 Sb 5 . Here, using 7-eV laser-based angle-resolved photoemission spectroscopy and Eliashberg function analysis, we determine an intermediate λ=0.45–0.6 at T = 6 K for both Sb 5p and V 3d electronic bands, which can support a conventional superconducting transition temperature on the same magnitude of experimental value in CsV3Sb5. Remarkably, the EPC on the V 3d-band enhances to λ~0.75 as the superconducting transition temperature elevated to 4.4 K in Cs(V 0.93 Nb 0.07 ) 3 Sb 5 . Our results provide an important clue to understand the pairing mechanism in the kagome superconductor CsV 3 Sb 5 .

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Materials Data on Sb by Materials Project

Sb is alpha Po structured and crystallizes in the cubic Pm-3m space group. The structure is three-dimensional. Sb is bonded to six equivalent Sb atoms to form a mixture of edge and corner-sharing SbSb6 octahedra. The corner-sharing octahedral tilt angles are 0°. All Sb–Sb bond lengths are 3.10 Å.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Materials Data on Sb by Materials Project

Sb crystallizes in the tetragonal I4/mcm space group. The structure is three-dimensional. Sb is bonded in a 6-coordinate geometry to six equivalent Sb atoms. There are two shorter (3.08 Å) and four longer (3.19 Å) Sb–Sb bond lengths.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Materials Data on Sb by Materials Project

Sb is beta Polonium-like structured and crystallizes in the triclinic P-1 space group. The structure is three-dimensional. Sb is bonded to six equivalent Sb atoms to form a mixture of edge and corner-sharing SbSb6 octahedra. The corner-sharing octahedra tilt angles range from 0–11°. There are a spread of Sb–Sb bond distances ranging from 3.00–3.22 Å.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Materials Data on Sb by Materials Project

Sb is Tungsten structured and crystallizes in the trigonal R-3m space group. The structure is three-dimensional. Sb is bonded in a body-centered cubic geometry to eight equivalent Sb atoms. There are six shorter (3.27 Å) and two longer (3.30 Å) Sb–Sb bond lengths.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Materials Data on Sb by Materials Project

Sb is Magnesium structured and crystallizes in the hexagonal P6_3/mmc space group. The structure is three-dimensional. Sb is bonded to twelve equivalent Sb atoms to form a mixture of face, edge, and corner-sharing SbSb12 cuboctahedra. There are six shorter (3.37 Å) and six longer (3.39 Å) Sb–Sb bond lengths.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Materials Data on Sb by Materials Project

Sb is alpha Po structured and crystallizes in the triclinic P-1 space group. The structure is three-dimensional. Sb is bonded to six equivalent Sb atoms to form a mixture of edge and corner-sharing SbSb6 octahedra. The corner-sharing octahedra tilt angles range from 0–3°. There are a spread of Sb–Sb bond distances ranging from 3.04–3.16 Å.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Acceleration of Crystallization Kinetics in Ge‐Sb‐Te‐Based Phase‐Change Materials by Substitution of Ge by Sn

Abstract Thin films of (Ge 1– x Sn x ) 8 Sb 2 Te 11 are prepared to study the impact of Sn‐substitution on properties relevant for application in phase‐change memory, a next‐generation electronic data storage technology. It is expected that substitution decreases the crystallization temperature, but it is not known how the maximum crystallization rate is affected. Ge 8 Sb 2 Te 11 is chosen from the (GeTe) y (Sb 2 Te 3 ) 1– y system of phase‐change materials as a starting point due to its higher crystallization temperature as compared to the common material Ge 2 Sb 2 Te 5 . In situ X‐ray diffraction at 5 K min −1 heating rate is performed to determine the crystallization temperature and the resulting structure. To measure the maximum crystallization rate, femtosecond optical pulses that heat the material repetitively and monitor the resulting increase of optical reflectance are used. Glasses over the entire composition range are prepared using a melt‐quenching process. While at x = 0, 97, subsequent pulses are required for crystallization, one single pulse is enough to achieve the same effect at x = 0.5. The samples are further characterized by optical ellipsometry and calorimetry. The combined electrical and optical contrast and the ability to cycle between states with single femtosecond pulses renders Ge 4 Sn 4 Sb 2 Te 11 promising for photonics applications.

Zalden, Peter↗
DOE OSTI2021

Au and Pt Diffusion in Electrodeposited Amorphous Sb 2 Te 3 Thin Films

Amorphous Sb 2 Te 3 thin films are synthesized using electrodeposition in different thicknesses to explore their solid electrolytic nature with respect to some noble metals. Au and Pt are used as the substrate materials and thermally diffused into the Sb 2 Te 3 films under passivated and nonpassivated conditions. Rutherford backscattering spectrometry is used to study the Au and Pt diffusion into the films as a function of depth. It is found that Au diffuses into the Sb 2 Te 3 thin films even at room temperature. In contrast, there is no observable diffusion of Pt at room temperature. At a higher temperature (i.e., 200 °C), both Au and Pt diffuse into the Sb 2 Te 3 thin films and Au diffusion is more significant than Pt. Overall, the findings suggest that amorphous Sb 2 Te 3 can be used as a good solid electrolyte to permit the diffusion of some noble metals such as Au and Pt.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Surface and interface structures of epitaxial Sb 2 Se 3 on mica

Sb 2 Se 3 thin film is an emerging photon absorber used in solar cells. We report the study of surface and interface structures of Sb2Se3(1 2 0) film grown on mica substrate by a high-rate vapor transport method. The interface epitaxial relationship between Sb 2 Se 3 and mica examined by the cross- sectional TEM images and diffraction patterns along the [0 0 1] and [10] directions of Sb 2 Se 3 reveal a rectangular structure with lengths of 4.03 ± 0.1 Å and 5.29 ± 0.1 Å, consistent with the [1 2 0] out-of-plane direction of Sb 2 Se 3 bulk lattice parameters. In contrast, the two-dimensional reciprocal space map (2D map) constructed from azimuthal reflection high-energy electron diffraction (ARHEED) patterns from the surface exhibits a decorated hexagonal structure. This surface structure emerges from six epitaxial orientation domains/rods and each domain has a rectangular unit mesh of 3.94 ± 0.09 Å and 26.95 ± 1.16 Å along the [0 0 1] and [10] directions. The 26.95 Å is consistent with the unit mesh of the outermost layer of the Sb 2 Se 3 (1 2 0) domains/rods. Overall, our 2D map reveals surface information that are not easily observed by other diffraction techniques.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2021

Electronic, structural and magnetic properties of Mn (1+x) Pt (1-x) Sb

Electronic and magnetic properties of half-metallic Heusler alloys can be modified by tuning their chemical compositions. We have carried out a combined theoretical and experimental investigation of Mn (1+x) Pt (1-x) Sb (0 ≤ x ≤ 0.5) alloys. Our first-principles calculations indicate that the stoichiometric MnPtSb exhibits nearly half-metallic band structure, but a robust half-metallicity can be achieved in Mn-rich compositions Mn (1+x) Pt (1-x) Sb (0 ≤ x ≤ 0.5) with x = 0.25 and higher in their cubic structures. In addition, while MnPtSb exhibits ferromagnetic alignment, Mn (1+x) Pt (1-x) Sb are ferrimagnetic for all non-zero values of x. We have also synthesized cubic MnPtSb and Mn 1.25 Pt 0.75 Sb alloys using arc melting and annealing. The magnetic properties of these alloys are consistent with our theoretical predictions. Furthermore, these results indicate that the Mn-rich Mn (1+x) Pt (1-x) Sb alloys have potential for spin-transport-based devices.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Structural and electronic characteristics of amorphous Ge 8 Sb 2 Te 11

GeTe-rich phase-change materials can be utilized in rewriteable optical memory due to the large contrast in reflectivity between amorphous and crystalline phases. Here we explored the structure and electronic properties of amorphous Ge 8 Sb 2 Te 11 using ab initio molecular dynamics simulations. The results indicate that amorphous Ge 8 Sb 2 Te 11 is dominantly composed of Ge-, Sb- and Te-centered octahedrons with distortions, while 30.4 % of Ge-centered clusters are in the form of tetrahedrons which are randomly distributed. The 5-fold rings possess a large proportion, and the Gesingle bondTe and Sbsingle bondTe bonds present larger formation energies than other bonds, leading to the ABAB bonding sequence (A: Ge and Sb, B: Te). The lone pair electrons locating at the opposite direction of bonds possess a large fraction of 14.8 %, which may enhance the distortions of local clusters. Importantly, these structural properties lead to the high stability of amorphous Ge 8 Sb 2 Te 11 and thus long data retention in the information storage.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Single crystal growth and characterization of new Zintl phase Ca 9 Zn 3.1 In 0.9 Sb 9

Complex Zintl phases have yielded a large variety of promising new thermoelectric materials. Here we report the discovery of the new Zintl phase Ca 9 (Zn 1– x In x ) 4 Sb 9 ( x ~ 0.9), needle-like crystals of which were serendipitously obtained from an In- and Sb-rich flux. Although its composition is reminiscent of Ca 9 Zn 4+ x Sb 9 , an excellent thermoelectric material with zT > 1, the substitution of In on the Zn site leads to the formation of an entirely new structure type. Single crystal X-ray diffraction revealed a structure characterized by T Sb 4 tetrahedra ( T = statistically disordered Zn and In atoms) and ZnSb 3 triangular units, which share common corners to form [ T 4 Sb 9 ] 18– polyanions. The average structure was found to have hexagonal symmetry. The valence electron count in this heavily-disordered structure appears to follows the Zintl-Klemm rules, suggesting semiconducting behavior. Single crystal electrical conductivity and Seebeck coefficient measurements support this conclusion, suggesting that the as-grown crystals are degenerate p -type semiconductors.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2020

Severe Dirac Mass Gap Suppression in Sb 2 Te 3 -Based Quantum Anomalous Hall Materials

The quantum anomalous Hall (QAH) effect appears in ferromagnetic topological insulators (FMTIs) when a Dirac mass gap opens in the spectrum of the topological surface states (SSs). Unaccountably, although the mean mass gap can exceed 28 meV (or ~320 K), the QAH effect is frequently only detectable at temperatures below 1 K. Using atomic-resolution Landau level spectroscopic imaging, we compare the electronic structure of the archetypal FMTI Cr 0.08 (Bi 0.1 Sb 0.9 ) 1.92 Te 3 to that of its nonmagnetic parent (Bi 0.1 Sb 0.9 ) 2 Te 3 , to explore the cause. In (Bi 0.1 Sb 0.9 ) 2 Te 3 , we find spatially random variations of the Dirac energy. Statistically equivalent Dirac energy variations are detected in Cr 0.08 (Bi 0.1 Sb 0.9 ) 1.92 Te 3 with concurrent but uncorrelated Dirac mass gap disorder. Additionally, these two classes of SS electronic disorder conspire to drastically suppress the minimum mass gap to below 100 μeV for nanoscale regions separated by <1 μm. This fundamentally limits the fully quantized anomalous Hall effect in Sb 2 Te 3 -based FMTI materials to very low temperatures.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗